JP2015531491A5 - - Google Patents

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Publication number
JP2015531491A5
JP2015531491A5 JP2015536256A JP2015536256A JP2015531491A5 JP 2015531491 A5 JP2015531491 A5 JP 2015531491A5 JP 2015536256 A JP2015536256 A JP 2015536256A JP 2015536256 A JP2015536256 A JP 2015536256A JP 2015531491 A5 JP2015531491 A5 JP 2015531491A5
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JP
Japan
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nanowires
nanowire
substance
different
sample
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JP2015536256A
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Japanese (ja)
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JP2015531491A (ja
JP6533465B2 (ja
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Priority claimed from PCT/IB2013/059160 external-priority patent/WO2014060894A2/en
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Publication of JP2015531491A5 publication Critical patent/JP2015531491A5/ja
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JP2015536256A 2012-10-16 2013-10-07 ナノワイヤプラットフォームに基づく広いダイナミックレンジを持つ流体センサ Active JP6533465B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261714418P 2012-10-16 2012-10-16
US61/714,418 2012-10-16
PCT/IB2013/059160 WO2014060894A2 (en) 2012-10-16 2013-10-07 Wide dynamic range fluid sensor based on nanowire platform

Publications (3)

Publication Number Publication Date
JP2015531491A JP2015531491A (ja) 2015-11-02
JP2015531491A5 true JP2015531491A5 (https=) 2016-11-24
JP6533465B2 JP6533465B2 (ja) 2019-06-19

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JP2015536256A Active JP6533465B2 (ja) 2012-10-16 2013-10-07 ナノワイヤプラットフォームに基づく広いダイナミックレンジを持つ流体センサ

Country Status (8)

Country Link
US (1) US10126263B2 (https=)
EP (1) EP2909617A2 (https=)
JP (1) JP6533465B2 (https=)
CN (1) CN104737009B (https=)
BR (1) BR112015008202B1 (https=)
MX (1) MX356580B (https=)
RU (1) RU2638130C2 (https=)
WO (1) WO2014060894A2 (https=)

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KR101748314B1 (ko) * 2013-03-14 2017-06-16 휴렛-팩커드 디벨롭먼트 컴퍼니, 엘.피. 물질을 검출하기 위한 디바이스 및 이러한 디바이스를 제조하는 방법
WO2017002854A1 (ja) * 2015-06-30 2017-01-05 富士通株式会社 ガスセンサ及びその使用方法
WO2017049203A1 (en) * 2015-09-16 2017-03-23 Systems And Software Enterprises, Llc Enhanced liquid detection mechanisms for circuit cards
CN105424780B (zh) * 2015-11-26 2018-06-22 深圳代尔夫特电子科技有限公司 一种氮化镓传感器、制备方法和多传感器系统
JP6548178B2 (ja) 2015-12-16 2019-07-24 パナソニックIpマネジメント株式会社 ガスセンサ及びガスセンシングシステム
FR3046243B1 (fr) * 2015-12-24 2017-12-22 Commissariat Energie Atomique Capteur nw-fet comportant au moins deux detecteurs distincts a nanofil de semi-conducteur
CN106290525B (zh) * 2016-08-04 2018-08-28 北京大学 一种带正面栅极调控的纳米线生物传感器件及其制备方法
JP2019190829A (ja) * 2016-08-31 2019-10-31 シャープ株式会社 ナノファイバーセンサ
JP6880930B2 (ja) * 2017-03-30 2021-06-02 セイコーエプソン株式会社 センサー
WO2019107165A1 (ja) * 2017-11-30 2019-06-06 東レ株式会社 回路、検知器、無線通信デバイス、水分検知システム、おむつ、報知システムおよび回路の製造方法
US10788375B2 (en) * 2017-12-07 2020-09-29 Tower Semiconductor Ltd. Apparatus, system and method of a temperature sensor
EP3540422B1 (en) * 2018-03-14 2024-01-03 Sciosense B.V. Monolithic gas sensor arrangement, manufacturing method and measurement method
WO2020102880A1 (en) * 2018-11-20 2020-05-28 National Research Council Of Canada Sensor platform
EP3891497A4 (en) * 2018-12-05 2022-09-28 Femtodx METHODS AND DEVICES FOR DIFFERENTIAL SENSOR MEASUREMENT
EP3997452A4 (en) * 2019-07-12 2023-08-16 Qulab Medical Ltd. ELECTROCHEMICAL FET SENSOR
RU2749070C1 (ru) * 2020-09-17 2021-06-03 Общество С Ограниченной Ответственностью "Крокус Наноэлектроника" (Ооо "Крокус Наноэлектроника") Способ формирования активных структур для микроэлектронных устройств и микроэлектронное устройство, содержащее активные структуры
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RU2764722C1 (ru) * 2021-08-04 2022-01-19 Общество С Ограниченной Ответственностью "Крокус Наноэлектроника" (Ооо "Крокус Наноэлектроника") Способ формирования активных структур для микроэлектронных устройств на кремниевой подложке и микроэлектронное устройство, содержащее сформированные активные структуры
KR102811340B1 (ko) * 2022-06-15 2025-05-21 스웨센시 에이비 Fet 가스 센서 장치

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