JP2016526299A - 基板をボンディングする装置および方法 - Google Patents
基板をボンディングする装置および方法 Download PDFInfo
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- JP2016526299A JP2016526299A JP2016515664A JP2016515664A JP2016526299A JP 2016526299 A JP2016526299 A JP 2016526299A JP 2016515664 A JP2016515664 A JP 2016515664A JP 2016515664 A JP2016515664 A JP 2016515664A JP 2016526299 A JP2016526299 A JP 2016526299A
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Abstract
Description
● 以下の成分を主体とした非シリコン
○ ポリマ
ポリイミド
芳香族ポリマ
パリレン
PTFR
○ 芳香族炭素
● 以下の成分を主体としたシリコン
○ 以下の成分を主体としたケイ酸塩
TEOS(オルトケイ酸テトラエチル)
SiOF
SiOCH
ガラス(ホウケイ酸塩ガラス、アルミノケイ酸塩ガラス、ケイ酸鉛ガラス、アルカリケイ酸塩ガラス等)
○ 一般
Si3N4
SiC
SiC2
SiCN
○ シルセスキオキサン
HSSQ
MSSQ
2つの基板をパーマネント結合する際の極めて大きな技術的問題のうちの1つが、個々の基板の間の機能ユニットの位置合わせ精度である。基板は位置合わせ設備によって互いに対して極めて正確に位置合わせされ得るが、しかしボンディング過程自体の間に、基板の歪みが生じる恐れがある。こうして生じた歪みにより、機能ユニットは必ずしも全ての位置において互いに対して適正に位置合わせされているとは限らない。基板の特定の点における位置合わせ不精度は、歪み、スケーリング誤差、レンズ欠陥(拡大誤差もしくは縮小誤差)等の結果となり得る。半導体産業においては、このような問題にかかわるテーマ領域は全て「オーバレイ(重ね合わせ)」という概念に包含される。このテーマに関する相応する概論は、たとえばMack,Chris著の「Fundamental Principles of Optical Lithography−The Science of Microfabrication」(出版社WILEY、2007年,再版2012年)に記載されている。
2,2´,2´´,2´´´,2IV,2V,2V1 マウント体
2o 第1のマウント面
2o´ 第2のマウント面
3 第1の基板
3k 第1のコンタクト面
3s 側縁部
4 第2のマウント装置
5 開口
6,6´ 固定手段
7 ピン
8 第2の基板
8k 第2のコンタクト面
8s 側縁部
9,9´,9´´,9´´´ 基体
10 作動エレメント
11 温度制御手段
12 作動エレメント
13 ボンディングフロント
14,14´ 構造体
15 ガス/ガス混合物
16 固定区分
17 変形区分
18 収容区分
19 ショルダ区分
20 ボンディング開始個所
dx 位置合わせ誤差
d1,d2 直径
R,R1 曲率半径
Claims (13)
- 第1の基板(3)を第2の基板(8)と、両基板(3,8)のコンタクト面(3k,8k)のところでボンディングする方法であって、以下のステップ、特に以下のシーケンス:
第1の基板(3)を、第1のマウント装置(1)に設けられた第1のマウント面(2o)にマウントし、第2の基板(8)を、第2のマウント装置(4)に設けられた第2のマウント面(2o´)にマウントするステップと、
前記両コンタクト面(3k,8k)を所定のボンディング開始個所(20)でコンタクティングするステップと、
前記ボンディング開始個所(20)から両基板(3,8)の側縁部(3s,8s)にまで進行するボンディングウェーブに沿って、第1の基板(3)を第2の基板(8)とボンディングするステップと、
を有する方法において、
第1の基板(3)および/または第2の基板(8)を、前記コンタクト面(3k,8k)の位置合わせのために、前記ボンディング開始個所(20)外でボンディングの前および/またはボンディングの間、変形させることを特徴とする、基板をボンディングする方法。 - 第1の基板(3)および/または第2の基板(8)の変形を、ボンディングウェーブの進行に影響を与える規定の影響付与因子に関連して行う、請求項1記載の方法。
- 前記ボンディング開始個所(20)が、前記コンタクト面(3k,8k)の中央部に配置されている、請求項1または2記載の方法。
- 第1の基板(3)および/または第2の基板(8)の変形を、横方向にかつ/または凹面状または凸面状に行う、請求項1から3までのいずれか1項記載の方法。
- 前記変形を、第1の基板(3)および/または第2の基板(8)の伸長または圧縮または湾曲によって行う、請求項1から4までのいずれか1項記載の方法。
- 前記両基板(3,8)の直径(d1,d2)が、5mmよりも小さい分だけ、特に3mmよりも小さい分だけ、好ましくは1mmよりも小さい分だけ、互いに異なる、請求項1から5までのいずれか1項記載の方法。
- 前記変形を、機械的な作動手段により、かつ/または前記第1のマウント装置(1)および/または前記第2のマウント装置(4)の温度制御により、行う、請求項1から6までのいずれか1項記載の方法。
- 第1の基板(3)および/または第2の基板(8)を、側縁部(3s,8s)の範囲でのみ、前記第1のマウント面(2o)および/または前記第2のマウント面(2o´)に位置固定する、請求項1から7までのいずれか1項記載の方法。
- 第1の基板(3)を第2の基板(8)と、両基板(3,8)のコンタクト面(3k,8k)のところでボンディングする装置であって:
第1の基板(3)を第1のマウント面(2o)にマウントする第1のマウント装置(1)と、第2の基板(8)を第2のマウント面(2o´)にマウントする第2のマウント装置(4)と、
前記両コンタクト面(3k,8k)を所定のボンディング開始個所(20)でコンタクティングするコンタクト手段と、
を備えた、基板をボンディングする装置において、
第1の基板(3)および/または第2の基板(8)を、前記コンタクト面(3k,8k)の位置合わせのために、前記ボンディング開始個所(20)外でボンディングの前および/またはボンディングの間、変形させる変形手段が設けられていることを特徴とする、基板をボンディングする装置。 - 前記変形手段が、特に前記第1のマウント面(2o)のところで横方向にかつ/または凸面状または凹面状に変形可能な前記第1のマウント装置(1)を含む、請求項9記載の装置。
- 前記変形手段が、特に前記第2のマウント面(2o´)のところで横方向にかつ/または凸面状または凹面状に変形可能な前記第2のマウント装置(4)を含む、請求項9記載の装置。
- 前記変形手段が、機械的な作動手段を有し、かつ/または前記第1のマウント装置(1)および/または前記第2のマウント装置(4)の温度を制御する温度制御手段を有する、請求項9から11までのいずれか1項記載の装置。
- 第1の基板(3)および/または第2の基板(8)を、側縁部(3s,8s)の範囲でのみ、前記第1のマウント面(2o)および/または前記第2のマウント面(2o´)に位置固定する位置固定手段が配置されている、請求項9から12までのいずれか1項記載の装置。
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