JP5798089B2 - センサ積層体、シールド、および第1のシールド安定化構造を備える装置、センサ積層体、シールド、および磁性層を備える装置、データ記憶媒体、記録ヘッド、およびアームを備える装置 - Google Patents
センサ積層体、シールド、および第1のシールド安定化構造を備える装置、センサ積層体、シールド、および磁性層を備える装置、データ記憶媒体、記録ヘッド、およびアームを備える装置 Download PDFInfo
- Publication number
- JP5798089B2 JP5798089B2 JP2012134721A JP2012134721A JP5798089B2 JP 5798089 B2 JP5798089 B2 JP 5798089B2 JP 2012134721 A JP2012134721 A JP 2012134721A JP 2012134721 A JP2012134721 A JP 2012134721A JP 5798089 B2 JP5798089 B2 JP 5798089B2
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- JP
- Japan
- Prior art keywords
- shield
- layer
- magnetic
- magnetic layer
- sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/10—Structure or manufacture of housings or shields for heads
- G11B5/11—Shielding of head against electric or magnetic fields
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
- G11B5/3912—Arrangements in which the active read-out elements are transducing in association with active magnetic shields, e.g. magnetically coupled shields
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/398—Specially shaped layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
Description
磁気データ記憶装置の記憶容量が増大するにつれ、記憶媒体中の磁気ビットサイズが小さくなっている。ビットサイズがより小さくなると、記録ヘッドの物理的寸法の低減が必要となる。
第1の局面で、開示は、センサ積層体と、センサ積層体の対向する側に位置決めされる第1および第2のシールドと、第1のシールドに隣接し、バイアス磁界を第1のシールドに印加する第1のシールド安定化構造とを含む装置を提供する。
1つの局面では、この開示は、磁気シールド同士の間に読出センサを含む装置であって、印加される磁気バイアスでシールドが安定化される装置を提供する。この構成は読出センサ積層体に対する磁気擾乱を低減することができる。
Claims (14)
- 装置であって、
センサ積層体と、
前記センサ積層体の対向する側に位置決めされる第1および第2のシールドと、
前記第1のシールドに隣接し、前記第1のシールドにバイアス磁界を印加する第1のシールド安定化構造と、
前記第1のシールド安定化構造と前記センサ積層体との間に設けられた第1の非磁性層とを備え、前記第1の非磁性層は前記第1のシールド安定化構造と前記センサ積層体との間の交換結合を低減する、装置。 - 前記第1のシールド安定化構造は第1の磁性層に隣接する第1の反強磁性層を備える、請求項1に記載の装置。
- 第2の非磁性層によって前記第1の磁性層から分離されて第1の合成反強磁性構造を形成する第2の磁性層をさらに備える、請求項2に記載の装置。
- 前記第1の磁性層と前記第2の磁性層との間で磁気モーメントのバランスをとる、請求項3に記載の装置。
- 前記第2のシールドに隣接し、前記第2のシールドにバイアス磁界を印加する第2のシールド安定化構造をさらに備える、請求項1〜4のいずれか1項に記載の装置。
- 前記第2のシールド安定化構造は第3の磁性層に隣接する第2の反強磁性層を備える、請求項5に記載の装置。
- 第3の非磁性層によって前記第3の磁性層から分離されて第2の合成反強磁性構造を形成する第4の磁性層をさらに備える、請求項6に記載の装置。
- 前記第1のシールド安定化構造は前記第1のシールドの一部に隣接して位置決めされる、請求項1〜7のいずれか1項に記載の装置。
- 前記第1のシールド安定化構造の幅および奥行きは前記センサ積層体の幅および奥行き以上である、請求項1〜8のいずれか1項に記載の装置。
- 前記第1のシールド安定化構造の前記幅は前記第1のシールド安定化構造の前記奥行きよりも大きい、請求項9に記載の装置。
- 装置であって、
センサ積層体と、
前記センサ積層体の対向する側に位置決めされる第1および第2のシールドと、
前記第1のシールドに隣接し、前記第1のシールドにバイアス磁界を印加する第1のシールド安定化構造とを備え、前記第1のシールド安定化構造は、第1の磁性層と第2の磁性層と第3の磁性層と第4の磁性層と第1の非磁性層とを有し、前記第1の非磁性層はバランスされた磁気モーメントを有する第1および第2の積層構造に接し、前記第1の積層構造は前記第1の磁性層と前記第2の磁性層とを有し、前記第1の磁性層は前記第2の磁性層と異なる材料から構成され、前記第2の積層構造は前記第3の磁性層と前記第4の磁性層とを有し、前記第3の磁性層は前記第4の磁性層と異なる材料から構成される、装置。 - 前記第1のシールド安定化構造は前記第1の磁性層に隣接する第1の反強磁性体をさらに備える、請求項11に記載の装置。
- 前記第1および第2の積層構造ならびに前記第1の非磁性層は第1の合成反強磁性構造を形成する、請求項11または12に記載の装置。
- 装置であって、
データ記憶媒体と、
請求項1〜13のいずれか1項に記載の装置を有する記録ヘッドと、
前記データ記憶媒体に隣接して前記記録ヘッドを位置決めするためのアームとを備える、装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/167,142 | 2011-06-23 | ||
US13/167,142 US20120327537A1 (en) | 2011-06-23 | 2011-06-23 | Shield Stabilization Configuration With Applied Bias |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2013008439A JP2013008439A (ja) | 2013-01-10 |
JP2013008439A5 JP2013008439A5 (ja) | 2013-05-02 |
JP5798089B2 true JP5798089B2 (ja) | 2015-10-21 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2012134721A Expired - Fee Related JP5798089B2 (ja) | 2011-06-23 | 2012-06-14 | センサ積層体、シールド、および第1のシールド安定化構造を備える装置、センサ積層体、シールド、および磁性層を備える装置、データ記憶媒体、記録ヘッド、およびアームを備える装置 |
Country Status (3)
Country | Link |
---|---|
US (2) | US20120327537A1 (ja) |
JP (1) | JP5798089B2 (ja) |
MY (1) | MY156154A (ja) |
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2011
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-
2012
- 2012-06-14 JP JP2012134721A patent/JP5798089B2/ja not_active Expired - Fee Related
- 2012-06-22 MY MYPI2012002881A patent/MY156154A/en unknown
-
2013
- 2013-12-17 US US14/109,184 patent/US9001472B2/en active Active
Also Published As
Publication number | Publication date |
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US20140104729A1 (en) | 2014-04-17 |
US20120327537A1 (en) | 2012-12-27 |
US9001472B2 (en) | 2015-04-07 |
JP2013008439A (ja) | 2013-01-10 |
MY156154A (en) | 2016-01-15 |
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