JP7009045B2 - スイッチング電源システム及びスイッチング電源のmosfetゲート駆動方法 - Google Patents
スイッチング電源システム及びスイッチング電源のmosfetゲート駆動方法 Download PDFInfo
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- JP7009045B2 JP7009045B2 JP2015223302A JP2015223302A JP7009045B2 JP 7009045 B2 JP7009045 B2 JP 7009045B2 JP 2015223302 A JP2015223302 A JP 2015223302A JP 2015223302 A JP2015223302 A JP 2015223302A JP 7009045 B2 JP7009045 B2 JP 7009045B2
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- Prior art keywords
- mosfet
- gate drive
- speed
- region
- drive voltage
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Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
- H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
- H03K17/163—Soft switching
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
- H03K17/165—Modifications for eliminating interference voltages or currents in field-effect transistor switches by feedback from the output circuit to the control circuit
- H03K17/166—Soft switching
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0003—Details of control, feedback or regulation circuits
- H02M1/0029—Circuits or arrangements for limiting the slope of switching signals, e.g. slew rate
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0036—Means reducing energy consumption
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Power Conversion In General (AREA)
- Electronic Switches (AREA)
- Dc-Dc Converters (AREA)
Description
少なくとも1つの金属酸化膜半導体電界効果トランジスタ(MOSFET)と、
上記少なくとも1つのMOSFETのそれぞれのオフ遷移(off transition)が、低速スルー領域(Slewing Region:変化領域)が後に続く高速スルー領域を有する形状となるように、上記少なくとも1つのMOSFETそれぞれのゲートを駆動するよう構成される少なくとも1つの波形発生装置と、
上記少なくとも1つのMOSFETのそれぞれがオフになる時間を検出するよう構成される検出部(detection component)と
を具えている。
302 初期変形ゲート駆動電圧
304 上昇変形ゲート駆動電圧
306 最大しきい値
308 最小しきい値
310 実際のしきい値
602 プローブ電圧
702 プローブ電圧
802 初期変形ゲート駆動電圧
804 上昇変形ゲート駆動電圧
806 最大しきい値
808 最小しきい値
810 実際のしきい値
Claims (2)
- 少なくとも1つのMOSFETと、
上記少なくとも1つのMOSFETそれぞれのゲートを駆動するゲート駆動電圧波形であって、上記少なくとも1つのMOSFETのそれぞれをオフへ遷移させる可能性のある上記ゲートの最大しきい値電圧と最小しきい値電圧とを横断して高速に電圧が変化する高速スルー領域と、該高速スルー領域の後に続き、上記高速スルー領域よりも電圧の変化が低速な低速スルー領域とを有する上記ゲート駆動電圧波形を生成するよう構成される少なくとも1つの波形発生装置と、
上記少なくとも1つのMOSFETの電圧又は電流を測定することによって、上記MOSFETがオフになる時間を測定するよう構成される測定装置と
を具え、
上記測定装置の測定結果を利用して、上記MOSFETをオフにする上記ゲートの実際のしきい値電圧を上記低速スルー領域で横断するように、上記波形発生装置が生成する上記ゲート駆動電圧波形のバイアスを調整するスイッチング電源システム。 - スイッチング電源の少なくとも1つのMOSFETのゲートを駆動する方法であって、
上記少なくとも1つのMOSFETのそれぞれをオフへ遷移させる可能性のある上記ゲートの最大しきい値電圧と最小しきい値電圧とを横断して高速に電圧が変化する高速スルー領域と、該高速スルー領域の後に続き、上記高速スルー領域よりも電圧の変化が低速な低速スルー領域とを有するゲート駆動電圧波形を生成する処理と、
上記少なくとも1つのMOSFETの電圧又は電流を測定装置で測定することによって、上記MOSFETがオフになる時間を測定する処理と、
上記測定装置の測定結果を利用して、上記MOSFETをオフにする上記ゲートの実際のしきい値電圧を上記低速スルー領域で横断するように、上記ゲート駆動電圧波形のバイアスを調整する処理と
を具えるスイッチング電源のMOSFETゲート駆動方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/542231 | 2014-11-14 | ||
US14/542,231 US11088609B2 (en) | 2014-11-14 | 2014-11-14 | Low noise power supply MOSFET gate drive scheme |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016096716A JP2016096716A (ja) | 2016-05-26 |
JP7009045B2 true JP7009045B2 (ja) | 2022-01-25 |
Family
ID=54544981
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015223302A Active JP7009045B2 (ja) | 2014-11-14 | 2015-11-13 | スイッチング電源システム及びスイッチング電源のmosfetゲート駆動方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US11088609B2 (ja) |
EP (1) | EP3021487A1 (ja) |
JP (1) | JP7009045B2 (ja) |
CN (1) | CN105610304B (ja) |
