JP2017004586A - 磁気抵抗センサ製造 - Google Patents
磁気抵抗センサ製造 Download PDFInfo
- Publication number
- JP2017004586A JP2017004586A JP2016075042A JP2016075042A JP2017004586A JP 2017004586 A JP2017004586 A JP 2017004586A JP 2016075042 A JP2016075042 A JP 2016075042A JP 2016075042 A JP2016075042 A JP 2016075042A JP 2017004586 A JP2017004586 A JP 2017004586A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- reader
- shield
- saf
- shield structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
- G11B5/3912—Arrangements in which the active read-out elements are transducing in association with active magnetic shields, e.g. magnetically coupled shields
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3967—Composite structural arrangements of transducers, e.g. inductive write and magnetoresistive read
- G11B5/397—Composite structural arrangements of transducers, e.g. inductive write and magnetoresistive read with a plurality of independent magnetoresistive active read-out elements for respectively transducing from selected components
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3967—Composite structural arrangements of transducers, e.g. inductive write and magnetoresistive read
- G11B5/397—Composite structural arrangements of transducers, e.g. inductive write and magnetoresistive read with a plurality of independent magnetoresistive active read-out elements for respectively transducing from selected components
- G11B5/3974—Composite structural arrangements of transducers, e.g. inductive write and magnetoresistive read with a plurality of independent magnetoresistive active read-out elements for respectively transducing from selected components from the same information track, e.g. frequency bands
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/398—Specially shaped layers
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Magnetic Heads (AREA)
- Hall/Mr Elements (AREA)
- Thin Magnetic Films (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/740,116 US20160365104A1 (en) | 2015-06-15 | 2015-06-15 | Magnetoresistive sensor fabrication |
| US14/740,116 | 2015-06-15 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2017004586A true JP2017004586A (ja) | 2017-01-05 |
| JP2017004586A5 JP2017004586A5 (enExample) | 2019-04-25 |
Family
ID=57516033
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016075042A Pending JP2017004586A (ja) | 2015-06-15 | 2016-04-04 | 磁気抵抗センサ製造 |
Country Status (2)
| Country | Link |
|---|---|
| US (2) | US20160365104A1 (enExample) |
| JP (1) | JP2017004586A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11453170B2 (en) | 2017-08-31 | 2022-09-27 | General Electric Company | Distribution of customized engineering models for additive manufacturing |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9431031B1 (en) * | 2015-03-24 | 2016-08-30 | Western Digital (Fremont), Llc | System and method for magnetic transducers having multiple sensors and AFC shields |
| US20160365104A1 (en) * | 2015-06-15 | 2016-12-15 | Seagate Technology Llc | Magnetoresistive sensor fabrication |
| EP3442042B1 (en) * | 2017-08-10 | 2020-12-09 | Commissariat à l'Energie Atomique et aux Energies Alternatives | Synthetic antiferromagnetic layer, magnetic tunnel junction and spintronic device using said synthetic antiferromagnetic layer |
| US10614838B2 (en) * | 2018-08-23 | 2020-04-07 | Seagate Technology Llc | Reader with side shields decoupled from a top shield |
| US11120933B1 (en) | 2019-03-29 | 2021-09-14 | Seagate Technology Llc | Stack cap with a non-magnetic layer including ferromagnetic elements |
| US10783907B1 (en) * | 2019-09-04 | 2020-09-22 | Seagate Technology Llc | Reader with bi-layered side shields |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002529926A (ja) * | 1998-11-09 | 2002-09-10 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 磁気トンネル接合センサを使用するサーマル・アスペリティ低減回路を有するディスク・ドライブ |
