JP2016172881A5 - - Google Patents

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Publication number
JP2016172881A5
JP2016172881A5 JP2015051953A JP2015051953A JP2016172881A5 JP 2016172881 A5 JP2016172881 A5 JP 2016172881A5 JP 2015051953 A JP2015051953 A JP 2015051953A JP 2015051953 A JP2015051953 A JP 2015051953A JP 2016172881 A5 JP2016172881 A5 JP 2016172881A5
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JP
Japan
Prior art keywords
semiconductor substrate
film formation
chamber
formation chamber
wafer stage
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JP2015051953A
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English (en)
Japanese (ja)
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JP6457307B2 (ja
JP2016172881A (ja
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Priority to JP2015051953A priority Critical patent/JP6457307B2/ja
Priority claimed from JP2015051953A external-priority patent/JP6457307B2/ja
Priority to US14/751,603 priority patent/US9779978B2/en
Publication of JP2016172881A publication Critical patent/JP2016172881A/ja
Publication of JP2016172881A5 publication Critical patent/JP2016172881A5/ja
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JP2015051953A 2015-03-16 2015-03-16 半導体装置の製造方法、及び半導体製造装置 Active JP6457307B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2015051953A JP6457307B2 (ja) 2015-03-16 2015-03-16 半導体装置の製造方法、及び半導体製造装置
US14/751,603 US9779978B2 (en) 2015-03-16 2015-06-26 Method of manufacturing semiconductor device and semiconductor manufacturing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015051953A JP6457307B2 (ja) 2015-03-16 2015-03-16 半導体装置の製造方法、及び半導体製造装置

Publications (3)

Publication Number Publication Date
JP2016172881A JP2016172881A (ja) 2016-09-29
JP2016172881A5 true JP2016172881A5 (https=) 2017-03-30
JP6457307B2 JP6457307B2 (ja) 2019-01-23

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JP2015051953A Active JP6457307B2 (ja) 2015-03-16 2015-03-16 半導体装置の製造方法、及び半導体製造装置

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US (1) US9779978B2 (https=)
JP (1) JP6457307B2 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6319158B2 (ja) * 2015-04-03 2018-05-09 トヨタ自動車株式会社 成膜方法および成膜装置
JP6538436B2 (ja) * 2015-06-18 2019-07-03 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
US9905462B2 (en) 2015-08-20 2018-02-27 Toshiba Memory Corporation Semiconductor device and method for manufacturing the same
US10025202B2 (en) 2016-07-29 2018-07-17 Molecular Imprints, Inc. Substrate loading in microlithography
JP7333712B2 (ja) * 2019-06-05 2023-08-25 東京エレクトロン株式会社 静電チャック、支持台及びプラズマ処理装置
US11631571B2 (en) 2019-08-12 2023-04-18 Kurt J. Lesker Company Ultra high purity conditions for atomic scale processing
US20240404989A1 (en) * 2023-06-02 2024-12-05 Taiwan Semiconductor Manufacturing Company Limited Parallel plasma treatment and thermocompression bonding and apparatus for effecting the same

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6063244A (en) * 1998-05-21 2000-05-16 International Business Machines Corporation Dual chamber ion beam sputter deposition system
JP3064268B2 (ja) * 1998-10-29 2000-07-12 アプライド マテリアルズ インコーポレイテッド 成膜方法及び装置
JP4683453B2 (ja) * 2001-04-27 2011-05-18 芝浦メカトロニクス株式会社 真空処理装置
US20070215036A1 (en) * 2006-03-15 2007-09-20 Hyung-Sang Park Method and apparatus of time and space co-divided atomic layer deposition
JP2009065068A (ja) 2007-09-10 2009-03-26 Tokyo Electron Ltd 基板処理装置、基板処理装置の汚染抑制方法及び記憶媒体
JP2012054508A (ja) * 2010-09-03 2012-03-15 Tokyo Electron Ltd 成膜装置
US8399353B2 (en) 2011-01-27 2013-03-19 Tokyo Electron Limited Methods of forming copper wiring and copper film, and film forming system
US9135338B2 (en) 2012-03-01 2015-09-15 Harris Corporation Systems and methods for efficient feature based image and video analysis

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