JP2017034123A - 密着度合検出方法 - Google Patents
密着度合検出方法 Download PDFInfo
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- JP2017034123A JP2017034123A JP2015153425A JP2015153425A JP2017034123A JP 2017034123 A JP2017034123 A JP 2017034123A JP 2015153425 A JP2015153425 A JP 2015153425A JP 2015153425 A JP2015153425 A JP 2015153425A JP 2017034123 A JP2017034123 A JP 2017034123A
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- protective tape
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- height difference
- adhesive layer
- adhesion
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- 238000001514 detection method Methods 0.000 title claims abstract description 32
- 230000001681 protective effect Effects 0.000 claims abstract description 75
- 238000003384 imaging method Methods 0.000 claims abstract description 22
- 239000012790 adhesive layer Substances 0.000 claims description 35
- 238000000034 method Methods 0.000 claims description 25
- 230000001070 adhesive effect Effects 0.000 claims description 5
- 239000000853 adhesive Substances 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 abstract description 43
- 230000006870 function Effects 0.000 description 5
- 239000010410 layer Substances 0.000 description 4
- 238000003825 pressing Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 239000004800 polyvinyl chloride Substances 0.000 description 2
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N19/00—Investigating materials by mechanical methods
- G01N19/04—Measuring adhesive force between materials, e.g. of sealing tape, of coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
- G01N1/2813—Producing thin layers of samples on a substrate, e.g. smearing, spinning-on
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/14—Protective coatings, e.g. hard coatings
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
- G01N1/2813—Producing thin layers of samples on a substrate, e.g. smearing, spinning-on
- G01N2001/2833—Collecting samples on a sticky, tacky, adhesive surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Biochemistry (AREA)
- Chemical & Material Sciences (AREA)
- Pathology (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Analytical Chemistry (AREA)
- Immunology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Optics & Photonics (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Dicing (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
【解決手段】表面に複数の分割予定ラインが形成されているとともに区画された複数の領域にデバイスが形成されたウエーハの表面に、粘着層を備えた保護テープを貼着する際のウエーハに対する保護テープの密着度合を検出する密着度合検出方法である。ウエーハの表面保護テープを貼着する工程と、貼着された保護テープを剥離する工程と、ウエーハの表面の任意の特定領域を撮像し、表面の凹凸の第1の高低差を検出する工程と、ウエーハの表面から剥離された保護テープ3における特定領域に対応する粘着層の対象領域Bを撮像し、粘着層に転写された凹凸の第2の高低差d1を検出する工程と、第1の高低差と第2の高低差とを比較して差が許容範囲内であれば密着度合は合格と判定し、許容範囲外であれば不合格と判定する工程とを含む。
【選択図】図6
Description
ウエーハの表面に粘着層を対面させて保護テープを貼着する保護テープ貼着工程と、
ウエーハの表面に貼着された保護テープを剥離する保護テープ剥離工程と、
ウエーハの表面の任意の特定領域を撮像し、表面の凹凸の第1の高低差を検出する第1の高低差検出工程と、
ウエーハの表面から剥離された保護テープにおける該特定領域に対応する粘着層の対称領域を撮像し、粘着層に転写された凹凸の第2の高低差を検出する第2の高低差検出工程と、
該第1の高低差と該第2の高低差とを比較して該第2の高低差が該第1の高低差に対して許容範囲内であれば密着度合は合格と判定し、許容範囲外であれば密着度合は不合格と判定する判定工程と、を含む、
ことを特徴とする密着度合検出方法が提供される。
以下、上述した半導体ウエーハ2を用いて実施する本発明による密着度合検出方法について説明する。
なお、上述した第1の高低差検出工程は、上記保護テープ貼着工程を実施する前に実施してもよい。
21:分割予定ライン
22:デバイス
3:粘着テープ
4:ローラ
5:紫外線照射器
6:高低差検出装置
61:撮像手段
62:制御手段
63:表示手段
Claims (2)
- 表面に複数の分割予定ラインが形成されているとともに該複数の分割予定ラインによって区画された複数の領域にデバイスが形成されたウエーハの表面に、粘着層を備えた保護テープを貼着する際のウエーハに対する保護テープの密着度合を検出する密着度合検出方法であって、
ウエーハの表面に粘着層を対面させて保護テープを貼着する保護テープ貼着工程と、
ウエーハの表面に貼着された保護テープを剥離する保護テープ剥離工程と、
ウエーハの表面の任意の特定領域を撮像し、表面の凹凸の第1の高低差を検出する第1の高低差検出工程と、
ウエーハの表面から剥離された保護テープにおける該特定領域に対応する粘着層の対称領域を撮像し、粘着層に転写された凹凸の第2の高低差を検出する第2の高低差検出工程と、
