JP2015529190A5 - - Google Patents
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- Publication number
- JP2015529190A5 JP2015529190A5 JP2015533041A JP2015533041A JP2015529190A5 JP 2015529190 A5 JP2015529190 A5 JP 2015529190A5 JP 2015533041 A JP2015533041 A JP 2015533041A JP 2015533041 A JP2015533041 A JP 2015533041A JP 2015529190 A5 JP2015529190 A5 JP 2015529190A5
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- group iii
- nitride
- seed
- iii nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 235000012431 wafers Nutrition 0.000 claims description 262
- 239000013078 crystal Substances 0.000 claims description 134
- 150000004767 nitrides Chemical class 0.000 claims description 122
- 238000000034 method Methods 0.000 claims description 102
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 40
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 38
- 229910002601 GaN Inorganic materials 0.000 claims description 37
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 24
- 229910052757 nitrogen Inorganic materials 0.000 claims description 19
- 230000001788 irregular Effects 0.000 claims description 14
- 229910021529 ammonia Inorganic materials 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 239000010410 layer Substances 0.000 description 130
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 19
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 13
- 229910052733 gallium Inorganic materials 0.000 description 13
- 239000011295 pitch Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000001902 propagating effect Effects 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 235000015097 nutrients Nutrition 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 241001101998 Galium Species 0.000 description 1
- JCXJVPUVTGWSNB-UHFFFAOYSA-N Nitrogen dioxide Chemical class O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000005136 cathodoluminescence Methods 0.000 description 1
- 239000013043 chemical agent Substances 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 238000001534 heteroepitaxy Methods 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 239000000080 wetting agent Substances 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261705540P | 2012-09-25 | 2012-09-25 | |
| US61/705,540 | 2012-09-25 | ||
| PCT/US2013/032103 WO2014051692A1 (en) | 2012-09-25 | 2013-03-15 | Method of growing group iii nitride crystals |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017023920A Division JP6333427B2 (ja) | 2012-09-25 | 2017-02-13 | Ｉｉｉ族窒化物結晶を成長させる方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015529190A JP2015529190A (ja) | 2015-10-05 |
| JP2015529190A5 true JP2015529190A5 (enExample) | 2017-03-23 |
| JP6169704B2 JP6169704B2 (ja) | 2017-07-26 |
Family
ID=48050287
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015533041A Active JP6169704B2 (ja) | 2012-09-25 | 2013-03-15 | Ｉｉｉ族窒化物結晶を成長させる方法 |
| JP2017023920A Active JP6333427B2 (ja) | 2012-09-25 | 2017-02-13 | Ｉｉｉ族窒化物結晶を成長させる方法 |
| JP2018019044A Withdrawn JP2018065751A (ja) | 2012-09-25 | 2018-02-06 | Ｉｉｉ族窒化物結晶を成長させる方法 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017023920A Active JP6333427B2 (ja) | 2012-09-25 | 2017-02-13 | Ｉｉｉ族窒化物結晶を成長させる方法 |
| JP2018019044A Withdrawn JP2018065751A (ja) | 2012-09-25 | 2018-02-06 | Ｉｉｉ族窒化物結晶を成長させる方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US9202872B2 (enExample) |
| EP (1) | EP2900851B1 (enExample) |
| JP (3) | JP6169704B2 (enExample) |
| KR (1) | KR102096421B1 (enExample) |
| TW (1) | TWI602959B (enExample) |
| WO (1) | WO2014051692A1 (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9202872B2 (en) | 2006-04-07 | 2015-12-01 | Sixpoint Materials, Inc. | Method of growing group III nitride crystals |
| US9518340B2 (en) | 2006-04-07 | 2016-12-13 | Sixpoint Materials, Inc. | Method of growing group III nitride crystals |
| US9822465B2 (en) | 2006-04-07 | 2017-11-21 | Sixpoint Materials, Inc. | Method of fabricating group III nitride with gradually degraded crystal structure |
| US9673044B2 (en) | 2006-04-07 | 2017-06-06 | Sixpoint Materials, Inc. | Group III nitride substrates and their fabrication method |
| US9543393B2 (en) | 2006-04-07 | 2017-01-10 | Sixpoint Materials, Inc. | Group III nitride wafer and its production method |
| WO2014051684A1 (en) | 2012-09-26 | 2014-04-03 | Sixpoint Materials, Inc. | Group iii nitride wafers and fabrication method and testing method |
