JP2016510178A - オプトエレクトロニクス部品及びオプトエレクトロニクス部品の製造方法 - Google Patents

オプトエレクトロニクス部品及びオプトエレクトロニクス部品の製造方法 Download PDF

Info

Publication number
JP2016510178A
JP2016510178A JP2015562021A JP2015562021A JP2016510178A JP 2016510178 A JP2016510178 A JP 2016510178A JP 2015562021 A JP2015562021 A JP 2015562021A JP 2015562021 A JP2015562021 A JP 2015562021A JP 2016510178 A JP2016510178 A JP 2016510178A
Authority
JP
Japan
Prior art keywords
connection layer
optoelectronic component
conversion element
component according
electromagnetic radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2015562021A
Other languages
English (en)
Japanese (ja)
Other versions
JP2016510178A5 (https=
Inventor
シュミットケ キャシー
シュミットケ キャシー
シュトル イオーン
シュトル イオーン
トニー　アルブレヒト
アルブレヒト トニー
クライン マークス
クライン マークス
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of JP2016510178A publication Critical patent/JP2016510178A/ja
Publication of JP2016510178A5 publication Critical patent/JP2016510178A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8515—Wavelength conversion means not being in contact with the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/853—Encapsulations characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/034—Manufacture or treatment of coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0362—Manufacture or treatment of packages of encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins

Landscapes

  • Led Device Packages (AREA)
JP2015562021A 2013-03-12 2014-03-04 オプトエレクトロニクス部品及びオプトエレクトロニクス部品の製造方法 Pending JP2016510178A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102013102482.3 2013-03-12
DE102013102482.3A DE102013102482A1 (de) 2013-03-12 2013-03-12 Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
PCT/EP2014/054147 WO2014139834A1 (de) 2013-03-12 2014-03-04 Optoelektronisches bauelement und verfahren zur herstellung eines optoelektronischen bauelements

Publications (2)

Publication Number Publication Date
JP2016510178A true JP2016510178A (ja) 2016-04-04
JP2016510178A5 JP2016510178A5 (https=) 2017-02-02

Family

ID=50345986

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015562021A Pending JP2016510178A (ja) 2013-03-12 2014-03-04 オプトエレクトロニクス部品及びオプトエレクトロニクス部品の製造方法

Country Status (6)

Country Link
US (1) US20160013369A1 (https=)
JP (1) JP2016510178A (https=)
KR (1) KR20150127133A (https=)
CN (1) CN105009312B (https=)
DE (1) DE102013102482A1 (https=)
WO (1) WO2014139834A1 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014106073A1 (de) * 2014-04-30 2015-11-05 Osram Opto Semiconductors Gmbh Vorrichtung mit einer lichtemittierenden Diode
JP2016092271A (ja) * 2014-11-06 2016-05-23 シャープ株式会社 蛍光体シートおよび照明装置
DE102017104144B9 (de) 2017-02-28 2022-03-10 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung von Leuchtdioden
WO2019027952A1 (en) * 2017-08-03 2019-02-07 Lumileds Llc METHOD FOR MANUFACTURING A LIGHT EMITTING DEVICE
DE102017121185A1 (de) * 2017-09-13 2019-03-14 Osram Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
FR3089351B1 (fr) * 2018-11-30 2022-07-22 Commissariat Energie Atomique DISPOSITIF OPTOELECTRONIQUE A DIODE ELECTROLUMINESCENTE EMETTANT DANS l’ULTRAVIOLET SUR LAQUELLE EST AGENCE UN DISPOSITIF OPTIQUE
CN111370563A (zh) * 2018-12-25 2020-07-03 弗洛里光电材料（苏州）有限公司 复合荧光胶膜及其应用
CN115498420B (zh) * 2022-08-15 2024-06-25 电子科技大学 基于钛酸锶复合材料的太赫兹吸波器与制备方法
DE102023133805A1 (de) * 2023-12-04 2025-06-05 Ams-Osram International Gmbh Optoelektronisches bauelement und verfahren zur herstellung eines optoelektronischen bauelements

