JP2016517134A - Oled薄膜カプセル化のためのフッ素含有プラズマ重合hmdso - Google Patents
Oled薄膜カプセル化のためのフッ素含有プラズマ重合hmdso Download PDFInfo
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- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 title claims abstract description 23
- 229910052731 fluorine Inorganic materials 0.000 title claims abstract description 23
- 239000011737 fluorine Substances 0.000 title claims abstract description 23
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 title claims description 14
- 238000005538 encapsulation Methods 0.000 title description 3
- 239000010409 thin film Substances 0.000 title 1
- 239000010410 layer Substances 0.000 claims abstract description 148
- 230000004888 barrier function Effects 0.000 claims abstract description 59
- 238000000034 method Methods 0.000 claims abstract description 33
- 239000012790 adhesive layer Substances 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims description 43
- 238000000151 deposition Methods 0.000 claims description 23
- 239000007789 gas Substances 0.000 claims description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- 230000005540 biological transmission Effects 0.000 abstract description 6
- 239000002243 precursor Substances 0.000 description 26
- 230000008021 deposition Effects 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 239000002245 particle Substances 0.000 description 7
- 239000011261 inert gas Substances 0.000 description 6
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 description 5
- 239000007833 carbon precursor Substances 0.000 description 4
- 239000012705 liquid precursor Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 239000000725 suspension Substances 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910001374 Invar Inorganic materials 0.000 description 1
- 229910004014 SiF4 Inorganic materials 0.000 description 1
- -1 SiON Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- GVGCUCJTUSOZKP-UHFFFAOYSA-N nitrogen trifluoride Chemical compound FN(F)F GVGCUCJTUSOZKP-UHFFFAOYSA-N 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000010944 pre-mature reactiony Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
- H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/40—Organosilicon compounds, e.g. TIPS pentacene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
本発明の実施形態は、概して、有機発光ダイオード(OLED)をカプセル化するための方法及び装置に関する。
OLEDは、情報を表示するための、テレビスクリーン、コンピュータモニター、携帯電話、他のハンドヘルドデバイス等の製造に使用される。OLEDディスプレイは、例えば、液晶ディスプレイ(LCD)と比べて、より速い応答時間、より大きな視野角、より高いコントラスト、より軽い重量、低消費電力、及びフレキシブル基板への適合性のため、ディスプレイ用途において最近かなりの関心を集めている。
Claims (15)
- 有機発光ダイオード(OLED)デバイス上にカプセル化構造を形成するための方法であって、
OLED構造が上に配置された基板の領域上に第1バリア層を堆積させる工程と、
第1バリア層上にバッファ接着層を堆積させる工程と、
バッファ接着層上にフッ素含有プラズマを用いてバッファ層を堆積させる工程と、
バッファ層上に応力緩和層を堆積させる工程と、
応力緩和層上に第2バリア層を堆積させる工程を含む方法。 - バッファ層は、フッ素化プラズマ重合ヘキサメチルジシロキサン(pp−HMDSO:F)を含む、請求項1記載の方法。
- フッ素含有プラズマは、1以上のフッ素含有ガス及びHMDSOガスを含む、請求項2記載の方法。
- フッ素含有ガスは、NF3、SiF4、F2、CF4、及びそれらの組み合わせからなる群から選択される、請求項3記載の方法。
- 第1及び第2バリア層、バッファ接着層、応力緩和層、及びバッファ層は、単一の処理チャンバ内で堆積される、請求項1記載の方法。
- 単一の処理チャンバは、PECVDチャンバである、請求項5記載の方法。
- バッファ接着層は、酸窒化ケイ素を含む、請求項6記載の方法。
- 応力緩和層は、酸窒化ケイ素を含む、請求項7記載の方法。
- 第1及び第2バリア層は、窒化ケイ素を含む、請求項8記載の方法。
- OLED構造が上に配置された基板の領域上に配置された第1バリア層と、
第1バリア層上に配置されたバッファ接着層と、
バッファ接着層上に配置されたフッ素化バッファ層と、
フッ素化バッファ層上に堆積された応力緩和層と、
応力緩和層上に配置された第2バリア層を含むOLEDデバイス。 - フッ素化バッファ層は、フッ素化プラズマ重合ヘキサメチルジシロキサン(pp−HMDSO:F)を含む、請求項10記載のデバイス。
