TWI589014B - 使用電荷轉移之低雜訊混合型偵測器 - Google Patents

使用電荷轉移之低雜訊混合型偵測器 Download PDF

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TWI589014B
TWI589014B TW103116882A TW103116882A TWI589014B TW I589014 B TWI589014 B TW I589014B TW 103116882 A TW103116882 A TW 103116882A TW 103116882 A TW103116882 A TW 103116882A TW I589014 B TWI589014 B TW I589014B
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約翰 艾弗瑞 特瑞札
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Description

使用電荷轉移之低雜訊混合型偵測器
本發明一般係關於一種用於偵測近紅外(IR)光譜中之輻射之裝置。特定言之，本發明係關於一種藉由轉移電荷，而非藉由對透過其讀取電壓之一電容器充電且重設該電容器進行操作之低雜訊IR偵測器。
現代紅外(IR)成像系統可為焦平面偵測器陣列及將收集之信號轉變為視覺或其他可分析形式之每個像素中之關聯積體電路。在1μm至1.7μm波長區域中操作之近IR偵測器系統有時與在400nm至700nm波長範圍中操作之可見偵測系統組合以增強低光及傍晚分析藍本中之偵測及視覺化。組合之可見及近IR成像能力對於商業及軍事應用兩者而言愈加成為一戰略性需求。在用於近紅外下操作之成像系統之許多材料(例如，HgCdTe、Ge、InSb、PtSi等等)之中，歸因於InGaAs p-i-n光電二極體之高效能及可靠性(在國際光學工程學會(“SPIE”)會刊1990年第1341卷第432至437頁中，G.Olsen等人之「A 128X128 InGaAs detector array for 1.0-1.7 microns」)而選擇該等光電二極體。
短波長紅外(SWIR)成像陣列通常係混合裝置，其中光電二極體互連至矽電晶體讀出積體電路(ROIC)。在努力減少成本及簡化複雜製造中，如由Forrest等人之美國專利案第6,005,266所描述 (該案之全文以引用的方式併入本文中)，一InGaAs/Inp光電二極體已與作為每個像素之切換元件之一InP接面場效應電晶體(JFET)整合。光電二極體及FET在一單一基板上之組合實現具有減少之製造成本及增加之效能之全單片近IR焦平面陣列之形成。InP接面場效應電晶體展現低至2pA之洩漏電流。在相關工作中，如由Sugg等人之美國專利案第6,573,581號(該案之全文以引用的方式併入本文中)所描述，發現一GaAs p-i-n光電二極體之吸收層之有意摻雜可減少暗電流。
在先前偵測器中，光引發電荷在一單一區域中聚集，接著轉移至量測電容器上之電荷之一外部電容器。然後在下一個量測之前「重設」電容器。因為難以在一無限時間量中完全重設一電容器，且聚集區域可在自身讀取操作期間聚集電荷，所以存在信號讀取量之變動之機會。
一種紅外光電偵測器，其包含：一第一導電性類型之第一較小能帶隙層；一第一導電性類型之第一較大能帶隙層，其覆疊光電偵測器層；一第二導電性類型之聚集阱，其在該第一較大能帶隙層中且與該第一較小能帶隙層接觸，使得該第一較小能帶隙層及該聚集阱形成一紅外光電二極體；一第二導電性類型之轉移阱，其在該第一較大能帶隙層中且與該聚集阱及該第一較小能帶隙層間隔開；及一電晶體，其包含該聚集阱、該轉移阱及該聚集阱與該轉移阱之間之一區域。
