JP2016045206A5 - - Google Patents

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Publication number
JP2016045206A5
JP2016045206A5 JP2015162373A JP2015162373A JP2016045206A5 JP 2016045206 A5 JP2016045206 A5 JP 2016045206A5 JP 2015162373 A JP2015162373 A JP 2015162373A JP 2015162373 A JP2015162373 A JP 2015162373A JP 2016045206 A5 JP2016045206 A5 JP 2016045206A5
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JP
Japan
Prior art keywords
detector
sample
image
electron beam
predetermined threshold
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JP2015162373A
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English (en)
Japanese (ja)
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JP2016045206A (ja
JP6253618B2 (ja
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Priority claimed from EP14182139.7A external-priority patent/EP2991098A1/en
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Publication of JP2016045206A5 publication Critical patent/JP2016045206A5/ja
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Publication of JP6253618B2 publication Critical patent/JP6253618B2/ja
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JP2015162373A 2014-08-25 2015-08-20 Ｅｂｓｐパターンの取得方法 Active JP6253618B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP14182139.7 2014-08-25
EP14182139.7A EP2991098A1 (en) 2014-08-25 2014-08-25 Method of acquiring EBSP patterns

Publications (3)

Publication Number Publication Date
JP2016045206A JP2016045206A (ja) 2016-04-04
JP2016045206A5 true JP2016045206A5 (enExample) 2017-09-28
JP6253618B2 JP6253618B2 (ja) 2017-12-27

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Family Applications (1)

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JP2015162373A Active JP6253618B2 (ja) 2014-08-25 2015-08-20 Ｅｂｓｐパターンの取得方法

Country Status (4)

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US (1) US9618463B2 (enExample)
EP (2) EP2991098A1 (enExample)
JP (1) JP6253618B2 (enExample)
CN (1) CN105388173A (enExample)

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US10375379B2 (en) * 2015-09-17 2019-08-06 Innolux Corporation 3D display device
GB2562694B (en) * 2016-12-12 2020-12-30 Vg Systems Ltd Image capture assembly and method for electron back scatter diffraction
JP6823563B2 (ja) 2017-07-31 2021-02-03 株式会社日立製作所 走査電子顕微鏡および画像処理装置
JP6521205B1 (ja) * 2017-10-25 2019-05-29 日本製鉄株式会社 結晶方位図生成装置、荷電粒子線装置、結晶方位図生成方法およびプログラム
EP3506332B1 (en) * 2017-12-29 2020-12-23 Jeol Ltd. Scanning electron microscope and analysis method
DE102018204683B3 (de) * 2018-03-27 2019-08-08 Carl Zeiss Microscopy Gmbh Elektronenstrahlmikroskop
US10784076B2 (en) * 2018-07-05 2020-09-22 Fei Company 3D defect characterization of crystalline samples in a scanning type electron microscope
CN109465531B (zh) * 2018-11-20 2020-07-03 清华大学 一种电子束熔丝沉积增材制造实时监控系统
EP3705877A1 (en) 2019-03-04 2020-09-09 VG Systems Limited Methods and apparatus for electron backscatter diffraction sample characterisation
EP3736561B1 (en) * 2019-05-08 2021-05-05 Bruker Nano GmbH Method for improving an ebsd/tkd map
US11791131B2 (en) * 2019-05-23 2023-10-17 Hitachi High-Tech Corporation Charged particle beam apparatus and method for controlling charged particle beam apparatus
US11114275B2 (en) * 2019-07-02 2021-09-07 Fei Company Methods and systems for acquiring electron backscatter diffraction patterns
GB2592558B (en) 2019-11-07 2022-08-24 Vg Systems Ltd Charged particle detection for spectroscopic techniques
DE102019133658A1 (de) * 2019-12-10 2021-06-10 Carl Zeiss Smt Gmbh Vorrichtung und Verfahren zum Bearbeiten einer mikrostrukturierten Komponente
US11069509B1 (en) * 2020-03-16 2021-07-20 Fei Company Method and system for backside planar view lamella preparation
EP3882951A1 (en) * 2020-03-19 2021-09-22 FEI Company Charged particle beam device for inspection of a specimen with a plurality of charged particle beamlets
GB202006638D0 (en) * 2020-05-05 2020-06-17 Oxford Instr Nanotechnology Ltd Improved camera for electron diffraction pattern analysis
US11195693B1 (en) * 2020-05-29 2021-12-07 Fei Company Method and system for dynamic band contrast imaging
EP4530616A1 (en) * 2023-09-29 2025-04-02 FEI Company Methods and systems of electron diffraction

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7342225B2 (en) * 2002-02-22 2008-03-11 Agere Systems, Inc. Crystallographic metrology and process control
US7026009B2 (en) * 2002-03-27 2006-04-11 Applied Materials, Inc. Evaluation of chamber components having textured coatings
JP4022512B2 (ja) * 2003-11-14 2007-12-19 Ｔｄｋ株式会社 結晶解析方法及び結晶解析装置
DE102006043895B9 (de) * 2006-09-19 2012-02-09 Carl Zeiss Nts Gmbh Elektronenmikroskop zum Inspizieren und Bearbeiten eines Objekts mit miniaturisierten Strukturen
EP2151848A1 (en) * 2008-08-07 2010-02-10 FEI Company Method of machining a work piece with a focused particle beam
JP5536085B2 (ja) * 2008-11-06 2014-07-02 ナノメガス エスピーアールエル 電子線回折による高スループット結晶構造解析のための方法及びデバイス
WO2011015235A1 (en) 2009-08-04 2011-02-10 Organisation Europeenne Pour La Recherche Nucleaire Pixilated radiation sensing device
JP5595054B2 (ja) * 2010-01-29 2014-09-24 株式会社日立ハイテクサイエンス 電子顕微鏡及び試料分析方法
GB201105609D0 (en) * 2011-04-04 2011-05-18 Meaden Graham M Apparatus and method for determining crystallographic parameters using divergent beam diffraction patterns
GB201117256D0 (en) * 2011-10-06 2011-11-16 Oxford Instr Nanotechnology Tools Ltd Apparatus and method for performing microdiffraction analysis
JP6216515B2 (ja) * 2013-01-30 2017-10-18 株式会社日立ハイテクノロジーズ 電子ビーム装置、及び電子ビーム観察方法

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