JP2016535457A - イオン注入によってドーピングし、外方拡散バリアを堆積することを含む太陽電池の製造方法 - Google Patents

イオン注入によってドーピングし、外方拡散バリアを堆積することを含む太陽電池の製造方法 Download PDF

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JP2016535457A
JP2016535457A JP2016541855A JP2016541855A JP2016535457A JP 2016535457 A JP2016535457 A JP 2016535457A JP 2016541855 A JP2016541855 A JP 2016541855A JP 2016541855 A JP2016541855 A JP 2016541855A JP 2016535457 A JP2016535457 A JP 2016535457A
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layer
cover layer
dopant
solar cell
doping
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Japanese (ja)
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ベースケ、ティム
カニア、ダニエル
シェルホルン、クラウス
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Ion Beam Services SA
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Ion Beam Services SA
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
    • H01L31/0288—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1864—Annealing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Sustainable Energy (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
JP2016541855A 2013-09-13 2014-08-05 イオン注入によってドーピングし、外方拡散バリアを堆積することを含む太陽電池の製造方法 Pending JP2016535457A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102013218351.8 2013-09-13
DE102013218351.8A DE102013218351A1 (de) 2013-09-13 2013-09-13 Verfahren zur Herstellung einer Solarzelle
PCT/EP2014/066856 WO2015036181A1 (de) 2013-09-13 2014-08-05 Verfahren zur herstellung einer solarzelle umfassend eine dotierung durch ionenimplantation und abscheiden einer ausdiffusionsbarriere

Publications (1)

Publication Number Publication Date
JP2016535457A true JP2016535457A (ja) 2016-11-10

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JP2016541855A Pending JP2016535457A (ja) 2013-09-13 2014-08-05 イオン注入によってドーピングし、外方拡散バリアを堆積することを含む太陽電池の製造方法

Country Status (8)

Country Link
US (1) US10263135B2 (de)
EP (1) EP3044813A1 (de)
JP (1) JP2016535457A (de)
KR (1) KR20160071373A (de)
CN (1) CN106104755A (de)
DE (1) DE102013218351A1 (de)
MY (1) MY173528A (de)
WO (1) WO2015036181A1 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111640804A (zh) * 2020-06-01 2020-09-08 国家电投集团西安太阳能电力有限公司 一种氧化硅/氮化硅叠层膜的n-pert双面电池结构

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KR101680036B1 (ko) * 2015-07-07 2016-12-12 엘지전자 주식회사 태양 전지 및 이의 제조 방법
WO2017072758A1 (en) 2015-10-25 2017-05-04 Solaround Ltd. Method of bifacial cell fabrication
DE102016125316B4 (de) * 2016-12-22 2021-07-22 Infineon Technologies Austria Ag Herstellen von rekombinationszentren in einem halbleiterbauelement
CN107425086A (zh) * 2017-05-18 2017-12-01 阳光中科（福建）能源股份有限公司 一种离子注入法制作n型pert双面太阳电池的制备工艺
DE102019104249A1 (de) * 2019-02-20 2020-08-20 Hanwha Q Cells Gmbh Verfahren zur Herstellung einer PERC-Solarzelle und PERC-Solarzelle

Citations (11)

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JPS5363993A (en) * 1976-11-19 1978-06-07 Matsushita Electric Ind Co Ltd Production of semiconductor device
JP2003152205A (ja) * 2001-11-12 2003-05-23 Sharp Corp 光電変換素子及びその製造方法
JP2005223080A (ja) * 2004-02-04 2005-08-18 Sharp Corp 太陽電池の製造方法
WO2005076960A2 (en) * 2004-02-05 2005-08-25 Advent Solar, Inc. Back-contact solar cells and methods for fabrication
JP2006066765A (ja) * 2004-08-30 2006-03-09 Sharp Corp 多接合型化合物太陽電池およびその製造方法
JP2006310389A (ja) * 2005-04-26 2006-11-09 Sharp Corp 太陽電池の製造方法
JP2012199517A (ja) * 2011-02-03 2012-10-18 Imec 太陽電池の製造方法
US20130171767A1 (en) * 2009-05-05 2013-07-04 Solexel, Inc. Ion implantation and annealing for high efficiency back-contact back-junction solar cells
JP2013165160A (ja) * 2012-02-10 2013-08-22 Shin Etsu Chem Co Ltd 太陽電池の製造方法及び太陽電池
US20130224938A1 (en) * 2012-02-24 2013-08-29 Varian Semiconductor Equipment Associates, Inc. Passivation layer for workpieces formed from a polymer
US20140261666A1 (en) * 2013-03-13 2014-09-18 Applied Materials, Inc. Methods of manufacturing a low cost solar cell device