在一實施例中，一種紅外光電偵測器包含：一第一導電性類型之一第一較小能帶隙層；一第一導電性類型之一第一較大能帶隙層，其在該較小能帶隙層上；一第一導電性類型之第二較大能帶隙層，其在該較大能帶隙層上；及一第一導電性類型之一第二 較小能帶隙層，其在該第二較大能帶隙層上。一第二導電性類型之一聚集阱位於該等第一較小能帶隙層及第一較大能帶隙層中。一第二導電性類型之轉移阱位於該第一較大能帶隙層中且與該聚集阱分離。該第二較小能帶隙層上之電極經定位以使得電荷從該聚集阱轉移至該轉移阱。
在一進一步實施例中，一種形成一紅外光電偵測器之方法包含將第一導電性類型之一第一較大能帶隙層沈積於一第一導電性類型之一第一較小能帶隙層上且將一第一導電性類型之一第二較大能帶隙層沈積於該第一較大能帶隙層上。一第二導電性類型之一聚集阱藉由擴散形成於該等第一較小能帶隙層、第一較大能帶隙層及第二較大能帶隙層中。一第二導電性類型之一轉移阱藉由擴散形成於該等第一及第二較大能帶隙層中且與該聚集阱及該第一較小能帶隙層間隔開。該較小能帶隙層上之電極經定位以容許電荷從該聚集阱轉移至該轉移阱。
30、30A、30B、30C、30D‧‧‧裝置
32‧‧‧基底/基板層
34‧‧‧n型較小能帶隙光電感測器層
36‧‧‧n型非常大能帶隙層
38‧‧‧n型較大能帶隙層
40‧‧‧n型較小能帶隙鈍化層
42‧‧‧聚集阱
42A、42B、42C‧‧‧層
44‧‧‧轉移阱
44A、44B‧‧‧層
46‧‧‧源極電極
48‧‧‧閘極轉移電極
50‧‧‧汲極電極
52‧‧‧擴散障壁層
53‧‧‧窗
54‧‧‧擴散障壁層
55‧‧‧窗
60‧‧‧p+擴散區域
62‧‧‧傾卸阱
64‧‧‧轉移閘極電極
66、68‧‧‧區域
C1‧‧‧電容器
PD‧‧‧光電二極體
ROIC‧‧‧讀出積體電路
T1、T2、T3、T4、T5‧‧‧電晶體
圖1係本發明之一光電偵測器/電晶體裝置架構之一示意性說明。
圖2A至圖2C係展示本發明之光電偵測器之操作之說明。
圖3係本發明之光電偵測器及相關讀出積體電路(ROIC)之一示意性說明。
圖4A至圖4J係本發明之形成步驟之示意性說明。
圖5至圖8B展示光電偵測器/電晶體裝置之替代版。
圖1展示裝置30，其包含一整合光電偵測器PD及低雜訊、磊晶、多層場效應電晶體T1。此裝置架構使用用於電荷聚集之一區域及用於電荷量測之一分離區域。此外，對於信號位準之量測， 不需要一電容器。
雖然將基於InGaAs/InAlAs/InP材料及裝置技術描述光電偵測器裝置30，但本文討論之方法及特征並非易欲限於單獨材料系統，且其他III-V及II-VI化合物半導體材料包含於本發明之範疇中。
裝置30係一多層結構，其包含n型較大能帶隙基底或基板層32、n型較小能帶隙光電感測器層34、n型非常大能帶隙層36、n型較大能帶隙層38、n型較小能帶隙鈍化層40、p型聚集阱42、p+型轉移阱44、源極電極46、閘極轉移電極48及汲極電極50。N型較小能帶隙光電感測器層34及聚集阱42形成一短波長紅外(SWIR)光電二極體PD。層38與40、聚集阱42、轉移阱44、源極電極46、閘極轉移電極48及汲極電極50形成橫向接面場效應電晶體(JFET)T1。
在一實施例中，n型較大能帶隙基底層32係具有大約0.05μm之一厚度，大約1.0e18之摻雜濃度及大約1.344ev之能帶隙之InP。N型較小能帶隙光電感測器層34係具有大約2.7μm之一厚度，大約1.0e15至1.0e17之摻雜濃度及大約0.74ev之能帶隙之InGaAs。N型較大能帶隙層36係具有大約0.4μm之一厚度，大約1.0e16之摻雜濃度及大約1.46ev之能帶隙之InxAl1-xAs。N型較大能帶隙層38係具有大約0.1μm之一厚度，大約1.0e17之摻雜濃度及大約1.344ev之能帶隙之InP。N型較小能帶隙鈍化層40係具有大約0.05μm之一厚度，1.0e17之摻雜濃度及大約0.740ev之能帶隙之InxGa1-xAs。
