JP5212356B2 - 透明導電膜を有するロール状樹脂フィルムの製造方法及びこれを用いる有機エレクトロルミネッセンス素子 - Google Patents
透明導電膜を有するロール状樹脂フィルムの製造方法及びこれを用いる有機エレクトロルミネッセンス素子 Download PDFInfo
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- JP5212356B2 JP5212356B2 JP2009500245A JP2009500245A JP5212356B2 JP 5212356 B2 JP5212356 B2 JP 5212356B2 JP 2009500245 A JP2009500245 A JP 2009500245A JP 2009500245 A JP2009500245 A JP 2009500245A JP 5212356 B2 JP5212356 B2 JP 5212356B2
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- 229910052712 strontium Inorganic materials 0.000 description 1
- 125000003011 styrenyl group Chemical class [H]\C(*)=C(/[H])C1=C([H])C([H])=C([H])C([H])=C1[H] 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- KEBMUYGRNKVZOX-UHFFFAOYSA-N tetra(propan-2-yl)silane Chemical compound CC(C)[Si](C(C)C)(C(C)C)C(C)C KEBMUYGRNKVZOX-UHFFFAOYSA-N 0.000 description 1
- UQMOLLPKNHFRAC-UHFFFAOYSA-N tetrabutyl silicate Chemical compound CCCCO[Si](OCCCC)(OCCCC)OCCCC UQMOLLPKNHFRAC-UHFFFAOYSA-N 0.000 description 1
- REWDXIKKFOQRID-UHFFFAOYSA-N tetrabutylsilane Chemical compound CCCC[Si](CCCC)(CCCC)CCCC REWDXIKKFOQRID-UHFFFAOYSA-N 0.000 description 1
- VCZQFJFZMMALHB-UHFFFAOYSA-N tetraethylsilane Chemical compound CC[Si](CC)(CC)CC VCZQFJFZMMALHB-UHFFFAOYSA-N 0.000 description 1
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 description 1
- ZUEKXCXHTXJYAR-UHFFFAOYSA-N tetrapropan-2-yl silicate Chemical compound CC(C)O[Si](OC(C)C)(OC(C)C)OC(C)C ZUEKXCXHTXJYAR-UHFFFAOYSA-N 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 125000003396 thiol group Chemical group [H]S* 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- DENFJSAFJTVPJR-UHFFFAOYSA-N triethoxy(ethyl)silane Chemical compound CCO[Si](CC)(OCC)OCC DENFJSAFJTVPJR-UHFFFAOYSA-N 0.000 description 1
- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
- C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/10—Transparent electrodes, e.g. using graphene
- H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
- H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
Landscapes
- Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Manufacturing Of Electric Cables (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- Electroluminescent Light Sources (AREA)
- Laminated Bodies (AREA)
Description
200 圧力調整部
300 透明導電膜成膜工程
400 ロール巻き取り装置
F 樹脂フィルム
次に、本発明に係わる実施の形態について、その一例を以下、図に基づいて説明する。まず、ロールツーロールによるロール状樹脂フィルムの具体的な製造プロセスについて以下に説明する。図1は、透明導電膜を有するロール状樹脂フィルムの製造プロセスのブロック図である。
(ガス条件)
放電ガス:窒素ガス 94.99体積%
薄膜形成ガス:テトラエトキシシラン 0.01体積%
添加ガス:酸素ガス 5.0体積%
(電極条件)
第一電極側 電源種類 ハイデン研究所 100kHz(連続モード) PHF−6k
周波数 100kHz
出力密度 10W/cm2(この時の電圧Vpは7kVであった)
電極温度 120℃
第二電極側 電源種類 パール工業 13.56MHz CF−5000−13M
周波数 13.56MHz
出力密度 10W/cm2(この時の電圧Vpは2kVであった)
電極温度 90℃
の条件で、また、透明導電膜成膜工程における成膜は以下に従い行った。
Claims (6)
- 透明導電膜を有するロール状樹脂フィルムの製造方法において、少なくとも大気圧もしくはその近傍の圧力環境下にてバリア膜を成膜し、その後、圧力調整部を介して真空環境下にて透明導電膜を、樹脂フィルム基材上に、ロールツーロールにて連続して成膜することを特徴とする透明導電膜を有するロール状樹脂フィルムの製造方法。
- 前記圧力調整部が、複数の緩衝チャンバーからなることを特徴とする請求の範囲第1項に記載の透明導電膜を有するロール状樹脂フィルムの製造方法。
- 前記バリア膜を、大気圧もしくはその近傍の圧力環境下において、放電空間に薄膜形成ガスおよび放電ガスを含有するガスを供給し、前記放電空間に高周波電界を印加することにより前記ガスを励起し、励起した前記ガスに樹脂フィルムを晒すことにより、樹脂フィルム基材上に成膜することを特徴とする請求の範囲第1項または第2項に記載の透明導電膜を有するロール状樹脂フィルムの製造方法。
- 前記透明導電膜を、イオンプレーティング法で成膜することを特徴とする請求の範囲第1項〜第3項のいずれか1項に記載の透明導電膜を有するロール状樹脂フィルムの製造方法。
- 前記透明導電膜を、スパッタ法で成膜することを特徴とする請求の範囲第1項〜第3項のいずれか1項に記載の透明導電膜を有するロール状樹脂フィルムの製造方法。
- 請求の範囲第1項〜第5項のいずれか1項に記載の透明導電膜を有するロール状樹脂フィルムの製造方法により作製された樹脂フィルム基材上に設けられたことを特徴とする有機エレクトロルミネッセンス素子。
