SG11201408785VA - Chemical mechanical polishing composition comprising non-ionic surfactant and aromatic compound comprising at least one acid group - Google Patents
Chemical mechanical polishing composition comprising non-ionic surfactant and aromatic compound comprising at least one acid groupInfo
- Publication number
- SG11201408785VA SG11201408785VA SG11201408785VA SG11201408785VA SG11201408785VA SG 11201408785V A SG11201408785V A SG 11201408785VA SG 11201408785V A SG11201408785V A SG 11201408785VA SG 11201408785V A SG11201408785V A SG 11201408785VA SG 11201408785V A SG11201408785V A SG 11201408785VA
- Authority
- SG
- Singapore
- Prior art keywords
- international
- basf
- acid group
- mechanical polishing
- chemical mechanical
- Prior art date
Links
- 239000000203 mixture Substances 0.000 title abstract 4
- 239000002253 acid Substances 0.000 title abstract 3
- 150000001491 aromatic compounds Chemical class 0.000 title abstract 3
- 239000002736 nonionic surfactant Substances 0.000 title abstract 3
- 238000005498 polishing Methods 0.000 title abstract 3
- 239000000126 substance Substances 0.000 title abstract 3
- 239000012736 aqueous medium Substances 0.000 abstract 1
- 239000003795 chemical substances by application Substances 0.000 abstract 1
- 239000002131 composite material Substances 0.000 abstract 1
- 239000010954 inorganic particle Substances 0.000 abstract 1
- 239000011146 organic particle Substances 0.000 abstract 1
- 230000008520 organization Effects 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
- 150000003839 salts Chemical class 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Composite Materials (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP12175333.9A EP2682441A1 (en) | 2012-07-06 | 2012-07-06 | A chemical mechanical polishing (CMP) composition comprising a non-ionic surfactant and an aromatic compound comprising at least one acid group |
| PCT/IB2013/055273 WO2014006546A2 (en) | 2012-07-06 | 2013-06-27 | A chemical mechanical polishing (cmp) composition comprising a non-ionic surfactant and an aromatic compound comprising at least one acid group |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201408785VA true SG11201408785VA (en) | 2015-01-29 |
Family
ID=46458354
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201408785VA SG11201408785VA (en) | 2012-07-06 | 2013-06-27 | Chemical mechanical polishing composition comprising non-ionic surfactant and aromatic compound comprising at least one acid group |
Country Status (10)
| Country | Link |
|---|---|
| EP (2) | EP2682441A1 (enExample) |
| JP (1) | JP6185578B2 (enExample) |
| KR (1) | KR102147073B1 (enExample) |
| CN (1) | CN104412316B (enExample) |
| IL (1) | IL236194B (enExample) |
| MY (1) | MY170292A (enExample) |
| RU (1) | RU2636511C2 (enExample) |
| SG (1) | SG11201408785VA (enExample) |
| TW (1) | TWI601794B (enExample) |
| WO (1) | WO2014006546A2 (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI775722B (zh) * | 2014-12-22 | 2022-09-01 | 德商巴斯夫歐洲公司 | 化學機械拋光（ｃｍｐ）組成物用於拋光含鈷及/或鈷合金之基材的用途 |
| WO2017223225A1 (en) * | 2016-06-22 | 2017-12-28 | Cabot Microelectronics Corporation | Polishing composition comprising an amine-containing surfactant |
| CN109251672B (zh) * | 2017-07-13 | 2022-02-18 | 安集微电子科技（上海）股份有限公司 | 一种化学机械抛光液 |
| US10170335B1 (en) | 2017-09-21 | 2019-01-01 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing method for cobalt |
| CN113122143B (zh) * | 2019-12-31 | 2024-03-08 | 安集微电子（上海）有限公司 | 一种化学机械抛光液及其在铜抛光中的应用 |
| CN113122144A (zh) * | 2019-12-31 | 2021-07-16 | 安集微电子（上海）有限公司 | 一种化学机械抛光液 |
| CN112801973B (zh) * | 2021-01-27 | 2022-06-14 | 山东大学 | 一种金刚石线锯表面磨粒分布均匀性评价方法 |
| JP2022131199A (ja) * | 2021-02-26 | 2022-09-07 | 株式会社フジミインコーポレーテッド | 研磨用組成物及び研磨方法 |
| KR20250066153A (ko) | 2023-11-06 | 2025-05-13 | 에스케이엔펄스 주식회사 | 반도체 공정용 연마 조성물 및 이를 이용한 기판의 제조방법 |
| KR20250066152A (ko) | 2023-11-06 | 2025-05-13 | 에스케이엔펄스 주식회사 | 반도체 공정용 연마 조성물 및 이를 이용한 기판의 제조방법 |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5738800A (en) * | 1996-09-27 | 1998-04-14 | Rodel, Inc. | Composition and method for polishing a composite of silica and silicon nitride |
| US6646348B1 (en) * | 2000-07-05 | 2003-11-11 | Cabot Microelectronics Corporation | Silane containing polishing composition for CMP |
