TWI601794B - 包含非離子性界面活性劑及含有至少一個酸基團之芳香化合物之化學機械拋光（ｃｍｐ）組合物 - Google Patents
包含非離子性界面活性劑及含有至少一個酸基團之芳香化合物之化學機械拋光（ｃｍｐ）組合物 Download PDFInfo
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- TWI601794B TWI601794B TW102124293A TW102124293A TWI601794B TW I601794 B TWI601794 B TW I601794B TW 102124293 A TW102124293 A TW 102124293A TW 102124293 A TW102124293 A TW 102124293A TW I601794 B TWI601794 B TW I601794B
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- 239000006227 byproduct Substances 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 description 1
- 150000007942 carboxylates Chemical class 0.000 description 1
- 125000002843 carboxylic acid group Chemical group 0.000 description 1
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- WXANAQMHYPHTGY-UHFFFAOYSA-N cerium;ethyne Chemical compound [Ce].[C-]#[C] WXANAQMHYPHTGY-UHFFFAOYSA-N 0.000 description 1
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- CHTHALBTIRVDBM-UHFFFAOYSA-N dehydromucic acid Natural products OC(=O)C1=CC=C(C(O)=O)O1 CHTHALBTIRVDBM-UHFFFAOYSA-N 0.000 description 1
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- 239000012895 dilution Substances 0.000 description 1
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Composite Materials (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP12175333.9A EP2682441A1 (en) | 2012-07-06 | 2012-07-06 | A chemical mechanical polishing (CMP) composition comprising a non-ionic surfactant and an aromatic compound comprising at least one acid group |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201406889A TW201406889A (zh) | 2014-02-16 |
| TWI601794B true TWI601794B (zh) | 2017-10-11 |
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ID=46458354
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102124293A TWI601794B (zh) | 2012-07-06 | 2013-07-05 | 包含非離子性界面活性劑及含有至少一個酸基團之芳香化合物之化學機械拋光（ｃｍｐ）組合物 |
Country Status (10)
| Country | Link |
|---|---|
| EP (2) | EP2682441A1 (enExample) |
| JP (1) | JP6185578B2 (enExample) |
| KR (1) | KR102147073B1 (enExample) |
| CN (1) | CN104412316B (enExample) |
| IL (1) | IL236194B (enExample) |
| MY (1) | MY170292A (enExample) |
| RU (1) | RU2636511C2 (enExample) |
| SG (1) | SG11201408785VA (enExample) |
| TW (1) | TWI601794B (enExample) |
| WO (1) | WO2014006546A2 (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI775722B (zh) * | 2014-12-22 | 2022-09-01 | 德商巴斯夫歐洲公司 | 化學機械拋光（ｃｍｐ）組成物用於拋光含鈷及/或鈷合金之基材的用途 |
| CN109415597B (zh) * | 2016-06-22 | 2021-08-17 | 嘉柏微电子材料股份公司 | 包含含胺的表面活性剂的抛光组合物 |
| CN109251672B (zh) * | 2017-07-13 | 2022-02-18 | 安集微电子科技（上海）股份有限公司 | 一种化学机械抛光液 |
| US10170335B1 (en) | 2017-09-21 | 2019-01-01 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing method for cobalt |
| CN113122143B (zh) * | 2019-12-31 | 2024-03-08 | 安集微电子（上海）有限公司 | 一种化学机械抛光液及其在铜抛光中的应用 |
| CN113122144A (zh) * | 2019-12-31 | 2021-07-16 | 安集微电子（上海）有限公司 | 一种化学机械抛光液 |
| CN112801973B (zh) * | 2021-01-27 | 2022-06-14 | 山东大学 | 一种金刚石线锯表面磨粒分布均匀性评价方法 |
| JP2022131199A (ja) * | 2021-02-26 | 2022-09-07 | 株式会社フジミインコーポレーテッド | 研磨用組成物及び研磨方法 |
| KR20250066152A (ko) | 2023-11-06 | 2025-05-13 | 에스케이엔펄스 주식회사 | 반도체 공정용 연마 조성물 및 이를 이용한 기판의 제조방법 |
| KR20250066153A (ko) | 2023-11-06 | 2025-05-13 | 에스케이엔펄스 주식회사 | 반도체 공정용 연마 조성물 및 이를 이용한 기판의 제조방법 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6042741A (en) * | 1996-09-27 | 2000-03-28 | Rodel Holdings, Inc. | Composition for polishing a composite of silica and silicon nitride |
| US20020028632A1 (en) * | 2000-07-19 | 2002-03-07 | Hajime Shimamoto | Polishing composition and manufacturing and polishing methods |
