JP6548024B2 - 凹凸構造を含む基板の製造方法及び半導体発光素子の製造方法 - Google Patents

凹凸構造を含む基板の製造方法及び半導体発光素子の製造方法 Download PDF

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JP6548024B2
JP6548024B2 JP2015187029A JP2015187029A JP6548024B2 JP 6548024 B2 JP6548024 B2 JP 6548024B2 JP 2015187029 A JP2015187029 A JP 2015187029A JP 2015187029 A JP2015187029 A JP 2015187029A JP 6548024 B2 JP6548024 B2 JP 6548024B2
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井上　振一郎
振一郎 井上
直樹 溜
直樹 溜
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National Institute of Information and Communications Technology
Stanley Electric Co Ltd
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JP2015187029A 2015-09-24 2015-09-24 凹凸構造を含む基板の製造方法及び半導体発光素子の製造方法 Active JP6548024B2 (ja)

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JP7050270B2 (ja) * 2017-03-31 2022-04-08 国立研究開発法人情報通信研究機構 半導体発光素子及び発光モジュール
JP6863835B2 (ja) 2017-06-26 2021-04-21 日機装株式会社 半導体発光素子および半導体発光素子の製造方法
JP6865784B2 (ja) * 2018-04-20 2021-04-28 Ｄｏｗａエレクトロニクス株式会社 深紫外発光素子
CN113539922A (zh) * 2020-04-17 2021-10-22 中国科学院苏州纳米技术与纳米仿生研究所 一种半导体复合层及其制作方法
JP2024070034A (ja) * 2022-11-10 2024-05-22 国立研究開発法人情報通信研究機構 半導体発光素子及び発光モジュール
CN115799411B (zh) * 2022-12-22 2024-08-30 广东中图半导体科技股份有限公司 一种图形化复合衬底、制备方法及led外延片

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US4692205A (en) * 1986-01-31 1987-09-08 International Business Machines Corporation Silicon-containing polyimides as oxygen etch stop and dual dielectric coatings
JPH04364726A (ja) * 1991-06-11 1992-12-17 Mitsubishi Electric Corp パターン形成方法
JP2004107765A (ja) * 2002-09-20 2004-04-08 Japan Science & Technology Corp シリコン表面および金属表面の処理方法
JP2005136106A (ja) * 2003-10-29 2005-05-26 Kyocera Corp 単結晶サファイア基板とその製造方法及び半導体発光素子
JP6177168B2 (ja) * 2013-05-08 2017-08-09 旭化成株式会社 エッチング被加工材及びそれを用いたエッチング方法
US10069049B2 (en) * 2013-07-30 2018-09-04 National Institute Of Information And Communicatio Semiconductor light emitting element and method for manufacturing the same

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