TW (1) | TW201626700A (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI692187B (zh) * | 2018-12-24 | 2020-04-21 | 財團法人工業技術研究院 | 驅動裝置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003188699A (ja) | 2001-12-14 | 2003-07-04 | Nissan Motor Co Ltd | 電流制御型半導体素子用駆動回路 |
JP2008519529A (ja) | 2004-11-05 | 2008-06-05 | インターナショナル レクティファイアー コーポレイション | dI/dtを低下させ、遅延補正を施すドライバおよび方法 |
JP2008177853A (ja) | 2007-01-18 | 2008-07-31 | Toyota Central R&D Labs Inc | 電力用半導体素子の駆動回路 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
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US6051995A (en) | 1998-09-11 | 2000-04-18 | Sharp Electronics Corporation | Constant impedance, low noise CMOS buffer |
JP4556331B2 (ja) * | 2001-01-22 | 2010-10-06 | 株式会社豊田自動織機 | スイッチング電源回路 |
JP2003169465A (ja) * | 2001-11-30 | 2003-06-13 | Toshiba Corp | ゲート駆動回路、および電力変換装置 |
US6975098B2 (en) | 2002-01-31 | 2005-12-13 | Vlt, Inc. | Factorized power architecture with point of load sine amplitude converters |
US8134851B2 (en) | 2003-11-04 | 2012-03-13 | International Rectifier Corporation | Secondary side synchronous rectifier for resonant converter |
JP4832731B2 (ja) | 2004-07-07 | 2011-12-07 | 株式会社東芝 | 電力用半導体装置 |
CN101142730A (zh) * | 2004-11-05 | 2008-03-12 | 国际整流器公司 | 具有减小的di/dt和延迟补偿的驱动电路及方法 |
US7479770B2 (en) * | 2005-04-28 | 2009-01-20 | Texas Instruments Incorporated | System and method for driving a power field-effect transistor (FET) |
US7365584B2 (en) * | 2006-06-02 | 2008-04-29 | Freescale Semiconductor, Inc. | Slew-rate control apparatus and methods for a power transistor to reduce voltage transients during inductive flyback |
JP4925841B2 (ja) * | 2007-01-19 | 2012-05-09 | 三菱電機株式会社 | 電力用半導体素子の駆動回路および電力変換装置 |
US7812647B2 (en) | 2007-05-21 | 2010-10-12 | Advanced Analogic Technologies, Inc. | MOSFET gate drive with reduced power loss |
US8102192B2 (en) | 2007-07-27 | 2012-01-24 | International Rectifier Corporation | DC brushed motor drive with circuit to reduce di/dt and EMI, for MOSFET Vth detection, voltage source detection, and overpower protection |
JP2009071956A (ja) | 2007-09-12 | 2009-04-02 | Mitsubishi Electric Corp | ゲート駆動回路 |
US8305053B2 (en) * | 2010-08-18 | 2012-11-06 | Texas Instruments Incorporated | System and method for controlling a power switch in a power supply system |
JP5532062B2 (ja) | 2012-02-13 | 2014-06-25 | 株式会社デンソー | 逆導通スイッチング素子の駆動装置 |
-
2014
- 2014-11-14 US US14/542,231 patent/US11088609B2/en active Active
-
2015
- 2015-09-04 TW TW104129353A patent/TW201626700A/zh unknown
- 2015-11-13 EP EP15194579.7A patent/EP3021487A1/en not_active Withdrawn
- 2015-11-13 JP JP2015223302A patent/JP7009045B2/ja active Active
- 2015-11-13 CN CN201510773186.9A patent/CN105610304B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003188699A (ja) | 2001-12-14 | 2003-07-04 | Nissan Motor Co Ltd | 電流制御型半導体素子用駆動回路 |
JP2008519529A (ja) | 2004-11-05 | 2008-06-05 | インターナショナル レクティファイアー コーポレイション | dI/dtを低下させ、遅延補正を施すドライバおよび方法 |
JP2008177853A (ja) | 2007-01-18 | 2008-07-31 | Toyota Central R&D Labs Inc | 電力用半導体素子の駆動回路 |
Also Published As
Publication number | Publication date |
---|---|
EP3021487A1 (en) | 2016-05-18 |
US20160141948A1 (en) | 2016-05-19 |
CN105610304B (zh) | 2019-11-19 |
TW201626700A (zh) | 2016-07-16 |
CN105610304A (zh) | 2016-05-25 |
US11088609B2 (en) | 2021-08-10 |
JP2016096716A (ja) | 2016-05-26 |
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