JP2016207869A - エピタキシャルウェーハ及び発光ダイオード - Google Patents

エピタキシャルウェーハ及び発光ダイオード Download PDF

Info

Publication number
JP2016207869A
JP2016207869A JP2015088780A JP2015088780A JP2016207869A JP 2016207869 A JP2016207869 A JP 2016207869A JP 2015088780 A JP2015088780 A JP 2015088780A JP 2015088780 A JP2015088780 A JP 2015088780A JP 2016207869 A JP2016207869 A JP 2016207869A
Authority
JP
Japan
Prior art keywords
layer
light emitting
epitaxial wafer
emitting diode
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2015088780A
Other languages
English (en)
Japanese (ja)
Inventor
健滋 酒井
Kenji Sakai
健滋 酒井
池田　淳
Atsushi Ikeda
淳 池田
実 川原
Minoru Kawahara
実 川原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Priority to JP2015088780A priority Critical patent/JP2016207869A/ja
Priority to CN201610130003.6A priority patent/CN106067494A/zh
Priority to TW105107503A priority patent/TWI672827B/zh
Publication of JP2016207869A publication Critical patent/JP2016207869A/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
JP2015088780A 2015-04-23 2015-04-23 エピタキシャルウェーハ及び発光ダイオード Pending JP2016207869A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2015088780A JP2016207869A (ja) 2015-04-23 2015-04-23 エピタキシャルウェーハ及び発光ダイオード
CN201610130003.6A CN106067494A (zh) 2015-04-23 2016-03-08 磊晶晶圆以及发光二极管
TW105107503A TWI672827B (zh) 2015-04-23 2016-03-11 磊晶晶圓以及發光二極體

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015088780A JP2016207869A (ja) 2015-04-23 2015-04-23 エピタキシャルウェーハ及び発光ダイオード

Publications (1)

Publication Number Publication Date
JP2016207869A true JP2016207869A (ja) 2016-12-08

Family

ID=57419058

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015088780A Pending JP2016207869A (ja) 2015-04-23 2015-04-23 エピタキシャルウェーハ及び発光ダイオード

Country Status (3)

Country Link
JP (1) JP2016207869A (zh)
CN (1) CN106067494A (zh)
TW (1) TWI672827B (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI742714B (zh) * 2019-06-11 2021-10-11 全新光電科技股份有限公司 半導體雷射二極體

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10154844A (ja) * 1996-11-26 1998-06-09 Fujitsu Ltd 半導体レーザ
JP2001044556A (ja) * 1999-07-29 2001-02-16 Hitachi Ltd 半導体レーザ及びその製造方法
JP2002027831A (ja) * 2000-05-11 2002-01-29 Kansai Tlo Kk 植物育成用ｌｅｄ光源
US20040021142A1 (en) * 2002-07-30 2004-02-05 Li-Hsin Kuo Light emitting diode device
JP2009177058A (ja) * 2008-01-28 2009-08-06 Hitachi Ltd 半導体レーザ装置
JP2012018986A (ja) * 2010-07-06 2012-01-26 Showa Denko Kk 発光ダイオード用エピタキシャルウェーハ
JP2012043943A (ja) * 2010-08-18 2012-03-01 Showa Denko Kk 発光ダイオード及び発光ダイオードランプ
JP2015002683A (ja) * 2013-06-19 2015-01-08 日本電信電話株式会社 微細藻類または代謝生成物の濃度決定方法およびシステム

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002111053A (ja) * 2000-10-02 2002-04-12 Sharp Corp 半導体発光素子

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10154844A (ja) * 1996-11-26 1998-06-09 Fujitsu Ltd 半導体レーザ
JP2001044556A (ja) * 1999-07-29 2001-02-16 Hitachi Ltd 半導体レーザ及びその製造方法
JP2002027831A (ja) * 2000-05-11 2002-01-29 Kansai Tlo Kk 植物育成用ｌｅｄ光源
US20040021142A1 (en) * 2002-07-30 2004-02-05 Li-Hsin Kuo Light emitting diode device
JP2009177058A (ja) * 2008-01-28 2009-08-06 Hitachi Ltd 半導体レーザ装置
JP2012018986A (ja) * 2010-07-06 2012-01-26 Showa Denko Kk 発光ダイオード用エピタキシャルウェーハ
JP2012043943A (ja) * 2010-08-18 2012-03-01 Showa Denko Kk 発光ダイオード及び発光ダイオードランプ
JP2015002683A (ja) * 2013-06-19 2015-01-08 日本電信電話株式会社 微細藻類または代謝生成物の濃度決定方法およびシステム

Also Published As

Publication number Publication date
TW201639188A (zh) 2016-11-01
CN106067494A (zh) 2016-11-02
TWI672827B (zh) 2019-09-21

Similar Documents

Publication Publication Date Title
JP5549338B2 (ja) 紫外光放射用窒素化合物半導体ｌｅｄおよびその製造方法
US7646027B2 (en) Group III nitride semiconductor stacked structure
JP2008288248A (ja) 半導体発光素子
JP2011009524A (ja) 発光素子及び発光素子の製造方法
JP2011082233A (ja) 発光素子
WO2014167773A1 (ja) 半導体発光素子及びその製造方法
JP5906001B2 (ja) 発光ダイオード用エピタキシャルウェーハ
KR20130022815A (ko) 질화물 반도체 발광소자 및 그 제조방법
JP2021019075A (ja) 発光装置の製造方法及び発光装置
JP2011054862A (ja) エピタキシャルウエハ、発光素子、エピタキシャルウエハの製造方法、及び発光素子の製造方法
KR20130102210A (ko) 질화물 반도체 발광소자 및 그 제조방법
JP4781028B2 (ja) Ｉｉｉ族窒化物半導体積層体及びｉｉｉ族窒化物半導体発光素子の製造方法
JP6153351B2 (ja) 半導体発光装置
US20180287015A1 (en) Semiconductor device
JP5684501B2 (ja) 発光ダイオード用エピタキシャルウェーハ
JP2016143771A (ja) エピタキシャルウエハ、半導体発光素子、発光装置及びエピタキシャルウエハの製造方法
TWI672827B (zh) 磊晶晶圓以及發光二極體
JP2006013463A (ja) Ｉｉｉ族窒化物半導体発光素子
JP2011176001A (ja) 発光素子及び発光素子の製造方法
WO2016098632A1 (ja) 発光素子
WO2016056171A1 (ja) 半導体発光素子
JP2015043468A (ja) 紫外半導体発光素子
KR100730755B1 (ko) 수직형 발광소자 제조 방법 및 그 수직형 발광소자
JP2004281825A (ja) 発光ダイオードの製造方法
JP2013042082A (ja) 半導体発光素子

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20170327

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20180129

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20180206

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20180402

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20180918

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20190205