JP6457307B2 - 半導体装置の製造方法、及び半導体製造装置 - Google Patents
半導体装置の製造方法、及び半導体製造装置 Download PDFInfo
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- JP6457307B2 JP6457307B2 JP2015051953A JP2015051953A JP6457307B2 JP 6457307 B2 JP6457307 B2 JP 6457307B2 JP 2015051953 A JP2015051953 A JP 2015051953A JP 2015051953 A JP2015051953 A JP 2015051953A JP 6457307 B2 JP6457307 B2 JP 6457307B2
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Description
図1(a)及び(b)、図2(a)から(c)、図3(a)から(c)、図4(a)から(c)は、第1実施形態に係る半導体製造装置10の概要を示す図である。図1(a)は第1実施形態に係る半導体製造装置10の構造の一例を示す縦断面図であり、図1(b)の1−1線における縦断面図である。図1(b)は、第1実施形態に係る半導体製造装置10の上面図の一例である。
図9に、第2実施形態に係る半導体製造装置10の概要を示す。第1実施形態と同一の要素については同一符号を付して説明は省略する。図1に示す半導体製造装置10では、搬送室16は移設室18に接続していた。これに対し、図9に示す半導体製造装置10は、搬送室16が第1成膜室12と接続している。その他の構成は図1に示す半導体製造装置10と同じである。なお、図9においては、搬送室16と第1成膜室12との間のゲートバルブが開かれた状態を示している。この構成にすることにより、半導体基板24は搬送室16から直接第1成膜室12に搬入されるため、搬入後すぐに第1成膜室12による成膜処理を施すことが可能となる。これにより、半導体基板24に対する成膜処理のスループットを向上させることが可能となる。
図10に、第3実施形態におけるターンテーブル20cを示す。第1、第2実施形態と同一の要素については同一符号を付して説明は省略する。図10に示すターンテーブル20cは、例えば4つのウェハステージ22を有している。隣接して配置される第1成膜室12及び第2成膜室14に、半導体基板24を交互に搬入する際、例えば2枚の半導体基板24を待機させ、2枚の半導体基板24に対して成膜処理を施すことが可能となる。この構成によれば、半導体基板24の位置の入れ替えのためにターンテーブル20は90度の回転を行えばよいため、その分のスループットを向上させることができる。
図11(a)及び(b)に、第4実施形態に係る半導体製造装置10の構成を示す。第1〜第3実施形態と同一の要素については同一符号を付して説明は省略する。図11(a)は、第4実施形態に係る半導体製造装置10を側面方向から見た断面図であり、図11(b)の10−10線における縦断面図を示している。図11(b)は第4実施形態に係る半導体製造装置10を上面から見た図であり、第1実施形態と同様に、搬送室16、これに接続されるロードロック室30及びロードポート28を有している。また、第1成膜室12及び第2成膜室14は搬送室16の両脇に配置されている。第1実施形態と異なる点は、第1成膜室12及び第2成膜室14が、市松模様状に配置されていることである。
(第5実施形態)
図12(a)〜(c)、及び図13(a)〜(c)に、第5実施形態に係る半導体製造装置10を示す。第1〜第4実施形態と同一の要素については同一符号を付して説明は省略する。第5実施形態に係る半導体製造装置10は、ターンテーブル20とウェハステージ22及びその昇降機構が別体として切り離されており、ウェハステージ22(221及び222)は独自の昇降機構であるステージ軸331及び332を備えている。以下、ウェハステージ22を総称しても用いる場合は符号22を用い、個々のウェハステージ22を指す場合は符号221、222を用いる。半導体基板24についても同様とする。
上記に説明した実施形態は、様々な半導体装置に適用することができる。例えば、NAND型又はNOR型のフラッシュメモリ、EPROM、あるいはDRAM、SRAM、その他の半導体記憶装置、あるいは種々のロジックデバイス、その他の半導体装置に適用しても良い。
Claims (4)
- 少なくとも第1の半導体基板と第2の半導体基板を載置可能で、回転することで前記第1の半導体基板と前記第2の半導体基板の位置を移動可能に構成されたターンテーブルと、前記ターンテーブルを格納する移設室とを有し、
前記ターンテーブルの回転及び前記ターンテーブルに載置された前記第1の半導体基板と前記第2の半導体基板の昇降により、前記第1の半導体基板と前記第2の半導体基板を、第1成膜室及び第2成膜室間で移設し、前記第1の半導体基板と前記第2の半導体基板上に積層膜を形成するものであり、
前記第1成膜室、前記第2成膜室及び前記移設室は減圧されており、
前記移設室内の圧力に対して、少なくとも前記第1成膜室及び前記第2成膜室の一方は、揚圧である半導体装置の製造方法。 - 前記第1成膜室では酸化性雰囲気中で成膜が行われ、前記第2成膜室では被酸化性物質の成膜が行われる請求項1に記載の半導体装置の製造方法。
- さらに、前記移設室に接続する搬送室を有しており、
前記第1成膜室と、前記第2成膜室と、前記移設室と、前記搬送室は、減圧雰囲気にされている請求項1又は2に記載の半導体装置の製造方法。 - 少なくとも第1の半導体基板と第2の半導体基板を載置可能で、回転することで前記第1の半導体基板と前記第2の半導体基板の位置を移動可能に構成されたターンテーブルと、
前記ターンテーブルに載置された前記第1の半導体基板と前記第2の半導体基板の昇降により搬入出可能な位置にそれぞれ開口を有する第1成膜室及び第2成膜室と、前記ターンテーブルを格納する移設室と、
前記移設室又は前記第1成膜室及び前記第2成膜室の何れかに接続される搬送室と、を備え、
少なくとも、前記第1成膜室、前記第2成膜室及び前記移設室は減圧されており、
前記移設室内の圧力に対して、少なくとも前記第1成膜室及び前記第2成膜室の一方は、揚圧である半導体製造装置。
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