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JP2004193350A (ja) * 2002-12-11 2004-07-08 Sharp Corp 太陽電池セルおよびその製造方法
US20050172996A1 (en) * 2004-02-05 2005-08-11 Advent Solar, Inc. Contact fabrication of emitter wrap-through back contact silicon solar cells
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DE102010003784A1 (de) * 2010-04-09 2011-10-13 Robert Bosch Gmbh Verfahren zur Herstellung einer Solarzelle
EP2805334A4 (de) 2012-01-16 2015-10-28 Heraeus Precious Metals North America Conshohocken Llc Aluminiumleitpaste für rückseitenoberflächenpassivierte zellen mit lokal geöffneten durchkontaktierungen
KR101872786B1 (ko) * 2012-06-22 2018-06-29 엘지전자 주식회사 태양 전지의 불순물층 형성 방법 및 태양 전지의 제조 방법
CN102856436A (zh) * 2012-09-05 2013-01-02 友达光电股份有限公司 太阳能电池及其制作方法
DE102012217078B4 (de) * 2012-09-21 2015-03-05 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum Herstellen einer photovoltaischen Solarzelle
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5363993A (en) * 1976-11-19 1978-06-07 Matsushita Electric Ind Co Ltd Production of semiconductor device
JP2003152205A (ja) * 2001-11-12 2003-05-23 Sharp Corp 光電変換素子及びその製造方法
JP2005223080A (ja) * 2004-02-04 2005-08-18 Sharp Corp 太陽電池の製造方法
WO2005076960A2 (en) * 2004-02-05 2005-08-25 Advent Solar, Inc. Back-contact solar cells and methods for fabrication
JP2006066765A (ja) * 2004-08-30 2006-03-09 Sharp Corp 多接合型化合物太陽電池およびその製造方法
JP2006310389A (ja) * 2005-04-26 2006-11-09 Sharp Corp 太陽電池の製造方法
US20130171767A1 (en) * 2009-05-05 2013-07-04 Solexel, Inc. Ion implantation and annealing for high efficiency back-contact back-junction solar cells
JP2012199517A (ja) * 2011-02-03 2012-10-18 Imec 太陽電池の製造方法
JP2013165160A (ja) * 2012-02-10 2013-08-22 Shin Etsu Chem Co Ltd 太陽電池の製造方法及び太陽電池
US20130224938A1 (en) * 2012-02-24 2013-08-29 Varian Semiconductor Equipment Associates, Inc. Passivation layer for workpieces formed from a polymer
US20140261666A1 (en) * 2013-03-13 2014-09-18 Applied Materials, Inc. Methods of manufacturing a low cost solar cell device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111640804A (zh) * 2020-06-01 2020-09-08 国家电投集团西安太阳能电力有限公司 一种氧化硅/氮化硅叠层膜的n-pert双面电池结构

Also Published As

Publication number Publication date
MY173528A (en) 2020-01-31
DE102013218351A1 (de) 2015-03-19
CN106104755A (zh) 2016-11-09
KR20160071373A (ko) 2016-06-21
WO2015036181A1 (de) 2015-03-19
US20160233372A1 (en) 2016-08-11
EP3044813A1 (de) 2016-07-20
US10263135B2 (en) 2019-04-16

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