JP2016191719A - 設計ベースデバイスリスク評価 - Google Patents
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- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
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- G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
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- G05B19/00—Programme-control systems
- G05B19/02—Programme-control systems electric
- G05B19/418—Total factory control, i.e. centrally controlling a plurality of machines, e.g. direct or distributed numerical control [DNC], flexible manufacturing systems [FMS], integrated manufacturing systems [IMS], computer integrated manufacturing [CIM]
- G05B19/41875—Total factory control, i.e. centrally controlling a plurality of machines, e.g. direct or distributed numerical control [DNC], flexible manufacturing systems [FMS], integrated manufacturing systems [IMS], computer integrated manufacturing [CIM] characterised by quality surveillance of production
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
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Abstract
【解決手段】クリティカル欠陥を利用して動的サンプリングを提供するための方法であって、ウェハ上の複数のクリティカルパターンタイプを特定すること(702)、前記特定されたクリティカルパターンタイプのそれぞれについて、計算されたリスクレベルおよび発生の頻度を利用してデバイスリスクレベルを確定すること(704)、デバイスの1つまたは複数の関連エクスカーションを特定すること(706)、1つまたは複数のデバイスエクスカーションの特定に応答して動的ウェハ選択を確定すること(708)、および、前記特定されたクリティカルパターンタイプの少なくとも一部を動的にサンプリングすること(710)を含む。
【選択図】図7
Description
本出願は、以下に挙げる出願(複数可)(「関連出願」)に関連し、これらの関連出願から利用可能でかつ有効な最先の出願日の利益を主張する(たとえば、仮特許出願以外の出願についての利用可能な最先の優先日を主張するか、または、関連出願(複数可)の親出願、祖父出願、曾祖父出願等のありとあらゆる出願に関する仮特許出願についての、米国特許法(USC35)119条(e)下における利益を主張する)。
[関連出願]
米国特許商標庁の法定外要件のため、本出願は、2011年2月22日に出願された、発明者としてAllen Park、Youseung Jin、Barry Saville、およびSungchan Choの名を挙げる「DESIGN−AWARE DEVICE ASSESSMENT AND COMPUTER−AIDED SEPARATION OF PARTICLE AND PATTERN DEFECT」という名称の米国仮特許出願、出願シリアル番号第61/445,164号の通常の(非仮の)特許出願を構成する。
Claims (8)
- クリティカル欠陥を利用して動的サンプリングを提供するための方法であって、
ウェハ上の複数のクリティカルパターンタイプを特定すること、
前記特定されたクリティカルパターンタイプのそれぞれについて、計算されたリスクレベルおよび発生の頻度を利用してデバイスリスクレベルを確定すること、
デバイスの1つまたは複数の関連エクスカーションを特定すること、
1つまたは複数のデバイスエクスカーションの特定に応答して動的ウェハ選択を確定すること、および、
前記特定されたクリティカルパターンタイプの少なくとも一部を動的にサンプリングすることを含む方法。 - 前記特定されたクリティカルパターンタイプの少なくとも一部を動的にサンプリングすることは、
前記クリティカルパターンタイプのそれぞれの発生の頻度およびクリティカリティに基づいて前記クリティカルパターンタイプの一部をサンプリングすることを含む請求項1に記載の方法。 - 前記特定されたクリティカルパターンタイプの少なくとも一部を動的にサンプリングすることは、
検査ツールを使用して、前記特定されたクリティカルパターンタイプの少なくとも一部を動的に検査することを含む請求項1に記載の方法。 - メモリデバイス内でリスク評価または収率相関を提供するための方法であって、
設計データを利用してデバイスの1つまたは複数の機能エリアに基づいて複数の領域を定義すること、
前記1つまたは複数の定義された領域に関して1つまたは複数の検査プロセスを実施すること、
前記1つまたは複数の検査プロセスからの検査データを利用して、所定のコントロール限界を下回る前記1つまたは複数の定義された領域の1つまたは複数のダイを特定すること、および、
