KR102147073B1 - 비-이온성 계면활성제 및 하나 이상의 산 기를 포함하는 방향족 화합물을 포함하는 화학 기계 연마 조성물 - Google Patents

비-이온성 계면활성제 및 하나 이상의 산 기를 포함하는 방향족 화합물을 포함하는 화학 기계 연마 조성물 Download PDF

Info

Publication number
KR102147073B1
KR102147073B1 KR1020157003200A KR20157003200A KR102147073B1 KR 102147073 B1 KR102147073 B1 KR 102147073B1 KR 1020157003200 A KR1020157003200 A KR 1020157003200A KR 20157003200 A KR20157003200 A KR 20157003200A KR 102147073 B1 KR102147073 B1 KR 102147073B1
Authority
KR
South Korea
Prior art keywords
weight
acid
group
cmp composition
cmp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020157003200A
Other languages
English (en)
Korean (ko)
Other versions
KR20150036422A (ko
Inventor
로베르트 라이하르트
유주오 리
미하엘 라우터
Original Assignee
바스프 에스이
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 바스프 에스이 filed Critical 바스프 에스이
Publication of KR20150036422A publication Critical patent/KR20150036422A/ko
Application granted granted Critical
Publication of KR102147073B1 publication Critical patent/KR102147073B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Composite Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020157003200A 2012-07-06 2013-06-27 비-이온성 계면활성제 및 하나 이상의 산 기를 포함하는 방향족 화합물을 포함하는 화학 기계 연마 조성물 Active KR102147073B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP12175333.9A EP2682441A1 (en) 2012-07-06 2012-07-06 A chemical mechanical polishing (CMP) composition comprising a non-ionic surfactant and an aromatic compound comprising at least one acid group
EP12175333.9 2012-07-06
PCT/IB2013/055273 WO2014006546A2 (en) 2012-07-06 2013-06-27 A chemical mechanical polishing (cmp) composition comprising a non-ionic surfactant and an aromatic compound comprising at least one acid group

Publications (2)

Publication Number Publication Date
KR20150036422A KR20150036422A (ko) 2015-04-07
KR102147073B1 true KR102147073B1 (ko) 2020-08-25

Family

ID=46458354

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020157003200A Active KR102147073B1 (ko) 2012-07-06 2013-06-27 비-이온성 계면활성제 및 하나 이상의 산 기를 포함하는 방향족 화합물을 포함하는 화학 기계 연마 조성물

Country Status (10)

Country Link
EP (2) EP2682441A1 (enExample)
JP (1) JP6185578B2 (enExample)
KR (1) KR102147073B1 (enExample)
CN (1) CN104412316B (enExample)
IL (1) IL236194B (enExample)
MY (1) MY170292A (enExample)
RU (1) RU2636511C2 (enExample)
SG (1) SG11201408785VA (enExample)
TW (1) TWI601794B (enExample)
WO (1) WO2014006546A2 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI775722B (zh) * 2014-12-22 2022-09-01 德商巴斯夫歐洲公司 化學機械拋光（ｃｍｐ）組成物用於拋光含鈷及/或鈷合金之基材的用途
CN109415597B (zh) * 2016-06-22 2021-08-17 嘉柏微电子材料股份公司 包含含胺的表面活性剂的抛光组合物
CN109251672B (zh) * 2017-07-13 2022-02-18 安集微电子科技（上海）股份有限公司 一种化学机械抛光液
US10170335B1 (en) 2017-09-21 2019-01-01 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method for cobalt
CN113122143B (zh) * 2019-12-31 2024-03-08 安集微电子（上海）有限公司 一种化学机械抛光液及其在铜抛光中的应用
CN113122144A (zh) * 2019-12-31 2021-07-16 安集微电子（上海）有限公司 一种化学机械抛光液
CN112801973B (zh) * 2021-01-27 2022-06-14 山东大学 一种金刚石线锯表面磨粒分布均匀性评价方法
JP2022131199A (ja) * 2021-02-26 2022-09-07 株式会社フジミインコーポレーテッド 研磨用組成物及び研磨方法
KR20250066152A (ko) 2023-11-06 2025-05-13 에스케이엔펄스 주식회사 반도체 공정용 연마 조성물 및 이를 이용한 기판의 제조방법
KR20250066153A (ko) 2023-11-06 2025-05-13 에스케이엔펄스 주식회사 반도체 공정용 연마 조성물 및 이를 이용한 기판의 제조방법

