JP2016046377A5 - - Google Patents

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Publication number
JP2016046377A5
JP2016046377A5 JP2014169454A JP2014169454A JP2016046377A5 JP 2016046377 A5 JP2016046377 A5 JP 2016046377A5 JP 2014169454 A JP2014169454 A JP 2014169454A JP 2014169454 A JP2014169454 A JP 2014169454A JP 2016046377 A5 JP2016046377 A5 JP 2016046377A5
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JP
Japan
Prior art keywords
electrode
semiconductor substrate
trench
protrusion
schottky
Prior art date
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Application number
JP2014169454A
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English (en)
Japanese (ja)
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JP2016046377A (ja
JP6036765B2 (ja
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Priority claimed from JP2014169454A external-priority patent/JP6036765B2/ja
Priority to JP2014169454A priority Critical patent/JP6036765B2/ja
Priority to CN201580045037.9A priority patent/CN106575668B/zh
Priority to US15/125,857 priority patent/US9941273B2/en
Priority to DE112015003835.3T priority patent/DE112015003835B4/de
Priority to KR1020167031726A priority patent/KR101868730B1/ko
Priority to PCT/JP2015/068095 priority patent/WO2016027564A1/ja
Priority to TW104126111A priority patent/TWI587478B/zh
Publication of JP2016046377A publication Critical patent/JP2016046377A/ja
Publication of JP2016046377A5 publication Critical patent/JP2016046377A5/ja
Publication of JP6036765B2 publication Critical patent/JP6036765B2/ja
Application granted granted Critical
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2014169454A 2014-08-22 2014-08-22 半導体装置及び半導体装置の製造方法 Active JP6036765B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2014169454A JP6036765B2 (ja) 2014-08-22 2014-08-22 半導体装置及び半導体装置の製造方法
KR1020167031726A KR101868730B1 (ko) 2014-08-22 2015-06-23 반도체 장치 및 반도체 장치의 제조 방법
US15/125,857 US9941273B2 (en) 2014-08-22 2015-06-23 Semiconductor device and method of manufacturing the semiconductor device
DE112015003835.3T DE112015003835B4 (de) 2014-08-22 2015-06-23 Halbleitervorrichtung und verfahren zur herstellung der halbleitervorrichtung
CN201580045037.9A CN106575668B (zh) 2014-08-22 2015-06-23 半导体装置以及半导体装置的制造方法
PCT/JP2015/068095 WO2016027564A1 (ja) 2014-08-22 2015-06-23 半導体装置及び半導体装置の製造方法
TW104126111A TWI587478B (zh) 2014-08-22 2015-08-11 Semiconductor device and method for manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014169454A JP6036765B2 (ja) 2014-08-22 2014-08-22 半導体装置及び半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2016046377A JP2016046377A (ja) 2016-04-04
JP2016046377A5 true JP2016046377A5 (enExample) 2016-10-13
JP6036765B2 JP6036765B2 (ja) 2016-11-30

Family

ID=55350516

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014169454A Active JP6036765B2 (ja) 2014-08-22 2014-08-22 半導体装置及び半導体装置の製造方法

Country Status (7)

