JP2016096716A - スイッチング電源 - Google Patents
スイッチング電源 Download PDFInfo
- Publication number
- JP2016096716A JP2016096716A JP2015223302A JP2015223302A JP2016096716A JP 2016096716 A JP2016096716 A JP 2016096716A JP 2015223302 A JP2015223302 A JP 2015223302A JP 2015223302 A JP2015223302 A JP 2015223302A JP 2016096716 A JP2016096716 A JP 2016096716A
- Authority
- JP
- Japan
- Prior art keywords
- mosfet
- gate drive
- drive voltage
- power supply
- switching power
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
- H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
- H03K17/163—Soft switching
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
- H03K17/165—Modifications for eliminating interference voltages or currents in field-effect transistor switches by feedback from the output circuit to the control circuit
- H03K17/166—Soft switching
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0003—Details of control, feedback or regulation circuits
- H02M1/0029—Circuits or arrangements for limiting the slope of switching signals, e.g. slew rate
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0036—Means reducing energy consumption
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Power Conversion In General (AREA)
- Electronic Switches (AREA)
- Dc-Dc Converters (AREA)
Abstract
Description
少なくとも1つの金属酸化膜半導体電界効果トランジスタ(MOSFET)と、
上記少なくとも1つのMOSFETのそれぞれのオフ遷移(off transition)が、低速スルー領域(Slewing Region:変化領域)が後に続く高速スルー領域を有する形状となるように、上記少なくとも1つのMOSFETそれぞれのゲートを駆動するよう構成される少なくとも1つの波形発生装置と、
上記少なくとも1つのMOSFETのそれぞれがオフになる時間を検出するよう構成される検出部(detection component)と
を具えている。
302 初期ゲート駆動電圧
304 隆起ゲート駆動電圧
306 最大しきい値
308 最小しきい値
310 実際のしきい値
602 プローブ電圧
702 プローブ電圧
802 初期形状ゲート駆動電圧
804 隆起形状ゲート駆動電圧
806 最大しきい値
808 最小しきい値
810 実際のしきい値
Claims (3)
- 少なくとも1つのMOSFETと、
上記少なくとも1つのMOSFETのそれぞれのオフ遷移が、低速スルー領域が後に続く高速スルー領域を有する形状となるように、上記少なくとも1つのMOSFETそれぞれのゲートを駆動するよう構成される少なくとも1つの波形発生装置と、
上記少なくとも1つのMOSFETのそれぞれがオフになる時間を検出するよう構成される検出部と
を具えるスイッチング電源。 - 上記少なくとも1つのMOSFETを、上記高速スルー領域中にオフにするように構成される請求項1のスイッチング電源。
- 上記少なくとも1つの波形発生装置が、上記ゲート駆動電圧波形への可変バイアスを、上記少なくとも1つのMOSFETに供給するよう更に構成される請求項1のスイッチング電源。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/542231 | 2014-11-14 | ||
US14/542,231 US11088609B2 (en) | 2014-11-14 | 2014-11-14 | Low noise power supply MOSFET gate drive scheme |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016096716A true JP2016096716A (ja) | 2016-05-26 |
JP7009045B2 JP7009045B2 (ja) | 2022-01-25 |
Family
ID=54544981
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015223302A Active JP7009045B2 (ja) | 2014-11-14 | 2015-11-13 | スイッチング電源システム及びスイッチング電源のmosfetゲート駆動方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US11088609B2 (ja) |
EP (1) | EP3021487A1 (ja) |
JP (1) | JP7009045B2 (ja) |
CN (1) | CN105610304B (ja) |
TW (1) | TW201626700A (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI692187B (zh) * | 2018-12-24 | 2020-04-21 | 財團法人工業技術研究院 | 驅動裝置 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003169465A (ja) * | 2001-11-30 | 2003-06-13 | Toshiba Corp | ゲート駆動回路、および電力変換装置 |
JP2003188699A (ja) * | 2001-12-14 | 2003-07-04 | Nissan Motor Co Ltd | 電流制御型半導体素子用駆動回路 |
JP2008519529A (ja) * | 2004-11-05 | 2008-06-05 | インターナショナル レクティファイアー コーポレイション | dI/dtを低下させ、遅延補正を施すドライバおよび方法 |
JP2008178248A (ja) * | 2007-01-19 | 2008-07-31 | Mitsubishi Electric Corp | 電力用半導体素子の駆動回路および電力変換装置 |
