JP2017054901A - Ｉｉｉ族窒化物半導体発光装置とその製造方法 - Google Patents

Ｉｉｉ族窒化物半導体発光装置とその製造方法 Download PDF

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Publication number
JP2017054901A
JP2017054901A JP2015177254A JP2015177254A JP2017054901A JP 2017054901 A JP2017054901 A JP 2017054901A JP 2015177254 A JP2015177254 A JP 2015177254A JP 2015177254 A JP2015177254 A JP 2015177254A JP 2017054901 A JP2017054901 A JP 2017054901A
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Japan
Prior art keywords
dielectric film
transparent conductive
conductive oxide
emitting device
phosphor resin
Prior art date
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Pending
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JP2015177254A
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English (en)
Japanese (ja)
Inventor
真悟 戸谷
Shingo Toya
真悟 戸谷
浩一 五所野尾
Koichi Goshonoo
浩一 五所野尾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyoda Gosei Co Ltd
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Toyoda Gosei Co Ltd
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Publication date
Application filed by Toyoda Gosei Co Ltd filed Critical Toyoda Gosei Co Ltd
Priority to JP2015177254A priority Critical patent/JP2017054901A/ja
Priority to CN201610812839.4A priority patent/CN106887503B/zh
Publication of JP2017054901A publication Critical patent/JP2017054901A/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0025—Processes relating to coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)
JP2015177254A 2015-09-09 2015-09-09 Ｉｉｉ族窒化物半導体発光装置とその製造方法 Pending JP2017054901A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2015177254A JP2017054901A (ja) 2015-09-09 2015-09-09 Ｉｉｉ族窒化物半導体発光装置とその製造方法
CN201610812839.4A CN106887503B (zh) 2015-09-09 2016-09-09 Iii族氮化物半导体发光装置及其制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015177254A JP2017054901A (ja) 2015-09-09 2015-09-09 Ｉｉｉ族窒化物半導体発光装置とその製造方法

Publications (1)

Publication Number Publication Date
JP2017054901A true JP2017054901A (ja) 2017-03-16

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ID=58317255

Family Applications (1)

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JP2015177254A Pending JP2017054901A (ja) 2015-09-09 2015-09-09 Ｉｉｉ族窒化物半導体発光装置とその製造方法

Country Status (2)

Country Link
JP (1) JP2017054901A (zh)
CN (1) CN106887503B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108281529A (zh) * 2018-04-04 2018-07-13 佛山市国星半导体技术有限公司 一种具有抗打击电极的led芯片及其制作方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09129922A (ja) * 1995-10-31 1997-05-16 Sanyo Electric Co Ltd 発光素子と発光素子の製造方法
JP2011192999A (ja) * 2010-03-15 2011-09-29 Lg Innotek Co Ltd 発光素子
US20130001615A1 (en) * 2011-06-30 2013-01-03 Shin Kim Light emitting device and lighting system with the same
JP2013214743A (ja) * 2012-03-30 2013-10-17 Advanced Optoelectronic Technology Inc 発光ダイオードチップ及びその製造方法
JP2014057010A (ja) * 2012-09-13 2014-03-27 Toyoda Gosei Co Ltd 半導体発光素子とその製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4024994B2 (ja) * 2000-06-30 2007-12-19 株式会社東芝 半導体発光素子
CN1316640C (zh) * 2003-10-13 2007-05-16 光磊科技股份有限公司 可提高发光作用区域的发光元件
KR100887139B1 (ko) * 2007-02-12 2009-03-04 삼성전기주식회사 질화물 반도체 발광소자 및 제조방법
JP4686625B2 (ja) * 2009-08-03 2011-05-25 株式会社東芝 半導体発光装置の製造方法
KR20120015651A (ko) * 2010-08-12 2012-02-22 서울옵토디바이스주식회사 개선된 광 추출 효율을 갖는 발광 다이오드
JP5628056B2 (ja) * 2011-01-21 2014-11-19 スタンレー電気株式会社 半導体発光素子
JP5949294B2 (ja) * 2011-08-31 2016-07-06 日亜化学工業株式会社 半導体発光素子
JP5644753B2 (ja) * 2011-12-26 2014-12-24 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子
KR20150039518A (ko) * 2013-10-02 2015-04-10 엘지이노텍 주식회사 발광소자

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09129922A (ja) * 1995-10-31 1997-05-16 Sanyo Electric Co Ltd 発光素子と発光素子の製造方法
JP2011192999A (ja) * 2010-03-15 2011-09-29 Lg Innotek Co Ltd 発光素子
US20130001615A1 (en) * 2011-06-30 2013-01-03 Shin Kim Light emitting device and lighting system with the same
JP2013214743A (ja) * 2012-03-30 2013-10-17 Advanced Optoelectronic Technology Inc 発光ダイオードチップ及びその製造方法
JP2014057010A (ja) * 2012-09-13 2014-03-27 Toyoda Gosei Co Ltd 半導体発光素子とその製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108281529A (zh) * 2018-04-04 2018-07-13 佛山市国星半导体技术有限公司 一种具有抗打击电极的led芯片及其制作方法
CN108281529B (zh) * 2018-04-04 2024-06-25 佛山市国星半导体技术有限公司 一种具有抗打击电极的led芯片及其制作方法

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Publication number Publication date
CN106887503A (zh) 2017-06-23
CN106887503B (zh) 2019-06-28

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