| JP2008288235A (ja) * | 2007-05-15 | 2008-11-27 | Tdk Corp | 磁気検出素子及びその製造方法 |
| JP2009272031A (ja) * | 2008-05-09 | 2009-11-19 | Headway Technologies Inc | 磁気再生記録ヘッドおよびその製造方法 |
| JP2009283499A (ja) * | 2008-05-19 | 2009-12-03 | Toshiba Corp | 磁気抵抗効果素子、磁気抵抗効果ヘッド、磁気記録再生装置および磁気メモリ |
| JP2009290225A (ja) * | 2009-07-24 | 2009-12-10 | Toshiba Corp | 磁気抵抗効果素子,および磁気抵抗効果素子の製造方法 |
| JP2013008439A (ja) * | 2011-06-23 | 2013-01-10 | Seagate Technology Llc | センサ積層体、シールド、および第1のシールド安定化構造を備える装置、センサ積層体、シールド、および磁性層を備える装置、データ記憶媒体、記録ヘッド、およびアームを備える装置、ならびに、センサ構造を設け、これをアニールするステップを備える方法 |
| US8873204B1 (en) * | 2014-07-25 | 2014-10-28 | HGST Netherlands B.V. | Current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor structure with multiple stacked sensors and center shield with CoFeB insertion layer |
| JP2015028832A (ja) * | 2013-07-30 | 2015-02-12 | シーゲイト テクノロジー エルエルシー | 磁気抵抗性センサシールド |
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| JPS59136444A (ja) * | 1983-01-24 | 1984-08-06 | Sony Corp | 非晶質磁性合金 |
| US6587315B1 (en) * | 1999-01-20 | 2003-07-01 | Alps Electric Co., Ltd. | Magnetoresistive-effect device with a magnetic coupling junction |
| JP2002076472A (ja) * | 2000-08-31 | 2002-03-15 | Alps Electric Co Ltd | スピンバルブ型薄膜磁気素子およびこのスピンバルブ型薄膜磁気素子を備えた薄膜磁気ヘッド |
| US6496335B2 (en) * | 2000-11-29 | 2002-12-17 | International Business Machines Corporation | Magnetic head shield structure having high magnetic stability |
| JP2004319060A (ja) * | 2003-03-28 | 2004-11-11 | Tdk Corp | 薄膜磁気ヘッドおよびその製造方法 |
| JP3974587B2 (ja) * | 2003-04-18 | 2007-09-12 | アルプス電気株式会社 | Cpp型巨大磁気抵抗効果ヘッド |
| JP2007200428A (ja) * | 2006-01-25 | 2007-08-09 | Hitachi Global Storage Technologies Netherlands Bv | 磁気抵抗効果型磁気ヘッド及びその製造方法 |
| US7684161B2 (en) | 2006-04-18 | 2010-03-23 | Everspin Technologies, Inc. | Methods and apparatus for a synthetic anti-ferromagnet structure with reduced temperature dependence |
| JP2008192222A (ja) * | 2007-02-02 | 2008-08-21 | Hitachi Global Storage Technologies Netherlands Bv | 磁気検出素子及びその製造方法 |
| US20100149689A1 (en) | 2008-12-11 | 2010-06-17 | Tdk Corporation | Thin film magnetic head having a pair of magnetic layers whose magnetization is controlled by shield layer including amorphous layer |
| US8310791B2 (en) * | 2009-03-13 | 2012-11-13 | Tdk Corporation | Magnetoresistive effect element and magnetic disk device |
| US8922956B2 (en) | 2010-06-04 | 2014-12-30 | Seagate Technology Llc | Tunneling magneto-resistive sensors with buffer layers |
| US9337417B2 (en) * | 2010-12-10 | 2016-05-10 | Avalanche Technology, Inc. | Magnetic random access memory with perpendicular interfacial anisotropy |
| US9070855B2 (en) * | 2010-12-10 | 2015-06-30 | Avalanche Technology, Inc. | Magnetic random access memory having perpendicular enhancement layer |
| US9396781B2 (en) * | 2010-12-10 | 2016-07-19 | Avalanche Technology, Inc. | Magnetic random access memory having perpendicular composite reference layer |
| WO2012082998A1 (en) | 2010-12-15 | 2012-06-21 | Seagate Technology Llc | Magnetic sensor seed layer with magnetic and nonmagnetic layers |
| US8822046B2 (en) * | 2012-04-30 | 2014-09-02 | Seagate Technology Llc | Stack with wide seed layer |
| US8797692B1 (en) | 2012-09-07 | 2014-08-05 | Western Digital (Fremont), Llc | Magnetic recording sensor with AFM exchange coupled shield stabilization |
| US9183857B2 (en) * | 2012-11-01 | 2015-11-10 | Seagate Technology Llc | Magnetic devices having shields including a nickel alloy |
| US8531801B1 (en) | 2012-12-20 | 2013-09-10 | Western Digital (Fremont), Llc | Method and system for providing a read transducer having a composite magnetic shield with smooth interfaces |
| US8921126B2 (en) | 2013-01-25 | 2014-12-30 | Headway Technologies, Inc. | Magnetic seed method for improving blocking temperature and shield to shield spacing in a TMR sensor |