在此實施例中，藉由擴散至層34、36及38中形成P型聚集阱42。結果，聚集阱42具有包括層42A、42B及42C之一三層結構。聚集阱42之層42A係具有大約0.1μm之一厚度，大約1.0e16之摻雜濃度及大約0.74ev之能帶隙之InxGa1-xAs。聚集阱42之層42B係具有大約0.4μm之一厚度，大約1.0e16之摻雜濃度及大約1.46ev之能帶隙之InxAl1-xAs。聚集阱42之層42C係具有大約0.05μm至0μm之 一厚度，大約1.0e16之摻雜濃度及大約1.344ev之能帶隙之InP。藉由擴散至層36及38中形成轉移阱44。結果，轉移阱44具有包括層44A及44B之一兩層結構。聚集阱44之層44A可為具有大約0.2μm之一厚度，大約1.0e17之摻雜濃度及大約1.46ev之能帶隙之InxAl1-xAs。轉移阱44之層44B係具有大約0.05μm至0μm之一厚度，大約1.0e17之摻雜濃度及大約1.344ev之能帶隙之InP。
源極電極46、閘極轉移電極48及汲極電極50可為技術中所知之Au、Cu、Ag、Pd、Pt、Ni及其他者。
繪示裝置30之操作之示意圖展示於圖2A至圖2C中。裝置藉由使光電引發之載子聚集於光電二極體T1之P型聚集阱42中來操作。聚集之電荷藉由電晶體T1從聚集阱42(其用作T1之源極)轉移至轉移阱44(其用作T1之汲極)。接著在不影響載子之產生及聚集下藉由光電二極體PD讀出轉移阱44中之電荷。
在圖2A中，SWIR輻射在高靈敏性n型較小能帶隙光電感測器層層34中吸收且產生光電引發之載子。在圖2B中，載子如由箭頭a所指示朝著聚集阱42驅動且跨由n型較小能帶隙光電感測器層34及聚集阱42形成之pn接面掃略。如圖2C中所示，接著阱42中之載子如由箭頭d示意性所示轉移至轉移阱44。閘極轉移電極48上之一正電壓將下伏非常大能帶隙層36轉化為聚集阱42與轉移阱44之間之p型。此容許聚集阱42中之電荷c移動至轉移阱44。接著藉由一外部ROIC電路取樣轉移阱44中之電荷。此係全部電荷轉移且在轉移期間不產生重設雜訊。
圖3展示具有ROIC電路之一部分之裝置30。裝置30之電晶體T1形成由ROIC使用之一五電晶體(5T)架構之一電晶體以獲取由裝置30之光電二極體PD產生之光電信號來用於量測。在一SWIR陣列中，將存在與關聯之5T電路一起之一陣列之裝置30。光電信號藉由5T電路傳遞至量測及進一步信號處理電路(未展示)。
圖3中之5T電路包含場效應電晶體T1至T5及可選電容器C1。電晶體T2係一重設電晶體，其藉由將轉移阱44連接至接地而導通以重設裝置30來用於下一個電荷轉移及讀出循環。此在載子從聚集42之下一個轉移之前重設轉移阱44。
電晶體T3使其閘極連接至裝置30之汲極電極50。電晶體T3用作一源極隨耦器，其中其源極電壓係根據轉移阱44中之電荷。
電晶體T4及T5分別係樣本選擇及行選擇開關，其等選擇正傳遞至會傳遞到進一步ROIC電路之光電信號之光電信號。若期望循序，而非同時執行樣本及行選擇，則使用電容器C1。在該案例中，T3之源極處之電壓儲存於電容器C1中且接著藉由導通行選擇電容器T5讀出。
形成裝置30之一方法展示於圖4A至圖4J。圖4A中所示之開始材料係由層32、34、36、38及40組成之一多層異質結構。舉一實例而言，層32及38可為InP；層34可為InxGa1-xAs；且層36可為InxAlyGa(1-(x+y))As。已經描述一特定實施例之組合物、厚度及摻雜級。可藉由技術中所知之任何磊晶生長程序形成異質結構。實例包含技術中所知之有機金屬氣相磊晶法(OMVPE)、金屬有機化學氣相沈積法(MOCVD)、分子束磊晶法(MBE)及其他者。一較佳技術係MOCVD。
