JP2017045773A - 発光装置 - Google Patents
発光装置 Download PDFInfo
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- JP2017045773A JP2017045773A JP2015165117A JP2015165117A JP2017045773A JP 2017045773 A JP2017045773 A JP 2017045773A JP 2015165117 A JP2015165117 A JP 2015165117A JP 2015165117 A JP2015165117 A JP 2015165117A JP 2017045773 A JP2017045773 A JP 2017045773A
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- 239000000758 substrate Substances 0.000 claims abstract description 164
- 239000002245 particle Substances 0.000 claims abstract description 93
- 239000004065 semiconductor Substances 0.000 claims abstract description 85
- 239000000463 material Substances 0.000 claims abstract description 58
- 238000007789 sealing Methods 0.000 claims description 50
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 30
- 238000000149 argon plasma sintering Methods 0.000 claims description 29
- 229920005989 resin Polymers 0.000 description 33
- 239000011347 resin Substances 0.000 description 33
- 239000000049 pigment Substances 0.000 description 14
- 239000011521 glass Substances 0.000 description 13
- 230000003287 optical effect Effects 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 11
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 9
- 238000002156 mixing Methods 0.000 description 9
- 239000010936 titanium Substances 0.000 description 9
- 229910052719 titanium Inorganic materials 0.000 description 9
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 8
- 239000007788 liquid Substances 0.000 description 8
- 239000002243 precursor Substances 0.000 description 8
- 229920002050 silicone resin Polymers 0.000 description 8
- 230000002238 attenuated effect Effects 0.000 description 5
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- 229920000647 polyepoxide Polymers 0.000 description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 4
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- 229910010413 TiO 2 Inorganic materials 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
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- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229920001296 polysiloxane Polymers 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 229920002647 polyamide Polymers 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
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- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
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- 230000001070 adhesive effect Effects 0.000 description 2
- 150000004703 alkoxides Chemical class 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
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- 229910019655 synthetic inorganic crystalline material Inorganic materials 0.000 description 2
- 239000012463 white pigment Substances 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910003564 SiAlON Inorganic materials 0.000 description 1
- 229910004283 SiO 4 Inorganic materials 0.000 description 1
- FNCIDSNKNZQJTJ-UHFFFAOYSA-N alumane;terbium Chemical class [AlH3].[Tb] FNCIDSNKNZQJTJ-UHFFFAOYSA-N 0.000 description 1
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical class [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 1
- 230000037237 body shape Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
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- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
Description
[比較評価]
実施例1の発光装置10の光度調整の容易性に関して、比較例の発光装置を用いて比較評価を行った。図3は、比較例の発光装置30の断面図である。比較例の発光装置30は、実施例1の発光装置10と同じ基本構成であり、遮光体を有していないことと、封止体中に遮光粒子が含有されている点のみが異なる発光装置である。
すなわち、リフレクタ55の内壁面は、発光層49bからの出射光を反射する反射面となっている。
[変形例]
図7は、実施例1の発光装置10において、透光性の素子基板17の代わりに、非透光性の素子基板17Bを用いた変形例の、一部拡大断面図Bである。上面図及び断面図については、図1A及び図1Bと同様の構造を有している。
11、41、71 パッケージ基板
13、43、73 接続電極
15、45、79 発光素子
17、47、75 素子基板
19、49、77 半導体構造層
21、81 導電ワイヤ
23、53、83 遮光体
25、55 リフレクタ
27、57、87 封止体
28、58 光出射面
Claims (5)
- 第1の基板と、
第2の基板及び前記第2の基板上に形成され且つ発光層を含む半導体構造層からなり、前記第1の基板上に搭載された発光素子と、
前記発光素子の、前記第1の基板側の面と反対側の面上のみに形成され、遮光粒子を含む材料からなる遮光体と、
を有することを特徴とする発光装置。 - 前記第2の基板は、前記発光層からの出射光に対して透光性を有する透光性基板であることを特徴とする請求項1に記載の発光装置。
- 前記発光素子及び前記遮光体を前記第1の基板上に埋設するように形成された封止体を含み、前記封止体は蛍光体粒子または光散乱材を含むことを特徴とする請求項1乃至2のいずれか1に記載の発光装置。
- 前記発光素子が搭載された前記第1の基板面上に設けられて、前記発光素子を囲む枠体を有し、前記枠体の内側面は前記発光層からの出射光を反射する反射面であることを特徴とする請求項1乃至3のいずれか1に記載の発光装置。
- 前記半導体構造層及び前記第2の基板は、前記第1の基板上から前記半導体構造層、前記第2の基板の順に配されており、前記第2の基板の前記第1の基板側の面と反対側の面に前記遮光体が形成されていることを特徴とする請求項1乃至4のいずれか1に記載の発光装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015165117A JP6632834B2 (ja) | 2015-08-24 | 2015-08-24 | 発光装置 |
US15/244,548 US9997679B2 (en) | 2015-08-24 | 2016-08-23 | Light-emitting device |
CN201610720988.8A CN106486582B (zh) | 2015-08-24 | 2016-08-24 | 发光装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015165117A JP6632834B2 (ja) | 2015-08-24 | 2015-08-24 | 発光装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017045773A true JP2017045773A (ja) | 2017-03-02 |
JP6632834B2 JP6632834B2 (ja) | 2020-01-22 |
Family
ID=58096009
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015165117A Active JP6632834B2 (ja) | 2015-08-24 | 2015-08-24 | 発光装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US9997679B2 (ja) |
JP (1) | JP6632834B2 (ja) |
CN (1) | CN106486582B (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019046989A (ja) * | 2017-09-04 | 2019-03-22 | スタンレー電気株式会社 | 半導体発光装置及び半導体発光装置の製造方法 |
JP2020092231A (ja) * | 2018-12-07 | 2020-06-11 | スタンレー電気株式会社 | 発光装置 |
JP2020205355A (ja) * | 2019-06-18 | 2020-12-24 | スタンレー電気株式会社 | 発光装置 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019156921A1 (en) | 2018-02-08 | 2019-08-15 | Snap Cpap, Llc | Self-sanitizing respiratory assembly and methods of making and using the same |
KR102594815B1 (ko) * | 2018-06-20 | 2023-10-30 | 엘지이노텍 주식회사 | 조명 모듈 및 이를 구비한 조명 장치 |
CN110405351B (zh) * | 2019-06-29 | 2021-04-27 | 东莞泰升玻璃有限公司 | 一种玻璃表面激光雕刻方法 |
DE102022112355A1 (de) | 2022-05-17 | 2023-11-23 | Ams-Osram International Gmbh | Verfahren zum herstellen eines optoelektronischen bauelements und optoelektronisches bauelement |
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2015
- 2015-08-24 JP JP2015165117A patent/JP6632834B2/ja active Active
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2016
- 2016-08-23 US US15/244,548 patent/US9997679B2/en active Active
- 2016-08-24 CN CN201610720988.8A patent/CN106486582B/zh active Active
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JP6632834B2 (ja) | 2020-01-22 |
US9997679B2 (en) | 2018-06-12 |
CN106486582B (zh) | 2020-05-01 |
US20170062677A1 (en) | 2017-03-02 |
CN106486582A (zh) | 2017-03-08 |
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