JP2016092182A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2016092182A JP2016092182A JP2014224330A JP2014224330A JP2016092182A JP 2016092182 A JP2016092182 A JP 2016092182A JP 2014224330 A JP2014224330 A JP 2014224330A JP 2014224330 A JP2014224330 A JP 2014224330A JP 2016092182 A JP2016092182 A JP 2016092182A
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- oxide film
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- mos transistor
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 14
- 230000015556 catabolic process Effects 0.000 claims description 13
- 238000000034 method Methods 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 4
- 229920005591 polysilicon Polymers 0.000 abstract description 4
- 230000006866 deterioration Effects 0.000 abstract description 3
- 238000009792 diffusion process Methods 0.000 description 30
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000005856 abnormality Effects 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000005530 etching Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000007261 regionalization Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
- H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/408—Electrodes ; Multistep manufacturing processes therefor with an insulating layer with a particular dielectric or electrostatic property, e.g. with static charges or for controlling trapped charges or moving ions, or with a plate acting on the insulator potential or the insulator charges, e.g. for controlling charges effect or potential distribution in the insulating layer, or with a semi-insulating layer contacting directly the semiconductor surface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66659—Lateral single gate silicon transistors with asymmetry in the channel direction, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
【解決手段】LOCOSドレイン型MOSトランジスタのドレイン側の能動領域上に、ゲート酸化膜よりも厚いドレイン酸化膜を形成することにより、ゲート電極がドレインの能動領域に至ってもMOSトランジスタの耐圧は低下しない。
【選択図】 図1
Description
LOCOSドレイン型MOSトランジスタに対しては、ドレイン耐圧のばらつきの低減等様々な工夫がなされてきた。(例えば特許文献1を参照)
LOCOS酸化膜を形成後にシリコン窒化膜、その下に形成されていた、シリコン酸化を除去することで図4(b)の構造を得る。
2 中濃度N型拡散層
3 低濃度N型拡散層
4 ドレイン側の高濃度N型拡散層
5 ソース側の高濃度N型拡散層
6A ゲート酸化膜
6B、9 ドレイン酸化膜
7 LOCOS酸化膜
8 ゲート電極
10 シリコン酸化膜
11 シリコン窒化膜
Claims (3)
- チャネル領域の表面に設けられたゲート酸化膜と、
前記ゲート酸化膜に連続してドレイン側に配置された前記ゲート酸化膜よりも膜厚の厚いLOCOS酸化膜と、を有するMOSトランジスタを含む半導体装置であって、
前記LOCOS酸化膜を前記チャネル領域とは反対の方向に超えた、前記MOSトランジスタのドレイン側の能動領域の表面に、膜厚が前記ゲート酸化膜よりも厚く、前記LOCOS酸化膜よりも薄いドレイン酸化膜が、前記LOCOS酸化膜に連続して配置されていることを特徴とする半導体装置。 - 前記ドレイン酸化膜の耐圧が、前記ドレインの耐圧より高いことを特徴とする請求項1記載の半導体装置。
- 前記LOCOS酸化膜に対して、前記ゲート電極は前記LOCOS酸化膜のチャネル方向の長さの1/2以上の重なり長さを有することを特徴とする請求項1記載の半導体装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014224330A JP6427388B2 (ja) | 2014-11-04 | 2014-11-04 | 半導体装置 |
US14/927,056 US9818832B2 (en) | 2014-11-04 | 2015-10-29 | Semiconductor device |
CN201510731674.3A CN105576029B (zh) | 2014-11-04 | 2015-11-02 | 半导体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014224330A JP6427388B2 (ja) | 2014-11-04 | 2014-11-04 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016092182A true JP2016092182A (ja) | 2016-05-23 |
JP6427388B2 JP6427388B2 (ja) | 2018-11-21 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2014224330A Expired - Fee Related JP6427388B2 (ja) | 2014-11-04 | 2014-11-04 | 半導体装置 |
Country Status (3)
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US (1) | US9818832B2 (ja) |
JP (1) | JP6427388B2 (ja) |
CN (1) | CN105576029B (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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US10050115B2 (en) * | 2014-12-30 | 2018-08-14 | Globalfoundries Inc. | Tapered gate oxide in LDMOS devices |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003309258A (ja) * | 2002-04-17 | 2003-10-31 | Sanyo Electric Co Ltd | Mos半導体装置およびその製造方法 |
US20080023785A1 (en) * | 2006-07-28 | 2008-01-31 | Alpha & Omega Semiconductor, Ltd | Bottom source LDMOSFET structure and method |
JP2008091689A (ja) * | 2006-10-03 | 2008-04-17 | Sharp Corp | 横型二重拡散型mosトランジスタおよびその製造方法、並びに集積回路 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5366916A (en) * | 1993-02-04 | 1994-11-22 | Delco Electronics Corporation | Method of making a high voltage implanted channel device for VLSI and ULSI processes |
EP0965145B1 (en) * | 1997-12-24 | 2011-09-21 | Nxp B.V. | A high voltage thin film transistor with improved on-state characteristics and method for making same |
US8278712B2 (en) * | 2007-09-25 | 2012-10-02 | O2Micro Inc. | Power MOSFET integration |
US8119507B2 (en) * | 2008-10-23 | 2012-02-21 | Silergy Technology | Lateral double-diffused metal oxide semiconductor (LDMOS) transistors |
-
2014
- 2014-11-04 JP JP2014224330A patent/JP6427388B2/ja not_active Expired - Fee Related
-
2015
- 2015-10-29 US US14/927,056 patent/US9818832B2/en active Active
- 2015-11-02 CN CN201510731674.3A patent/CN105576029B/zh not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003309258A (ja) * | 2002-04-17 | 2003-10-31 | Sanyo Electric Co Ltd | Mos半導体装置およびその製造方法 |
US20080023785A1 (en) * | 2006-07-28 | 2008-01-31 | Alpha & Omega Semiconductor, Ltd | Bottom source LDMOSFET structure and method |
JP2008091689A (ja) * | 2006-10-03 | 2008-04-17 | Sharp Corp | 横型二重拡散型mosトランジスタおよびその製造方法、並びに集積回路 |
Also Published As
Publication number | Publication date |
---|---|
US20160126313A1 (en) | 2016-05-05 |
US9818832B2 (en) | 2017-11-14 |
CN105576029A (zh) | 2016-05-11 |
CN105576029B (zh) | 2020-09-04 |
JP6427388B2 (ja) | 2018-11-21 |
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