JP6533129B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP6533129B2
JP6533129B2 JP2015168522A JP2015168522A JP6533129B2 JP 6533129 B2 JP6533129 B2 JP 6533129B2 JP 2015168522 A JP2015168522 A JP 2015168522A JP 2015168522 A JP2015168522 A JP 2015168522A JP 6533129 B2 JP6533129 B2 JP 6533129B2
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Japan
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data
search
match
tcam
control signal
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JP2015168522A
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Japanese (ja)
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JP2017045495A5 (enExample
JP2017045495A (ja
Inventor
直也 渡邊
直也 渡邊
太 伊賀上
太 伊賀上
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Renesas Electronics Corp
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Renesas Electronics Corp
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Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2015168522A priority Critical patent/JP6533129B2/ja
Priority to US15/227,161 priority patent/US9824757B2/en
Priority to CN201610743715.5A priority patent/CN106486159B/zh
Publication of JP2017045495A publication Critical patent/JP2017045495A/ja
Priority to US15/787,406 priority patent/US10068646B2/en
Publication of JP2017045495A5 publication Critical patent/JP2017045495A5/ja
Priority to US16/056,321 priority patent/US10366755B2/en
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Publication of JP6533129B2 publication Critical patent/JP6533129B2/ja
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
    • G11C15/043—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements using capacitive charge storage elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
    • G11C15/046—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements using non-volatile storage elements

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  • Static Random-Access Memory (AREA)
  • Logic Circuits (AREA)
JP2015168522A 2015-08-28 2015-08-28 半導体装置 Active JP6533129B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2015168522A JP6533129B2 (ja) 2015-08-28 2015-08-28 半導体装置
US15/227,161 US9824757B2 (en) 2015-08-28 2016-08-03 Semiconductor device including TCAM cell arrays capable of skipping TCAM-cell search in response to control signal
CN201610743715.5A CN106486159B (zh) 2015-08-28 2016-08-26 半导体器件
US15/787,406 US10068646B2 (en) 2015-08-28 2017-10-18 Semiconductor device including TCAM cell arrays capable of skipping TCAM-cell search in response to control signal
US16/056,321 US10366755B2 (en) 2015-08-28 2018-08-06 Semiconductor device including TCAM cell arrays capable of skipping TCAM-cell search in response to control signal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015168522A JP6533129B2 (ja) 2015-08-28 2015-08-28 半導体装置

Publications (3)

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JP2017045495A JP2017045495A (ja) 2017-03-02
JP2017045495A5 JP2017045495A5 (enExample) 2018-06-21
JP6533129B2 true JP6533129B2 (ja) 2019-06-19

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JP2015168522A Active JP6533129B2 (ja) 2015-08-28 2015-08-28 半導体装置

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US (3) US9824757B2 (enExample)
JP (1) JP6533129B2 (enExample)
CN (1) CN106486159B (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6533129B2 (ja) 2015-08-28 2019-06-19 ルネサスエレクトロニクス株式会社 半導体装置
JP2018206452A (ja) 2017-05-30 2018-12-27 ルネサスエレクトロニクス株式会社 内容参照メモリ及び半導体装置
JP2019117678A (ja) * 2017-12-27 2019-07-18 ルネサスエレクトロニクス株式会社 半導体装置
US10910056B2 (en) 2018-02-22 2021-02-02 Renesas Electronics Corporation Semiconductor device
JP2020047351A (ja) * 2018-09-20 2020-03-26 株式会社東芝 Ｃａｍマクロ回路および半導体集積回路
CN109637571B (zh) * 2018-12-21 2020-11-20 成都海光集成电路设计有限公司 三态内容可寻址存储器搜索线分割控制装置、系统和方法
TWI794510B (zh) * 2019-06-12 2023-03-01 聯華電子股份有限公司 三元內容可定址記憶體單元
US10930348B1 (en) * 2019-08-13 2021-02-23 Hewlett Packard Enterprise Development Lp Content addressable memory-encoded crossbar array in dot product engines
US11894054B2 (en) 2019-10-22 2024-02-06 Mediatek Singapore Pte. Ltd. Methods for writing ternary content addressable memory devices
US11404121B2 (en) * 2019-10-22 2022-08-02 Mediatek Singapore Pte. Ltd. Methods for writing ternary content addressable memory devices
CN110993005B (zh) * 2019-12-11 2021-03-26 海光信息技术股份有限公司 电路结构、芯片、训练方法及训练装置
US11133065B1 (en) 2020-03-06 2021-09-28 Micron Technology, Inc. Architecture for ternary content-addressable memory search
US11599090B2 (en) * 2020-09-30 2023-03-07 Rockwell Automation Technologies, Inc. System and method of network synchronized time in safety applications
US11967377B2 (en) * 2021-01-08 2024-04-23 Mediatek Singapore Pte. Ltd. Dynamically gated search lines for low-power multi-stage content addressable memory
TWI744204B (zh) * 2021-03-15 2021-10-21 瑞昱半導體股份有限公司 適用於內容可定址記憶體的遮蔽電路與預充電電路
US12184544B1 (en) * 2021-03-31 2024-12-31 DreamBig Semiconductor Inc. Data compression for LPM in TCAM
CN114898792A (zh) * 2022-04-14 2022-08-12 浙江大学 多比特存内内积暨异或单元、异或向量及操作方法

