JP2016170350A - アライメントマークの形成方法および半導体装置 - Google Patents
アライメントマークの形成方法および半導体装置 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 53
- 230000015572 biosynthetic process Effects 0.000 title claims abstract description 7
- 239000004065 semiconductor Substances 0.000 title claims description 43
- 229910052751 metal Inorganic materials 0.000 claims abstract description 39
- 239000002184 metal Substances 0.000 claims abstract description 38
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 51
- 239000001301 oxygen Substances 0.000 claims description 51
- 229910052760 oxygen Inorganic materials 0.000 claims description 51
- 239000000758 substrate Substances 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 9
- 238000002834 transmittance Methods 0.000 claims description 7
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 238000005259 measurement Methods 0.000 abstract description 2
- 238000009413 insulation Methods 0.000 abstract 3
- 239000010410 layer Substances 0.000 description 45
- 239000011229 interlayer Substances 0.000 description 22
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 12
- 229910052721 tungsten Inorganic materials 0.000 description 12
- 239000010937 tungsten Substances 0.000 description 12
- 238000000137 annealing Methods 0.000 description 10
- 238000001459 lithography Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- ZNOKGRXACCSDPY-UHFFFAOYSA-N tungsten trioxide Chemical compound O=[W](=O)=O ZNOKGRXACCSDPY-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 238000005224 laser annealing Methods 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 239000002923 metal particle Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- AXCZMVOFGPJBDE-UHFFFAOYSA-L calcium dihydroxide Chemical compound [OH-].[OH-].[Ca+2] AXCZMVOFGPJBDE-UHFFFAOYSA-L 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000000920 calcium hydroxide Substances 0.000 description 1
- 229910001861 calcium hydroxide Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- -1 for example Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001127 nanoimprint lithography Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
- H01L21/02354—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light using a coherent radiation, e.g. a laser
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
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- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Geometry or layout of the interconnection structure
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- H01L2223/54453—Marks applied to semiconductor devices or parts for use prior to dicing
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- H—ELECTRICITY
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- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
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- H01L2223/54453—Marks applied to semiconductor devices or parts for use prior to dicing
- H01L2223/5446—Located in scribe lines
Abstract
Description
図1は、第1の実施形態が適用される半導体装置の製造方法の手順の一例を模式的に示す断面図である。なお、ここでは、後述する半導体チップ領域2での半導体装置の製造方法の手順を示している。
第1の実施形態では、アライメントマークの上面は、層間絶縁膜の上面と一致する場合を示した。第2の実施形態では、アライメントマークの上面が、層間絶縁膜の上面よりも突出する場合の半導体装置とアライメントマークの形成方法について説明する。
Claims (5)
- 絶縁膜に第1パターンを形成し、
前記絶縁膜の前記第1パターンの形成位置を含む領域上に第1透明膜を形成し、
前記絶縁膜上の全面に可視光領域の光に対して不透明な不透明膜を形成し、
前記第1透明膜と接する前記不透明膜を選択的に酸化させて第2透明膜を生成するアライメントマークの形成方法。 - 前記第1透明膜は、酸素を含む材料によって構成される請求項1に記載のアライメントマークの形成方法。
- 前記不透明膜は、酸化によって透過率が上昇する材料である請求項1に記載のアライメントマークの形成方法。
- 前記第2透明膜の生成では、少なくとも前記第1透明膜と接する前記不透明膜を400度以上の温度でアニールする請求項1に記載のアライメントマークの形成方法。
- 基板上に、素子が配置される第1領域と、素子が配置されない第2領域と、が設けられ、前記第2領域にアライメントマークを備える半導体装置であって、
前記第1領域の絶縁膜上に配置される配線層を備え、
前記アライメントマークは、
前記第2領域の前記絶縁膜中に埋め込まれる所定形状の金属パターンと、
前記金属パターンを含む領域の前記絶縁膜上に配置される第1透明膜と、
前記第1透明膜を覆う第2透明膜と、
を備え、
前記第2透明膜は、前記配線層を構成する材料の酸化物である半導体装置。
Priority Applications (2)
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JP2015051208A JP6378117B2 (ja) | 2015-03-13 | 2015-03-13 | アライメントマークの形成方法および半導体装置 |
US14/799,787 US9502357B2 (en) | 2015-03-13 | 2015-07-15 | Alignment mark formation method and semiconductor device |
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JP2015051208A JP6378117B2 (ja) | 2015-03-13 | 2015-03-13 | アライメントマークの形成方法および半導体装置 |
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JP2016170350A true JP2016170350A (ja) | 2016-09-23 |
JP6378117B2 JP6378117B2 (ja) | 2018-08-22 |
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JP (1) | JP6378117B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2020527742A (ja) * | 2017-07-17 | 2020-09-10 | エーエスエムエル ネザーランズ ビー.ブイ. | 情報を測定する装置及び方法 |
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US11244907B2 (en) * | 2020-01-02 | 2022-02-08 | International Business Machines Corporation | Metal surface preparation for increased alignment contrast |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0277111A (ja) * | 1988-06-08 | 1990-03-16 | Nec Corp | 半導体装置の製造方法 |
JPH0846043A (ja) * | 1994-08-04 | 1996-02-16 | Toshiba Corp | 半導体装置の多層配線構造及びその形成方法 |
WO2010103609A1 (ja) * | 2009-03-09 | 2010-09-16 | 株式会社 東芝 | 情報記録再生装置 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
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EP0570740B1 (en) * | 1992-04-30 | 1999-07-21 | Canon Kabushiki Kaisha | Image forming method, image forming apparatus and transparent film |
JP4192423B2 (ja) * | 1997-11-20 | 2008-12-10 | 株式会社ニコン | マーク検出方法、位置検出装置、露光方法及び装置、デバイス製造方法、並びにデバイス |
JP4864776B2 (ja) * | 2007-03-14 | 2012-02-01 | 株式会社東芝 | フォトマスク |
JP4967904B2 (ja) * | 2007-07-31 | 2012-07-04 | 富士電機株式会社 | 半導体装置 |
JP2009088140A (ja) | 2007-09-28 | 2009-04-23 | Fujifilm Corp | アライメントマーク構造、半導体素子製造方法、半導体素子、電荷結合素子、及び固体撮像装置 |
US8324742B2 (en) * | 2008-04-01 | 2012-12-04 | Texas Instruments Incorporated | Alignment mark for opaque layer |
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2015
- 2015-03-13 JP JP2015051208A patent/JP6378117B2/ja not_active Expired - Fee Related
- 2015-07-15 US US14/799,787 patent/US9502357B2/en not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0277111A (ja) * | 1988-06-08 | 1990-03-16 | Nec Corp | 半導体装置の製造方法 |
JPH0846043A (ja) * | 1994-08-04 | 1996-02-16 | Toshiba Corp | 半導体装置の多層配線構造及びその形成方法 |
WO2010103609A1 (ja) * | 2009-03-09 | 2010-09-16 | 株式会社 東芝 | 情報記録再生装置 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020527742A (ja) * | 2017-07-17 | 2020-09-10 | エーエスエムエル ネザーランズ ビー.ブイ. | 情報を測定する装置及び方法 |
US10948837B2 (en) | 2017-07-17 | 2021-03-16 | Asml Netherlands B.V. | Information determining apparatus and method |
JP7265493B2 (ja) | 2017-07-17 | 2023-04-26 | エーエスエムエル ネザーランズ ビー.ブイ. | 情報を測定する装置及び方法 |
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JP6378117B2 (ja) | 2018-08-22 |
US9502357B2 (en) | 2016-11-22 |
US20160268211A1 (en) | 2016-09-15 |
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