JP2016039352A - 基板液処理装置及び基板液処理方法並びに基板液処理プログラムを記憶したコンピュータ読み取り可能な記憶媒体 - Google Patents
基板液処理装置及び基板液処理方法並びに基板液処理プログラムを記憶したコンピュータ読み取り可能な記憶媒体 Download PDFInfo
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- 239000007788 liquid Substances 0.000 title claims abstract description 260
- 239000000758 substrate Substances 0.000 title claims abstract description 120
- 238000003672 processing method Methods 0.000 title claims description 9
- 238000000034 method Methods 0.000 claims abstract description 23
- 238000007865 diluting Methods 0.000 claims abstract description 8
- 239000003085 diluting agent Substances 0.000 claims description 29
- 238000010790 dilution Methods 0.000 claims description 26
- 239000012895 dilution Substances 0.000 claims description 26
- 238000009835 boiling Methods 0.000 claims description 21
- 238000001514 detection method Methods 0.000 claims description 12
- 239000000243 solution Substances 0.000 claims description 7
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 16
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 8
- 239000007864 aqueous solution Substances 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- 230000007723 transport mechanism Effects 0.000 description 3
- 238000007599 discharging Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000010129 solution processing Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
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Abstract
Description
2 基板
3 液処理部
4 処理液供給部
5 希釈液供給部
6 処理液排出部
7 制御部
21 濃度センサー(濃度検出部)
28 大気圧センサー(大気圧検出部)
Claims (11)
- 基板を処理液で処理する液処理部と、
前記処理液を供給する処理液供給部と、
前記処理液を希釈するための希釈液を供給する希釈液供給部と、
前記希釈液供給部を制御する制御部と、
前記処理液の濃度を検出する濃度検出部と、
大気圧を検出する大気圧検出部と
を有し、
前記制御部は、前記濃度検出部と大気圧検出部からの信号を取得し、取得した前記処理液の濃度が予め設定された濃度(設定濃度)になるように前記希釈液供給部から供給する前記希釈液の量を制御することとし、前記設定濃度を、取得した大気圧に応じて補正することを特徴とする基板液処理装置。 - 前記処理液供給部は、前記処理液を所定温度で沸騰させることにより前記処理液の濃度を前記所定温度における濃度として前記液処理部に供給するように構成し、
前記制御部は、前記設定濃度を、予め設定された大気圧における前記所定温度の濃度とすることを特徴とする請求項1に記載の基板液処理装置。 - 前記制御部は、前記設定濃度を、取得した大気圧における前記処理液の沸点に対応する前記処理液の濃度に補正することを特徴とする請求項2に記載の基板液処理装置。
- 前記希釈液として、前記処理液よりも沸点の低い液体を用いることを特徴とする請求項2又は請求項3に記載の基板液処理装置。
- 前記制御部は、前記設定濃度を補正した場合に、補正した濃度に応じて前記液処理部で前記基板を処理する時間を変更することを特徴とする請求項1〜請求項4のいずれかに記載の基板液処理装置。
- 基板を処理する処理液の濃度と大気圧とを検出し、
検出した前記処理液の濃度が予め設定された濃度(設定濃度)になるように前記処理液を希釈液で希釈して前記基板を処理することとし、
前記設定濃度を、検出した大気圧に応じて補正することを特徴とする基板液処理方法。 - 前記処理液を所定温度で沸騰させることにより前記処理液の濃度を前記所定温度における濃度として前記基板に供給して前記基板を処理することとし、
前記設定濃度を、予め設定された大気圧における前記所定温度の濃度とすることを特徴とする請求項6に記載の基板液処理方法。 - 前記設定濃度を、検出した大気圧における前記処理液の沸点に対応する前記処理液の濃度に補正することを特徴とする請求項7に記載の基板液処理方法。
- 前記希釈液として、前記処理液よりも沸点の低い液体を用いることを特徴とする請求項7又は請求項8に記載の基板液処理方法。
- 前記設定濃度を補正した場合に、補正した濃度に応じて前記液処理部で前記基板を処理する時間を変更することを特徴とする請求項6〜請求項9のいずれかに記載の基板液処理方法。
- 基板を処理液で処理する液処理部と、
前記処理液を供給する処理液供給部と、
前記処理液を希釈するための希釈液を供給する希釈液供給部と、
を有する基板液処理装置を用いて前記基板を液処理する基板液処理プログラムを記憶したコンピュータ読み取り可能な記憶媒体において、
前記処理液の濃度と大気圧とを検出させ、検出された前記処理液の濃度が予め設定された濃度(設定濃度)になるように前記希釈液供給部から供給する前記希釈液の量を制御させることとし、前記設定濃度を、検出された大気圧に応じて補正させることを特徴とする基板液処理プログラムを記憶したコンピュータ読み取り可能な記憶媒体。
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JP2014163834A JP6244277B2 (ja) | 2014-08-11 | 2014-08-11 | 基板液処理装置及び基板液処理方法並びに基板液処理プログラムを記憶したコンピュータ読み取り可能な記憶媒体 |
US14/813,469 US10460964B2 (en) | 2014-08-11 | 2015-07-30 | Substrate liquid processing apparatus and method, and computer-readable storage medium stored with substrate liquid processing program |
KR1020150111573A KR102459566B1 (ko) | 2014-08-11 | 2015-08-07 | 기판 액처리 장치, 기판 액처리 방법 및 기판 액처리 프로그램을 기억한 컴퓨터 판독 가능한 기억 매체 |
CN201510490201.9A CN105374712B (zh) | 2014-08-11 | 2015-08-11 | 基板液体处理装置和基板液体处理方法 |
US16/572,937 US11056360B2 (en) | 2014-08-11 | 2019-09-17 | Substrate liquid processing apparatus and method, and computer-redable storage medium stored with substrate liquid processing program |
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Cited By (6)
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JP2016119435A (ja) * | 2014-12-24 | 2016-06-30 | 東京エレクトロン株式会社 | 基板液処理装置及び基板液処理方法並びに基板液処理プログラムを記憶したコンピュータ読み取り可能な記憶媒体 |
JP2016184649A (ja) * | 2015-03-26 | 2016-10-20 | 東京エレクトロン株式会社 | 基板液処理装置及び基板液処理方法並びに基板液処理プログラムを記憶したコンピュータ読み取り可能な記憶媒体 |
WO2017169155A1 (ja) * | 2016-03-31 | 2017-10-05 | 東京エレクトロン株式会社 | 基板液処理装置及び基板液処理方法並びに基板液処理プログラムを記憶したコンピュータ読み取り可能な記憶媒体 |
JP2019029417A (ja) * | 2017-07-26 | 2019-02-21 | 東京エレクトロン株式会社 | 基板液処理方法、基板液処理装置及び記憶媒体 |
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US11056360B2 (en) | 2021-07-06 |
US20160042981A1 (en) | 2016-02-11 |
KR102459566B1 (ko) | 2022-10-26 |
KR20160019379A (ko) | 2016-02-19 |
JP6244277B2 (ja) | 2017-12-06 |
US10460964B2 (en) | 2019-10-29 |
US20200013642A1 (en) | 2020-01-09 |
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