DE102013102482A1 - Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements - Google Patents

Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements Download PDF

Info

Publication number
DE102013102482A1
DE102013102482A1 DE102013102482.3A DE102013102482A DE102013102482A1 DE 102013102482 A1 DE102013102482 A1 DE 102013102482A1 DE 102013102482 A DE102013102482 A DE 102013102482A DE 102013102482 A1 DE102013102482 A1 DE 102013102482A1
Authority
DE
Germany
Prior art keywords
semiconductor layer
optoelectronic component
conversion element
layer
layer sequence
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE102013102482.3A
Other languages
German (de)
English (en)
Inventor
Kathy Schmidtke
Ion Stoll
Tony Albrecht
Markus Klein
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Priority to DE102013102482.3A priority Critical patent/DE102013102482A1/de
Priority to US14/769,699 priority patent/US20160013369A1/en
Priority to KR1020157026557A priority patent/KR20150127133A/ko
Priority to JP2015562021A priority patent/JP2016510178A/ja
Priority to PCT/EP2014/054147 priority patent/WO2014139834A1/de
Priority to CN201480014154.4A priority patent/CN105009312B/zh
Publication of DE102013102482A1 publication Critical patent/DE102013102482A1/de
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8515—Wavelength conversion means not being in contact with the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/853—Encapsulations characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/034—Manufacture or treatment of coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0362—Manufacture or treatment of packages of encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins

Landscapes

  • Led Device Packages (AREA)
DE102013102482.3A 2013-03-12 2013-03-12 Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements Withdrawn DE102013102482A1 (de)

Priority Applications (6)

Application Number Priority Date Filing Date Title
DE102013102482.3A DE102013102482A1 (de) 2013-03-12 2013-03-12 Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
US14/769,699 US20160013369A1 (en) 2013-03-12 2014-03-04 Optoelectronic Component And Method For Producing An Optoelectronic Component
KR1020157026557A KR20150127133A (ko) 2013-03-12 2014-03-04 광전 소자 및 광전 소자를 제조하기 위한 방법
JP2015562021A JP2016510178A (ja) 2013-03-12 2014-03-04 オプトエレクトロニクス部品及びオプトエレクトロニクス部品の製造方法
PCT/EP2014/054147 WO2014139834A1 (de) 2013-03-12 2014-03-04 Optoelektronisches bauelement und verfahren zur herstellung eines optoelektronischen bauelements
CN201480014154.4A CN105009312B (zh) 2013-03-12 2014-03-04 光电子器件和用于制造光电子器件的方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102013102482.3A DE102013102482A1 (de) 2013-03-12 2013-03-12 Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements

Publications (1)

Publication Number Publication Date
DE102013102482A1 true DE102013102482A1 (de) 2014-10-02

Family

ID=50345986

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102013102482.3A Withdrawn DE102013102482A1 (de) 2013-03-12 2013-03-12 Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements

Country Status (6)

Country Link
US (1) US20160013369A1 (https=)
JP (1) JP2016510178A (https=)
KR (1) KR20150127133A (https=)
CN (1) CN105009312B (https=)
DE (1) DE102013102482A1 (https=)
WO (1) WO2014139834A1 (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014106073A1 (de) * 2014-04-30 2015-11-05 Osram Opto Semiconductors Gmbh Vorrichtung mit einer lichtemittierenden Diode
DE102017104144A1 (de) 2017-02-28 2018-08-30 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von Leuchtdioden und Leuchtdiode
WO2025119615A1 (de) * 2023-12-04 2025-06-12 Ams-Osram International Gmbh Optoelektronisches bauelement und verfahren zur herstellung eines optoelektronischen bauelements

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016092271A (ja) * 2014-11-06 2016-05-23 シャープ株式会社 蛍光体シートおよび照明装置
WO2019027952A1 (en) * 2017-08-03 2019-02-07 Lumileds Llc METHOD FOR MANUFACTURING A LIGHT EMITTING DEVICE
DE102017121185A1 (de) * 2017-09-13 2019-03-14 Osram Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
FR3089351B1 (fr) * 2018-11-30 2022-07-22 Commissariat Energie Atomique DISPOSITIF OPTOELECTRONIQUE A DIODE ELECTROLUMINESCENTE EMETTANT DANS l’ULTRAVIOLET SUR LAQUELLE EST AGENCE UN DISPOSITIF OPTIQUE
CN111370563A (zh) * 2018-12-25 2020-07-03 弗洛里光电材料（苏州）有限公司 复合荧光胶膜及其应用
CN115498420B (zh) * 2022-08-15 2024-06-25 电子科技大学 基于钛酸锶复合材料的太赫兹吸波器与制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009051748A1 (de) * 2009-11-03 2011-05-05 Osram Opto Semiconductors Gmbh Verfahren und Vorrichtung zur Herstellung eines strahlungsemittierenden Halbleiterbauelements und strahlungsemittierendes Halbleiterbauelement
DE202011107213U1 (de) * 2011-10-27 2011-12-16 Rudi Danz Optische Isolatoren mit spektraler Lichtwandlung und Erzeugung von Laserstrahlung
DE102010035490A1 (de) * 2010-08-26 2012-03-01 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Bauelement und Verfahren zur Herstellung eines strahlungsemittierenden Bauelements