| TW200907038A (en) * | 2007-08-03 | 2009-02-16 | Rohm & Haas Elect Mat | Selective barrier polishing slurry |
| TW201122068A (en) * | 2009-11-13 | 2011-07-01 | Basf Se | A chemical mechanical polishing (CMP) composition comprising inorganic particles and polymer particles |
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| US20050126588A1 (en) * | 2003-11-04 | 2005-06-16 | Carter Melvin K. | Chemical mechanical polishing slurries and cleaners containing salicylic acid as a corrosion inhibitor |
| JP2006100538A (ja) * | 2004-09-29 | 2006-04-13 | Fuji Photo Film Co Ltd | 研磨用組成物及びそれを用いた研磨方法 |
| JP2006179845A (ja) * | 2004-11-26 | 2006-07-06 | Fuji Photo Film Co Ltd | 金属用研磨液及び研磨方法 |
| US7678702B2 (en) * | 2005-08-31 | 2010-03-16 | Air Products And Chemicals, Inc. | CMP composition of boron surface-modified abrasive and nitro-substituted sulfonic acid and method of use |
| JP2007103463A (ja) * | 2005-09-30 | 2007-04-19 | Sumitomo Electric Ind Ltd | ポリシングスラリー、ＧａｘＩｎ１−ｘＡｓｙＰ１−ｙ結晶の表面処理方法およびＧａｘＩｎ１−ｘＡｓｙＰ１−ｙ結晶基板 |
| JP2007194593A (ja) * | 2005-12-20 | 2007-08-02 | Fujifilm Corp | 金属用研磨液及びそれを用いた研磨方法 |
| WO2007102138A2 (en) * | 2007-01-02 | 2007-09-13 | Freescale Semiconductor, Inc. | Barrier slurry compositions and barrier cmp methods |
| JP2007227670A (ja) * | 2006-02-23 | 2007-09-06 | Fujifilm Corp | 化学的機械的研磨方法 |
| US20080148649A1 (en) * | 2006-12-21 | 2008-06-26 | Zhendong Liu | Ruthenium-barrier polishing slurry |
| CN101016438A (zh) * | 2007-02-09 | 2007-08-15 | 孙韬 | 碱性计算机硬盘抛光液及其生产方法 |
| JP2008288398A (ja) * | 2007-05-18 | 2008-11-27 | Nippon Chem Ind Co Ltd | 半導体ウェハーの研磨用組成物、その製造方法、及び研磨加工方法 |
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- 2013-06-27 EP EP13812480.5A patent/EP2870599B1/en active Active
- 2013-06-27 WO PCT/IB2013/055273 patent/WO2014006546A2/en not_active Ceased
- 2013-06-27 CN CN201380036022.7A patent/CN104412316B/zh active Active
- 2013-06-27 KR KR1020157003200A patent/KR102147073B1/ko active Active
- 2013-06-27 SG SG11201408785VA patent/SG11201408785VA/en unknown
- 2013-06-27 RU RU2015103812A patent/RU2636511C2/ru not_active IP Right Cessation
- 2013-07-05 TW TW102124293A patent/TWI601794B/zh active
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| US6042741A (en) * | 1996-09-27 | 2000-03-28 | Rodel Holdings, Inc. | Composition for polishing a composite of silica and silicon nitride |
| US20020028632A1 (en) * | 2000-07-19 | 2002-03-07 | Hajime Shimamoto | Polishing composition and manufacturing and polishing methods |
| TW200907038A (en) * | 2007-08-03 | 2009-02-16 | Rohm & Haas Elect Mat | Selective barrier polishing slurry |
| TW201122068A (en) * | 2009-11-13 | 2011-07-01 | Basf Se | A chemical mechanical polishing (CMP) composition comprising inorganic particles and polymer particles |
Also Published As
| Publication number | Publication date |
|---|---|
| SG11201408785VA (en) | 2015-01-29 |
| EP2870599A2 (en) | 2015-05-13 |
| WO2014006546A2 (en) | 2014-01-09 |
| KR20150036422A (ko) | 2015-04-07 |
| TW201406889A (zh) | 2014-02-16 |
| RU2636511C2 (ru) | 2017-11-23 |
| IL236194A0 (en) | 2015-01-29 |
| EP2870599A4 (en) | 2016-03-30 |
| WO2014006546A3 (en) | 2014-02-27 |
| CN104412316B (zh) | 2018-04-20 |
| JP2015530420A (ja) | 2015-10-15 |
| IL236194B (en) | 2020-07-30 |
| EP2682441A1 (en) | 2014-01-08 |
| JP6185578B2 (ja) | 2017-08-23 |
| CN104412316A (zh) | 2015-03-11 |
| MY170292A (en) | 2019-07-17 |
| EP2870599B1 (en) | 2018-10-17 |
| KR102147073B1 (ko) | 2020-08-25 |
| RU2015103812A (ru) | 2016-08-27 |
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