在下一個步驟中，如圖4B中所示，擴散障壁層52沈積於具有窗53之頂部層38上以容許摻雜材料透過摻雜窗53沈積於層38之一部分上。擴散障壁層52可為技術中所知之一氮化物、光阻劑或其他障壁材料。
如圖4C中所示，接著一第一擴散容許摻雜物形成p型聚集阱42。擴散p型阱42之深度有意延伸通過層36，使得其與n型較小能帶隙光電感測器層34接觸。
接著擴散障壁層52如圖4D中所示般移除且具有窗55之第二擴散障壁層54如圖4E中所示般沈積於較大能帶隙層38上。接著一第二擴撒容許摻雜物形成如圖4F中所示之p+型轉移阱44。
在圖4G中所示之下一個步驟中，移除擴散障壁層54，且為下一個層沈積程序製備表面。
如圖4H中所示，電荷阱42及聚集阱44過度生長了額外InP以將兩個阱埋入層38之InP材料中。接著如圖4I中所示，N型較小能帶隙鈍化層40沈積於層38上。
在最後步驟中，如圖4J中，接觸區域藉由光微影界定且源極電極46、閘極轉移電極48及汲極電極50沈積於較小能帶隙鈍化層40上。電極46、48及50藉由技術中所知之光微影、濺鍍、電鍍或其他沈積方法沈積。較佳接觸材料係技術中所知之Au、Cu、Ag、Pd、Pt、Ni及其他者。
光電偵測器裝置30A至30D繪示於圖5至圖8B中。在圖5之光電偵測器裝置30A中，轉移阱44從層40之頂部表面通過層38延伸至層36中。汲極電極50直接接觸轉移阱44。在讀取電荷之後立即排空轉移阱之此組態。
在圖6中，光電偵測器裝置30B包含p+擴散區域60，其將轉移阱44連接至層40之頂部表面。區域60將汲極電極50連接至轉移阱44。此組態之優點在於可在讀取電荷之後立即排空轉移阱。
光電偵測器裝置30C示意性展示於圖7中。光電偵測器裝置30C包含p+傾卸阱62及第二轉移閘極電極64。在讀取轉移阱44中之電壓之後，電荷可轉移(「傾卸」)至「傾卸阱」62中以排空轉移阱44。即，實際上，將一第二電晶體添加至裝置。
光電偵測器裝置30D示意性展示於圖8A及圖8B中。在光電偵測器裝置30D中，P型聚集阱42及P+型轉移阱44兩者延伸至層40之頂 部表面。源極電極46及汲極電極50分別直接接觸p型聚集阱42及p+型轉移阱44且形成肖特基(“Schottky”)障壁二極體接觸件。將一反向偏壓施加至電極46及50可在接觸件下面產生空乏區域而將區域66及68轉變為n型表面區域，其等將p聚集阱42及p+轉移阱44埋入載子遷移障壁層下面而導致減少(或消除)之表面雜訊。
在電荷已於轉移阱44中聚集中之後，產生如圖8A中所示之載子遷移障壁層68之電極50上之偏壓電壓可改變以移除肖特基障壁。如圖8B中示意性展示，接著轉移阱44中之載子可透過汲極電極50擷取。在另一實施例中，聚集阱42可如圖4J中所示般保持埋入於載子遷移障壁層38及40下面，同時轉移阱44可如圖5中延伸至表面。在此案例中，汲極電極50及轉移阱44可形成一肖特基障壁，其經偏壓以如圖8A中產生一載子遷移障壁，直至需要擷取轉移阱44中之載子。
圖1及圖5至圖8B中所示之光電偵測器/電晶體結構提供某些設計特征及優點。其等包含：
電荷阱42可為由除了通過電荷聚集區域之外之所有側上之一細密能帶隙工程材料包圍之一埋入式p型擴散層。此容許電荷聚集，同時使聚集暗電流為低且使聚集區域與InGaAs材料之表面分離。此埋入層最小化表面重組及對雜訊之分流貢獻兩者。
電荷阱42及轉移阱44可形成一雙擴散/再生長結構。其等包括具有不同深度及摻雜物濃度之兩個p型區域。此組合實現一全部電荷轉移及轉移區域與光電流產生區域之一隔離兩者。此超低讀取雜訊效能之關鍵。
取代FET 30，p-n-p電晶體可用於將電荷從聚集阱轉移至轉移阱。
所有此等特徵加上用於從轉移阱44傾卸電荷之一機構可包含 於5至8微米像素中。
藉由避免先前技術之電容器重設雜訊，像素之固有雜訊可為低於先前技術裝置之數量級。