Family Cites Families (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5019748A (en) * 1986-12-12 1991-05-28 E-Lite Technologies, Inc. Method for making an electroluminescent panel lamp as well as panel lamp produced thereby
JP3009091B2 (ja) * 1994-11-15 2000-02-14 日亜化学工業株式会社 青色発光ダイオード
WO1996035223A1 (en) * 1995-04-29 1996-11-07 Orion Electric Co., Ltd. Dry-powdered, silica-coated phosphor particles on crt screens and its manufacturing
KR100240432B1 (ko) * 1996-05-22 2000-01-15 이주현 교류 분말 일렉트로루미네센스 소자의 제조 방법 및 소자 구조
JPH1115415A (ja) * 1997-06-16 1999-01-22 Minnesota Mining & Mfg Co <3M> 自発光可能な再帰性反射シートおよびその製造方法
US6319425B1 (en) * 1997-07-07 2001-11-20 Asahi Rubber Inc. Transparent coating member for light-emitting diodes and a fluorescent color light source
US6617784B1 (en) * 1998-06-08 2003-09-09 3M Innovative Properties Company Electroluminescent device and method for producing the same
US6479941B1 (en) * 1998-10-30 2002-11-12 3M Innovative Properties Company Electroluminescent device and method for the production of the same
US6613455B1 (en) * 1999-01-14 2003-09-02 3M Innovative Properties Company Electroluminescent device and method for producing same
JP2001144331A (ja) * 1999-09-02 2001-05-25 Toyoda Gosei Co Ltd 発光装置
JP4283424B2 (ja) * 2000-07-10 2009-06-24 株式会社資生堂 偽変造防止用素材
US6635363B1 (en) * 2000-08-21 2003-10-21 General Electric Company Phosphor coating with self-adjusting distance from LED chip
US20020063520A1 (en) * 2000-11-29 2002-05-30 Huei-Che Yu Pre-formed fluorescent plate - LED device
KR100685917B1 (ko) * 2000-12-27 2007-02-22 엘지.필립스 엘시디 주식회사 전계발광소자 및 그 제조방법
EP1433155A2 (en) * 2001-04-30 2004-06-30 Lumimove, Inc. Electroluminescent devices fabricated with encapsulated light emitting polymer particles
US6833669B2 (en) * 2001-06-25 2004-12-21 E-Lite Technologies, Inc. Method and apparatus for making large-scale laminated foil-back electroluminescent lamp material, as well as the electroluminescent lamps and strip lamps produced therefrom
WO2003034508A1 (fr) * 2001-10-12 2003-04-24 Nichia Corporation Dispositif d'emission de lumiere et procede de fabrication de celui-ci
JP2003286292A (ja) * 2002-01-28 2003-10-10 Mitsubishi Chemicals Corp 半導体超微粒子及びそれを含有してなる薄膜状成形体
US7479662B2 (en) * 2002-08-30 2009-01-20 Lumination Llc Coated LED with improved efficiency
CN1813498A (zh) * 2003-07-02 2006-08-02 松下电器产业株式会社 发光元件及显示装置
US7102152B2 (en) * 2004-10-14 2006-09-05 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Device and method for emitting output light using quantum dots and non-quantum fluorescent material
US7298078B2 (en) * 2004-01-14 2007-11-20 E-Lite Technologies, Inc. Flat, flexible fluorescent lamp
US7148623B2 (en) * 2004-06-28 2006-12-12 Vladimir Vlaskin Flexible electroluminescent material
DE102004036157B4 (de) * 2004-07-26 2023-03-16 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Elektromagnetische Strahlung emittierendes optoelektronisches Bauelement und Leuchtmodul
JP2006083219A (ja) * 2004-09-14 2006-03-30 Sharp Corp 蛍光体およびこれを用いた発光装置
DE102004060358A1 (de) * 2004-09-30 2006-04-13 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen von Lumineszenzdiodenchips und Lumineszenzdiodenchip