収率損失に影響を及ぼす領域を、前記所定のコントロール限界を下回る前記1つまたは複数のダイを前記領域のそれぞれについてのインラインデータと比較することによって特定することを含む方法。 - 前記デバイスの前記1つまたは複数の機能エリアは、
前記デバイスの主要エリア、前記デバイスの冗長メモリエリア、または前記デバイスのダミーエリアの少なくとも1つを備える請求項4に記載の方法。 - 前記1つまたは複数の検査プロセスは、
暗視野検査または明視野検査の少なくとも一方を含む請求項4に記載の方法。 - 空間解析を使用してデバイス処理を監視するための方法であって、
1つまたは複数のプロセスステップの間で1つまたは複数のデバイスを検査することによってプロセス変動シグネチャを監視すること、
前記1つまたは複数のデバイスの1つまたは複数の関心のパターンを、設計ベース分類プロセスを使用して、監視されるプロセス変動に関連付けること、および、
前記1つまたは複数の関連付けされた関心のパターンを使用して、1つまたは複数の機器シグネチャを特定することを含む方法。 - 前記デバイスの欠陥マップから前記特定される1つまたは複数の機器シグネチャを減算することをさらに含む請求項7に記載の方法。
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US201161445164P | 2011-02-22 | 2011-02-22 | |
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US13/399,805 US8656323B2 (en) | 2011-02-22 | 2012-02-17 | Based device risk assessment |
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JP2013555475A Division JP5980237B2 (ja) | 2011-02-22 | 2012-02-20 | 設計ベースデバイスリスク評価 |
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JP2016191719A true JP2016191719A (ja) | 2016-11-10 |
JP2016191719A5 JP2016191719A5 (ja) | 2017-02-09 |
JP6329209B2 JP6329209B2 (ja) | 2018-05-23 |
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JP2016147718A Active JP6329209B2 (ja) | 2011-02-22 | 2016-07-27 | 設計ベースデバイスリスク評価 |
JP2018080437A Active JP6498337B2 (ja) | 2011-02-22 | 2018-04-19 | デバイス処理監視方法及び装置 |
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EP (1) | EP2678880A4 (ja) |
JP (3) | JP5980237B2 (ja) |
KR (4) | KR102212388B1 (ja) |
IL (1) | IL228063A (ja) |
SG (1) | SG192891A1 (ja) |
TW (1) | TWI468958B (ja) |
WO (1) | WO2012115912A2 (ja) |
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KR20140049514A (ko) | 2014-04-25 |
KR20190134834A (ko) | 2019-12-04 |
EP2678880A2 (en) | 2014-01-01 |
US8656323B2 (en) | 2014-02-18 |
JP2018139304A (ja) | 2018-09-06 |
US20120216169A1 (en) | 2012-08-23 |
TWI468958B (zh) | 2015-01-11 |
KR20180135102A (ko) | 2018-12-19 |
EP2678880A4 (en) | 2016-06-15 |
KR102051773B1 (ko) | 2019-12-03 |
IL228063A0 (en) | 2013-09-30 |
SG192891A1 (en) | 2013-09-30 |
KR101931834B1 (ko) | 2018-12-24 |
JP2014507808A (ja) | 2014-03-27 |
KR102212388B1 (ko) | 2021-02-08 |
JP6498337B2 (ja) | 2019-04-10 |
US10223492B1 (en) | 2019-03-05 |
IL228063A (en) | 2017-10-31 |
KR20210014756A (ko) | 2021-02-09 |
JP6329209B2 (ja) | 2018-05-23 |
WO2012115912A2 (en) | 2012-08-30 |
TW201250503A (en) | 2012-12-16 |
KR102351672B1 (ko) | 2022-01-13 |
WO2012115912A3 (en) | 2012-11-22 |
JP5980237B2 (ja) | 2016-08-31 |
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