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US (1) US9941273B2 (enExample)
JP (1) JP6036765B2 (enExample)
KR (1) KR101868730B1 (enExample)
CN (1) CN106575668B (enExample)
DE (1) DE112015003835B4 (enExample)
TW (1) TWI587478B (enExample)
WO (1) WO2016027564A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6299789B2 (ja) * 2016-03-09 2018-03-28 トヨタ自動車株式会社 スイッチング素子
JP6673088B2 (ja) * 2016-08-05 2020-03-25 トヨタ自動車株式会社 半導体装置
JP6784164B2 (ja) * 2016-12-15 2020-11-11 株式会社豊田中央研究所 半導体装置
DE102017118665A1 (de) 2017-08-16 2019-02-21 Infineon Technologies Ag Rc-igbt
JP6776205B2 (ja) * 2017-09-20 2020-10-28 株式会社東芝 半導体装置の製造方法
WO2019150541A1 (ja) 2018-02-02 2019-08-08 三菱電機株式会社 半導体装置の製造方法
JP6964538B2 (ja) 2018-02-28 2021-11-10 株式会社 日立パワーデバイス 半導体装置および電力変換装置
US11417762B2 (en) * 2019-06-26 2022-08-16 Skyworks Solutions, Inc. Switch with integrated Schottky barrier contact
DE102021104532B4 (de) * 2021-02-25 2025-06-18 Infineon Technologies Ag Mesa-Kontakt für MOS-gesteuerte Leistungshalbleitervorrichtung undVerfahren zum Herstellen einer Leistungshalbleitervorrichtung
CN113921614B (zh) * 2021-12-13 2022-03-25 捷捷微电(上海)科技有限公司 一种半导体功率器件结构及其制造方法
CN117012830A (zh) * 2023-08-18 2023-11-07 广微集成技术（深圳）有限公司 一种屏蔽栅沟槽vdmos器件及其制造方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6593620B1 (en) * 2000-10-06 2003-07-15 General Semiconductor, Inc. Trench DMOS transistor with embedded trench schottky rectifier
US6998678B2 (en) * 2001-05-17 2006-02-14 Infineon Technologies Ag Semiconductor arrangement with a MOS-transistor and a parallel Schottky-diode
AU2003260899A1 (en) * 2002-10-04 2004-04-23 Koninklijke Philips Electronics N.V. Power semiconductor devices
JP4406535B2 (ja) * 2003-01-14 2010-01-27 新電元工業株式会社 ショットキーダイオード付きトランジスタ
JP4799829B2 (ja) * 2003-08-27 2011-10-26 三菱電機株式会社 絶縁ゲート型トランジスタ及びインバータ回路
JP4829473B2 (ja) 2004-01-21 2011-12-07 オンセミコンダクター・トレーディング・リミテッド 絶縁ゲート型半導体装置およびその製造方法
JP4935160B2 (ja) * 2006-04-11 2012-05-23 株式会社デンソー 炭化珪素半導体装置およびその製造方法
CN101548386B (zh) * 2006-12-04 2011-11-09 三垦电气株式会社 绝缘栅型场效应晶体管及其制造方法
US8049276B2 (en) * 2009-06-12 2011-11-01 Fairchild Semiconductor Corporation Reduced process sensitivity of electrode-semiconductor rectifiers
JP5511308B2 (ja) * 2009-10-26 2014-06-04 三菱電機株式会社 半導体装置およびその製造方法
JP2011199060A (ja) * 2010-03-19 2011-10-06 Toshiba Corp 半導体装置及びその製造方法
CN102859689B (zh) * 2010-04-28 2015-07-01 日产自动车株式会社 半导体装置
US8580667B2 (en) * 2010-12-14 2013-11-12 Alpha And Omega Semiconductor Incorporated Self aligned trench MOSFET with integrated diode
WO2013014943A2 (en) 2011-07-27 2013-01-31 Kabushiki Kaisha Toyota Chuo Kenkyusho Diode, semiconductor device, and mosfet
JP5895947B2 (ja) * 2012-02-14 2016-03-30 トヨタ自動車株式会社 Ｉｇｂｔの製造方法
US8809948B1 (en) * 2012-12-21 2014-08-19 Alpha And Omega Semiconductor Incorporated Device structure and methods of making high density MOSFETs for load switch and DC-DC applications
US8951867B2 (en) * 2012-12-21 2015-02-10 Alpha And Omega Semiconductor Incorporated High density trench-based power MOSFETs with self-aligned active contacts and method for making such devices
JP2014157896A (ja) * 2013-02-15 2014-08-28 Toyota Central R&D Labs Inc 半導体装置とその製造方法

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