| CN107002278B (zh) * | 2014-12-02 | 2019-07-09 | 希波特公司 | 第iii族氮化物晶体、其制造方法和在超临界氨气中制造块状第iii族氮化物晶体的方法 |
| WO2016090223A1 (en) * | 2014-12-04 | 2016-06-09 | Sixpoint Materials, Inc. | Group iii nitride substrates and their fabrication method |
| WO2018118220A1 (en) | 2016-12-23 | 2018-06-28 | Sixpoint Materials, Inc. | Electronic device using group iii nitride semiconductor and its fabrication method |
| WO2019066787A1 (en) | 2017-09-26 | 2019-04-04 | Sixpoint Materials, Inc. | CRYSTALLINE GERM FOR THE GROWTH OF A SOLID GALLIUM NITRIDE CRYSTAL IN SUPERCRITICAL AMMONIA AND METHOD OF MANUFACTURE |
| CN111886368B (zh) * | 2018-03-29 | 2022-07-26 | 日本碍子株式会社 | 13族元素氮化物层、自立基板、功能元件以及13族元素氮化物层的制造方法 |
| JP7158272B2 (ja) * | 2018-12-25 | 2022-10-21 | エア・ウォーター株式会社 | 化合物半導体基板 |
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| JPH1044142A (ja) * | 1996-08-01 | 1998-02-17 | Citizen Watch Co Ltd | マルチワイヤーソー |
| EP1307321A2 (en) | 2000-08-07 | 2003-05-07 | MEMC Electronic Materials, Inc. | Method for processing a semiconductor wafer using double-side polishing |
| US7072034B2 (en) | 2001-06-08 | 2006-07-04 | Kla-Tencor Corporation | Systems and methods for inspection of specimen surfaces |
| PL219109B1 (pl) | 2001-06-06 | 2015-03-31 | Ammono Spółka Z Ograniczoną Odpowiedzialnością | Sposób otrzymywania objętościowego monokrystalicznego azotku zawierającego gal oraz urządzenie do otrzymywania objętościowego monokrystalicznego azotku zawierającego gal |
| US6488767B1 (en) | 2001-06-08 | 2002-12-03 | Advanced Technology Materials, Inc. | High surface quality GaN wafer and method of fabricating same |
| US7501023B2 (en) * | 2001-07-06 | 2009-03-10 | Technologies And Devices, International, Inc. | Method and apparatus for fabricating crack-free Group III nitride semiconductor materials |
| IL161420A0 (en) | 2001-10-26 | 2004-09-27 | Ammono Sp Zoo | Substrate for epitaxy |
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| TWI334890B (en) * | 2002-12-11 | 2010-12-21 | Ammono Sp Zoo | Process for obtaining bulk mono-crystalline gallium-containing nitride, eliminating impurities from the obtained crystal and manufacturing substrates made of bulk mono-crystalline gallium-containing nitride |
| US7638815B2 (en) | 2002-12-27 | 2009-12-29 | Momentive Performance Materials Inc. | Crystalline composition, wafer, and semi-conductor structure |
| US7098487B2 (en) | 2002-12-27 | 2006-08-29 | General Electric Company | Gallium nitride crystal and method of making same |
| US7323256B2 (en) | 2003-11-13 | 2008-01-29 | Cree, Inc. | Large area, uniformly low dislocation density GaN substrate and process for making the same |
| KR100541111B1 (ko) * | 2004-06-25 | 2006-01-11 | 삼성전기주식회사 | 다파장 반도체 레이저 제조방법 |
| US20060124956A1 (en) * | 2004-12-13 | 2006-06-15 | Hui Peng | Quasi group III-nitride substrates and methods of mass production of the same |
| JP4849296B2 (ja) | 2005-04-11 | 2012-01-11 | 日立電線株式会社 | ＧａＮ基板 |
| JP4792802B2 (ja) | 2005-04-26 | 2011-10-12 | 住友電気工業株式会社 | Ｉｉｉ族窒化物結晶の表面処理方法 |
| US8709371B2 (en) | 2005-07-08 | 2014-04-29 | The Regents Of The University Of California | Method for growing group III-nitride crystals in supercritical ammonia using an autoclave |
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| WO2010113237A1 (ja) | 2009-04-03 | 2010-10-07 | パナソニック株式会社 | 窒化物系半導体素子およびその製造方法 |
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| JP5757068B2 (ja) * | 2010-08-02 | 2015-07-29 | 住友電気工業株式会社 | ＧａＮ結晶の成長方法 |
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| WO2014051684A1 (en) | 2012-09-26 | 2014-04-03 | Sixpoint Materials, Inc. | Group iii nitride wafers and fabrication method and testing method |
-
2013
- 2013-03-15 US US13/834,015 patent/US9202872B2/en active Active
- 2013-03-15 WO PCT/US2013/032103 patent/WO2014051692A1/en not_active Ceased
- 2013-03-15 KR KR1020157010291A patent/KR102096421B1/ko not_active Expired - Fee Related
- 2013-03-15 JP JP2015533041A patent/JP6169704B2/ja active Active
- 2013-03-15 EP EP13714781.5A patent/EP2900851B1/en active Active
- 2013-09-24 TW TW102134365A patent/TWI602959B/zh active
-
2015
- 2015-10-20 US US14/918,474 patent/US10316431B2/en active Active
-
2017
- 2017-02-13 JP JP2017023920A patent/JP6333427B2/ja active Active
-
2018
- 2018-02-06 JP JP2018019044A patent/JP2018065751A/ja not_active Withdrawn
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