JP2017063099A5 - - Google Patents
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- JP2017063099A5 JP2017063099A5 JP2015187029A JP2015187029A JP2017063099A5 JP 2017063099 A5 JP2017063099 A5 JP 2017063099A5 JP 2015187029 A JP2015187029 A JP 2015187029A JP 2015187029 A JP2015187029 A JP 2015187029A JP 2017063099 A5 JP2017063099 A5 JP 2017063099A5
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- 238000000034 method Methods 0.000 claims 20
- 239000000758 substrate Substances 0.000 claims 16
- 238000005530 etching Methods 0.000 claims 8
- 239000000463 material Substances 0.000 claims 5
- 239000011347 resin Substances 0.000 claims 5
- 229920005989 resin Polymers 0.000 claims 5
- 239000004065 semiconductor Substances 0.000 claims 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims 1
- 229910001195 gallium oxide Inorganic materials 0.000 claims 1
- 229910010272 inorganic material Inorganic materials 0.000 claims 1
- 239000011147 inorganic material Substances 0.000 claims 1
- 230000001678 irradiating effect Effects 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 239000004038 photonic crystal Substances 0.000 claims 1
- 229910052594 sapphire Inorganic materials 0.000 claims 1
- 239000010980 sapphire Substances 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015187029A JP6548024B2 (ja) | 2015-09-24 | 2015-09-24 | 凹凸構造を含む基板の製造方法及び半導体発光素子の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015187029A JP6548024B2 (ja) | 2015-09-24 | 2015-09-24 | 凹凸構造を含む基板の製造方法及び半導体発光素子の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017063099A JP2017063099A (ja) | 2017-03-30 |
| JP2017063099A5 true JP2017063099A5 (enExample) | 2018-10-18 |
| JP6548024B2 JP6548024B2 (ja) | 2019-07-24 |
Family
ID=58429067
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015187029A Active JP6548024B2 (ja) | 2015-09-24 | 2015-09-24 | 凹凸構造を含む基板の製造方法及び半導体発光素子の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP6548024B2 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7050270B2 (ja) * | 2017-03-31 | 2022-04-08 | 国立研究開発法人情報通信研究機構 | 半導体発光素子及び発光モジュール |
| JP6863835B2 (ja) | 2017-06-26 | 2021-04-21 | 日機装株式会社 | 半導体発光素子および半導体発光素子の製造方法 |
| JP6865784B2 (ja) * | 2018-04-20 | 2021-04-28 | Ｄｏｗａエレクトロニクス株式会社 | 深紫外発光素子 |
| CN113539922A (zh) * | 2020-04-17 | 2021-10-22 | 中国科学院苏州纳米技术与纳米仿生研究所 | 一种半导体复合层及其制作方法 |
| JP2024070034A (ja) * | 2022-11-10 | 2024-05-22 | 国立研究開発法人情報通信研究機構 | 半導体発光素子及び発光モジュール |
| CN115799411B (zh) * | 2022-12-22 | 2024-08-30 | 广东中图半导体科技股份有限公司 | 一种图形化复合衬底、制备方法及led外延片 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4692205A (en) * | 1986-01-31 | 1987-09-08 | International Business Machines Corporation | Silicon-containing polyimides as oxygen etch stop and dual dielectric coatings |
| JPH04364726A (ja) * | 1991-06-11 | 1992-12-17 | Mitsubishi Electric Corp | パターン形成方法 |
| JP2004107765A (ja) * | 2002-09-20 | 2004-04-08 | Japan Science & Technology Corp | シリコン表面および金属表面の処理方法 |
| JP2005136106A (ja) * | 2003-10-29 | 2005-05-26 | Kyocera Corp | 単結晶サファイア基板とその製造方法及び半導体発光素子 |
| JP6177168B2 (ja) * | 2013-05-08 | 2017-08-09 | 旭化成株式会社 | エッチング被加工材及びそれを用いたエッチング方法 |
| EP3026716B1 (en) * | 2013-07-30 | 2020-12-16 | National Institute of Information and Communications Technology | Semiconductor light emitting element and method for manufacturing same |
-
2015
- 2015-09-24 JP JP2015187029A patent/JP6548024B2/ja active Active
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