JP6424120B2 - 電源システム、プラズマ処理装置及び電源制御方法 - Google Patents

電源システム、プラズマ処理装置及び電源制御方法 Download PDF

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JP6424120B2
JP6424120B2 JP2015059693A JP2015059693A JP6424120B2 JP 6424120 B2 JP6424120 B2 JP 6424120B2 JP 2015059693 A JP2015059693 A JP 2015059693A JP 2015059693 A JP2015059693 A JP 2015059693A JP 6424120 B2 JP6424120 B2 JP 6424120B2
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period
power supply
frequency power
voltage
supply
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JP2016181343A5 (enExample
JP2016181343A (ja
Inventor
太一 平野
太一 平野
淳治 石橋
淳治 石橋
恵貴 伊藤
恵貴 伊藤
邦紘 佐藤
邦紘 佐藤
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2015059693A priority Critical patent/JP6424120B2/ja
Priority to TW105107829A priority patent/TWI700018B/zh
Priority to KR1020160033474A priority patent/KR102283193B1/ko
Priority to US15/075,505 priority patent/US10056230B2/en
Priority to SG10201602251QA priority patent/SG10201602251QA/en
Priority to CN201610168860.5A priority patent/CN105990088B/zh
Publication of JP2016181343A publication Critical patent/JP2016181343A/ja
Publication of JP2016181343A5 publication Critical patent/JP2016181343A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32018—Glow discharge
    • H01J37/32027—DC powered
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32577—Electrical connecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
JP2015059693A 2015-03-23 2015-03-23 電源システム、プラズマ処理装置及び電源制御方法 Active JP6424120B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2015059693A JP6424120B2 (ja) 2015-03-23 2015-03-23 電源システム、プラズマ処理装置及び電源制御方法
TW105107829A TWI700018B (zh) 2015-03-23 2016-03-15 電源系統、電漿處理裝置及電源控制方法
US15/075,505 US10056230B2 (en) 2015-03-23 2016-03-21 Power supply system, plasma processing apparatus and power supply control method
KR1020160033474A KR102283193B1 (ko) 2015-03-23 2016-03-21 전원 시스템, 플라즈마 처리 장치 및 전원 제어 방법
SG10201602251QA SG10201602251QA (en) 2015-03-23 2016-03-22 Power Supply System, Plasma Processing Apparatus And Power Supply Control Method
CN201610168860.5A CN105990088B (zh) 2015-03-23 2016-03-23 电源系统、等离子体处理装置和电源控制方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015059693A JP6424120B2 (ja) 2015-03-23 2015-03-23 電源システム、プラズマ処理装置及び電源制御方法

Publications (3)

Publication Number Publication Date
JP2016181343A JP2016181343A (ja) 2016-10-13
JP2016181343A5 JP2016181343A5 (enExample) 2018-02-08
JP6424120B2 true JP6424120B2 (ja) 2018-11-14

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JP2015059693A Active JP6424120B2 (ja) 2015-03-23 2015-03-23 電源システム、プラズマ処理装置及び電源制御方法

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Country Link
US (1) US10056230B2 (enExample)
JP (1) JP6424120B2 (enExample)
KR (1) KR102283193B1 (enExample)
CN (1) CN105990088B (enExample)
SG (1) SG10201602251QA (enExample)
TW (1) TWI700018B (enExample)

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US11495470B1 (en) 2021-04-16 2022-11-08 Applied Materials, Inc. Method of enhancing etching selectivity using a pulsed plasma
US11791138B2 (en) 2021-05-12 2023-10-17 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
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Also Published As

Publication number Publication date
KR20160113983A (ko) 2016-10-04
TW201707520A (zh) 2017-02-16
US10056230B2 (en) 2018-08-21
KR102283193B1 (ko) 2021-07-29
CN105990088A (zh) 2016-10-05
US20160284514A1 (en) 2016-09-29
SG10201602251QA (en) 2016-10-28
JP2016181343A (ja) 2016-10-13
CN105990088B (zh) 2018-08-28
TWI700018B (zh) 2020-07-21

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