JP2017045495A5 - - Google Patents

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Publication number
JP2017045495A5
JP2017045495A5 JP2015168522A JP2015168522A JP2017045495A5 JP 2017045495 A5 JP2017045495 A5 JP 2017045495A5 JP 2015168522 A JP2015168522 A JP 2015168522A JP 2015168522 A JP2015168522 A JP 2015168522A JP 2017045495 A5 JP2017045495 A5 JP 2017045495A5
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Japan
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control signal
search
cell array
match
activated
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JP2015168522A
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Japanese (ja)
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JP6533129B2 (ja
JP2017045495A (ja
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Priority claimed from JP2015168522A external-priority patent/JP6533129B2/ja
Priority to JP2015168522A priority Critical patent/JP6533129B2/ja
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Priority to US15/227,161 priority patent/US9824757B2/en
Priority to CN201610743715.5A priority patent/CN106486159B/zh
Publication of JP2017045495A publication Critical patent/JP2017045495A/ja
Priority to US15/787,406 priority patent/US10068646B2/en
Publication of JP2017045495A5 publication Critical patent/JP2017045495A5/ja
Priority to US16/056,321 priority patent/US10366755B2/en
Publication of JP6533129B2 publication Critical patent/JP6533129B2/ja
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JP2015168522A 2015-08-28 2015-08-28 半導体装置 Active JP6533129B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2015168522A JP6533129B2 (ja) 2015-08-28 2015-08-28 半導体装置
US15/227,161 US9824757B2 (en) 2015-08-28 2016-08-03 Semiconductor device including TCAM cell arrays capable of skipping TCAM-cell search in response to control signal
CN201610743715.5A CN106486159B (zh) 2015-08-28 2016-08-26 半导体器件
US15/787,406 US10068646B2 (en) 2015-08-28 2017-10-18 Semiconductor device including TCAM cell arrays capable of skipping TCAM-cell search in response to control signal
US16/056,321 US10366755B2 (en) 2015-08-28 2018-08-06 Semiconductor device including TCAM cell arrays capable of skipping TCAM-cell search in response to control signal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015168522A JP6533129B2 (ja) 2015-08-28 2015-08-28 半導体装置

Publications (3)

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JP2017045495A JP2017045495A (ja) 2017-03-02
JP2017045495A5 true JP2017045495A5 (enExample) 2018-06-21
JP6533129B2 JP6533129B2 (ja) 2019-06-19

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JP2015168522A Active JP6533129B2 (ja) 2015-08-28 2015-08-28 半導体装置

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US (3) US9824757B2 (enExample)
JP (1) JP6533129B2 (enExample)
CN (1) CN106486159B (enExample)

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JP6533129B2 (ja) 2015-08-28 2019-06-19 ルネサスエレクトロニクス株式会社 半導体装置
JP2018206452A (ja) 2017-05-30 2018-12-27 ルネサスエレクトロニクス株式会社 内容参照メモリ及び半導体装置
JP2019117678A (ja) * 2017-12-27 2019-07-18 ルネサスエレクトロニクス株式会社 半導体装置
US10910056B2 (en) 2018-02-22 2021-02-02 Renesas Electronics Corporation Semiconductor device
JP2020047351A (ja) * 2018-09-20 2020-03-26 株式会社東芝 Ｃａｍマクロ回路および半導体集積回路
CN109637571B (zh) * 2018-12-21 2020-11-20 成都海光集成电路设计有限公司 三态内容可寻址存储器搜索线分割控制装置、系统和方法
TWI794510B (zh) * 2019-06-12 2023-03-01 聯華電子股份有限公司 三元內容可定址記憶體單元
US10930348B1 (en) * 2019-08-13 2021-02-23 Hewlett Packard Enterprise Development Lp Content addressable memory-encoded crossbar array in dot product engines
US11894054B2 (en) 2019-10-22 2024-02-06 Mediatek Singapore Pte. Ltd. Methods for writing ternary content addressable memory devices
US11404121B2 (en) * 2019-10-22 2022-08-02 Mediatek Singapore Pte. Ltd. Methods for writing ternary content addressable memory devices
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US12184544B1 (en) * 2021-03-31 2024-12-31 DreamBig Semiconductor Inc. Data compression for LPM in TCAM
CN114898792A (zh) * 2022-04-14 2022-08-12 浙江大学 多比特存内内积暨异或单元、异或向量及操作方法

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