JP2017025395A - 封止膜形成装置および封止膜形成方法 - Google Patents
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Abstract
【解決手段】基材Wを収容する第1の減圧チャンバー4と、第1の減圧チャンバー4内に収容された基材Wへウェットプロセスによりカバー膜材料を供給し、カバー膜93を形成するカバー膜形成部2と、基材Wを収容する第2の減圧チャンバー5と、第1の減圧チャンバー4から第2の減圧チャンバー5への基材Wの搬送経路であり、減圧される減圧搬送路6と、第2の減圧チャンバー5内に収容された基材Wに形成されているカバー膜93へドライプロセスにより封止膜材料を供給し、封止膜90を形成する封止膜形成部3と、を備える。
【選択図】図1
Description
2 カバー膜形成部
3 封止膜形成部
4 第1の減圧チャンバー
5 第2の減圧チャンバー
6 減圧搬送路
21 ノズル
22 シリンジ
23 電源
24 ステージ
31 成膜チャンバー
32 電極ユニット
33 プラズマガス供給源
34 原料ガス供給源
35 高周波電源
36 ステージ
37 メッシュ
41 真空ポンプ
42 シャッター
43 シャッター
51 真空ポンプ
52 シャッター
53 シャッター
61 隔壁
62 真空ポンプ
63 搬送装置
64 ハンド
90 封止膜
91 異物
92 部位
93 カバー膜
94 異物
W 基材
Claims (5)
- 基材を収容する第1の減圧チャンバーと、
前記第1の減圧チャンバー内に収容された基材へウェットプロセスによりカバー膜材料を供給し、カバー膜を形成するカバー膜形成部と、
基材を収容する第2の減圧チャンバーと、
前記第1の減圧チャンバーから前記第2の減圧チャンバーへの基材の搬送経路であり、減圧される減圧搬送路と、
前記第2の減圧チャンバー内に収容された基材に形成されている前記カバー膜へドライプロセスにより封止膜材料を供給し、封止膜を形成する封止膜形成部と、
を備えることを特徴とする、封止膜形成装置。 - 前記カバー膜材料は、無溶剤系の液体であることを特徴とする、請求項1に記載の保護膜形成装置。
- 前記カバー膜材料は、加熱硬化型または紫外線硬化型もしくは吸水硬化型の液体であることを特徴とする、請求項1または2のいずれかに記載の保護膜形成装置。
- 前記カバー膜形成部はエレクトロスプレー装置であり、前記カバー膜材料供給時の前記第1の減圧チャンバー内の圧力は0.2Pa以下であることを特徴とする、請求項1から3のいずれかに記載の保護膜形成装置。
- 第1の減圧チャンバー内に収容された基材へ減圧環境下でウェットプロセスによりカバー膜材料を供給し、カバー膜を形成するカバー膜形成工程と、
減圧環境下で基材を前記第1の減圧チャンバーから第2の減圧チャンバーへ搬送する減圧搬送工程と、
前記第2の減圧チャンバー内に収容された基材に形成されている前記カバー膜へ減圧環境下でドライプロセスにより封止膜材料を供給し、封止膜を形成する封止膜形成工程と、
を有することを特徴とする、封止膜形成方法。
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JP2015147965A JP6560923B2 (ja) | 2015-07-27 | 2015-07-27 | 封止膜形成装置および封止膜形成方法 |
KR1020187003216A KR20180035826A (ko) | 2015-07-27 | 2016-07-19 | 봉지막 형성 장치 및 봉지막 형성 방법 |
CN201680043453.XA CN107849693B (zh) | 2015-07-27 | 2016-07-19 | 密封膜形成装置和密封膜形成方法 |
PCT/JP2016/071098 WO2017018265A1 (ja) | 2015-07-27 | 2016-07-19 | 封止膜形成装置および封止膜形成方法 |
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JP2015147965A JP6560923B2 (ja) | 2015-07-27 | 2015-07-27 | 封止膜形成装置および封止膜形成方法 |
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JP6560923B2 JP6560923B2 (ja) | 2019-08-14 |
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WO2020085937A1 (ru) * | 2018-10-24 | 2020-04-30 | Общество С Ограниченной Ответственностью "Онкобокс" | Тест-система для предсказания результативности лечения онкобольных препаратом бевацизумаб (авастин) |
CN114438475B (zh) * | 2022-01-27 | 2023-04-07 | 等离子体装备科技(广州)有限公司 | 密封件镀膜方法及密封件制备方法 |
Citations (8)
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JP2001102170A (ja) * | 1999-07-23 | 2001-04-13 | Semiconductor Energy Lab Co Ltd | El表示装置の作製方法及び薄膜形成装置 |