- 第1及び第2バリア層は、窒化ケイ素を含む、請求項11記載のデバイス。
- バッファ接着層は、酸窒化ケイ素を含む、請求項12記載のデバイス。
- 応力緩和層は、酸窒化ケイ素を含む、請求項13のデバイス。
- フッ素化バッファ層は、10原子%未満のフッ素を有する、請求項14記載のデバイス。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
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US201361772509P | 2013-03-04 | 2013-03-04 | |
US61/772,509 | 2013-03-04 | ||
US201361893384P | 2013-10-21 | 2013-10-21 | |
US61/893,384 | 2013-10-21 | ||
PCT/US2014/015060 WO2014137529A1 (en) | 2013-03-04 | 2014-02-06 | Fluorine-containing plasma polymerized hmdso for oled thin film encapsulation |
Publications (2)
Publication Number | Publication Date |
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JP2016517134A true JP2016517134A (ja) | 2016-06-09 |
JP6431488B2 JP6431488B2 (ja) | 2018-11-28 |
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JP2015561352A Active JP6431488B2 (ja) | 2013-03-04 | 2014-02-06 | Oled薄膜カプセル化のためのフッ素含有プラズマ重合hmdso |
Country Status (6)
Country | Link |
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US (3) | US9331311B2 (ja) |
JP (1) | JP6431488B2 (ja) |
KR (1) | KR102139211B1 (ja) |
CN (2) | CN105009319B (ja) |
TW (1) | TWI655796B (ja) |
WO (1) | WO2014137529A1 (ja) |
Cited By (6)
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JP2019534538A (ja) * | 2016-11-06 | 2019-11-28 | オルボテック エルティ ソラー,エルエルシー | 有機発光ダイオードの封止方法及び装置 |
JP2021122044A (ja) * | 2020-11-18 | 2021-08-26 | アプライド マテリアルズ インコーポレイテッドApplied Materials, Incorporated | Oledデバイスの製造に使用される真空システムを洗浄するための方法、oledデバイスを製造するための基板の上での真空堆積のための方法、及びoledデバイスを製造するための基板の上での真空堆積のための装置 |
JP2021536092A (ja) * | 2019-08-09 | 2021-12-23 | 武漢華星光電半導体顕示技術有限公司Wuhan China Star Optoelectronics Semiconductor Disolay Technology Co., Ltd | 表示パネル及びその製造方法 |
JP2022522964A (ja) * | 2019-01-15 | 2022-04-21 | アプライド マテリアルズ インコーポレイテッド | Hmdso熱安定性のための方法 |
JP2023515932A (ja) * | 2020-02-28 | 2023-04-17 | アプライド マテリアルズ インコーポレイテッド | 薄膜封入を改善するための方法 |
US11673170B2 (en) | 2017-04-28 | 2023-06-13 | Applied Materials, Inc. | Method for cleaning a vacuum system used in the manufacture of OLED devices, method for vacuum deposition on a substrate to manufacture OLED devices, and apparatus for vacuum deposition on a substrate to manufacture OLED devices |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20180006967A (ko) | 2015-05-14 | 2018-01-19 | 어플라이드 머티어리얼스, 인코포레이티드 | Oled 애플리케이션들을 위한 필름 스택들의 캡슐화 |
CN105118933B (zh) * | 2015-09-02 | 2018-03-13 | 深圳市华星光电技术有限公司 | 薄膜封装方法及有机发光装置 |
JP6232041B2 (ja) * | 2015-12-18 | 2017-11-15 | 東京エレクトロン株式会社 | 成膜方法および成膜装置 |
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US10615368B2 (en) * | 2017-01-09 | 2020-04-07 | Applied Materials, Inc. | Encapsulating film stacks for OLED applications with desired profile control |
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CN111755625A (zh) * | 2020-06-24 | 2020-10-09 | 武汉华星光电半导体显示技术有限公司 | 显示面板及其制备方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002329720A (ja) * | 2001-04-27 | 2002-11-15 | Samco International Inc | デバイス用保護膜及びその作製方法 |
JP2004311430A (ja) * | 2003-04-04 | 2004-11-04 | Toppoly Optoelectronics Corp | 有機発光装置用カプセル構造の形成方法 |
JP2005335067A (ja) * | 2004-05-24 | 2005-12-08 | Nippon Zeon Co Ltd | ガスバリア積層体及び発光素子 |
JP2006164543A (ja) * | 2004-12-02 | 2006-06-22 | Serubakku:Kk | 有機el素子の封止膜、有機el表示パネルおよびその製造方法 |
