JP2017103389A - 静電チャック及び半導体製造装置 - Google Patents

静電チャック及び半導体製造装置 Download PDF

Info

Publication number
JP2017103389A
JP2017103389A JP2015236642A JP2015236642A JP2017103389A JP 2017103389 A JP2017103389 A JP 2017103389A JP 2015236642 A JP2015236642 A JP 2015236642A JP 2015236642 A JP2015236642 A JP 2015236642A JP 2017103389 A JP2017103389 A JP 2017103389A
Authority
JP
Japan
Prior art keywords
electrostatic chuck
substrate
electrostatic
substrate body
mounting table
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2015236642A
Other languages
English (en)
Japanese (ja)
Other versions
JP2017103389A5 (enExample
Inventor
昌邦 宮澤
Masakuni Miyazawa
昌邦 宮澤
宮本　和佳
Kazuyoshi Miyamoto
和佳 宮本
清水　和紀
Kazunori Shimizu
和紀 清水
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shinko Electric Industries Co Ltd
Original Assignee
Shinko Electric Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinko Electric Industries Co Ltd filed Critical Shinko Electric Industries Co Ltd
Priority to JP2015236642A priority Critical patent/JP2017103389A/ja
Priority to US15/347,842 priority patent/US20170162416A1/en
Publication of JP2017103389A publication Critical patent/JP2017103389A/ja
Publication of JP2017103389A5 publication Critical patent/JP2017103389A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2015236642A 2015-12-03 2015-12-03 静電チャック及び半導体製造装置 Pending JP2017103389A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2015236642A JP2017103389A (ja) 2015-12-03 2015-12-03 静電チャック及び半導体製造装置
US15/347,842 US20170162416A1 (en) 2015-12-03 2016-11-10 Electrostatic chuck and semiconductor manufacturing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015236642A JP2017103389A (ja) 2015-12-03 2015-12-03 静電チャック及び半導体製造装置

Publications (2)

Publication Number Publication Date
JP2017103389A true JP2017103389A (ja) 2017-06-08
JP2017103389A5 JP2017103389A5 (enExample) 2018-10-25

Family

ID=58800353

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015236642A Pending JP2017103389A (ja) 2015-12-03 2015-12-03 静電チャック及び半導体製造装置

Country Status (2)

Country Link
US (1) US20170162416A1 (enExample)
JP (1) JP2017103389A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113248288A (zh) * 2020-02-07 2021-08-13 新光电气工业株式会社 陶瓷基板、静电吸盘以及静电吸盘的制造方法
KR20230096465A (ko) 2021-12-23 2023-06-30 주식회사 미코세라믹스 세라믹 서셉터의 제조 방법

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7239307B2 (ja) * 2018-12-04 2023-03-14 株式会社アイシン福井 レーザ溶接装置
JP7168430B2 (ja) * 2018-12-04 2022-11-09 株式会社アイシン福井 レーザ溶接装置
WO2025041254A1 (ja) * 2023-08-22 2025-02-27 日本碍子株式会社 半導体製造装置用部材

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014220408A (ja) * 2013-05-09 2014-11-20 新光電気工業株式会社 静電チャック及び半導体製造装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014220408A (ja) * 2013-05-09 2014-11-20 新光電気工業株式会社 静電チャック及び半導体製造装置

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113248288A (zh) * 2020-02-07 2021-08-13 新光电气工业株式会社 陶瓷基板、静电吸盘以及静电吸盘的制造方法
KR20210101149A (ko) * 2020-02-07 2021-08-18 신꼬오덴기 고교 가부시키가이샤 세라믹 기판, 정전 척, 및 정전 척의 제조 방법
JP2021125639A (ja) * 2020-02-07 2021-08-30 新光電気工業株式会社 セラミックス基板、静電チャック、静電チャックの製造方法
JP2023080153A (ja) * 2020-02-07 2023-06-08 新光電気工業株式会社 セラミックス基板、静電チャック
JP7312712B2 (ja) 2020-02-07 2023-07-21 新光電気工業株式会社 セラミックス基板、静電チャック、静電チャックの製造方法
CN113248288B (zh) * 2020-02-07 2024-05-17 新光电气工业株式会社 陶瓷基板、静电吸盘以及静电吸盘的制造方法
JP7547540B2 (ja) 2020-02-07 2024-09-09 新光電気工業株式会社 セラミックス基板、静電チャック
US12157702B2 (en) 2020-02-07 2024-12-03 Shinko Electric Industries Co., Ltd. Ceramic substrate and electrostatic chuck
TWI888480B (zh) * 2020-02-07 2025-07-01 日商新光電氣工業股份有限公司 陶瓷基板、靜電夾頭及靜電夾頭之製造方法
KR102846344B1 (ko) * 2020-02-07 2025-08-18 신꼬오덴기 고교 가부시키가이샤 세라믹 기판, 정전 척, 및 정전 척의 제조 방법
KR20230096465A (ko) 2021-12-23 2023-06-30 주식회사 미코세라믹스 세라믹 서셉터의 제조 방법

Also Published As

Publication number Publication date
US20170162416A1 (en) 2017-06-08

Similar Documents

Publication Publication Date Title
JP7341216B2 (ja) 載置台
JP7632980B2 (ja) 載置台及びプラズマ処理装置
KR102035584B1 (ko) 정전 척 및 반도체 제조 장치
JP6283532B2 (ja) 静電チャックの製造方法
JP2017103389A (ja) 静電チャック及び半導体製造装置
JP7449768B2 (ja) セラミックス基板及びその製造方法、静電チャック、基板固定装置、半導体装置用パッケージ
JP2007317772A (ja) 静電チャック装置
JP2013016554A (ja) 静電チャック、真空処理装置
TWI421975B (zh) 電漿處理裝置用基板載置台、電漿處理裝置及絕緣皮膜之成膜方法
TWI876126B (zh) 具有差異化的陶瓷的靜電卡盤
TW201543532A (zh) 用於基板之電漿處理之方法及裝置
JP3964803B2 (ja) プラズマ処理装置
US9518326B2 (en) Method for forming an electrostatic chuck using film printing technology
JP2012074650A (ja) プラズマ処理用トレイ及びプラズマ処理装置
TW202420491A (zh) 陶瓷基板、陶瓷基板之製造方法、靜電夾盤、基板固定裝置及半導體裝置之封裝
JP2851766B2 (ja) 静電チャック
JP2007142456A (ja) 静電チャック
TWI574294B (zh) A method of manufacturing a plasma processing chamber and an electrostatic chuck thereof
KR20230138930A (ko) 세라믹 기판, 세라믹 기판의 제조 방법, 정전 척, 기판 고정 장치, 및 반도체 장치용 패키지
JP2003168678A (ja) プラズマ処理装置
JP2004265991A (ja) 静電チャックの製造方法
JPH0395953A (ja) 静電吸着型ウエハサセプタ

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20180910

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20180910

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20190313

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20190326

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20191001