WO2009060514A1 - 半導体装置の製造方法、ウエハおよびウエハの製造方法 - Google Patents

半導体装置の製造方法、ウエハおよびウエハの製造方法 Download PDF

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Publication number
WO2009060514A1
WO2009060514A1 PCT/JP2007/071565 JP2007071565W WO2009060514A1 WO 2009060514 A1 WO2009060514 A1 WO 2009060514A1 JP 2007071565 W JP2007071565 W JP 2007071565W WO 2009060514 A1 WO2009060514 A1 WO 2009060514A1
Authority
WO
WIPO (PCT)
Prior art keywords
chips
wafer
dicing
manufacturing
pieces
Prior art date
Application number
PCT/JP2007/071565
Other languages
English (en)
French (fr)
Inventor
Akiyoshi Suzuki
Original Assignee
Fujitsu Microelectronics Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Microelectronics Limited filed Critical Fujitsu Microelectronics Limited
Priority to PCT/JP2007/071565 priority Critical patent/WO2009060514A1/ja
Publication of WO2009060514A1 publication Critical patent/WO2009060514A1/ja

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dicing (AREA)

Abstract

　１枚のウエハから異なる平面サイズのチップを一定数、効率的に取得する。 　平面サイズが整数倍異なるチップ（Ａ），（Ｂ），（Ｃ）について、最大のチップ（Ｃ）をウエハ（１）の中央部にその直径方向に整列配置し、その外側に中間のチップ（Ｂ）を整列配置し、さらにその外側に最小のチップ（Ａ）を整列配置する。各チップ（Ａ），（Ｂ），（Ｃ）を配置したウエハ（１）について、まず最大のチップ（Ｃ）を個片化するダイシングを行ってチップ（Ｃ）を取得し、続いて中間のチップ（Ｂ）を個片化するダイシングを行ってチップ（Ｂ）を取得し、最後に最小のチップ（Ａ）を個片化するダイシングを行ってチップ（Ａ）を取得する。これにより、ウエハ（１）からチップ（Ａ），（Ｂ），（Ｃ）を、それぞれ一定の取得数を確保しつつ、ダイシング時にスクライブラインのＴ字交差位置での破壊を回避して、取得することができる。
PCT/JP2007/071565 2007-11-06 2007-11-06 半導体装置の製造方法、ウエハおよびウエハの製造方法 WO2009060514A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/071565 WO2009060514A1 (ja) 2007-11-06 2007-11-06 半導体装置の製造方法、ウエハおよびウエハの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/071565 WO2009060514A1 (ja) 2007-11-06 2007-11-06 半導体装置の製造方法、ウエハおよびウエハの製造方法

Publications (1)

Publication Number Publication Date
WO2009060514A1 true WO2009060514A1 (ja) 2009-05-14

Family

ID=40625429

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/071565 WO2009060514A1 (ja) 2007-11-06 2007-11-06 半導体装置の製造方法、ウエハおよびウエハの製造方法

Country Status (1)

Country Link
WO (1) WO2009060514A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018015114A1 (en) * 2016-07-19 2018-01-25 Asml Netherlands B.V. Determining the combination of patterns to be applied to a substrate in a lithography step
US20180158788A1 (en) * 2016-12-01 2018-06-07 Avery Dennison Retail Information Services, Llc Mixed structure method of layout of different size elements to optimize the area usage on a wafer

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0737766A (ja) * 1993-07-19 1995-02-07 Sony Corp ウエハ上のチップ割り当て方法
JPH08186064A (ja) * 1994-12-28 1996-07-16 Nec Kyushu Ltd 半導体ウエハおよび半導体ペレットの分割方法
JPH09199377A (ja) * 1996-01-22 1997-07-31 Mitsubishi Electric Corp チップ製造方法
JP2001148358A (ja) * 1999-11-19 2001-05-29 Disco Abrasive Syst Ltd 半導体ウェーハ及び該半導体ウェーハの分割方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0737766A (ja) * 1993-07-19 1995-02-07 Sony Corp ウエハ上のチップ割り当て方法
JPH08186064A (ja) * 1994-12-28 1996-07-16 Nec Kyushu Ltd 半導体ウエハおよび半導体ペレットの分割方法
JPH09199377A (ja) * 1996-01-22 1997-07-31 Mitsubishi Electric Corp チップ製造方法
JP2001148358A (ja) * 1999-11-19 2001-05-29 Disco Abrasive Syst Ltd 半導体ウェーハ及び該半導体ウェーハの分割方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018015114A1 (en) * 2016-07-19 2018-01-25 Asml Netherlands B.V. Determining the combination of patterns to be applied to a substrate in a lithography step
JP2019522820A (ja) * 2016-07-19 2019-08-15 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィステップにおける基板に施されるべきパターンの組み合わせの決定
US11747738B2 (en) 2016-07-19 2023-09-05 Asml Netherlands B.V. Determining the combination of patterns to be applied to a substrate in a lithography step
US20180158788A1 (en) * 2016-12-01 2018-06-07 Avery Dennison Retail Information Services, Llc Mixed structure method of layout of different size elements to optimize the area usage on a wafer
CN110023961A (zh) * 2016-12-01 2019-07-16 艾利丹尼森零售信息服务公司 不同尺寸元件布局的混合结构方法以优化晶圆的面积使用

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