JP2008004545A (ja) * | 2006-06-13 | 2008-01-10 | Applied Materials Gmbh & Co Kg | 有機デバイスのカプセル化 |
US20110097533A1 (en) * | 2009-10-27 | 2011-04-28 | Suna Displays Co., Ltd. | Thin film encapsulation method |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100205318B1 (ko) * | 1996-10-11 | 1999-07-01 | 구본준 | 자유전율의 절연막 제조방법 |
KR100249784B1 (ko) * | 1997-11-20 | 2000-04-01 | 정선종 | 고분자복합막을이용한유기물혹은고분자전기발광소자의패키징방법 |
US6068884A (en) * | 1998-04-28 | 2000-05-30 | Silcon Valley Group Thermal Systems, Llc | Method of making low κ dielectric inorganic/organic hybrid films |
US6268695B1 (en) | 1998-12-16 | 2001-07-31 | Battelle Memorial Institute | Environmental barrier material for organic light emitting device and method of making |
EP1524708A3 (en) * | 1998-12-16 | 2006-07-26 | Battelle Memorial Institute | Environmental barrier material and methods of making. |
US6465953B1 (en) | 2000-06-12 | 2002-10-15 | General Electric Company | Plastic substrates with improved barrier properties for devices sensitive to water and/or oxygen, such as organic electroluminescent devices |
EP1419286A1 (en) * | 2001-08-20 | 2004-05-19 | Nova-Plasma Inc. | Coatings with low permeation of gases and vapors |
TW519853B (en) * | 2001-10-17 | 2003-02-01 | Chi Mei Electronic Corp | Organic electro-luminescent display and its packaging method |
US7220687B2 (en) * | 2004-06-25 | 2007-05-22 | Applied Materials, Inc. | Method to improve water-barrier performance by changing film surface morphology |
US7214600B2 (en) | 2004-06-25 | 2007-05-08 | Applied Materials, Inc. | Method to improve transmittance of an encapsulating film |
CN101412300A (zh) * | 2007-10-16 | 2009-04-22 | 富士胶片株式会社 | 阻隔性层叠体、阻隔性薄膜基板、器件以及阻隔性层叠体的制造方法 |
KR101001552B1 (ko) * | 2009-01-20 | 2010-12-17 | 삼성모바일디스플레이주식회사 | 유기 발광 표시 장치 |
KR101560234B1 (ko) * | 2009-06-29 | 2015-10-15 | 엘지디스플레이 주식회사 | 유기전계발광 표시장치 및 그 제조방법 |
CN201616434U (zh) * | 2009-10-29 | 2010-10-27 | 彩虹集团公司 | 一种有机发光器件的薄膜封装结构 |
KR101155904B1 (ko) * | 2010-01-04 | 2012-06-20 | 삼성모바일디스플레이주식회사 | 유기 발광 표시 장치 |
KR101127595B1 (ko) * | 2010-05-04 | 2012-03-23 | 삼성모바일디스플레이주식회사 | 유기 발광 표시 장치 및 그 제조방법 |
US8877546B2 (en) * | 2010-05-28 | 2014-11-04 | Corning Incorporated | Enhanced semiconductor devices employing photoactive organic materials and methods of manufacturing same |
CN109390496B (zh) | 2011-02-07 | 2021-06-15 | 应用材料公司 | 用于封装有机发光二极管的方法 |
KR101844557B1 (ko) * | 2011-02-08 | 2018-04-02 | 어플라이드 머티어리얼스, 인코포레이티드 | 유기 발광 다이오드의 하이브리드 캡슐화를 위한 방법 |
WO2012173692A1 (en) | 2011-06-17 | 2012-12-20 | Applied Materials, Inc. | Cvd mask alignment for oled processing |
US9312511B2 (en) * | 2012-03-16 | 2016-04-12 | Universal Display Corporation | Edge barrier film for electronic devices |
KR101889013B1 (ko) * | 2012-05-17 | 2018-08-21 | 삼성디스플레이 주식회사 | 평판 표시 장치의 박막 봉지 및 그 제조방법 |
US9449809B2 (en) | 2012-07-20 | 2016-09-20 | Applied Materials, Inc. | Interface adhesion improvement method |
US9397318B2 (en) | 2012-09-04 | 2016-07-19 | Applied Materials, Inc. | Method for hybrid encapsulation of an organic light emitting diode |
US9525155B2 (en) * | 2012-12-03 | 2016-12-20 | Samsung Sdi Co., Ltd. | Gas and moisture permeation barriers |
-
2014
- 2014-02-06 WO PCT/US2014/015060 patent/WO2014137529A1/en active Application Filing
- 2014-02-06 JP JP2015561352A patent/JP6431488B2/ja active Active
