CN111684605A - 半导体装置及其制造方法 - Google Patents
半导体装置及其制造方法 Download PDFInfo
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- CN111684605A CN111684605A CN201980005610.1A CN201980005610A CN111684605A CN 111684605 A CN111684605 A CN 111684605A CN 201980005610 A CN201980005610 A CN 201980005610A CN 111684605 A CN111684605 A CN 111684605A
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- 238000000034 method Methods 0.000 title claims description 39
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- 239000000463 material Substances 0.000 claims abstract description 74
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- 229910052782 aluminium Inorganic materials 0.000 claims description 18
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- 229910052581 Si3N4 Inorganic materials 0.000 claims description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 12
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- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
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- 229910052593 corundum Inorganic materials 0.000 description 2
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- 229910052760 oxygen Inorganic materials 0.000 description 2
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- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
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- 230000004075 alteration Effects 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13064—High Electron Mobility Transistor [HEMT, HFET [heterostructure FET], MODFET]
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- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
一种半导体装置(1,2,3,4,5),其包括衬底(100)、沟道层(120)、势垒层(130,130’)、闸极(140,140’)、应变层(170,210)及钝化层(180)。沟道层(120)设置于衬底(100)上。势垒层(130,130’)设置于沟道层(120)上。闸极(140,140’)设置于势垒层(130,130’)上。应变层(170,210)设置于势垒层(130,130’)上。钝化层(180)覆盖闸极(140,140’)及应变层(170,210)。钝化层(180)的材料与应变层(170,210)的材料不同。
Description
PCT国内申请,说明书已公开。
Claims (20)
- PCT国内申请,权利要求书已公开。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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CN2018115713635 | 2018-12-21 | ||
CN201811571363.5A CN109659366A (zh) | 2018-12-21 | 2018-12-21 | 高电子迁移率晶体管及其制造方法 |
PCT/CN2019/127085 WO2020125764A1 (zh) | 2018-12-21 | 2019-12-20 | 半导体装置及其制造方法 |
Publications (2)
Publication Number | Publication Date |
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CN111684605A true CN111684605A (zh) | 2020-09-18 |
CN111684605B CN111684605B (zh) | 2024-03-19 |
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CN201811571363.5A Pending CN109659366A (zh) | 2018-12-21 | 2018-12-21 | 高电子迁移率晶体管及其制造方法 |
CN201980005610.1A Active CN111684605B (zh) | 2018-12-21 | 2019-12-20 | 半导体装置及其制造方法 |
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Country Status (3)
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US (2) | US20200203502A1 (zh) |
CN (2) | CN109659366A (zh) |
WO (1) | WO2020125764A1 (zh) |
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Publication number | Priority date | Publication date | Assignee | Title |
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CN109659366A (zh) * | 2018-12-21 | 2019-04-19 | 英诺赛科(珠海)科技有限公司 | 高电子迁移率晶体管及其制造方法 |
US11670709B2 (en) * | 2019-03-11 | 2023-06-06 | Intel Corporation | III-N transistors with local stressors for threshold voltage control |
JP7439536B2 (ja) * | 2020-01-28 | 2024-02-28 | 富士通株式会社 | 半導体装置 |
CN113066864B (zh) * | 2020-04-30 | 2022-09-13 | 英诺赛科(苏州)半导体有限公司 | 半导体器件 |
CN112204749A (zh) | 2020-07-16 | 2021-01-08 | 英诺赛科(珠海)科技有限公司 | 半导体装置结构和其制造方法 |
US20220384628A1 (en) * | 2021-01-27 | 2022-12-01 | Innoscience (suzhou) Semiconductor Co., Ltd. | Semiconductor device structures and methods of manufacturing the same |
CN117637835A (zh) * | 2024-01-23 | 2024-03-01 | 英诺赛科(珠海)科技有限公司 | 一种氮化镓器件及其制备方法 |
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- 2019-12-20 CN CN201980005610.1A patent/CN111684605B/zh active Active
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US11784237B2 (en) | 2023-10-10 |
CN111684605B (zh) | 2024-03-19 |
WO2020125764A1 (zh) | 2020-06-25 |
CN109659366A (zh) | 2019-04-19 |
US20210151594A1 (en) | 2021-05-20 |
US20200203502A1 (en) | 2020-06-25 |
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