JP2001223077A (ja) * | 1999-11-29 | 2001-08-17 | Semiconductor Energy Lab Co Ltd | 成膜装置及びそれを用いた発光装置の作製方法 |
JP2004217970A (ja) * | 2003-01-10 | 2004-08-05 | Semiconductor Energy Lab Co Ltd | 製造装置、クリーニング方法、および再利用方法 |
JP2005322436A (ja) * | 2004-05-06 | 2005-11-17 | Seiko Epson Corp | 有機el素子の製造方法及び装置、並びに有機el素子 |
JP2008071726A (ja) * | 2006-09-15 | 2008-03-27 | Hirano Tecseed Co Ltd | 有機elシート製造装置 |
WO2008102694A1 (ja) * | 2007-02-21 | 2008-08-28 | Ulvac, Inc. | 表示装置、表示装置用の製造装置、及び表示装置の製造方法 |
JP2010274562A (ja) * | 2009-05-29 | 2010-12-09 | Fujifilm Corp | ガスバリア積層体およびガスバリア積層体の製造方法 |
JP2014214367A (ja) * | 2013-04-26 | 2014-11-17 | コニカミノルタ株式会社 | プラズマcvd成膜用マスク、プラズマcvd成膜方法、及び有機エレクトロルミネッセンス素子 |
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JP2005166400A (ja) * | 2003-12-02 | 2005-06-23 | Samco Inc | 表面保護膜 |
CN102090142B (zh) * | 2009-09-29 | 2013-08-28 | 夏普株式会社 | 有机el器件 |
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- 2015-07-27 JP JP2015147965A patent/JP6560923B2/ja active Active
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2016
- 2016-07-19 CN CN201680043453.XA patent/CN107849693B/zh not_active Expired - Fee Related
- 2016-07-19 WO PCT/JP2016/071098 patent/WO2017018265A1/ja active Application Filing
- 2016-07-19 KR KR1020187003216A patent/KR20180035826A/ko not_active Application Discontinuation
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001102170A (ja) * | 1999-07-23 | 2001-04-13 | Semiconductor Energy Lab Co Ltd | El表示装置の作製方法及び薄膜形成装置 |
JP2001223077A (ja) * | 1999-11-29 | 2001-08-17 | Semiconductor Energy Lab Co Ltd | 成膜装置及びそれを用いた発光装置の作製方法 |
JP2004217970A (ja) * | 2003-01-10 | 2004-08-05 | Semiconductor Energy Lab Co Ltd | 製造装置、クリーニング方法、および再利用方法 |
JP2005322436A (ja) * | 2004-05-06 | 2005-11-17 | Seiko Epson Corp | 有機el素子の製造方法及び装置、並びに有機el素子 |
JP2008071726A (ja) * | 2006-09-15 | 2008-03-27 | Hirano Tecseed Co Ltd | 有機elシート製造装置 |
WO2008102694A1 (ja) * | 2007-02-21 | 2008-08-28 | Ulvac, Inc. | 表示装置、表示装置用の製造装置、及び表示装置の製造方法 |
JP2010274562A (ja) * | 2009-05-29 | 2010-12-09 | Fujifilm Corp | ガスバリア積層体およびガスバリア積層体の製造方法 |
JP2014214367A (ja) * | 2013-04-26 | 2014-11-17 | コニカミノルタ株式会社 | プラズマcvd成膜用マスク、プラズマcvd成膜方法、及び有機エレクトロルミネッセンス素子 |
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WO2017018265A1 (ja) | 2017-02-02 |
KR20180035826A (ko) | 2018-04-06 |
CN107849693A (zh) | 2018-03-27 |
CN107849693B (zh) | 2020-07-24 |
JP6560923B2 (ja) | 2019-08-14 |
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