- 2014-02-06 KR KR1020157024718A patent/KR102139211B1/ko active IP Right Grant
- 2014-02-06 US US14/174,248 patent/US9331311B2/en active Active
- 2014-02-06 CN CN201480011308.4A patent/CN105009319B/zh active Active
- 2014-02-06 CN CN201710686083.8A patent/CN107464894B/zh active Active
- 2014-02-10 TW TW103104222A patent/TWI655796B/zh not_active IP Right Cessation
-
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- 2016-04-08 US US15/094,582 patent/US9761836B2/en active Active
-
2017
- 2017-09-11 US US15/700,681 patent/US10181581B2/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002329720A (ja) * | 2001-04-27 | 2002-11-15 | Samco International Inc | デバイス用保護膜及びその作製方法 |
JP2004311430A (ja) * | 2003-04-04 | 2004-11-04 | Toppoly Optoelectronics Corp | 有機発光装置用カプセル構造の形成方法 |
JP2005335067A (ja) * | 2004-05-24 | 2005-12-08 | Nippon Zeon Co Ltd | ガスバリア積層体及び発光素子 |
JP2006164543A (ja) * | 2004-12-02 | 2006-06-22 | Serubakku:Kk | 有機el素子の封止膜、有機el表示パネルおよびその製造方法 |
JP2008004545A (ja) * | 2006-06-13 | 2008-01-10 | Applied Materials Gmbh & Co Kg | 有機デバイスのカプセル化 |
US20110097533A1 (en) * | 2009-10-27 | 2011-04-28 | Suna Displays Co., Ltd. | Thin film encapsulation method |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019534538A (ja) * | 2016-11-06 | 2019-11-28 | オルボテック エルティ ソラー,エルエルシー | 有機発光ダイオードの封止方法及び装置 |
US11673170B2 (en) | 2017-04-28 | 2023-06-13 | Applied Materials, Inc. | Method for cleaning a vacuum system used in the manufacture of OLED devices, method for vacuum deposition on a substrate to manufacture OLED devices, and apparatus for vacuum deposition on a substrate to manufacture OLED devices |
JP2022522964A (ja) * | 2019-01-15 | 2022-04-21 | アプライド マテリアルズ インコーポレイテッド | Hmdso熱安定性のための方法 |
JP7317975B2 (ja) | 2019-01-15 | 2023-07-31 | アプライド マテリアルズ インコーポレイテッド | Hmdso熱安定性のための方法 |
US12041840B2 (en) | 2019-01-15 | 2024-07-16 | Applied Materials, Inc. | Methods for HMDSO thermal stability |
JP2021536092A (ja) * | 2019-08-09 | 2021-12-23 | 武漢華星光電半導体顕示技術有限公司Wuhan China Star Optoelectronics Semiconductor Disolay Technology Co., Ltd | 表示パネル及びその製造方法 |
JP2023515932A (ja) * | 2020-02-28 | 2023-04-17 | アプライド マテリアルズ インコーポレイテッド | 薄膜封入を改善するための方法 |
JP7450051B2 (ja) | 2020-02-28 | 2024-03-14 | アプライド マテリアルズ インコーポレイテッド | 薄膜封入を改善するための方法 |
JP2021122044A (ja) * | 2020-11-18 | 2021-08-26 | アプライド マテリアルズ インコーポレイテッドApplied Materials, Incorporated | Oledデバイスの製造に使用される真空システムを洗浄するための方法、oledデバイスを製造するための基板の上での真空堆積のための方法、及びoledデバイスを製造するための基板の上での真空堆積のための装置 |
JP7174100B2 (ja) | 2020-11-18 | 2022-11-17 | アプライド マテリアルズ インコーポレイテッド | Oledデバイスの製造に使用される真空システムを洗浄するための方法、oledデバイスを製造するための基板の上での真空堆積のための方法、及びoledデバイスを製造するための基板の上での真空堆積のための装置 |
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TW201442314A (zh) | 2014-11-01 |
CN107464894B (zh) | 2019-03-15 |
TWI655796B (zh) | 2019-04-01 |
US9331311B2 (en) | 2016-05-03 |
US20180013097A1 (en) | 2018-01-11 |
US10181581B2 (en) | 2019-01-15 |
CN105009319A (zh) | 2015-10-28 |
WO2014137529A1 (en) | 2014-09-12 |
US9761836B2 (en) | 2017-09-12 |
KR102139211B1 (ko) | 2020-07-29 |
US20140246655A1 (en) | 2014-09-04 |
JP6431488B2 (ja) | 2018-11-28 |
CN107464894A (zh) | 2017-12-12 |
CN105009319B (zh) | 2017-09-05 |
US20160226025A1 (en) | 2016-08-04 |
KR20150125667A (ko) | 2015-11-09 |
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