CN101129095B (zh) * 2005-02-17 2014-07-09 皇家飞利浦电子股份有限公司 包括发绿光的陶瓷发光转换器的照明系统
DE102005019376A1 (de) * 2005-04-26 2006-11-02 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Lumineszenzkonversions-LED
JPWO2007018039A1 (ja) * 2005-08-05 2009-02-19 パナソニック株式会社 半導体発光装置
DE102005063106A1 (de) * 2005-12-30 2007-07-05 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Optoelektronischer Halbleiterchip und optoelektronisches Bauelement mit solch einem Halbleiterchip
US7682850B2 (en) * 2006-03-17 2010-03-23 Philips Lumileds Lighting Company, Llc White LED for backlight with phosphor plates
US8469760B2 (en) * 2006-03-31 2013-06-25 Dowa Electronics Materials Co., Ltd. Light emitting device and method for producing same
DE102006026481A1 (de) * 2006-06-07 2007-12-13 Siemens Ag Verfahren zum Anordnen einer Pulverschicht auf einem Substrat sowie Schichtaufbau mit mindestens einer Pulverschicht auf einem Substrat
US7521862B2 (en) * 2006-11-20 2009-04-21 Philips Lumileds Lighting Co., Llc Light emitting device including luminescent ceramic and light-scattering material
JP4859050B2 (ja) * 2006-11-28 2012-01-18 Ｄｏｗａエレクトロニクス株式会社 発光装置及びその製造方法
JP5212777B2 (ja) * 2007-11-28 2013-06-19 スタンレー電気株式会社 半導体発光装置及び照明装置
KR100956888B1 (ko) * 2008-01-24 2010-05-11 삼성전기주식회사 발광 다이오드 패키지 및 그 제조 방법
WO2009116259A1 (ja) * 2008-03-17 2009-09-24 パナソニック株式会社 発光素子
JP5616886B2 (ja) * 2008-07-01 2014-10-29 コーニンクレッカ フィリップス エヌ ヴェ 非変換光の発光が少ない、波長を変換する発光ダイオード
WO2010017148A1 (en) * 2008-08-04 2010-02-11 Soraa, Inc. White light devices using non-polar or semipolar gallium containing materials and phosphors
WO2010017831A1 (de) * 2008-08-11 2010-02-18 Osram Gesellschaft mit beschränkter Haftung Konversions led
US8342720B2 (en) * 2008-10-10 2013-01-01 Stanley Electric Co., Ltd. Vehicle light and road illumination device
JP5280818B2 (ja) * 2008-11-28 2013-09-04 シャープ株式会社 発光装置
CN101814405B (zh) * 2009-02-24 2012-04-25 夏普株式会社 电子发射元件及其制造方法、使用电子发射元件的各装置
US8323748B2 (en) * 2009-05-15 2012-12-04 Achrolux Inc. Methods for forming uniform particle layers of phosphor material on a surface
DE102009025266B4 (de) * 2009-06-17 2015-08-20 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil
US20110062470A1 (en) * 2009-09-17 2011-03-17 Koninklijke Philips Electronics N.V. Reduced angular emission cone illumination leds
DE102010021791A1 (de) * 2010-05-27 2011-12-01 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements und eines Verbunds
JP5701523B2 (ja) * 2010-06-22 2015-04-15 日東電工株式会社 半導体発光装置
JP5437177B2 (ja) * 2010-06-25 2014-03-12 パナソニック株式会社 発光装置
JP2012033823A (ja) * 2010-08-02 2012-02-16 Stanley Electric Co Ltd 発光装置およびその製造方法
KR20120024104A (ko) * 2010-09-06 2012-03-14 서울옵토디바이스주식회사 발광 소자
US8581287B2 (en) * 2011-01-24 2013-11-12 Stanley Electric Co., Ltd. Semiconductor light emitting device having a reflective material, wavelength converting layer and optical plate with rough and plane surface regions, and method of manufacturing
WO2012137552A1 (ja) * 2011-04-05 2012-10-11 三井金属鉱業株式会社 発光デバイス
KR20130014256A (ko) * 2011-07-29 2013-02-07 엘지이노텍 주식회사 발광 소자 패키지 및 이를 이용한 조명 시스템
US20130187540A1 (en) * 2012-01-24 2013-07-25 Michael A. Tischler Discrete phosphor chips for light-emitting devices and related methods

