RU2636511C2 - Композиция для химико-механической полировки (смр), содержащая неионное поверхностно-активное вещество и ароматическое соединение, содержащее по меньшей мере одну кислотную группу - Google Patents

Композиция для химико-механической полировки (смр), содержащая неионное поверхностно-активное вещество и ароматическое соединение, содержащее по меньшей мере одну кислотную группу Download PDF

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RU2636511C2
RU2636511C2 RU2015103812A RU2015103812A RU2636511C2 RU 2636511 C2 RU2636511 C2 RU 2636511C2 RU 2015103812 A RU2015103812 A RU 2015103812A RU 2015103812 A RU2015103812 A RU 2015103812A RU 2636511 C2 RU2636511 C2 RU 2636511C2
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composition
group
acid
particles
cmp
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RU2015103812A
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Russian (ru)
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RU2015103812A (ru
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Роберт РАЙХАРДТ
Южуо ЛИ ()
Михаэль ЛАУТЕР
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Басф Се
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Composite Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
RU2015103812A 2012-07-06 2013-06-27 Композиция для химико-механической полировки (смр), содержащая неионное поверхностно-активное вещество и ароматическое соединение, содержащее по меньшей мере одну кислотную группу RU2636511C2 (ru)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP12175333.9A EP2682441A1 (en) 2012-07-06 2012-07-06 A chemical mechanical polishing (CMP) composition comprising a non-ionic surfactant and an aromatic compound comprising at least one acid group
EP12175333.9 2012-07-06
PCT/IB2013/055273 WO2014006546A2 (en) 2012-07-06 2013-06-27 A chemical mechanical polishing (cmp) composition comprising a non-ionic surfactant and an aromatic compound comprising at least one acid group

Publications (2)

Publication Number Publication Date
RU2015103812A RU2015103812A (ru) 2016-08-27
RU2636511C2 true RU2636511C2 (ru) 2017-11-23

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Family Applications (1)

Application Number Title Priority Date Filing Date
RU2015103812A RU2636511C2 (ru) 2012-07-06 2013-06-27 Композиция для химико-механической полировки (смр), содержащая неионное поверхностно-активное вещество и ароматическое соединение, содержащее по меньшей мере одну кислотную группу

Country Status (10)

Country Link
EP (2) EP2682441A1 (enExample)
JP (1) JP6185578B2 (enExample)
KR (1) KR102147073B1 (enExample)
CN (1) CN104412316B (enExample)
IL (1) IL236194B (enExample)
MY (1) MY170292A (enExample)
RU (1) RU2636511C2 (enExample)
SG (1) SG11201408785VA (enExample)
TW (1) TWI601794B (enExample)
WO (1) WO2014006546A2 (enExample)

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CN109415597B (zh) * 2016-06-22 2021-08-17 嘉柏微电子材料股份公司 包含含胺的表面活性剂的抛光组合物
CN109251672B (zh) * 2017-07-13 2022-02-18 安集微电子科技（上海）股份有限公司 一种化学机械抛光液
US10170335B1 (en) 2017-09-21 2019-01-01 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method for cobalt
CN113122143B (zh) * 2019-12-31 2024-03-08 安集微电子（上海）有限公司 一种化学机械抛光液及其在铜抛光中的应用
CN113122144A (zh) * 2019-12-31 2021-07-16 安集微电子（上海）有限公司 一种化学机械抛光液
CN112801973B (zh) * 2021-01-27 2022-06-14 山东大学 一种金刚石线锯表面磨粒分布均匀性评价方法
JP2022131199A (ja) * 2021-02-26 2022-09-07 株式会社フジミインコーポレーテッド 研磨用組成物及び研磨方法
KR20250066152A (ko) 2023-11-06 2025-05-13 에스케이엔펄스 주식회사 반도체 공정용 연마 조성물 및 이를 이용한 기판의 제조방법
KR20250066153A (ko) 2023-11-06 2025-05-13 에스케이엔펄스 주식회사 반도체 공정용 연마 조성물 및 이를 이용한 기판의 제조방법

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WO2012030752A2 (en) * 2010-09-02 2012-03-08 Cabot Microelectronics Corporation Silicon polishing compositions with high rate and low defectivity
EP2444996A1 (en) * 2009-07-07 2012-04-25 Kao Corporation Polishing liquid composition for silicon wafers

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WO2004033574A1 (en) * 2002-10-11 2004-04-22 Cabot Microelectronics Corporation Cmp method utilizing amphiphilic non-ionic surfactants
RU2006134685A (ru) * 2005-09-30 2008-04-10 Сумитомо Электрик Индастриз Полирующая суспензия, способ обработки поверхности кристаллов gaxin1-xasyp1-y и кристаллические подложки из gaxin1-xasyp1-y
US20090032765A1 (en) * 2007-08-03 2009-02-05 Jinru Bian Selective barrier polishing slurry
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Also Published As

Publication number Publication date
SG11201408785VA (en) 2015-01-29
EP2870599A2 (en) 2015-05-13
WO2014006546A2 (en) 2014-01-09
KR20150036422A (ko) 2015-04-07
TW201406889A (zh) 2014-02-16
TWI601794B (zh) 2017-10-11
IL236194A0 (en) 2015-01-29
EP2870599A4 (en) 2016-03-30
WO2014006546A3 (en) 2014-02-27
CN104412316B (zh) 2018-04-20
JP2015530420A (ja) 2015-10-15
IL236194B (en) 2020-07-30
EP2682441A1 (en) 2014-01-08
JP6185578B2 (ja) 2017-08-23
CN104412316A (zh) 2015-03-11
MY170292A (en) 2019-07-17
EP2870599B1 (en) 2018-10-17
KR102147073B1 (ko) 2020-08-25
RU2015103812A (ru) 2016-08-27

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Effective date: 20190628