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08148717A (ja) * 1994-11-15 1996-06-07 Nichia Chem Ind Ltd 青色発光ダイオード
JP2003286292A (ja) * 2002-01-28 2003-10-10 Mitsubishi Chemicals Corp 半導体超微粒子及びそれを含有してなる薄膜状成形体
JP2006083219A (ja) * 2004-09-14 2006-03-30 Sharp Corp 蛍光体およびこれを用いた発光装置
JP2012530365A (ja) * 2009-06-17 2012-11-29 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング オプトエレクトロニクス半導体部品

Family Cites Families (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5019748A (en) * 1986-12-12 1991-05-28 E-Lite Technologies, Inc. Method for making an electroluminescent panel lamp as well as panel lamp produced thereby
WO1996035223A1 (en) * 1995-04-29 1996-11-07 Orion Electric Co., Ltd. Dry-powdered, silica-coated phosphor particles on crt screens and its manufacturing
KR100240432B1 (ko) * 1996-05-22 2000-01-15 이주현 교류 분말 일렉트로루미네센스 소자의 제조 방법 및 소자 구조
JPH1115415A (ja) * 1997-06-16 1999-01-22 Minnesota Mining & Mfg Co <3M> 自発光可能な再帰性反射シートおよびその製造方法
US6319425B1 (en) * 1997-07-07 2001-11-20 Asahi Rubber Inc. Transparent coating member for light-emitting diodes and a fluorescent color light source
US6617784B1 (en) * 1998-06-08 2003-09-09 3M Innovative Properties Company Electroluminescent device and method for producing the same
US6479941B1 (en) * 1998-10-30 2002-11-12 3M Innovative Properties Company Electroluminescent device and method for the production of the same
US6613455B1 (en) * 1999-01-14 2003-09-02 3M Innovative Properties Company Electroluminescent device and method for producing same
JP2001144331A (ja) * 1999-09-02 2001-05-25 Toyoda Gosei Co Ltd 発光装置
JP4283424B2 (ja) * 2000-07-10 2009-06-24 株式会社資生堂 偽変造防止用素材
US6635363B1 (en) * 2000-08-21 2003-10-21 General Electric Company Phosphor coating with self-adjusting distance from LED chip
US20020063520A1 (en) * 2000-11-29 2002-05-30 Huei-Che Yu Pre-formed fluorescent plate - LED device
KR100685917B1 (ko) * 2000-12-27 2007-02-22 엘지.필립스 엘시디 주식회사 전계발광소자 및 그 제조방법
EP1433155A2 (en) * 2001-04-30 2004-06-30 Lumimove, Inc. Electroluminescent devices fabricated with encapsulated light emitting polymer particles
US6833669B2 (en) * 2001-06-25 2004-12-21 E-Lite Technologies, Inc. Method and apparatus for making large-scale laminated foil-back electroluminescent lamp material, as well as the electroluminescent lamps and strip lamps produced therefrom
WO2003034508A1 (fr) * 2001-10-12 2003-04-24 Nichia Corporation Dispositif d'emission de lumiere et procede de fabrication de celui-ci
US7479662B2 (en) * 2002-08-30 2009-01-20 Lumination Llc Coated LED with improved efficiency
CN1813498A (zh) * 2003-07-02 2006-08-02 松下电器产业株式会社 发光元件及显示装置
US7102152B2 (en) * 2004-10-14 2006-09-05 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Device and method for emitting output light using quantum dots and non-quantum fluorescent material
US7298078B2 (en) * 2004-01-14 2007-11-20 E-Lite Technologies, Inc. Flat, flexible fluorescent lamp
US7148623B2 (en) * 2004-06-28 2006-12-12 Vladimir Vlaskin Flexible electroluminescent material
DE102004036157B4 (de) * 2004-07-26 2023-03-16 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Elektromagnetische Strahlung emittierendes optoelektronisches Bauelement und Leuchtmodul
DE102004060358A1 (de) * 2004-09-30 2006-04-13 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen von Lumineszenzdiodenchips und Lumineszenzdiodenchip
CN101129095B (zh) * 2005-02-17 2014-07-09 皇家飞利浦电子股份有限公司 包括发绿光的陶瓷发光转换器的照明系统
DE102005019376A1 (de) * 2005-04-26 2006-11-02 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Lumineszenzkonversions-LED