JP2008177853A (ja) * | 2007-01-18 | 2008-07-31 | Toyota Central R&D Labs Inc | 電力用半導体素子の駆動回路 |
JP2008541507A (ja) * | 2005-04-28 | 2008-11-20 | テキサス インスツルメンツ インコーポレイテッド | 電力用電界効果トランジスタ(fet)の駆動システムおよびその方法 |
US20090027096A1 (en) * | 2007-07-27 | 2009-01-29 | Andre Mourrier | Dc brushed motor drive with circuit to reduce di/dt and emi, for mosfet vth detection, voltage source detection, and overpower protection |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6051995A (en) | 1998-09-11 | 2000-04-18 | Sharp Electronics Corporation | Constant impedance, low noise CMOS buffer |
JP4556331B2 (ja) * | 2001-01-22 | 2010-10-06 | 株式会社豊田自動織機 | スイッチング電源回路 |
US6975098B2 (en) | 2002-01-31 | 2005-12-13 | Vlt, Inc. | Factorized power architecture with point of load sine amplitude converters |
US8134851B2 (en) | 2003-11-04 | 2012-03-13 | International Rectifier Corporation | Secondary side synchronous rectifier for resonant converter |
JP4832731B2 (ja) | 2004-07-07 | 2011-12-07 | 株式会社東芝 | 電力用半導体装置 |
CN101142730A (zh) * | 2004-11-05 | 2008-03-12 | 国际整流器公司 | 具有减小的di/dt和延迟补偿的驱动电路及方法 |
US7365584B2 (en) * | 2006-06-02 | 2008-04-29 | Freescale Semiconductor, Inc. | Slew-rate control apparatus and methods for a power transistor to reduce voltage transients during inductive flyback |
US7812647B2 (en) | 2007-05-21 | 2010-10-12 | Advanced Analogic Technologies, Inc. | MOSFET gate drive with reduced power loss |
JP2009071956A (ja) | 2007-09-12 | 2009-04-02 | Mitsubishi Electric Corp | ゲート駆動回路 |
US8305053B2 (en) * | 2010-08-18 | 2012-11-06 | Texas Instruments Incorporated | System and method for controlling a power switch in a power supply system |
JP5532062B2 (ja) | 2012-02-13 | 2014-06-25 | 株式会社デンソー | 逆導通スイッチング素子の駆動装置 |
-
2014
- 2014-11-14 US US14/542,231 patent/US11088609B2/en active Active
-
2015
- 2015-09-04 TW TW104129353A patent/TW201626700A/zh unknown
- 2015-11-13 EP EP15194579.7A patent/EP3021487A1/en not_active Withdrawn
- 2015-11-13 JP JP2015223302A patent/JP7009045B2/ja active Active
- 2015-11-13 CN CN201510773186.9A patent/CN105610304B/zh active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003169465A (ja) * | 2001-11-30 | 2003-06-13 | Toshiba Corp | ゲート駆動回路、および電力変換装置 |
JP2003188699A (ja) * | 2001-12-14 | 2003-07-04 | Nissan Motor Co Ltd | 電流制御型半導体素子用駆動回路 |
JP2008519529A (ja) * | 2004-11-05 | 2008-06-05 | インターナショナル レクティファイアー コーポレイション | dI/dtを低下させ、遅延補正を施すドライバおよび方法 |
JP2008541507A (ja) * | 2005-04-28 | 2008-11-20 | テキサス インスツルメンツ インコーポレイテッド | 電力用電界効果トランジスタ(fet)の駆動システムおよびその方法 |
JP2008177853A (ja) * | 2007-01-18 | 2008-07-31 | Toyota Central R&D Labs Inc | 電力用半導体素子の駆動回路 |
JP2008178248A (ja) * | 2007-01-19 | 2008-07-31 | Mitsubishi Electric Corp | 電力用半導体素子の駆動回路および電力変換装置 |
US20090027096A1 (en) * | 2007-07-27 | 2009-01-29 | Andre Mourrier | Dc brushed motor drive with circuit to reduce di/dt and emi, for mosfet vth detection, voltage source detection, and overpower protection |
Also Published As
Publication number | Publication date |
---|---|
EP3021487A1 (en) | 2016-05-18 |
US20160141948A1 (en) | 2016-05-19 |
CN105610304B (zh) | 2019-11-19 |
TW201626700A (zh) | 2016-07-16 |
CN105610304A (zh) | 2016-05-25 |
JP7009045B2 (ja) | 2022-01-25 |
US11088609B2 (en) | 2021-08-10 |
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