JP2017079291A - ウエーハの加工方法 - Google Patents

ウエーハの加工方法 Download PDF

Info

Publication number
JP2017079291A
JP2017079291A JP2015207469A JP2015207469A JP2017079291A JP 2017079291 A JP2017079291 A JP 2017079291A JP 2015207469 A JP2015207469 A JP 2015207469A JP 2015207469 A JP2015207469 A JP 2015207469A JP 2017079291 A JP2017079291 A JP 2017079291A
Authority
JP
Japan
Prior art keywords
wafer
resin
grinding
bumps
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2015207469A
Other languages
English (en)
Japanese (ja)
Inventor
俊輝 宮井
Toshiteru Miyai
俊輝 宮井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Disco Corp
Original Assignee
Disco Abrasive Systems Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Abrasive Systems Ltd filed Critical Disco Abrasive Systems Ltd
Priority to JP2015207469A priority Critical patent/JP2017079291A/ja
Priority to TW105131076A priority patent/TW201725616A/zh
Priority to CN201610893990.5A priority patent/CN106992150A/zh
Priority to KR1020160134301A priority patent/KR20170046584A/ko
Publication of JP2017079291A publication Critical patent/JP2017079291A/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/03—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/11—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Dicing (AREA)
JP2015207469A 2015-10-21 2015-10-21 ウエーハの加工方法 Pending JP2017079291A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2015207469A JP2017079291A (ja) 2015-10-21 2015-10-21 ウエーハの加工方法
TW105131076A TW201725616A (zh) 2015-10-21 2016-09-26 晶圓的加工方法
CN201610893990.5A CN106992150A (zh) 2015-10-21 2016-10-13 晶片的加工方法
KR1020160134301A KR20170046584A (ko) 2015-10-21 2016-10-17 웨이퍼의 가공 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015207469A JP2017079291A (ja) 2015-10-21 2015-10-21 ウエーハの加工方法

Publications (1)

Publication Number Publication Date
JP2017079291A true JP2017079291A (ja) 2017-04-27

Family

ID=58665464

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015207469A Pending JP2017079291A (ja) 2015-10-21 2015-10-21 ウエーハの加工方法

Country Status (4)

Country Link
JP (1) JP2017079291A (ko)
KR (1) KR20170046584A (ko)
CN (1) CN106992150A (ko)
TW (1) TW201725616A (ko)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180124758A (ko) * 2017-05-11 2018-11-21 가부시기가이샤 디스코 웨이퍼의 가공 방법
KR20180124757A (ko) * 2017-05-11 2018-11-21 가부시기가이샤 디스코 웨이퍼의 가공 방법
KR20180129643A (ko) * 2017-05-25 2018-12-05 가부시기가이샤 디스코 웨이퍼의 가공 방법
JP2019029543A (ja) * 2017-07-31 2019-02-21 株式会社ディスコ ウエーハの研削方法
JP2019121646A (ja) * 2017-12-28 2019-07-22 株式会社ディスコ ウェーハの加工方法
JP2019186355A (ja) * 2018-04-09 2019-10-24 株式会社ディスコ 保護シート配設方法
JP2019212710A (ja) * 2018-06-01 2019-12-12 株式会社ディスコ 樹脂パッケージ基板の加工方法
JP2020077709A (ja) * 2018-11-06 2020-05-21 株式会社ディスコ 金属膜付き半導体デバイスの製造方法
TWI759469B (zh) * 2017-04-28 2022-04-01 日商迪思科股份有限公司 晶圓加工方法
JP7132710B2 (ja) 2017-11-24 2022-09-07 株式会社ディスコ ウェーハの加工方法
JP7399565B2 (ja) 2019-12-23 2023-12-18 株式会社ディスコ 被加工物の加工方法
JP7431052B2 (ja) 2020-02-13 2024-02-14 株式会社ディスコ ウェーハの加工方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7157301B2 (ja) * 2017-11-06 2022-10-20 株式会社東京精密 ウェーハの加工方法
TWI670779B (zh) * 2018-11-16 2019-09-01 典琦科技股份有限公司 晶片封裝體的製造方法
CN110757278B (zh) * 2019-10-23 2020-09-18 清华大学 一种晶圆厚度测量装置和磨削机台
CN115870875B (zh) * 2022-12-08 2024-04-12 西安奕斯伟材料科技股份有限公司 一种用于研磨硅片的研磨盘及研磨设备

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002203828A (ja) * 2000-12-28 2002-07-19 Lintec Corp ウエハの裏面研削方法
JP2009194287A (ja) * 2008-02-18 2009-08-27 Denki Kagaku Kogyo Kk 電子部品集合体の研削方法とこれを用いた電子部品集合体の分割方法並びにこれら方法に用いる接着性樹脂

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002203828A (ja) * 2000-12-28 2002-07-19 Lintec Corp ウエハの裏面研削方法
JP2009194287A (ja) * 2008-02-18 2009-08-27 Denki Kagaku Kogyo Kk 電子部品集合体の研削方法とこれを用いた電子部品集合体の分割方法並びにこれら方法に用いる接着性樹脂

