JP2016521919A5 - - Google Patents

Download PDF

Info

Publication number
JP2016521919A5
JP2016521919A5 JP2016518357A JP2016518357A JP2016521919A5 JP 2016521919 A5 JP2016521919 A5 JP 2016521919A5 JP 2016518357 A JP2016518357 A JP 2016518357A JP 2016518357 A JP2016518357 A JP 2016518357A JP 2016521919 A5 JP2016521919 A5 JP 2016521919A5
Authority
JP
Japan
Prior art keywords
well
mems
resistor
poly
polyresistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2016518357A
Other languages
English (en)
Japanese (ja)
Other versions
JP2016521919A (ja
JP6396440B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2014/040235 external-priority patent/WO2015009360A1/en
Publication of JP2016521919A publication Critical patent/JP2016521919A/ja
Publication of JP2016521919A5 publication Critical patent/JP2016521919A5/ja
Application granted granted Critical
Publication of JP6396440B2 publication Critical patent/JP6396440B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2016518357A 2013-06-07 2014-05-30 マイクロ電気機械システム（ｍｅｍｓ）デジタル可変キャパシタ（ｄｖｃ） Expired - Fee Related JP6396440B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361832167P 2013-06-07 2013-06-07
US61/832,167 2013-06-07
PCT/US2014/040235 WO2015009360A1 (en) 2013-06-07 2014-05-30 Non-symmetric arrays of mems digital variable capacitor with uniform operating characteristics

Publications (3)

Publication Number Publication Date
JP2016521919A JP2016521919A (ja) 2016-07-25
JP2016521919A5 true JP2016521919A5 (https=) 2017-06-29
JP6396440B2 JP6396440B2 (ja) 2018-09-26

Family

ID=51033537

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016518357A Expired - Fee Related JP6396440B2 (ja) 2013-06-07 2014-05-30 マイクロ電気機械システム（ｍｅｍｓ）デジタル可変キャパシタ（ｄｖｃ）

Country Status (5)

Country Link
US (1) US10029909B2 (https=)
EP (1) EP3003964B1 (https=)
JP (1) JP6396440B2 (https=)
CN (1) CN105263853B (https=)
WO (1) WO2015009360A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10651170B2 (en) 2017-07-11 2020-05-12 Taiwan Semiconductor Manufacturing Co., Ltd. Isolated wells for resistor devices
US11011459B1 (en) * 2020-02-06 2021-05-18 Qualcomm Incorporated Back-end-of-line (BEOL) on-chip sensor
AU2021296908A1 (en) 2020-06-26 2023-02-16 Aprecia Pharmaceuticals LLC Rapidly-orodispersible tablets having an interior cavity
CN112038091B (zh) 2020-08-04 2022-08-19 厚元技术（香港）有限公司 一种基于mems结构的可调电容
CN115763444B (zh) * 2022-09-08 2026-04-03 上海类比半导体技术有限公司 一种电容器及芯片

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10163429A (ja) 1996-11-29 1998-06-19 Mitsubishi Electric Corp 半導体装置
US6876056B2 (en) * 2001-04-19 2005-04-05 Interuniversitair Microelektronica Centrum (Imec) Method and system for fabrication of integrated tunable/switchable passive microwave and millimeter wave modules
JP4428504B2 (ja) * 2003-04-23 2010-03-10 株式会社ルネサステクノロジ 半導体集積回路装置
JP2007512793A (ja) * 2003-12-01 2007-05-17 オーディオアシクス エー／エス 電圧ポンプを有するマイクロホン
US7491595B2 (en) * 2005-07-06 2009-02-17 Hewlett-Packard Development Company, L.P. Creating high voltage FETs with low voltage process
EP2210857A1 (en) 2005-11-16 2010-07-28 QUALCOMM MEMS Technologies, Inc. MEMS switch with set and latch electrodes
DE102006061386B3 (de) * 2006-12-23 2008-06-19 Atmel Germany Gmbh Integrierte Anordnung, ihre Verwendung und Verfahren zu ihrer Herstellung
US8786396B2 (en) * 2008-09-17 2014-07-22 Stmicroelectronics Pte. Ltd. Heater design for heat-trimmed thin film resistors
US7915715B2 (en) * 2008-11-25 2011-03-29 Amkor Technology, Inc. System and method to provide RF shielding for a MEMS microphone package
DE112009005017T5 (de) 2009-06-29 2012-07-26 Fujitsu Limited Halbleitervorrichtung und Verfahren zur Herstellung einer Halbleitervorrichtung
JP5402355B2 (ja) 2009-07-28 2014-01-29 ソニー株式会社 シャントスイッチ、半導体デバイス、モジュールおよび電子機器
US8941176B2 (en) * 2009-09-29 2015-01-27 Stmicroelectronics S.R.L. Integrated device with raised locos insulation regions and process for manufacturing such device
JP5479227B2 (ja) * 2010-05-28 2014-04-23 株式会社東芝 半導体装置
US8776337B2 (en) * 2010-07-30 2014-07-15 Hewlett-Packard Development Company, L.P. Methods of forming capacitive sensors
US8878312B2 (en) * 2011-03-01 2014-11-04 Taiwan Semiconductor Manufacturing Company, Ltd. Electrical bypass structure for MEMS device
WO2013033613A2 (en) 2011-09-02 2013-03-07 Cavendish Kinetics, Inc Rf mems isolation, series and shunt dvc, and small mems
US8981861B2 (en) * 2012-06-08 2015-03-17 Hittite Microwave Corporation Injection locked pulsed oscillator
JP2014053529A (ja) * 2012-09-10 2014-03-20 Toshiba Corp 電子装置
US9275991B2 (en) * 2013-02-13 2016-03-01 Analog Devices, Inc. Apparatus for transceiver signal isolation and voltage clamp

Similar Documents

Publication Publication Date Title
WO2016053623A3 (en) Three dimensional memory device having comb-shaped source electrode and methods of making thereof
EP4044229A3 (en) Diffusion barrier collar for interconnects
JP2016521919A5 (https=)
TW201614812A (en) One time programmable non-volatile memory
WO2016064134A3 (en) Light emitting device and method of fabricating the same
JP2015084411A5 (ja) 半導体装置
TW201612964A (en) Semiconductor device and semiconductor device manufacturing method
JP2015156477A5 (ja) 半導体装置
WO2012033922A3 (en) High conductivity electrostatic chuck
TW201613094A (en) Structure of fin feature and method of making same
WO2018194291A3 (ko) 궐련형 전자담배장치용 발열히터
JP2015015270A5 (https=)
JP2013211573A5 (https=)
EP2405492A3 (en) Semiconductor light-emitting device and method of manufacturing the same
JP2011054949A5 (ja) 半導体装置
EP2762441A3 (en) Internal electrical contact for enclosed MEMS devices
WO2009059052A3 (en) Bipolar electrosurgical probe having insulated overlapping conductive elements
JP2015046561A5 (ja) 半導体装置及び表示装置
TW201614794A (en) Semiconductor device
AR096656A1 (es) Conjunto conductor
WO2014096962A3 (en) Recessed contact to semiconductor nanowires
WO2016075298A3 (en) Implantable electrode array
EP2894682A3 (en) Thermoelectric module and heat conversion device using the same
JP2015230959A5 (https=)
WO2013110935A3 (en) An insulating component