JP2016181343A5 - - Google Patents
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- JP2016181343A5 JP2016181343A5 JP2015059693A JP2015059693A JP2016181343A5 JP 2016181343 A5 JP2016181343 A5 JP 2016181343A5 JP 2015059693 A JP2015059693 A JP 2015059693A JP 2015059693 A JP2015059693 A JP 2015059693A JP 2016181343 A5 JP2016181343 A5 JP 2016181343A5
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- 239000003990 capacitor Substances 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015059693A JP6424120B2 (ja) | 2015-03-23 | 2015-03-23 | 電源システム、プラズマ処理装置及び電源制御方法 |
| TW105107829A TWI700018B (zh) | 2015-03-23 | 2016-03-15 | 電源系統、電漿處理裝置及電源控制方法 |
| US15/075,505 US10056230B2 (en) | 2015-03-23 | 2016-03-21 | Power supply system, plasma processing apparatus and power supply control method |
| KR1020160033474A KR102283193B1 (ko) | 2015-03-23 | 2016-03-21 | 전원 시스템, 플라즈마 처리 장치 및 전원 제어 방법 |
| SG10201602251QA SG10201602251QA (en) | 2015-03-23 | 2016-03-22 | Power Supply System, Plasma Processing Apparatus And Power Supply Control Method |
| CN201610168860.5A CN105990088B (zh) | 2015-03-23 | 2016-03-23 | 电源系统、等离子体处理装置和电源控制方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015059693A JP6424120B2 (ja) | 2015-03-23 | 2015-03-23 | 電源システム、プラズマ処理装置及び電源制御方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016181343A JP2016181343A (ja) | 2016-10-13 |
| JP2016181343A5 true JP2016181343A5 (enExample) | 2018-02-08 |
| JP6424120B2 JP6424120B2 (ja) | 2018-11-14 |
Family
ID=56976250
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015059693A Active JP6424120B2 (ja) | 2015-03-23 | 2015-03-23 | 電源システム、プラズマ処理装置及び電源制御方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US10056230B2 (enExample) |
| JP (1) | JP6424120B2 (enExample) |
| KR (1) | KR102283193B1 (enExample) |
| CN (1) | CN105990088B (enExample) |
| SG (1) | SG10201602251QA (enExample) |
| TW (1) | TWI700018B (enExample) |
Families Citing this family (38)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6491888B2 (ja) * | 2015-01-19 | 2019-03-27 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法およびプラズマ処理装置 |
| US11227745B2 (en) * | 2018-08-10 | 2022-01-18 | Eagle Harbor Technologies, Inc. | Plasma sheath control for RF plasma reactors |
| WO2018008310A1 (ja) * | 2016-07-08 | 2018-01-11 | パナソニックＩｐマネジメント株式会社 | プラズマ放電装置及び空気清浄機 |
| JP7158131B2 (ja) * | 2017-05-30 | 2022-10-21 | 東京エレクトロン株式会社 | ステージ及びプラズマ処理装置 |
| US10510575B2 (en) * | 2017-09-20 | 2019-12-17 | Applied Materials, Inc. | Substrate support with multiple embedded electrodes |
| TWI783068B (zh) * | 2017-11-17 | 2022-11-11 | 瑞士商艾維太克股份有限公司 | 將ｒｆ功率從ｒｆ供應產生器傳送至至少一個真空電漿處理模組的方法、ｒｆ真空電漿處理模組、電漿處理設備及製造基板之方法 |
| US10555412B2 (en) | 2018-05-10 | 2020-02-04 | Applied Materials, Inc. | Method of controlling ion energy distribution using a pulse generator with a current-return output stage |
| US11810761B2 (en) | 2018-07-27 | 2023-11-07 | Eagle Harbor Technologies, Inc. | Nanosecond pulser ADC system |
| JP7306886B2 (ja) * | 2018-07-30 | 2023-07-11 | 東京エレクトロン株式会社 | 制御方法及びプラズマ処理装置 |
| JP7101096B2 (ja) * | 2018-10-12 | 2022-07-14 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
| US11476145B2 (en) | 2018-11-20 | 2022-10-18 | Applied Materials, Inc. | Automatic ESC bias compensation when using pulsed DC bias |