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5738800A (en) * 1996-09-27 1998-04-14 Rodel, Inc. Composition and method for polishing a composite of silica and silicon nitride
US6646348B1 (en) * 2000-07-05 2003-11-11 Cabot Microelectronics Corporation Silane containing polishing composition for CMP
JP3563017B2 (ja) * 2000-07-19 2004-09-08 ロデール・ニッタ株式会社 研磨組成物、研磨組成物の製造方法及びポリシング方法
US6936543B2 (en) * 2002-06-07 2005-08-30 Cabot Microelectronics Corporation CMP method utilizing amphiphilic nonionic surfactants
US20040175942A1 (en) 2003-01-03 2004-09-09 Chang Song Y. Composition and method used for chemical mechanical planarization of metals
US7514363B2 (en) * 2003-10-23 2009-04-07 Dupont Air Products Nanomaterials Llc Chemical-mechanical planarization composition having benzenesulfonic acid and per-compound oxidizing agents, and associated method for use
US20050126588A1 (en) * 2003-11-04 2005-06-16 Carter Melvin K. Chemical mechanical polishing slurries and cleaners containing salicylic acid as a corrosion inhibitor
JP2006100538A (ja) * 2004-09-29 2006-04-13 Fuji Photo Film Co Ltd 研磨用組成物及びそれを用いた研磨方法
JP2006179845A (ja) * 2004-11-26 2006-07-06 Fuji Photo Film Co Ltd 金属用研磨液及び研磨方法
US7678702B2 (en) * 2005-08-31 2010-03-16 Air Products And Chemicals, Inc. CMP composition of boron surface-modified abrasive and nitro-substituted sulfonic acid and method of use
JP2007103463A (ja) * 2005-09-30 2007-04-19 Sumitomo Electric Ind Ltd ポリシングスラリー、ＧａｘＩｎ１−ｘＡｓｙＰ１−ｙ結晶の表面処理方法およびＧａｘＩｎ１−ｘＡｓｙＰ１−ｙ結晶基板
JP2007194593A (ja) * 2005-12-20 2007-08-02 Fujifilm Corp 金属用研磨液及びそれを用いた研磨方法
WO2007102138A2 (en) * 2007-01-02 2007-09-13 Freescale Semiconductor, Inc. Barrier slurry compositions and barrier cmp methods
JP2007227670A (ja) * 2006-02-23 2007-09-06 Fujifilm Corp 化学的機械的研磨方法
US20080148649A1 (en) * 2006-12-21 2008-06-26 Zhendong Liu Ruthenium-barrier polishing slurry
CN101016438A (zh) * 2007-02-09 2007-08-15 孙韬 碱性计算机硬盘抛光液及其生产方法
JP2008288398A (ja) * 2007-05-18 2008-11-27 Nippon Chem Ind Co Ltd 半導体ウェハーの研磨用組成物、その製造方法、及び研磨加工方法
US20090032765A1 (en) 2007-08-03 2009-02-05 Jinru Bian Selective barrier polishing slurry
WO2009056491A1 (en) * 2007-10-29 2009-05-07 Basf Se Cmp slurry composition and process for planarizing copper containing surfaces provided with a diffusion barrier layer
JP5314329B2 (ja) 2008-06-12 2013-10-16 富士フイルム株式会社 研磨液
MY156687A (en) * 2009-06-22 2016-03-15 Cabot Microelectronics Corp Cmp compositions and method for suppressing polysilicon removal rates
JP2011171689A (ja) * 2009-07-07 2011-09-01 Kao Corp シリコンウエハ用研磨液組成物
JP6005516B2 (ja) * 2009-11-13 2016-10-12 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ 無機粒子及びポリマー粒子を含む化学的機械研磨（ｃｍｐ）組成物
US8273142B2 (en) * 2010-09-02 2012-09-25 Cabot Microelectronics Corporation Silicon polishing compositions with high rate and low defectivity

Also Published As

Publication number Publication date
SG11201408785VA (en) 2015-01-29
EP2870599A2 (en) 2015-05-13
WO2014006546A2 (en) 2014-01-09
KR20150036422A (ko) 2015-04-07
TW201406889A (zh) 2014-02-16
RU2636511C2 (ru) 2017-11-23
TWI601794B (zh) 2017-10-11
IL236194A0 (en) 2015-01-29
EP2870599A4 (en) 2016-03-30
WO2014006546A3 (en) 2014-02-27
CN104412316B (zh) 2018-04-20
JP2015530420A (ja) 2015-10-15
IL236194B (en) 2020-07-30
EP2682441A1 (en) 2014-01-08
JP6185578B2 (ja) 2017-08-23
CN104412316A (zh) 2015-03-11
MY170292A (en) 2019-07-17
EP2870599B1 (en) 2018-10-17
RU2015103812A (ru) 2016-08-27

Similar Documents

Publication Publication Date Title
KR102147073B1 (ko) 비-이온성 계면활성제 및 하나 이상의 산 기를 포함하는 방향족 화합물을 포함하는 화학 기계 연마 조성물
US8980750B2 (en) Chemical mechanical polishing (CMP) composition comprising a non-ionic surfactant and a carbonate salt
US11168239B2 (en) Chemical-mechanical polishing composition comprising benzotriazole derivatives as corrosion inhibitors
US20140011362A1 (en) Chemical mechanical polishing (cmp) composition comprising a non-ionic surfactant and an aromatic compound comprising at least one acid group
CN105229110B (zh) 具有高的移除速率和低的缺陷率的对于氧化物和氮化物有选择性的化学机械抛光组合物
RU2643541C2 (ru) Композиция для химико-механической полировки (смр), содержащая неионное поверхностно-активное вещество и карбонатную соль
EP2688966B1 (en) A chemical mechanical polishing (cmp) composition comprising two types of corrosion inhibitors
US9416298B2 (en) Process for the manufacture of semiconductor devices comprising the chemical mechanical polishing (CMP) of III-V material in the presence of a CMP composition comprising a specific non-ionic surfactant
EP3400266B1 (en) Method of polishing a low-k substrate
TWI892972B (zh) 化學機械拋光含銅和釕的基材
US20160013066A1 (en) Chemical mechanical polishing (cmp) composition
US8927429B2 (en) Chemical mechanical polishing (CMP) composition comprising a specific heteropolyacid
CN113195657A (zh) 含有铜和钌的基材的化学机械抛光
TWI548727B (zh) 包含兩種抗蝕劑的化學機械研磨（ｃｍｐ）組成物
EP2666833A1 (en) A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing (cmp) of iii-v material in the presence of a cmp composition comprising a specific non-ionic surfactant

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6