JPWO2007018039A1 (ja) * 2005-08-05 2009-02-19 パナソニック株式会社 半導体発光装置
DE102005063106A1 (de) * 2005-12-30 2007-07-05 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Optoelektronischer Halbleiterchip und optoelektronisches Bauelement mit solch einem Halbleiterchip
US7682850B2 (en) * 2006-03-17 2010-03-23 Philips Lumileds Lighting Company, Llc White LED for backlight with phosphor plates
US8469760B2 (en) * 2006-03-31 2013-06-25 Dowa Electronics Materials Co., Ltd. Light emitting device and method for producing same
DE102006026481A1 (de) * 2006-06-07 2007-12-13 Siemens Ag Verfahren zum Anordnen einer Pulverschicht auf einem Substrat sowie Schichtaufbau mit mindestens einer Pulverschicht auf einem Substrat
US7521862B2 (en) * 2006-11-20 2009-04-21 Philips Lumileds Lighting Co., Llc Light emitting device including luminescent ceramic and light-scattering material
JP4859050B2 (ja) * 2006-11-28 2012-01-18 Ｄｏｗａエレクトロニクス株式会社 発光装置及びその製造方法
JP5212777B2 (ja) * 2007-11-28 2013-06-19 スタンレー電気株式会社 半導体発光装置及び照明装置
KR100956888B1 (ko) * 2008-01-24 2010-05-11 삼성전기주식회사 발광 다이오드 패키지 및 그 제조 방법
WO2009116259A1 (ja) * 2008-03-17 2009-09-24 パナソニック株式会社 発光素子
JP5616886B2 (ja) * 2008-07-01 2014-10-29 コーニンクレッカ フィリップス エヌ ヴェ 非変換光の発光が少ない、波長を変換する発光ダイオード
WO2010017148A1 (en) * 2008-08-04 2010-02-11 Soraa, Inc. White light devices using non-polar or semipolar gallium containing materials and phosphors
WO2010017831A1 (de) * 2008-08-11 2010-02-18 Osram Gesellschaft mit beschränkter Haftung Konversions led
US8342720B2 (en) * 2008-10-10 2013-01-01 Stanley Electric Co., Ltd. Vehicle light and road illumination device
JP5280818B2 (ja) * 2008-11-28 2013-09-04 シャープ株式会社 発光装置
CN101814405B (zh) * 2009-02-24 2012-04-25 夏普株式会社 电子发射元件及其制造方法、使用电子发射元件的各装置
US8323748B2 (en) * 2009-05-15 2012-12-04 Achrolux Inc. Methods for forming uniform particle layers of phosphor material on a surface
US20110062470A1 (en) * 2009-09-17 2011-03-17 Koninklijke Philips Electronics N.V. Reduced angular emission cone illumination leds
DE102009051748A1 (de) * 2009-11-03 2011-05-05 Osram Opto Semiconductors Gmbh Verfahren und Vorrichtung zur Herstellung eines strahlungsemittierenden Halbleiterbauelements und strahlungsemittierendes Halbleiterbauelement
DE102010021791A1 (de) * 2010-05-27 2011-12-01 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements und eines Verbunds
JP5701523B2 (ja) * 2010-06-22 2015-04-15 日東電工株式会社 半導体発光装置
JP5437177B2 (ja) * 2010-06-25 2014-03-12 パナソニック株式会社 発光装置
JP2012033823A (ja) * 2010-08-02 2012-02-16 Stanley Electric Co Ltd 発光装置およびその製造方法
DE102010035490A1 (de) * 2010-08-26 2012-03-01 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Bauelement und Verfahren zur Herstellung eines strahlungsemittierenden Bauelements
KR20120024104A (ko) * 2010-09-06 2012-03-14 서울옵토디바이스주식회사 발광 소자
US8581287B2 (en) * 2011-01-24 2013-11-12 Stanley Electric Co., Ltd. Semiconductor light emitting device having a reflective material, wavelength converting layer and optical plate with rough and plane surface regions, and method of manufacturing
WO2012137552A1 (ja) * 2011-04-05 2012-10-11 三井金属鉱業株式会社 発光デバイス
KR20130014256A (ko) * 2011-07-29 2013-02-07 엘지이노텍 주식회사 발광 소자 패키지 및 이를 이용한 조명 시스템
DE202011107213U1 (de) * 2011-10-27 2011-12-16 Rudi Danz Optische Isolatoren mit spektraler Lichtwandlung und Erzeugung von Laserstrahlung
US20130187540A1 (en) * 2012-01-24 2013-07-25 Michael A. Tischler Discrete phosphor chips for light-emitting devices and related methods