| CN111383895B (zh) * | 2018-12-29 | 2022-04-08 | 江苏鲁汶仪器有限公司 | 一种等离子体刻蚀设备及其鞘层电压的测量方法 |
| KR20250100790A (ko) | 2019-01-22 | 2025-07-03 | 어플라이드 머티어리얼스, 인코포레이티드 | 펄스 전압 파형을 제어하기 위한 피드백 루프 |
| JP6960421B2 (ja) * | 2019-01-23 | 2021-11-05 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| US11508554B2 (en) | 2019-01-24 | 2022-11-22 | Applied Materials, Inc. | High voltage filter assembly |
| CN111916327B (zh) * | 2019-05-10 | 2023-04-28 | 中微半导体设备(上海)股份有限公司 | 多频率多阶段的等离子体射频输出的方法及其装置 |
| US11967484B2 (en) | 2020-07-09 | 2024-04-23 | Eagle Harbor Technologies, Inc. | Ion current droop compensation |
| US11462388B2 (en) | 2020-07-31 | 2022-10-04 | Applied Materials, Inc. | Plasma processing assembly using pulsed-voltage and radio-frequency power |
| US11901157B2 (en) | 2020-11-16 | 2024-02-13 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
| US11798790B2 (en) | 2020-11-16 | 2023-10-24 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
| US11495470B1 (en) | 2021-04-16 | 2022-11-08 | Applied Materials, Inc. | Method of enhancing etching selectivity using a pulsed plasma |
| US11791138B2 (en) | 2021-05-12 | 2023-10-17 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
| US11948780B2 (en) | 2021-05-12 | 2024-04-02 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
| US11967483B2 (en) | 2021-06-02 | 2024-04-23 | Applied Materials, Inc. | Plasma excitation with ion energy control |
| US12148595B2 (en) | 2021-06-09 | 2024-11-19 | Applied Materials, Inc. | Plasma uniformity control in pulsed DC plasma chamber |
| US20220399185A1 (en) | 2021-06-09 | 2022-12-15 | Applied Materials, Inc. | Plasma chamber and chamber component cleaning methods |
| US11810760B2 (en) | 2021-06-16 | 2023-11-07 | Applied Materials, Inc. | Apparatus and method of ion current compensation |
| US11569066B2 (en) | 2021-06-23 | 2023-01-31 | Applied Materials, Inc. | Pulsed voltage source for plasma processing applications |
| US11776788B2 (en) | 2021-06-28 | 2023-10-03 | Applied Materials, Inc. | Pulsed voltage boost for substrate processing |
| US11476090B1 (en) | 2021-08-24 | 2022-10-18 | Applied Materials, Inc. | Voltage pulse time-domain multiplexing |
| US12106938B2 (en) | 2021-09-14 | 2024-10-01 | Applied Materials, Inc. | Distortion current mitigation in a radio frequency plasma processing chamber |
| US11694876B2 (en) | 2021-12-08 | 2023-07-04 | Applied Materials, Inc. | Apparatus and method for delivering a plurality of waveform signals during plasma processing |
| US11972924B2 (en) | 2022-06-08 | 2024-04-30 | Applied Materials, Inc. | Pulsed voltage source for plasma processing applications |
| US12315732B2 (en) | 2022-06-10 | 2025-05-27 | Applied Materials, Inc. | Method and apparatus for etching a semiconductor substrate in a plasma etch chamber |
| US11824542B1 (en) | 2022-06-29 | 2023-11-21 | Eagle Harbor Technologies, Inc. | Bipolar high voltage pulser |
| US12272524B2 (en) | 2022-09-19 | 2025-04-08 | Applied Materials, Inc. | Wideband variable impedance load for high volume manufacturing qualification and on-site diagnostics |
| CN119998919A (zh) | 2022-09-29 | 2025-05-13 | 鹰港科技有限公司 | 高压等离子控制 |
| US12111341B2 (en) | 2022-10-05 | 2024-10-08 | Applied Materials, Inc. | In-situ electric field detection method and apparatus |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03241649A (ja) * | 1990-02-17 | 1991-10-28 | Minoru Sugawara | プラズマ発生装置 |