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009051748A1 (de) * 2009-11-03 2011-05-05 Osram Opto Semiconductors Gmbh Verfahren und Vorrichtung zur Herstellung eines strahlungsemittierenden Halbleiterbauelements und strahlungsemittierendes Halbleiterbauelement
DE102010035490A1 (de) * 2010-08-26 2012-03-01 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Bauelement und Verfahren zur Herstellung eines strahlungsemittierenden Bauelements
DE202011107213U1 (de) * 2011-10-27 2011-12-16 Rudi Danz Optische Isolatoren mit spektraler Lichtwandlung und Erzeugung von Laserstrahlung

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014106073A1 (de) * 2014-04-30 2015-11-05 Osram Opto Semiconductors Gmbh Vorrichtung mit einer lichtemittierenden Diode
DE102017104144A1 (de) 2017-02-28 2018-08-30 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von Leuchtdioden und Leuchtdiode
US11101402B2 (en) 2017-02-28 2021-08-24 Osram Oled Gmbh Method of manufacturing light emitting diodes and light emitting diode
DE102017104144B4 (de) 2017-02-28 2022-01-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung von Leuchtdioden
DE102017104144B9 (de) 2017-02-28 2022-03-10 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung von Leuchtdioden
WO2025119615A1 (de) * 2023-12-04 2025-06-12 Ams-Osram International Gmbh Optoelektronisches bauelement und verfahren zur herstellung eines optoelektronischen bauelements

Also Published As

Publication number Publication date
CN105009312A (zh) 2015-10-28
JP2016510178A (ja) 2016-04-04
KR20150127133A (ko) 2015-11-16
CN105009312B (zh) 2018-05-22
WO2014139834A1 (de) 2014-09-18
US20160013369A1 (en) 2016-01-14

Similar Documents

Publication Publication Date Title
DE102013102482A1 (de) Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
EP1644990B1 (de) Licht emittierendes bauelement mit einem lumineszenz-konversionselement
DE112014005954B4 (de) Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils
EP1770794B1 (de) Optoelektronische Halbleiterchip, Verfahren zu dessen Herstellung und optoelektronisches Bauteil
EP2617070A1 (de) Optoelektronisches bauelement und verfahren zu dessen herstellung
WO2007134582A1 (de) Optoelektronischer halbleiterchip mit einem wellenlängenkonversionsstoff sowie optoelektronisches halbleiterbauelement mit einem solchen halbleiterchip und verfahren zur herstellung des optoelektronischen halbleiterchips
WO2011104364A1 (de) Strahlungsemittierendes bauelement mit einem halbleiterchip und einem konversionselement und verfahren zu dessen herstellung
EP3251156A1 (de) Optoelektronisches halbleiterbauelement und verfahren zu dessen herstellung
DE102011113962B4 (de) Verfahren zur Herstellung eines keramischen Konversionselements
DE102009025266A1 (de) Optoelektronisches Halbleiterbauteil
EP2652806A1 (de) Verfahren zum erzeugen einer lumineszenzkonversionsstoffschicht, zusammensetzung hierfür und bauelement umfassend eine solche lumineszenzkonversionsstoffschicht
WO2009039816A1 (de) Strahlungsemittierendes bauelement mit glasabdeckung und verfahren zu dessen herstellung
WO2014072255A1 (de) Konvertermaterial, verfahren zur herstellung eines konvertermaterials und optoelektronisches bauelement
DE112011104415T5 (de) Hochleistungs-LEDs mit Linsen aus nichtpolymerem Material und Verfahren zur Herstellung derselben
WO2017025437A1 (de) Optoelektronisches bauelement umfassend ein konversionselement, verfahren zur herstellung eines optoelektronischen bauelements umfassend ein konversionselement und verwendung eines optoelektronischen bauelements umfassend ein konversionselement
DE102004040277B4 (de) Reflektierendes Schichtsystem mit einer Mehrzahl von Schichten zur Aufbringung auf ein III/V-Verbindungshalbleitermaterial
WO2015124621A1 (de) Optoelektronisches bauelement
DE102017104127A1 (de) Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
DE112019003634T5 (de) Optoelektronisches bauelement und das verfahren zur herstellung eines optoeklektronischen bauelements
WO2016087444A1 (de) Strahlungsemittierendes optoelektronisches halbleiterbauteil und verfahren zu dessen herstellung
DE112017000624B4 (de) Licht emittierende Vorrichtung und Verfahren zu deren Herstellung
DE102011056810A1 (de) Optoelektronisches Halbleiterbauelement
DE102009055765A1 (de) Optisches oder optoelektronisches Bauelement und Verfahren zu dessen Herstellung
WO2019052891A1 (de) Optoelektronisches bauelement und verfahren zur herstellung eines optoelektronischen bauelements
WO2015181164A1 (de) Konverterelement zur konvertierung einer wellenlänge, optoelektronisches bauelement mit konverterelement und verfahren zum herstellen eines konverterelements

Legal Events

Date Code Title Description
R163 Identified publications notified
R012 Request for examination validly filed
R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee