JP2015530420A5 - - Google Patents
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- Publication number
- JP2015530420A5 JP2015530420A5 JP2015519449A JP2015519449A JP2015530420A5 JP 2015530420 A5 JP2015530420 A5 JP 2015530420A5 JP 2015519449 A JP2015519449 A JP 2015519449A JP 2015519449 A JP2015519449 A JP 2015519449A JP 2015530420 A5 JP2015530420 A5 JP 2015530420A5
- Authority
- JP
- Japan
- Prior art keywords
- group
- aqueous medium
- cooh
- carboxylic acid
- dissociate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP12175333.9A EP2682441A1 (en) | 2012-07-06 | 2012-07-06 | A chemical mechanical polishing (CMP) composition comprising a non-ionic surfactant and an aromatic compound comprising at least one acid group |
| EP12175333.9 | 2012-07-06 | ||
| PCT/IB2013/055273 WO2014006546A2 (en) | 2012-07-06 | 2013-06-27 | A chemical mechanical polishing (cmp) composition comprising a non-ionic surfactant and an aromatic compound comprising at least one acid group |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015530420A JP2015530420A (ja) | 2015-10-15 |
| JP2015530420A5 true JP2015530420A5 (enExample) | 2016-08-18 |
| JP6185578B2 JP6185578B2 (ja) | 2017-08-23 |
Family
ID=46458354
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015519449A Active JP6185578B2 (ja) | 2012-07-06 | 2013-06-27 | Ｃｍｐ組成物及びそれを使用する方法、半導体装置の製造方法 |
Country Status (10)
| Country | Link |
|---|---|
| EP (2) | EP2682441A1 (enExample) |
| JP (1) | JP6185578B2 (enExample) |
| KR (1) | KR102147073B1 (enExample) |
| CN (1) | CN104412316B (enExample) |
| IL (1) | IL236194B (enExample) |
| MY (1) | MY170292A (enExample) |
| RU (1) | RU2636511C2 (enExample) |
| SG (1) | SG11201408785VA (enExample) |
| TW (1) | TWI601794B (enExample) |
| WO (1) | WO2014006546A2 (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI775722B (zh) * | 2014-12-22 | 2022-09-01 | 德商巴斯夫歐洲公司 | 化學機械拋光（ｃｍｐ）組成物用於拋光含鈷及/或鈷合金之基材的用途 |
| CN109415597B (zh) * | 2016-06-22 | 2021-08-17 | 嘉柏微电子材料股份公司 | 包含含胺的表面活性剂的抛光组合物 |
| CN109251672B (zh) * | 2017-07-13 | 2022-02-18 | 安集微电子科技（上海）股份有限公司 | 一种化学机械抛光液 |
| US10170335B1 (en) | 2017-09-21 | 2019-01-01 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing method for cobalt |
| CN113122143B (zh) * | 2019-12-31 | 2024-03-08 | 安集微电子（上海）有限公司 | 一种化学机械抛光液及其在铜抛光中的应用 |
| CN113122144A (zh) * | 2019-12-31 | 2021-07-16 | 安集微电子（上海）有限公司 | 一种化学机械抛光液 |
| CN112801973B (zh) * | 2021-01-27 | 2022-06-14 | 山东大学 | 一种金刚石线锯表面磨粒分布均匀性评价方法 |
| JP2022131199A (ja) * | 2021-02-26 | 2022-09-07 | 株式会社フジミインコーポレーテッド | 研磨用組成物及び研磨方法 |
| KR20250066152A (ko) | 2023-11-06 | 2025-05-13 | 에스케이엔펄스 주식회사 | 반도체 공정용 연마 조성물 및 이를 이용한 기판의 제조방법 |
| KR20250066153A (ko) | 2023-11-06 | 2025-05-13 | 에스케이엔펄스 주식회사 | 반도체 공정용 연마 조성물 및 이를 이용한 기판의 제조방법 |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5738800A (en) * | 1996-09-27 | 1998-04-14 | Rodel, Inc. | Composition and method for polishing a composite of silica and silicon nitride |
| US6646348B1 (en) * | 2000-07-05 | 2003-11-11 | Cabot Microelectronics Corporation | Silane containing polishing composition for CMP |
| JP3563017B2 (ja) * | 2000-07-19 | 2004-09-08 | ロデール・ニッタ株式会社 | 研磨組成物、研磨組成物の製造方法及びポリシング方法 |
| US6936543B2 (en) * | 2002-06-07 | 2005-08-30 | Cabot Microelectronics Corporation | CMP method utilizing amphiphilic nonionic surfactants |
| US20040175942A1 (en) | 2003-01-03 | 2004-09-09 | Chang Song Y. | Composition and method used for chemical mechanical planarization of metals |
| US7514363B2 (en) * | 2003-10-23 | 2009-04-07 | Dupont Air Products Nanomaterials Llc | Chemical-mechanical planarization composition having benzenesulfonic acid and per-compound oxidizing agents, and associated method for use |
| US20050126588A1 (en) * | 2003-11-04 | 2005-06-16 | Carter Melvin K. | Chemical mechanical polishing slurries and cleaners containing salicylic acid as a corrosion inhibitor |
| JP2006100538A (ja) * | 2004-09-29 | 2006-04-13 | Fuji Photo Film Co Ltd | 研磨用組成物及びそれを用いた研磨方法 |
| JP2006179845A (ja) * | 2004-11-26 | 2006-07-06 | Fuji Photo Film Co Ltd | 金属用研磨液及び研磨方法 |
| US7678702B2 (en) * | 2005-08-31 | 2010-03-16 | Air Products And Chemicals, Inc. | CMP composition of boron surface-modified abrasive and nitro-substituted sulfonic acid and method of use |
| JP2007103463A (ja) * | 2005-09-30 | 2007-04-19 | Sumitomo Electric Ind Ltd | ポリシングスラリー、ＧａｘＩｎ１−ｘＡｓｙＰ１−ｙ結晶の表面処理方法およびＧａｘＩｎ１−ｘＡｓｙＰ１−ｙ結晶基板 |
| JP2007194593A (ja) * | 2005-12-20 | 2007-08-02 | Fujifilm Corp | 金属用研磨液及びそれを用いた研磨方法 |
| WO2007102138A2 (en) * | 2007-01-02 | 2007-09-13 | Freescale Semiconductor, Inc. | Barrier slurry compositions and barrier cmp methods |
| JP2007227670A (ja) * | 2006-02-23 | 2007-09-06 | Fujifilm Corp | 化学的機械的研磨方法 |
| US20080148649A1 (en) * | 2006-12-21 | 2008-06-26 | Zhendong Liu | Ruthenium-barrier polishing slurry |
| CN101016438A (zh) * | 2007-02-09 | 2007-08-15 | 孙韬 | 碱性计算机硬盘抛光液及其生产方法 |
| JP2008288398A (ja) * | 2007-05-18 | 2008-11-27 | Nippon Chem Ind Co Ltd | 半導体ウェハーの研磨用組成物、その製造方法、及び研磨加工方法 |
| US20090032765A1 (en) | 2007-08-03 | 2009-02-05 | Jinru Bian | Selective barrier polishing slurry |
| WO2009056491A1 (en) * | 2007-10-29 | 2009-05-07 | Basf Se | Cmp slurry composition and process for planarizing copper containing surfaces provided with a diffusion barrier layer |
| JP5314329B2 (ja) | 2008-06-12 | 2013-10-16 | 富士フイルム株式会社 | 研磨液 |
| MY156687A (en) * | 2009-06-22 | 2016-03-15 | Cabot Microelectronics Corp | Cmp compositions and method for suppressing polysilicon removal rates |
| JP2011171689A (ja) * | 2009-07-07 | 2011-09-01 | Kao Corp | シリコンウエハ用研磨液組成物 |
| JP6005516B2 (ja) * | 2009-11-13 | 2016-10-12 | ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ | 無機粒子及びポリマー粒子を含む化学的機械研磨（ｃｍｐ）組成物 |
| US8273142B2 (en) * | 2010-09-02 | 2012-09-25 | Cabot Microelectronics Corporation | Silicon polishing compositions with high rate and low defectivity |
-
2012
- 2012-07-06 EP EP12175333.9A patent/EP2682441A1/en not_active Withdrawn
-
2013
- 2013-06-27 MY MYPI2014003626A patent/MY170292A/en unknown
- 2013-06-27 JP JP2015519449A patent/JP6185578B2/ja active Active
- 2013-06-27 EP EP13812480.5A patent/EP2870599B1/en active Active
- 2013-06-27 WO PCT/IB2013/055273 patent/WO2014006546A2/en not_active Ceased
- 2013-06-27 CN CN201380036022.7A patent/CN104412316B/zh active Active
- 2013-06-27 KR KR1020157003200A patent/KR102147073B1/ko active Active
- 2013-06-27 SG SG11201408785VA patent/SG11201408785VA/en unknown
- 2013-06-27 RU RU2015103812A patent/RU2636511C2/ru not_active IP Right Cessation
- 2013-07-05 TW TW102124293A patent/TWI601794B/zh active
-
2014
- 2014-12-11 IL IL236194A patent/IL236194B/en active IP Right Grant
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