JP2016535428A - 低ノイズＩｎＧａＡｓフォトダイオードアレイ - Google Patents

低ノイズＩｎＧａＡｓフォトダイオードアレイ Download PDF

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Publication number
JP2016535428A
JP2016535428A JP2016516518A JP2016516518A JP2016535428A JP 2016535428 A JP2016535428 A JP 2016535428A JP 2016516518 A JP2016516518 A JP 2016516518A JP 2016516518 A JP2016516518 A JP 2016516518A JP 2016535428 A JP2016535428 A JP 2016535428A
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jfet
photodiode
type
charge
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Japanese (ja)
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JP2016535428A5 (enExample
Inventor
マーティン エイチ． エッテンバーグ
マーティン エイチ． エッテンバーグ
Original Assignee
プリンストン インフラレッド テクノロジーズ インコーポレイテッド
プリンストン インフラレッド テクノロジーズ インコーポレイテッド
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Publication of JP2016535428A publication Critical patent/JP2016535428A/ja
Publication of JP2016535428A5 publication Critical patent/JP2016535428A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/196—Junction field effect transistor [JFET] image sensors; Static induction transistor [SIT] image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/051—Manufacture or treatment of FETs having PN junction gates
    • H10D30/0512—Manufacture or treatment of FETs having PN junction gates of FETs having PN homojunction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/021—Manufacture or treatment of image sensors covered by group H10F39/12 of image sensors having active layers comprising only Group III-V materials, e.g. GaAs, AlGaAs or InP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184—Infrared image sensors
    • H10F39/1843—Infrared image sensors of the hybrid type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184—Infrared image sensors
    • H10F39/1847—Multispectral infrared image sensors having a stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8033—Photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
    • H10F71/1272—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising at least three elements, e.g. GaAlAs or InGaAsP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H10F77/1248—Active materials comprising only Group III-V materials, e.g. GaAs having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2016516518A 2013-09-25 2014-09-25 低ノイズＩｎＧａＡｓフォトダイオードアレイ Pending JP2016535428A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361882385P 2013-09-25 2013-09-25
US61/882,385 2013-09-25
PCT/US2014/057481 WO2015048304A2 (en) 2013-09-25 2014-09-25 LOW NOISE InGaAs PHOTODIODE ARRAY

Publications (2)

Publication Number Publication Date
JP2016535428A true JP2016535428A (ja) 2016-11-10
JP2016535428A5 JP2016535428A5 (enExample) 2017-11-16

Family

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Family Applications (1)

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JP2016516518A Pending JP2016535428A (ja) 2013-09-25 2014-09-25 低ノイズＩｎＧａＡｓフォトダイオードアレイ

Country Status (5)

Country Link
US (2) US9935151B2 (enExample)
EP (1) EP3050128A4 (enExample)
JP (1) JP2016535428A (enExample)
IL (1) IL244745A0 (enExample)
WO (1) WO2015048304A2 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018212175A1 (ja) * 2017-05-15 2018-11-22 ソニーセミコンダクタソリューションズ株式会社 光電変換素子および撮像素子
US10304896B2 (en) 2017-08-28 2019-05-28 Samsung Electronics Co., Ltd. Infrared detector and infrared sensor including the same
JP2021089979A (ja) * 2019-12-04 2021-06-10 ソニーセミコンダクタソリューションズ株式会社 半導体素子および電子機器
JP2021125697A (ja) * 2020-02-07 2021-08-30 センサーズ・アンリミテッド・インコーポレーテッド 過電流保護によるｐｉｎダイオード

Families Citing this family (8)

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Publication number Priority date Publication date Assignee Title
JP2019533302A (ja) * 2016-08-31 2019-11-14 ジーレイ スイッツァーランド エスアー 接合インターフェースの電荷輸送で構成される電磁吸収放射線検出器
CN109449238A (zh) * 2018-10-10 2019-03-08 中国科学院上海技术物理研究所 一种大规模小像元铟镓砷焦平面探测器制备方法
US11121302B2 (en) 2018-10-11 2021-09-14 SeeQC, Inc. System and method for superconducting multi-chip module
WO2020123161A1 (en) * 2018-12-14 2020-06-18 Flir Commercial Systems, Inc. Superlattice-based detector systems and methods
WO2020202557A1 (ja) * 2019-04-05 2020-10-08 三菱電機株式会社 半導体受光素子及び半導体受光素子製造方法
CN110660878B (zh) * 2019-09-26 2021-09-03 中国电子科技集团公司第十一研究所 一种平面碲镉汞雪崩二极管探测器及其制备方法
CN114267693B (zh) * 2021-12-22 2025-01-28 上海韦尔半导体股份有限公司 一种图像传感器结构及其制作方法和工作时序
FR3144697A1 (fr) 2022-12-28 2024-07-05 Soitec Procédé de fabrication d’un capteur d’image

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Publication number Priority date Publication date Assignee Title
WO2018212175A1 (ja) * 2017-05-15 2018-11-22 ソニーセミコンダクタソリューションズ株式会社 光電変換素子および撮像素子
KR20200004291A (ko) * 2017-05-15 2020-01-13 소니 세미컨덕터 솔루션즈 가부시키가이샤 광전변환 소자 및 촬상 소자
JPWO2018212175A1 (ja) * 2017-05-15 2020-03-19 ソニーセミコンダクタソリューションズ株式会社 光電変換素子および撮像素子
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JP7014785B2 (ja) 2017-05-15 2022-02-01 ソニーセミコンダクタソリューションズ株式会社 光電変換素子および撮像素子
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US10304896B2 (en) 2017-08-28 2019-05-28 Samsung Electronics Co., Ltd. Infrared detector and infrared sensor including the same
US11069738B2 (en) 2017-08-28 2021-07-20 Samsung Electronics Co., Ltd. Infrared detector and infrared sensor including the same
JP2021089979A (ja) * 2019-12-04 2021-06-10 ソニーセミコンダクタソリューションズ株式会社 半導体素子および電子機器
JP7562250B2 (ja) 2019-12-04 2024-10-07 ソニーセミコンダクタソリューションズ株式会社 半導体素子および電子機器
JP2021125697A (ja) * 2020-02-07 2021-08-30 センサーズ・アンリミテッド・インコーポレーテッド 過電流保護によるｐｉｎダイオード
JP7648400B2 (ja) 2020-02-07 2025-03-18 センサーズ・アンリミテッド・インコーポレーテッド 過電流保護によるｐｉｎダイオード

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Publication number Publication date
EP3050128A2 (en) 2016-08-03
WO2015048304A2 (en) 2015-04-02
US10090356B2 (en) 2018-10-02
EP3050128A4 (en) 2017-04-05
US20180122851A1 (en) 2018-05-03
US20160218139A1 (en) 2016-07-28
WO2015048304A3 (en) 2015-05-21
US9935151B2 (en) 2018-04-03
IL244745A0 (en) 2016-04-21

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