該第1の高低差と該第2の高低差とを比較して該第2の高低差が該第1の高低差に対して許容範囲内であれば密着度合は合格と判定し、許容範囲外であれば密着度合は不合格と判定する判定工程と、を含む、
ことを特徴とする密着度合検出方法。 - 保護テープの粘着層は紫外線を照射することによって硬化する粘着剤からなっており、該保護テープ剥離工程を実施する前に、ウエーハの表面に貼着された保護テープの粘着層に紫外線を照射して粘着層を硬化せしめる粘着層硬化工程を実施する、請求項1記載の密着度合検出方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015153425A JP6560052B2 (ja) | 2015-08-03 | 2015-08-03 | 密着度合検出方法 |
TW105121234A TWI693649B (zh) | 2015-08-03 | 2016-07-05 | 密接度檢測方法 |
US15/219,737 US9859143B2 (en) | 2015-08-03 | 2016-07-26 | Adhesion detecting method |
KR1020160095921A KR102413288B1 (ko) | 2015-08-03 | 2016-07-28 | 밀착 정도 검출 방법 |
CN201610620260.8A CN106409710B (zh) | 2015-08-03 | 2016-08-01 | 密接程度检测方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015153425A JP6560052B2 (ja) | 2015-08-03 | 2015-08-03 | 密着度合検出方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017034123A true JP2017034123A (ja) | 2017-02-09 |
JP6560052B2 JP6560052B2 (ja) | 2019-08-14 |
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Family Applications (1)
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JP2015153425A Active JP6560052B2 (ja) | 2015-08-03 | 2015-08-03 | 密着度合検出方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9859143B2 (ja) |
JP (1) | JP6560052B2 (ja) |
KR (1) | KR102413288B1 (ja) |
CN (1) | CN106409710B (ja) |
TW (1) | TWI693649B (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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US10748272B2 (en) | 2017-05-18 | 2020-08-18 | Applied Materials Israel Ltd. | Measuring height difference in patterns on semiconductor wafers |
EP3633718A1 (en) * | 2018-10-01 | 2020-04-08 | Infineon Technologies AG | Detection of adhesive residue on a wafer |
CN112563147B (zh) * | 2020-12-07 | 2023-05-12 | 英特尔产品(成都)有限公司 | 用于检测半导体芯片产品脱袋的方法、装置和系统 |
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JP2010125521A (ja) * | 2008-12-01 | 2010-06-10 | Disco Abrasive Syst Ltd | レーザ加工装置 |
JP2012038827A (ja) * | 2010-08-05 | 2012-02-23 | Maxell Sliontec Ltd | 半導体ウェハ保持保護用粘着フィルム |
JP2013199623A (ja) * | 2012-03-26 | 2013-10-03 | Furukawa Electric Co Ltd:The | 半導体ウエハ表面保護用粘着テープ |
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2015
- 2015-08-03 JP JP2015153425A patent/JP6560052B2/ja active Active
-
2016
- 2016-07-05 TW TW105121234A patent/TWI693649B/zh active
- 2016-07-26 US US15/219,737 patent/US9859143B2/en active Active
- 2016-07-28 KR KR1020160095921A patent/KR102413288B1/ko active IP Right Grant
- 2016-08-01 CN CN201610620260.8A patent/CN106409710B/zh active Active
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JPH112510A (ja) * | 1997-06-11 | 1999-01-06 | Disco Abrasive Syst Ltd | 切削溝深さの検出方法 |
JP2006032399A (ja) * | 2004-07-12 | 2006-02-02 | Nippon Steel Chem Co Ltd | 半導体チップの実装方法 |
JP2007017522A (ja) * | 2005-07-05 | 2007-01-25 | Lintec Corp | 平面型光導波路作製用樹脂シート |
WO2009078231A1 (ja) * | 2007-12-19 | 2009-06-25 | Tokyo Seimitsu Co., Ltd. | レーザーダイシング装置及びダイシング方法 |
JP2009290148A (ja) * | 2008-06-02 | 2009-12-10 | Disco Abrasive Syst Ltd | ウエーハの分割方法 |
JP2010125521A (ja) * | 2008-12-01 | 2010-06-10 | Disco Abrasive Syst Ltd | レーザ加工装置 |
JP2012038827A (ja) * | 2010-08-05 | 2012-02-23 | Maxell Sliontec Ltd | 半導体ウェハ保持保護用粘着フィルム |
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Also Published As
Publication number | Publication date |
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US20170040201A1 (en) | 2017-02-09 |
TW201707101A (zh) | 2017-02-16 |
JP6560052B2 (ja) | 2019-08-14 |
CN106409710A (zh) | 2017-02-15 |
KR20170016287A (ko) | 2017-02-13 |
TWI693649B (zh) | 2020-05-11 |
CN106409710B (zh) | 2021-11-23 |
KR102413288B1 (ko) | 2022-06-27 |
US9859143B2 (en) | 2018-01-02 |
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