| JP3563017B2 (ja) * | 2000-07-19 | 2004-09-08 | ロデール・ニッタ株式会社 | 研磨組成物、研磨組成物の製造方法及びポリシング方法 |
| US6936543B2 (en) * | 2002-06-07 | 2005-08-30 | Cabot Microelectronics Corporation | CMP method utilizing amphiphilic nonionic surfactants |
| US20040175942A1 (en) | 2003-01-03 | 2004-09-09 | Chang Song Y. | Composition and method used for chemical mechanical planarization of metals |
| US7514363B2 (en) * | 2003-10-23 | 2009-04-07 | Dupont Air Products Nanomaterials Llc | Chemical-mechanical planarization composition having benzenesulfonic acid and per-compound oxidizing agents, and associated method for use |
| US20050126588A1 (en) * | 2003-11-04 | 2005-06-16 | Carter Melvin K. | Chemical mechanical polishing slurries and cleaners containing salicylic acid as a corrosion inhibitor |
| JP2006100538A (ja) * | 2004-09-29 | 2006-04-13 | Fuji Photo Film Co Ltd | 研磨用組成物及びそれを用いた研磨方法 |
| JP2006179845A (ja) * | 2004-11-26 | 2006-07-06 | Fuji Photo Film Co Ltd | 金属用研磨液及び研磨方法 |
| US7678702B2 (en) * | 2005-08-31 | 2010-03-16 | Air Products And Chemicals, Inc. | CMP composition of boron surface-modified abrasive and nitro-substituted sulfonic acid and method of use |
| JP2007103463A (ja) * | 2005-09-30 | 2007-04-19 | Sumitomo Electric Ind Ltd | ポリシングスラリー、ＧａｘＩｎ１−ｘＡｓｙＰ１−ｙ結晶の表面処理方法およびＧａｘＩｎ１−ｘＡｓｙＰ１−ｙ結晶基板 |
| JP2007194593A (ja) * | 2005-12-20 | 2007-08-02 | Fujifilm Corp | 金属用研磨液及びそれを用いた研磨方法 |
| US20090209103A1 (en) * | 2006-02-03 | 2009-08-20 | Freescale Semiconductor, Inc. | Barrier slurry compositions and barrier cmp methods |
| JP2007227670A (ja) * | 2006-02-23 | 2007-09-06 | Fujifilm Corp | 化学的機械的研磨方法 |
| US20080148649A1 (en) * | 2006-12-21 | 2008-06-26 | Zhendong Liu | Ruthenium-barrier polishing slurry |
| CN101016438A (zh) * | 2007-02-09 | 2007-08-15 | 孙韬 | 碱性计算机硬盘抛光液及其生产方法 |
| JP2008288398A (ja) * | 2007-05-18 | 2008-11-27 | Nippon Chem Ind Co Ltd | 半導体ウェハーの研磨用組成物、その製造方法、及び研磨加工方法 |
| US20090032765A1 (en) * | 2007-08-03 | 2009-02-05 | Jinru Bian | Selective barrier polishing slurry |
| WO2009056491A1 (en) * | 2007-10-29 | 2009-05-07 | Basf Se | Cmp slurry composition and process for planarizing copper containing surfaces provided with a diffusion barrier layer |
| JP5314329B2 (ja) | 2008-06-12 | 2013-10-16 | 富士フイルム株式会社 | 研磨液 |
| JP5827221B2 (ja) * | 2009-06-22 | 2015-12-02 | キャボット マイクロエレクトロニクス コーポレイション | ポリシリコン除去速度の抑制のためのｃｍｐ組成物および方法 |
| JP2011171689A (ja) * | 2009-07-07 | 2011-09-01 | Kao Corp | シリコンウエハ用研磨液組成物 |
| RU2579597C2 (ru) * | 2009-11-13 | 2016-04-10 | Басф Се | Композиция для химико-механической полировки (хмп ), содержащая неорганические частицы и полимерные частицы |
| US8273142B2 (en) * | 2010-09-02 | 2012-09-25 | Cabot Microelectronics Corporation | Silicon polishing compositions with high rate and low defectivity |
-
2012
- 2012-07-06 EP EP12175333.9A patent/EP2682441A1/en not_active Withdrawn
-
2013
- 2013-06-27 WO PCT/IB2013/055273 patent/WO2014006546A2/en not_active Ceased
- 2013-06-27 RU RU2015103812A patent/RU2636511C2/ru not_active IP Right Cessation
- 2013-06-27 KR KR1020157003200A patent/KR102147073B1/ko active Active
- 2013-06-27 EP EP13812480.5A patent/EP2870599B1/en active Active
- 2013-06-27 MY MYPI2014003626A patent/MY170292A/en unknown
- 2013-06-27 JP JP2015519449A patent/JP6185578B2/ja active Active
- 2013-06-27 CN CN201380036022.7A patent/CN104412316B/zh active Active
- 2013-06-27 SG SG11201408785VA patent/SG11201408785VA/en unknown
- 2013-07-05 TW TW102124293A patent/TWI601794B/zh active
-
2014
- 2014-12-11 IL IL236194A patent/IL236194B/en active IP Right Grant
Also Published As
| Publication number | Publication date |
|---|---|
| EP2870599A2 (en) | 2015-05-13 |
| EP2870599A4 (en) | 2016-03-30 |
| RU2015103812A (ru) | 2016-08-27 |
| IL236194A0 (en) | 2015-01-29 |
| JP6185578B2 (ja) | 2017-08-23 |
| TWI601794B (zh) | 2017-10-11 |
| TW201406889A (zh) | 2014-02-16 |
| MY170292A (en) | 2019-07-17 |
| KR20150036422A (ko) | 2015-04-07 |
| IL236194B (en) | 2020-07-30 |
| WO2014006546A3 (en) | 2014-02-27 |
| CN104412316B (zh) | 2018-04-20 |
| WO2014006546A2 (en) | 2014-01-09 |
| CN104412316A (zh) | 2015-03-11 |
| KR102147073B1 (ko) | 2020-08-25 |
| RU2636511C2 (ru) | 2017-11-23 |
| EP2870599B1 (en) | 2018-10-17 |
| JP2015530420A (ja) | 2015-10-15 |
| EP2682441A1 (en) | 2014-01-08 |
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