JP2015534271A - Ｃｍｏｓイメージセンサの列共有画素ユニットおよび画素アレイ - Google Patents

Ｃｍｏｓイメージセンサの列共有画素ユニットおよび画素アレイ Download PDF

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Publication number
JP2015534271A
JP2015534271A JP2015532273A JP2015532273A JP2015534271A JP 2015534271 A JP2015534271 A JP 2015534271A JP 2015532273 A JP2015532273 A JP 2015532273A JP 2015532273 A JP2015532273 A JP 2015532273A JP 2015534271 A JP2015534271 A JP 2015534271A
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JP
Japan
Prior art keywords
pixel
column
image sensor
pixel array
cmos image
Prior art date
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Pending
Application number
JP2015532273A
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English (en)
Japanese (ja)
Inventor
同▲輝▼ 郭
同▲輝▼ 郭
杰 ▲陳▼
杰 ▲陳▼
志碧 ▲劉▼
志碧 ▲劉▼
章曲 ▲曠▼
章曲 ▲曠▼
冕 唐
冕 唐
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Beijing Superpix Micro Technology Co Ltd
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Beijing Superpix Micro Technology Co Ltd
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Publication date
Application filed by Beijing Superpix Micro Technology Co Ltd filed Critical Beijing Superpix Micro Technology Co Ltd
Publication of JP2015534271A publication Critical patent/JP2015534271A/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14641—Electronic components shared by two or more pixel-elements, e.g. one amplifier shared by two pixel elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2015532273A 2012-09-24 2012-12-14 Ｃｍｏｓイメージセンサの列共有画素ユニットおよび画素アレイ Pending JP2015534271A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
CN201210359361.6 2012-09-24
CN201210359361.6A CN102856339B (zh) 2012-09-24 2012-09-24 Cmos图像传感器列共享像素单元及像素阵列
PCT/CN2012/086673 WO2014044003A1 (zh) 2012-09-24 2012-12-14 Cmos图像传感器列共享像素单元及像素阵列

Publications (1)

Publication Number Publication Date
JP2015534271A true JP2015534271A (ja) 2015-11-26

Family

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Family Applications (1)

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JP2015532273A Pending JP2015534271A (ja) 2012-09-24 2012-12-14 Ｃｍｏｓイメージセンサの列共有画素ユニットおよび画素アレイ

Country Status (4)

Country Link
JP (1) JP2015534271A (zh)
KR (1) KR20150063365A (zh)
CN (1) CN102856339B (zh)
WO (1) WO2014044003A1 (zh)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103165636B (zh) * 2013-03-21 2015-10-21 北京思比科微电子技术股份有限公司 Cmos图像传感器的像素单元组及cmos图像传感器
CN103137642B (zh) * 2013-03-21 2015-11-18 北京思比科微电子技术股份有限公司 Cmos图像传感器的像素单元及cmos图像传感器
CN103929600B (zh) * 2014-04-30 2017-03-15 北京思比科微电子技术股份有限公司 高灵敏度cmos图像传感器共享型像素结构
WO2021031557A1 (zh) * 2019-08-22 2021-02-25 神亚科技股份有限公司 影像传感器及其制造方法
CN110809883B (zh) * 2019-09-25 2021-12-21 深圳市汇顶科技股份有限公司 电子装置、图像传感器及其像素阵列和操作方法
CN111652188A (zh) * 2020-06-24 2020-09-11 上海思立微电子科技有限公司 Tft工艺制作的感光传感器、光学指纹传感器及电子设备
CN112738433B (zh) * 2020-12-29 2023-04-07 上海集成电路装备材料产业创新中心有限公司 Cis像素阵列任意像元完全耗尽电压的测试电路

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006025079A1 (ja) * 2004-07-20 2006-03-09 Fujitsu Limited Ｃｍｏｓ撮像素子
CN102158663A (zh) * 2011-04-15 2011-08-17 北京思比科微电子技术股份有限公司 Cmos图像传感器像素及其控制时序

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3031606B2 (ja) * 1995-08-02 2000-04-10 キヤノン株式会社 固体撮像装置と画像撮像装置
US7714917B2 (en) * 2005-08-30 2010-05-11 Aptina Imaging Corporation Method and apparatus providing a two-way shared storage gate on a four-way shared pixel
CN102595057B (zh) * 2012-02-27 2014-09-24 北京思比科微电子技术股份有限公司 Cmos图像传感器像素及其控制时序

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006025079A1 (ja) * 2004-07-20 2006-03-09 Fujitsu Limited Ｃｍｏｓ撮像素子
CN102158663A (zh) * 2011-04-15 2011-08-17 北京思比科微电子技术股份有限公司 Cmos图像传感器像素及其控制时序

Also Published As

Publication number Publication date
CN102856339B (zh) 2015-09-02
CN102856339A (zh) 2013-01-02
KR20150063365A (ko) 2015-06-09
WO2014044003A1 (zh) 2014-03-27

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