本發明之架構可達成五倍(5X)大之靈敏性而實現在低星光級下之夜晚成像，同時將像素間距減少了三分之二(2/3)。結果，偵測器可在較低光條件下操作；對於一給定光級，在較高操作溫度下操作；因為(例如)不需要冷卻來改進效能，所以在較低功率下操作；且容許具有較小光學器件之一較小偵測器中之較高解析度及一晶圓上之晶片之一較高面積密度，此導致減少之成本。
可行性實施例之討論
下文係本發明之可行性實施例之非排他性描述。
一種紅外光電偵測器包含：一第一導電性類型之第一較小能帶隙層；一第一導電性類型之第一較大能帶隙層，其覆疊光電偵測器層；一第二導電性類型之聚集阱，其在第一較大能帶隙層中且與第一較小能帶隙層接觸，使得第一較小能帶隙層及聚集阱形成一紅外光電二極體；一第二導電性類型之轉移阱，其在第一較大能帶隙層中且與聚集阱及第一較小能帶隙層間隔開；及一電晶體，其包含聚集阱、轉移阱及聚集阱與轉移阱之間之一區域。
前述段落之光電偵測器可視情況額外地及/或替代地包含以下特徵、組態及/或組件之任何一者或多者。
電晶體可包含：一第一電極，其耦合至聚集阱；一第二電極，其耦合至轉移阱；及一第三電極，其耦合至聚集阱與轉移阱之間之區域。
第一、第二及第三電極可為Ti、Pt、Au、Ni、Cu或其等之組合。
第一導電性類型之第二較大能帶隙層可覆疊第一較大能帶隙 層。
聚集阱可為一埋入結構，其連接至一側上之第一較小能帶隙層且否則由第一及第二較大能帶隙層包圍。
轉移阱可為第一及第二較大能帶隙層內之埋入結構。
一第一導電性類型之第二較小能帶隙層可覆疊第二較大能帶隙層。
轉移阱可延伸至第二較小能帶隙層之一頂部表面。
聚集阱可延伸至第二較小能帶隙層之一頂部表面。
一第二導電性類型之傾卸阱可在第一較大能帶隙層中且與較小能帶隙層及轉移阱間隔開。
一種紅外光電偵測器可包含：一第一導電性類型之一第一較小能帶隙層；一第一導電性類型之一第一較大能帶隙層，其可在第一能帶隙層上；一第一導電性類型之一第二較大能帶隙層，其可在第一較大能帶隙層上；一第二較小能帶隙層，其可在第二較大能帶隙層上；一第二導電性類型之一聚集阱，其可位於第一較小能帶隙層及第一較大能帶隙層中；一第二導電性類型之一轉移阱，其可位於第一較大能帶隙層中；及第二較小能帶隙層上之電極，其等可經定位以使得電荷從聚集阱轉移至轉移阱。
前述段落之光電偵測器可視情況額外地及/或替代地包含以下特徵、組態及/或組件之任何一者或多者。
聚集阱可為一埋入結構，其延伸至第一較小能帶隙層中且否則由第一及第二較大能帶隙層包圍。
轉移阱可為第一及第二較大能帶隙層中之一埋入結構。
聚集阱可延伸至第二較小能帶隙層之一頂部表面。
轉移阱可延伸至第二較小能帶隙層之一頂部表面。
一第二導電性類型之一傾卸阱可在第一較大能帶隙層中且與 第一較小能帶隙層及轉移阱間隔開。
一種形成一紅外光電偵測器之方法可包含：沈積一第一導電性類型之第一較小能帶隙層；將一第一導電性類型之第一較大能帶隙層沈積於第一導電性類型之第一較小能帶隙層上；將一第一導電性類型之第二較大能帶隙層沈積於第一較大能帶隙層上；藉由擴散形成位於第一較小能帶隙層、第一較大能帶隙層及第二較大能帶隙層中之一第二導電性類型之聚集阱；且藉由擴散形成位於第一及第二較大能帶隙層中且與聚集阱及第一較小能帶隙層間隔開之一第二導電性類型之轉移阱。
前述段落之方法可視情況額外地及/或替代地包含以下特徵、組態及/或組件之任何一者或多者。
第二較大能帶隙層可經沈積，使得聚集阱及轉移阱可埋入。
一第二較小能帶隙層可沈積於第二較大能帶隙層上。
電極可形成於覆疊聚集阱、轉移阱及聚集阱與轉移阱之間之一區域的第二較小能帶隙層之一頂部表面上。