| US20140218821A1 (en) * | 2013-02-07 | 2014-08-07 | Seagate Technology Llc | Data reader with magnetic seed lamination |
| US8638530B1 (en) * | 2013-02-20 | 2014-01-28 | HGST Netherlands B.V. | Current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor having a top shield with an antiparallel structure |
| US9230577B2 (en) * | 2013-03-05 | 2016-01-05 | Headway Technologies, Inc. | Thin seeded antiferromagnetic coupled side shield for sensor biasing applications |
| US8780505B1 (en) * | 2013-03-12 | 2014-07-15 | Western Digital (Fremont), Llc | Method and system for providing a read transducer having an improved composite magnetic shield |
| US8743507B1 (en) | 2013-03-12 | 2014-06-03 | Seagate Technology Llc | Seed trilayer for magnetic element |
| US8867175B1 (en) * | 2013-05-08 | 2014-10-21 | Seagate Technology Llc | Magnetic shield base lamination |
| US8780506B1 (en) * | 2013-06-20 | 2014-07-15 | HGST Netherlands B.V. | Current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor with side shields and an antiparallel structure top shield |
| US9251816B2 (en) * | 2013-10-03 | 2016-02-02 | Seagate Technology Llc | Magnetic sensor shield pinned by a high-coercivity ferromagnet |
| US9087525B2 (en) * | 2013-10-30 | 2015-07-21 | Seagate Technology Llc | Layered synthetic anti-ferromagnetic upper shield |
| US9230575B2 (en) | 2013-12-13 | 2016-01-05 | Seagate Technology Llc | Magnetoresistive sensor with SAF structure having crystalline layer and amorphous layer |
| US9368136B2 (en) | 2014-02-27 | 2016-06-14 | Seagate Technology Llc | Magnetoresistive sensor having synthetic antiferromagnetic layer in top and bottom shields |
| US9230565B1 (en) | 2014-06-24 | 2016-01-05 | Western Digital (Fremont), Llc | Magnetic shield for magnetic recording head |
| US9454979B1 (en) * | 2014-11-14 | 2016-09-27 | Seagate Technology Llc | Sensor structure with multilayer top shield |
| US9929339B2 (en) * | 2015-01-01 | 2018-03-27 | Samsung Electronics Co., Ltd. | Method and system for providing magnetic junctions including self-initializing reference layers |
| US20160365104A1 (en) * | 2015-06-15 | 2016-12-15 | Seagate Technology Llc | Magnetoresistive sensor fabrication |
-
2015
- 2015-06-15 US US14/740,116 patent/US20160365104A1/en not_active Abandoned
-
2016
- 2016-04-04 JP JP2016075042A patent/JP2017004586A/ja active Pending
-
2017
- 2017-06-23 US US15/631,372 patent/US10090008B2/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002529926A (ja) * | 1998-11-09 | 2002-09-10 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 磁気トンネル接合センサを使用するサーマル・アスペリティ低減回路を有するディスク・ドライブ |
| JP2008288235A (ja) * | 2007-05-15 | 2008-11-27 | Tdk Corp | 磁気検出素子及びその製造方法 |
| JP2009272031A (ja) * | 2008-05-09 | 2009-11-19 | Headway Technologies Inc | 磁気再生記録ヘッドおよびその製造方法 |
| JP2009283499A (ja) * | 2008-05-19 | 2009-12-03 | Toshiba Corp | 磁気抵抗効果素子、磁気抵抗効果ヘッド、磁気記録再生装置および磁気メモリ |
| JP2009290225A (ja) * | 2009-07-24 | 2009-12-10 | Toshiba Corp | 磁気抵抗効果素子,および磁気抵抗効果素子の製造方法 |
| JP2013008439A (ja) * | 2011-06-23 | 2013-01-10 | Seagate Technology Llc | センサ積層体、シールド、および第1のシールド安定化構造を備える装置、センサ積層体、シールド、および磁性層を備える装置、データ記憶媒体、記録ヘッド、およびアームを備える装置、ならびに、センサ構造を設け、これをアニールするステップを備える方法 |
| JP2015028832A (ja) * | 2013-07-30 | 2015-02-12 | シーゲイト テクノロジー エルエルシー | 磁気抵抗性センサシールド |
| US8873204B1 (en) * | 2014-07-25 | 2014-10-28 | HGST Netherlands B.V. | Current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor structure with multiple stacked sensors and center shield with CoFeB insertion layer |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11453170B2 (en) | 2017-08-31 | 2022-09-27 | General Electric Company | Distribution of customized engineering models for additive manufacturing |
Also Published As
| Publication number | Publication date |
|---|---|
| US20170294199A1 (en) | 2017-10-12 |
| US10090008B2 (en) | 2018-10-02 |
| US20160365104A1 (en) | 2016-12-15 |
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