Cited By (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI759469B (zh) * 2017-04-28 2022-04-01 日商迪思科股份有限公司 晶圓加工方法
KR20180124757A (ko) * 2017-05-11 2018-11-21 가부시기가이샤 디스코 웨이퍼의 가공 방법
CN108878340A (zh) * 2017-05-11 2018-11-23 株式会社迪思科 晶片的加工方法
CN108878341A (zh) * 2017-05-11 2018-11-23 株式会社迪思科 晶片的加工方法
JP2018190937A (ja) * 2017-05-11 2018-11-29 株式会社ディスコ ウェーハの加工方法
JP2018190938A (ja) * 2017-05-11 2018-11-29 株式会社ディスコ ウェーハの加工方法
KR20180124758A (ko) * 2017-05-11 2018-11-21 가부시기가이샤 디스코 웨이퍼의 가공 방법
CN108878340B (zh) * 2017-05-11 2024-02-20 株式会社迪思科 晶片的加工方法
CN108878341B (zh) * 2017-05-11 2024-02-02 株式会社迪思科 晶片的加工方法
KR102445610B1 (ko) * 2017-05-11 2022-09-20 가부시기가이샤 디스코 웨이퍼의 가공 방법
KR102445608B1 (ko) * 2017-05-11 2022-09-20 가부시기가이샤 디스코 웨이퍼의 가공 방법
KR20180129643A (ko) * 2017-05-25 2018-12-05 가부시기가이샤 디스코 웨이퍼의 가공 방법
KR102450309B1 (ko) 2017-05-25 2022-09-30 가부시기가이샤 디스코 웨이퍼의 가공 방법
JP2019029543A (ja) * 2017-07-31 2019-02-21 株式会社ディスコ ウエーハの研削方法
JP6999322B2 (ja) 2017-07-31 2022-01-18 株式会社ディスコ ウエーハの研削方法
JP7132710B2 (ja) 2017-11-24 2022-09-07 株式会社ディスコ ウェーハの加工方法
JP7071782B2 (ja) 2017-12-28 2022-05-19 株式会社ディスコ ウェーハの加工方法
JP2019121646A (ja) * 2017-12-28 2019-07-22 株式会社ディスコ ウェーハの加工方法
JP7034809B2 (ja) 2018-04-09 2022-03-14 株式会社ディスコ 保護シート配設方法
JP2019186355A (ja) * 2018-04-09 2019-10-24 株式会社ディスコ 保護シート配設方法
JP2019212710A (ja) * 2018-06-01 2019-12-12 株式会社ディスコ 樹脂パッケージ基板の加工方法
JP7114176B2 (ja) 2018-06-01 2022-08-08 株式会社ディスコ 樹脂パッケージ基板の加工方法
JP7184458B2 (ja) 2018-11-06 2022-12-06 株式会社ディスコ 金属膜付き半導体デバイスの製造方法
JP2020077709A (ja) * 2018-11-06 2020-05-21 株式会社ディスコ 金属膜付き半導体デバイスの製造方法
JP7399565B2 (ja) 2019-12-23 2023-12-18 株式会社ディスコ 被加工物の加工方法
JP7431052B2 (ja) 2020-02-13 2024-02-14 株式会社ディスコ ウェーハの加工方法

Also Published As

Publication number Publication date
TW201725616A (zh) 2017-07-16
CN106992150A (zh) 2017-07-28
KR20170046584A (ko) 2017-05-02

Similar Documents

Publication Publication Date Title
JP2017079291A (ja) ウエーハの加工方法
KR102505700B1 (ko) 웨이퍼의 가공 방법
JP7071782B2 (ja) ウェーハの加工方法
KR20170030035A (ko) 웨이퍼의 가공 방법
JP2018113281A (ja) 樹脂パッケージ基板の加工方法
TWI754754B (zh) 晶圓加工方法
JP2017028160A (ja) ウエーハの加工方法
JP2017092125A (ja) ウエーハの加工方法
JP5545640B2 (ja) 研削方法
JP2016100346A (ja) ウェーハの加工方法
JP2017107984A (ja) ウエーハの加工方法
JP2020123666A (ja) 被加工物の加工方法
JP5907805B2 (ja) 表面保護テープ及びウエーハの加工方法
JP2017022162A (ja) ウエーハの加工方法
JP2018198241A (ja) ウェーハの加工方法
JP6621338B2 (ja) 被加工物の樹脂被覆方法及び被加工物の加工方法
JP2019009372A (ja) ウエーハの研削方法
TWI813624B (zh) 晶圓之加工方法
JP5378932B2 (ja) 被研削物の研削方法
JP6963409B2 (ja) ウェーハの加工方法
JP7132710B2 (ja) ウェーハの加工方法
JP7321652B2 (ja) ディスプレイパネルの製造方法
JP2017157679A (ja) パッケージウェーハの製造方法及びパッケージウェーハ
JP2017107988A (ja) ウエーハの加工方法
JP2017107985A (ja) ウエーハの加工方法

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20180816

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20190527

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20190604

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20191203