雖然已參考(若干)例示性實施例描述本發明，但熟悉此項技術者將理解，可在不脫離於本發明之範疇下實現多種改變且等效物被其元件替換。此外，可在不脫離於本發明之本質範疇下實現許多修改以使一特定情形或材料適應於其教示。因此，意欲本發明並不限於揭示之(若干)特定實施例，但本發明將包含屬於隨附申請專利範圍之範疇內之所有實施例。
30‧‧‧裝置
32‧‧‧基底/基板層
34‧‧‧n型較小能帶隙光電感測器層
36‧‧‧n型非常大能帶隙層
38‧‧‧n型較大能帶隙層
40‧‧‧n型較小能帶隙鈍化層
42‧‧‧聚集阱
42A、42B、42C‧‧‧層
44‧‧‧轉移阱
44A、44B‧‧‧層
46‧‧‧源極電極
48‧‧‧閘極轉移電極
50‧‧‧汲極電極
PD‧‧‧光電二極體
ROIC‧‧‧讀出積體電路
T1‧‧‧電晶體

Claims (15)

  1. 一種紅外光電偵測器，其包括：一第一導電性類型之第一較小能帶隙層；一第一導電性類型之第一較大能帶隙層，其覆疊該第一導電性類型之第一較小能帶隙層；一第二導電性類型之聚集阱，其在該第一較大能帶隙層中且與該第一較小能帶隙層接觸，使得該第一較小能帶隙層及該聚集阱形成一紅外光電二極體；一第二導電性類型之轉移阱，其在該第一較大能帶隙層中且與該聚集阱及該第一較小能帶隙層間隔開；及一電晶體，其包含該聚集阱、該轉移阱及該聚集阱與該轉移阱之間之一區域。
  2. 如申請專利範圍第1項之紅外光電偵測器，其中該電晶體進一步包含：一第一電極，其耦合至該聚集阱；一第二電極，其耦合至該轉移阱；及一第三電極，其耦合至該聚集阱與該轉移阱之間之該區域。
  3. 如申請專利範圍第2項之紅外光電偵測器，其中該等第一、第二及第三電極包括Ti、Pt、Au、Ni、Cu或其等之組合。
  4. 如申請專利範圍第1項之紅外光電偵測器，且進一步包括一第一導電性類型之第二較大能帶隙層，其覆疊該第一較大能帶隙層。
  5. 如申請專利範圍第4項之紅外光電偵測器，其中該聚集阱係一埋入結構，其連接至一側上之該第一較小能帶隙層，否則由第一及第二較大能帶隙層包圍。
  6. 如申請專利範圍第4項之紅外光電偵測器，其中該轉移阱係該等第一及第二較大能帶隙層內之一埋入結構。
  7. 如申請專利範圍第4項之紅外光電偵測器，且進一步包括一第一導電性類型之一第二較小能帶隙層，其覆疊該第二較大能帶隙層。
  8. 如申請專利範圍第7項之紅外光電偵測器，其中該轉移阱延伸至該第二較小能帶隙層之一頂部表面。
  9. 如申請專利範圍第7項之紅外光電偵測器，其中該聚集阱延伸至該第二較小能帶隙層之一頂部表面。
  10. 如申請專利範圍第1項之紅外光電偵測器，且進一步包括：一第二導電性類型之傾卸阱，其在該第一較大能帶隙層中且與該較小能帶隙層及該轉移阱間隔開。
  11. 一種紅外光電偵測器，其包括：一第一導電性類型之第一較小能帶隙層；一第一導電性類型之第一較大能帶隙層，其在該第一導電性類型之第一較小能帶隙層上；一第一導電性類型之第二較大能帶隙層，其在該第一較大能帶隙層上；一第二較小能帶隙層，其在該第二較大能帶隙層上；一第二導電性類型之聚集阱，其位於該等第一較小能帶隙層及第一較大能帶隙層中；一第二導電性類型之轉移阱，其位於該第一較大能帶隙層中；及該第二較小能帶隙層上之電極，其等經定位以使得電荷從該聚集阱轉移至該轉移阱。
  12. 如申請專利範圍第11項之紅外光電偵測器，其中該聚集阱係 一埋入結構，其延伸至該第一較小能帶隙層中且否則由該等第一及第二較大能帶隙層包圍。
  13. 如申請專利範圍第11項之紅外光電偵測器，其中該轉移阱係該等第一及第二較大能帶隙層中之一埋入結構。
  14. 如申請專利範圍第11項之紅外光電偵測器，其中該聚集阱延伸至該第二較小能帶隙層之一頂部表面。
  15. 如申請專利範圍第11項之紅外光電偵測器，其中該轉移阱延伸至該第二較小能帶隙層之一頂部表面。
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