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JP2009500245A JP5212356B2 (ja) | 2007-02-23 | 2008-02-22 | 透明導電膜を有するロール状樹脂フィルムの製造方法及びこれを用いる有機エレクトロルミネッセンス素子 |
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JP2007043540 | 2007-02-23 | ||
JP2007043540 | 2007-02-23 | ||
PCT/JP2008/053048 WO2008102868A1 (ja) | 2007-02-23 | 2008-02-22 | 透明導電膜を有するロール状樹脂フィルムの製造方法及びこれを用いる有機エレクトロルミネッセンス素子 |
JP2009500245A JP5212356B2 (ja) | 2007-02-23 | 2008-02-22 | 透明導電膜を有するロール状樹脂フィルムの製造方法及びこれを用いる有機エレクトロルミネッセンス素子 |
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WO (1) | WO2008102868A1 (ja) |
Families Citing this family (6)
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JP4968268B2 (ja) * | 2009-01-19 | 2012-07-04 | コニカミノルタホールディングス株式会社 | 有機エレクトロルミネッセンス素子の製造方法 |
JP5326847B2 (ja) * | 2009-06-17 | 2013-10-30 | 大日本印刷株式会社 | 耐プラズマ性を有する透明フィルム及びそれを使用した透明ガスバリア性フィルム |
JP2011192567A (ja) * | 2010-03-16 | 2011-09-29 | Rohm Co Ltd | 有機el装置 |
WO2012005290A1 (ja) * | 2010-07-06 | 2012-01-12 | 日東電工株式会社 | 透明導電性フィルムの製造方法 |
WO2012005300A1 (ja) * | 2010-07-06 | 2012-01-12 | 日東電工株式会社 | 透明導電性フィルムおよびその製造方法 |
JP2015063317A (ja) * | 2013-09-24 | 2015-04-09 | キリン株式会社 | ガスバリア性プラスチックキャップの製造方法 |
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JPH06122973A (ja) * | 1992-10-08 | 1994-05-06 | Matsushita Electric Ind Co Ltd | 透明電極薄膜形成方法 |
JPH0778526A (ja) * | 1993-09-08 | 1995-03-20 | Nippon Sheet Glass Co Ltd | インライン型スパッタ装置 |
JPH09314729A (ja) * | 1996-05-24 | 1997-12-09 | Toyobo Co Ltd | 透明導電性フィルムおよびその製造法 |
JP2000238177A (ja) * | 1999-02-23 | 2000-09-05 | Teijin Ltd | ガスバリア性フィルム及びそれを用いた透明導電積層体 |
JP2006175633A (ja) * | 2004-12-21 | 2006-07-06 | Konica Minolta Holdings Inc | ガスバリア性薄膜積層体、及びガスバリア性樹脂基材、及び有機elデバイス |
WO2006087941A1 (ja) * | 2005-02-17 | 2006-08-24 | Konica Minolta Holdings, Inc. | ガスバリアフィルム、ガスバリアフィルムの製造方法および該ガスバリアフィルムを用いた有機エレクトロルミネッセンス素子用樹脂基材、有機エレクトロルミネッセンス素子 |
JP2006289821A (ja) * | 2005-04-12 | 2006-10-26 | Fuji Photo Film Co Ltd | ガスバリア性フィルム、基材フィルムおよび有機エレクトロルミネッセンス素子 |
JP2006321127A (ja) * | 2005-05-19 | 2006-11-30 | Konica Minolta Holdings Inc | バリアフィルム、及び有機エレクトロルミネッセンスデバイス |
JP2007023304A (ja) * | 2005-07-12 | 2007-02-01 | Konica Minolta Holdings Inc | 透明導電膜付ガスバリア性フィルムの製造方法及び有機エレクトロルミネッセンス素子の製造方法 |
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2008
- 2008-02-22 JP JP2009500245A patent/JP5212356B2/ja not_active Expired - Fee Related
- 2008-02-22 WO PCT/JP2008/053048 patent/WO2008102868A1/ja active Application Filing
Patent Citations (9)
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JPH06122973A (ja) * | 1992-10-08 | 1994-05-06 | Matsushita Electric Ind Co Ltd | 透明電極薄膜形成方法 |
JPH0778526A (ja) * | 1993-09-08 | 1995-03-20 | Nippon Sheet Glass Co Ltd | インライン型スパッタ装置 |
JPH09314729A (ja) * | 1996-05-24 | 1997-12-09 | Toyobo Co Ltd | 透明導電性フィルムおよびその製造法 |
JP2000238177A (ja) * | 1999-02-23 | 2000-09-05 | Teijin Ltd | ガスバリア性フィルム及びそれを用いた透明導電積層体 |
JP2006175633A (ja) * | 2004-12-21 | 2006-07-06 | Konica Minolta Holdings Inc | ガスバリア性薄膜積層体、及びガスバリア性樹脂基材、及び有機elデバイス |
WO2006087941A1 (ja) * | 2005-02-17 | 2006-08-24 | Konica Minolta Holdings, Inc. | ガスバリアフィルム、ガスバリアフィルムの製造方法および該ガスバリアフィルムを用いた有機エレクトロルミネッセンス素子用樹脂基材、有機エレクトロルミネッセンス素子 |
JP2006289821A (ja) * | 2005-04-12 | 2006-10-26 | Fuji Photo Film Co Ltd | ガスバリア性フィルム、基材フィルムおよび有機エレクトロルミネッセンス素子 |
JP2006321127A (ja) * | 2005-05-19 | 2006-11-30 | Konica Minolta Holdings Inc | バリアフィルム、及び有機エレクトロルミネッセンスデバイス |
JP2007023304A (ja) * | 2005-07-12 | 2007-02-01 | Konica Minolta Holdings Inc | 透明導電膜付ガスバリア性フィルムの製造方法及び有機エレクトロルミネッセンス素子の製造方法 |
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