JP2016134522A5 - - Google Patents

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Publication number
JP2016134522A5
JP2016134522A5 JP2015008745A JP2015008745A JP2016134522A5 JP 2016134522 A5 JP2016134522 A5 JP 2016134522A5 JP 2015008745 A JP2015008745 A JP 2015008745A JP 2015008745 A JP2015008745 A JP 2015008745A JP 2016134522 A5 JP2016134522 A5 JP 2016134522A5
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JP
Japan
Prior art keywords
inp layer
layer
type inp
optical waveguide
carrier concentration
Prior art date
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Application number
JP2015008745A
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English (en)
Japanese (ja)
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JP6375960B2 (ja
JP2016134522A (ja
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Publication date
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Priority to JP2015008745A priority Critical patent/JP6375960B2/ja
Priority claimed from JP2015008745A external-priority patent/JP6375960B2/ja
Priority to US14/887,558 priority patent/US9564737B2/en
Priority to CN201610039147.0A priority patent/CN105811239B/zh
Publication of JP2016134522A publication Critical patent/JP2016134522A/ja
Publication of JP2016134522A5 publication Critical patent/JP2016134522A5/ja
Application granted granted Critical
Publication of JP6375960B2 publication Critical patent/JP6375960B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2015008745A 2015-01-20 2015-01-20 光半導体装置 Active JP6375960B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2015008745A JP6375960B2 (ja) 2015-01-20 2015-01-20 光半導体装置
US14/887,558 US9564737B2 (en) 2015-01-20 2015-10-20 Optical semiconductor device
CN201610039147.0A CN105811239B (zh) 2015-01-20 2016-01-20 光半导体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015008745A JP6375960B2 (ja) 2015-01-20 2015-01-20 光半導体装置

Publications (3)

Publication Number Publication Date
JP2016134522A JP2016134522A (ja) 2016-07-25
JP2016134522A5 true JP2016134522A5 (enExample) 2017-07-27
JP6375960B2 JP6375960B2 (ja) 2018-08-22

Family

ID=56408535

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015008745A Active JP6375960B2 (ja) 2015-01-20 2015-01-20 光半導体装置

Country Status (3)

Country Link
US (1) US9564737B2 (enExample)
JP (1) JP6375960B2 (enExample)
CN (1) CN105811239B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6740780B2 (ja) * 2016-07-28 2020-08-19 三菱電機株式会社 光半導体装置
CN110431720B (zh) * 2017-03-23 2021-01-08 三菱电机株式会社 光半导体元件
JP6245419B1 (ja) * 2017-04-04 2017-12-13 三菱電機株式会社 半導体装置、半導体装置の製造方法
CN112398003B (zh) * 2019-08-19 2023-01-06 朗美通日本株式会社 调制掺杂半导体激光器及其制造方法
CN112366520B (zh) * 2020-10-23 2022-07-08 湖北光安伦芯片有限公司 一种高速dfb激光器的制作方法
JP7010423B1 (ja) * 2021-09-28 2022-01-26 三菱電機株式会社 光半導体素子、光モジュールおよび光半導体素子の製造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0677583A (ja) * 1992-08-24 1994-03-18 Mitsubishi Electric Corp 半導体レーザ／光変調器集積化光源
JPH08148758A (ja) * 1994-11-17 1996-06-07 Nippon Telegr & Teleph Corp <Ntt> 半導体光素子およびその製造方法
US6597718B2 (en) * 2000-07-18 2003-07-22 Multiplex, Inc. Electroabsorption-modulated fabry perot laser
JP2002299752A (ja) * 2001-04-02 2002-10-11 Sumitomo Electric Ind Ltd 光集積素子の製造方法および光集積素子
JP4833457B2 (ja) * 2001-08-29 2011-12-07 古河電気工業株式会社 光集積デバイスの作製方法
JP4158383B2 (ja) * 2002-02-01 2008-10-01 住友電気工業株式会社 半導体光集積素子
US7215691B2 (en) * 2002-09-19 2007-05-08 Matsushita Electric Industrial Co., Ltd. Semiconductor laser device and method for fabricating the same
JP2005217010A (ja) * 2004-01-28 2005-08-11 Mitsubishi Electric Corp 半導体レーザ装置
JP2005317659A (ja) * 2004-04-27 2005-11-10 Nec Corp 集積型半導体光デバイス及びその製造方法
JP4978123B2 (ja) * 2006-09-13 2012-07-18 富士通株式会社 光半導体集積装置の製造方法
JP2009038120A (ja) * 2007-07-31 2009-02-19 Nec Corp 半導体光集積素子およびその製造方法
JP2009283822A (ja) * 2008-05-26 2009-12-03 Mitsubishi Electric Corp 半導体レーザ及びその製造方法
JP5109931B2 (ja) 2008-10-31 2012-12-26 日本電気株式会社 半導体光集積素子および半導体光集積素子の製造方法
JP5463760B2 (ja) 2009-07-02 2014-04-09 三菱電機株式会社 光導波路集積型半導体光素子およびその製造方法
JP2011077329A (ja) 2009-09-30 2011-04-14 Nec Corp 半導体光集積素子、及びその製造方法
EP2403077B1 (en) * 2010-06-30 2017-11-22 Alcatel Lucent A photonic device and a method of manufacturing a photonic device

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