JP2016535428A5 - - Google Patents

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Publication number
JP2016535428A5
JP2016535428A5 JP2016516518A JP2016516518A JP2016535428A5 JP 2016535428 A5 JP2016535428 A5 JP 2016535428A5 JP 2016516518 A JP2016516518 A JP 2016516518A JP 2016516518 A JP2016516518 A JP 2016516518A JP 2016535428 A5 JP2016535428 A5 JP 2016535428A5
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JP
Japan
Prior art keywords
jfet
cap layer
drain
detector array
array structure
Prior art date
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Pending
Application number
JP2016516518A
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English (en)
Japanese (ja)
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JP2016535428A (ja
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Publication date
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Priority claimed from PCT/US2014/057481 external-priority patent/WO2015048304A2/en
Publication of JP2016535428A publication Critical patent/JP2016535428A/ja
Publication of JP2016535428A5 publication Critical patent/JP2016535428A5/ja
Pending legal-status Critical Current

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JP2016516518A 2013-09-25 2014-09-25 低ノイズＩｎＧａＡｓフォトダイオードアレイ Pending JP2016535428A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361882385P 2013-09-25 2013-09-25
US61/882,385 2013-09-25
PCT/US2014/057481 WO2015048304A2 (en) 2013-09-25 2014-09-25 LOW NOISE InGaAs PHOTODIODE ARRAY

Publications (2)

Publication Number Publication Date
JP2016535428A JP2016535428A (ja) 2016-11-10
JP2016535428A5 true JP2016535428A5 (enExample) 2017-11-16

Family

ID=52744704

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016516518A Pending JP2016535428A (ja) 2013-09-25 2014-09-25 低ノイズＩｎＧａＡｓフォトダイオードアレイ

Country Status (5)

Country Link
US (2) US9935151B2 (enExample)
EP (1) EP3050128A4 (enExample)
JP (1) JP2016535428A (enExample)
IL (1) IL244745A0 (enExample)
WO (1) WO2015048304A2 (enExample)

Families Citing this family (12)

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JP2019533302A (ja) * 2016-08-31 2019-11-14 ジーレイ スイッツァーランド エスアー 接合インターフェースの電荷輸送で構成される電磁吸収放射線検出器
CN110546766B (zh) 2017-05-15 2023-11-14 索尼半导体解决方案公司 光电转换器件和摄像器件
KR102547801B1 (ko) 2017-08-28 2023-06-26 삼성전자주식회사 적외선 검출기 및 이를 포함하는 적외선 센서
CN109449238A (zh) * 2018-10-10 2019-03-08 中国科学院上海技术物理研究所 一种大规模小像元铟镓砷焦平面探测器制备方法
US11121302B2 (en) 2018-10-11 2021-09-14 SeeQC, Inc. System and method for superconducting multi-chip module
WO2020123161A1 (en) * 2018-12-14 2020-06-18 Flir Commercial Systems, Inc. Superlattice-based detector systems and methods
WO2020202557A1 (ja) * 2019-04-05 2020-10-08 三菱電機株式会社 半導体受光素子及び半導体受光素子製造方法
CN110660878B (zh) * 2019-09-26 2021-09-03 中国电子科技集团公司第十一研究所 一种平面碲镉汞雪崩二极管探测器及其制备方法
JP7562250B2 (ja) * 2019-12-04 2024-10-07 ソニーセミコンダクタソリューションズ株式会社 半導体素子および電子機器
US11251210B2 (en) * 2020-02-07 2022-02-15 Sensors Unlimited, Inc. Pin diodes with over-current protection
CN114267693B (zh) * 2021-12-22 2025-01-28 上海韦尔半导体股份有限公司 一种图像传感器结构及其制作方法和工作时序
FR3144697A1 (fr) 2022-12-28 2024-07-05 Soitec Procédé de fabrication d’un capteur d’image

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