| US6174450B1 (en) * | 1997-04-16 | 2001-01-16 | Lam Research Corporation | Methods and apparatus for controlling ion energy and plasma density in a plasma processing system |
| JP2002324783A (ja) * | 2001-04-25 | 2002-11-08 | Toshiba Corp | 異常放電検出方法 |
| JP3946467B2 (ja) * | 2001-07-10 | 2007-07-18 | 松下電器産業株式会社 | ドライエッチング方法 |
| US7541283B2 (en) | 2002-08-30 | 2009-06-02 | Tokyo Electron Limited | Plasma processing method and plasma processing apparatus |
| US7838430B2 (en) * | 2003-10-28 | 2010-11-23 | Applied Materials, Inc. | Plasma control using dual cathode frequency mixing |
| US7951262B2 (en) | 2004-06-21 | 2011-05-31 | Tokyo Electron Limited | Plasma processing apparatus and method |
| US7740737B2 (en) | 2004-06-21 | 2010-06-22 | Tokyo Electron Limited | Plasma processing apparatus and method |
| EP2479783B1 (en) * | 2004-06-21 | 2018-12-12 | Tokyo Electron Limited | Plasma processing apparatus and method |
| US7692916B2 (en) | 2005-03-31 | 2010-04-06 | Tokyo Electron Limited | Capacitive coupling plasma processing apparatus and method |
| JP4704087B2 (ja) * | 2005-03-31 | 2011-06-15 | 東京エレクトロン株式会社 | プラズマ処理装置およびプラズマ処理方法 |
| US9536711B2 (en) * | 2007-03-30 | 2017-01-03 | Lam Research Corporation | Method and apparatus for DC voltage control on RF-powered electrode |
| US20090004836A1 (en) * | 2007-06-29 | 2009-01-01 | Varian Semiconductor Equipment Associates, Inc. | Plasma doping with enhanced charge neutralization |
| JP5466480B2 (ja) * | 2009-02-20 | 2014-04-09 | 東京エレクトロン株式会社 | プラズマエッチング方法、プラズマエッチング装置および記憶媒体 |
| US8383001B2 (en) | 2009-02-20 | 2013-02-26 | Tokyo Electron Limited | Plasma etching method, plasma etching apparatus and storage medium |
| US8414736B2 (en) * | 2009-09-03 | 2013-04-09 | Applied Materials, Inc. | Plasma reactor with tiltable overhead RF inductive source |
| JP5571996B2 (ja) * | 2010-03-31 | 2014-08-13 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
| KR20120022251A (ko) * | 2010-09-01 | 2012-03-12 | 삼성전자주식회사 | 플라즈마 식각방법 및 그의 장치 |
| JP5405504B2 (ja) | 2011-01-31 | 2014-02-05 | 東京エレクトロン株式会社 | プラズマ処理装置およびプラズマ処理方法 |
| JP2013143432A (ja) * | 2012-01-10 | 2013-07-22 | Tokyo Electron Ltd | プラズマ処理装置 |
| TWI576890B (zh) | 2012-02-20 | 2017-04-01 | Tokyo Electron Ltd | Power supply system, plasma processing device and plasma processing method |
| JP5921964B2 (ja) * | 2012-06-11 | 2016-05-24 | 東京エレクトロン株式会社 | プラズマ処理装置及びプローブ装置 |
| JP6002556B2 (ja) * | 2012-11-27 | 2016-10-05 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置およびプラズマ処理方法 |
| KR102168064B1 (ko) | 2013-02-20 | 2020-10-20 | 도쿄엘렉트론가부시키가이샤 | 플라즈마 처리 장치 및 플라즈마 처리 방법 |
| JP6180799B2 (ja) * | 2013-06-06 | 2017-08-16 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
-
2015
- 2015-03-23 JP JP2015059693A patent/JP6424120B2/ja active Active
-
2016
- 2016-03-15 TW TW105107829A patent/TWI700018B/zh active
- 2016-03-21 KR KR1020160033474A patent/KR102283193B1/ko active Active
- 2016-03-21 US US15/075,505 patent/US10056230B2/en active Active
- 2016-03-22 SG SG10201602251QA patent/SG10201602251QA/en unknown
- 2016-03-23 CN CN201610168860.5A patent/CN105990088B/zh active Active
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