JP2016207869A - エピタキシャルウェーハ及び発光ダイオード - Google Patents

エピタキシャルウェーハ及び発光ダイオード Download PDF

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Publication number
JP2016207869A
JP2016207869A JP2015088780A JP2015088780A JP2016207869A JP 2016207869 A JP2016207869 A JP 2016207869A JP 2015088780 A JP2015088780 A JP 2015088780A JP 2015088780 A JP2015088780 A JP 2015088780A JP 2016207869 A JP2016207869 A JP 2016207869A
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JP
Japan
Prior art keywords
layer
light emitting
epitaxial wafer
emitting diode
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2015088780A
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English (en)
Japanese (ja)
Inventor
健滋 酒井
Kenji Sakai
健滋 酒井
池田　淳
Atsushi Ikeda
淳 池田
実 川原
Minoru Kawahara
実 川原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Priority to JP2015088780A priority Critical patent/JP2016207869A/ja
Priority to CN201610130003.6A priority patent/CN106067494A/zh
Priority to TW105107503A priority patent/TWI672827B/zh
Publication of JP2016207869A publication Critical patent/JP2016207869A/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
JP2015088780A 2015-04-23 2015-04-23 エピタキシャルウェーハ及び発光ダイオード Pending JP2016207869A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2015088780A JP2016207869A (ja) 2015-04-23 2015-04-23 エピタキシャルウェーハ及び発光ダイオード
CN201610130003.6A CN106067494A (zh) 2015-04-23 2016-03-08 磊晶晶圆以及发光二极管
TW105107503A TWI672827B (zh) 2015-04-23 2016-03-11 磊晶晶圓以及發光二極體

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015088780A JP2016207869A (ja) 2015-04-23 2015-04-23 エピタキシャルウェーハ及び発光ダイオード

Publications (1)

Publication Number Publication Date
JP2016207869A true JP2016207869A (ja) 2016-12-08

Family

ID=57419058

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015088780A Pending JP2016207869A (ja) 2015-04-23 2015-04-23 エピタキシャルウェーハ及び発光ダイオード

Country Status (3)

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JP (1) JP2016207869A (zh)
CN (1) CN106067494A (zh)
TW (1) TWI672827B (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI742714B (zh) * 2019-06-11 2021-10-11 全新光電科技股份有限公司 半導體雷射二極體

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10154844A (ja) * 1996-11-26 1998-06-09 Fujitsu Ltd 半導体レーザ
JP2001044556A (ja) * 1999-07-29 2001-02-16 Hitachi Ltd 半導体レーザ及びその製造方法
JP2002027831A (ja) * 2000-05-11 2002-01-29 Kansai Tlo Kk 植物育成用ｌｅｄ光源
US20040021142A1 (en) * 2002-07-30 2004-02-05 Li-Hsin Kuo Light emitting diode device
JP2009177058A (ja) * 2008-01-28 2009-08-06 Hitachi Ltd 半導体レーザ装置
JP2012018986A (ja) * 2010-07-06 2012-01-26 Showa Denko Kk 発光ダイオード用エピタキシャルウェーハ
JP2012043943A (ja) * 2010-08-18 2012-03-01 Showa Denko Kk 発光ダイオード及び発光ダイオードランプ
JP2015002683A (ja) * 2013-06-19 2015-01-08 日本電信電話株式会社 微細藻類または代謝生成物の濃度決定方法およびシステム

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002111053A (ja) * 2000-10-02 2002-04-12 Sharp Corp 半導体発光素子

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10154844A (ja) * 1996-11-26 1998-06-09 Fujitsu Ltd 半導体レーザ
JP2001044556A (ja) * 1999-07-29 2001-02-16 Hitachi Ltd 半導体レーザ及びその製造方法
JP2002027831A (ja) * 2000-05-11 2002-01-29 Kansai Tlo Kk 植物育成用ｌｅｄ光源
US20040021142A1 (en) * 2002-07-30 2004-02-05 Li-Hsin Kuo Light emitting diode device
JP2009177058A (ja) * 2008-01-28 2009-08-06 Hitachi Ltd 半導体レーザ装置
JP2012018986A (ja) * 2010-07-06 2012-01-26 Showa Denko Kk 発光ダイオード用エピタキシャルウェーハ
JP2012043943A (ja) * 2010-08-18 2012-03-01 Showa Denko Kk 発光ダイオード及び発光ダイオードランプ
JP2015002683A (ja) * 2013-06-19 2015-01-08 日本電信電話株式会社 微細藻類または代謝生成物の濃度決定方法およびシステム

Also Published As

Publication number Publication date
CN106067494A (zh) 2016-11-02
TW201639188A (zh) 2016-11-01
TWI672827B (zh) 2019-09-21

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