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08148717A (ja) * 1994-11-15 1996-06-07 Nichia Chem Ind Ltd 青色発光ダイオード
JP2003286292A (ja) * 2002-01-28 2003-10-10 Mitsubishi Chemicals Corp 半導体超微粒子及びそれを含有してなる薄膜状成形体
JP2006083219A (ja) * 2004-09-14 2006-03-30 Sharp Corp 蛍光体およびこれを用いた発光装置
JP2012530365A (ja) * 2009-06-17 2012-11-29 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング オプトエレクトロニクス半導体部品

Also Published As

Publication number Publication date
CN105009312A (zh) 2015-10-28
DE102013102482A1 (de) 2014-10-02
KR20150127133A (ko) 2015-11-16
CN105009312B (zh) 2018-05-22
WO2014139834A1 (de) 2014-09-18
US20160013369A1 (en) 2016-01-14

Similar Documents

Publication Publication Date Title
JP2016510178A (ja) オプトエレクトロニクス部品及びオプトエレクトロニクス部品の製造方法
US10411175B2 (en) Light emitting element package and method of manufacturing the same
TWI700682B (zh) 半導體模組、顯示裝置、及半導體模組的製造方法
CN100370630C (zh) 发光元件及其制造方法
US7838876B2 (en) Optoelectronic semiconductor device in which current spreading layer of sol gel material mixed with nanoparticles is mixed with wavelength conversion dyes
US8809900B2 (en) Light emitting diode device and producing method thereof
US20140252388A1 (en) Semiconductor light emitting element and method for manufacturing same
CN103109383A (zh) 光电子器件和用于制造所述光电子器件的方法
US8890190B2 (en) Light-emitting diode element in which an optical semiconductor element is encapsulated by an encapsulating resin layer containing a light reflection component
KR20100077213A (ko) 반도체 발광장치 및 반도체 발광장치의 제조방법
KR20120110050A (ko) 발광 다이오드 장치의 제조 방법 및 발광 다이오드 소자
CN107104097B (zh) 光电子器件和用于制造光电子器件的方法
CN103390720B (zh) 发光器件
US10141482B2 (en) Semiconductor light emitting device
US20150287892A1 (en) Light emitting device
KR20110080318A (ko) 발광 소자 패키지
KR20150095430A (ko) 발광다이오드 패키지 및 이를 이용한 발광소자
CN118901135A (zh) 多芯片发光二极管封装的布置
US8642362B2 (en) Method for producing light-emitting diode device
US20260020395A1 (en) Light-emitting device and method of manufacturing light-emitting device
KR20170131724A (ko) 반도체 소자 그리고 반도체 소자를 제조하기 위한 방법
US11996502B2 (en) Method of manufacturing light-emitting device including step of curing sealing member while applying centrifugal force
KR20230128361A (ko) 엣지 영역에 금 층을 갖는 광전자 반도체 컴포넌트
JP2025099548A (ja) 発光装置
KR101223051B1 (ko) 엘이디 패키지

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20151106

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20160817

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20160912

A524 Written submission of copy of amendment under article 19 pct

Free format text: JAPANESE INTERMEDIATE CODE: A524

Effective date: 20161212

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20170206