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KR950008676B1 (ko) * 1986-04-23 1995-08-04 가부시기가이샤 히다찌세이사꾸쇼 반도체 메모리 장치 및 그의 결함 구제 방법
JP2585227B2 (ja) * 1986-07-25 1997-02-26 株式会社日立製作所 半導体メモリ装置
JPH10275479A (ja) * 1997-03-31 1998-10-13 Kawasaki Steel Corp 連想メモリおよびネットワークフレーム中継器
JP3478749B2 (ja) * 1999-02-05 2003-12-15 インターナショナル・ビジネス・マシーンズ・コーポレーション 連想メモリ（ｃａｍ）のワードマッチラインのプリチャージ回路および方法
JP2002197873A (ja) * 2000-12-27 2002-07-12 Kawasaki Microelectronics Kk 連想メモリ
JP2003272386A (ja) 2002-03-20 2003-09-26 Mitsubishi Electric Corp Ｔｃａｍセル、ｔｃａｍセルアレイ、アドレス検索メモリおよびネットワークアドレス検索装置
JP4541077B2 (ja) * 2004-01-13 2010-09-08 株式会社日立超エル・エス・アイ・システムズ 半導体記憶装置
US20080006280A1 (en) * 2004-07-20 2008-01-10 Anthony Aliberto Magnetic navigation maneuvering sheath
KR101484499B1 (ko) * 2005-02-14 2015-01-20 존슨 앤드 존슨 비젼 케어, 인코포레이티드 안과용 렌즈의 제조방법, 안과용 장치 및 콘택트 렌즈
JP4343859B2 (ja) * 2005-02-17 2009-10-14 株式会社日立製作所 半導体装置
US7274581B1 (en) * 2006-05-04 2007-09-25 Texas Instruments Incorporated Array fault testing approach for TCAMs
US7414872B2 (en) * 2006-09-12 2008-08-19 Jinn-Shyan Wang Segmented search line circuit device for content addressable memory
US7760135B2 (en) * 2007-11-27 2010-07-20 Lockheed Martin Corporation Robust pulse deinterleaving
US7940541B2 (en) * 2008-05-21 2011-05-10 Texas Instruments Incorporated Bit cell designs for ternary content addressable memory
US7881090B2 (en) * 2009-03-16 2011-02-01 Netlogic Microsystems, Inc. Content addressable memory (CAM) array capable of implementing read or write operations during search operations
US8320148B1 (en) * 2009-06-25 2012-11-27 Adesto Technologies Corporation PMC-based non-volatile CAM
JP5477621B2 (ja) * 2009-08-03 2014-04-23 ルネサスエレクトロニクス株式会社 連想メモリ
JP2011181147A (ja) * 2010-03-02 2011-09-15 Renesas Electronics Corp 連想記憶装置
CN101859596A (zh) * 2010-06-02 2010-10-13 中国科学院声学研究所 一种内容可寻址存储器
JP5893465B2 (ja) * 2012-03-27 2016-03-23 ルネサスエレクトロニクス株式会社 連想記憶装置
US8891273B2 (en) * 2012-12-26 2014-11-18 Qualcomm Incorporated Pseudo-NOR cell for ternary content addressable memory
US9275735B2 (en) * 2014-01-06 2016-03-01 International Business Machines Corporation Array organization and architecture to perform range-match operations with content addressable memory (CAM) circuits
JP6533129B2 (ja) * 2015-08-28 2019-06-19 ルネサスエレクトロニクス株式会社 半導体装置
JP6592310B2 (ja) * 2015-09-01 2019-10-16 ルネサスエレクトロニクス株式会社 半導体装置

Also Published As

Publication number Publication date
CN106486159A (zh) 2017-03-08
CN106486159B (zh) 2021-10-26
US10068646B2 (en) 2018-09-04
US20170062051A1 (en) 2017-03-02
US20180350439A1 (en) 2018-12-06
JP2017045495A (ja) 2017-03-02
US20180040373A1 (en) 2018-02-08
US9824757B2 (en) 2017-11-21
US10366755B2 (en) 2019-07-30

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