JP2015529011A - 多孔性低誘電率膜の誘電率を低減させる方法 - Google Patents

多孔性低誘電率膜の誘電率を低減させる方法 Download PDF

Info

Publication number
JP2015529011A
JP2015529011A JP2015521627A JP2015521627A JP2015529011A JP 2015529011 A JP2015529011 A JP 2015529011A JP 2015521627 A JP2015521627 A JP 2015521627A JP 2015521627 A JP2015521627 A JP 2015521627A JP 2015529011 A JP2015529011 A JP 2015529011A
Authority
JP
Japan
Prior art keywords
dielectric constant
dielectric film
low dielectric
silicon
exposing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2015521627A
Other languages
English (en)
Japanese (ja)
Other versions
JP2015529011A5 (https=
Inventor
ケルヴィン チャン，
ケルヴィン チャン，
チン シュイ，
チン シュイ，
カン サブ イム，
カン サブ イム，
アレクサンドロス ティー． デモス，
アレクサンドロス ティー． デモス，
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2015529011A publication Critical patent/JP2015529011A/ja
Publication of JP2015529011A5 publication Critical patent/JP2015529011A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0462—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/072—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/093—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts
    • H10W20/095—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts by irradiating with electromagnetic or particle radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/093—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts
    • H10W20/096—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts by contacting with gases, liquids or plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/46—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts comprising air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/665—Porous materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
JP2015521627A 2012-07-13 2013-06-18 多孔性低誘電率膜の誘電率を低減させる方法 Pending JP2015529011A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261671191P 2012-07-13 2012-07-13
US61/671,191 2012-07-13
PCT/US2013/046285 WO2014011364A1 (en) 2012-07-13 2013-06-18 Method to reduce dielectric constant of a porous low-k film

Publications (2)

Publication Number Publication Date
JP2015529011A true JP2015529011A (ja) 2015-10-01
JP2015529011A5 JP2015529011A5 (https=) 2016-08-04

Family

ID=49914335

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015521627A Pending JP2015529011A (ja) 2012-07-13 2013-06-18 多孔性低誘電率膜の誘電率を低減させる方法

Country Status (6)

Country Link
US (1) US8993444B2 (https=)
JP (1) JP2015529011A (https=)
KR (1) KR102109482B1 (https=)
CN (1) CN104471687A (https=)
TW (1) TWI581331B (https=)
WO (1) WO2014011364A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115190919A (zh) * 2020-04-20 2022-10-14 应用材料公司 具有共用的气体输送和排气系统的多个热cvd腔室

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103109357B (zh) * 2010-10-19 2016-08-24 应用材料公司 用于紫外线纳米固化腔室的石英喷洒器
US9318364B2 (en) * 2014-01-13 2016-04-19 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device metallization systems and methods
US9362107B2 (en) * 2014-09-30 2016-06-07 Applied Materials, Inc. Flowable low-k dielectric gapfill treatment
KR102392447B1 (ko) * 2017-04-27 2022-04-28 도쿄엘렉트론가부시키가이샤 패터닝 필름으로서 유기실리케이트를 사용하는 방법 및 시스템
US11469100B2 (en) 2019-05-30 2022-10-11 Applied Materials, Inc. Methods of post treating dielectric films with microwave radiation
US12410523B1 (en) * 2024-03-29 2025-09-09 Applied Materials, Inc. Integrated low k recovery and ALD metal deposition process for advanced technology node

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000340651A (ja) * 1999-05-28 2000-12-08 Hitachi Chem Co Ltd 低誘電率膜の製造法
JP2002324838A (ja) * 2001-03-15 2002-11-08 Chartered Semiconductor Mfg Ltd デュアルダマシン相互接続における有機物誘電体の密着性を改良する方法
JP2006049798A (ja) * 2004-07-02 2006-02-16 Tokyo Electron Ltd 溝配線または接続孔を有する半導体装置の製造方法
JP2006077245A (ja) * 2004-09-07 2006-03-23 Rohm & Haas Electronic Materials Llc 多孔質物質およびその製造方法
JP2010287655A (ja) * 2009-06-10 2010-12-24 Toshiba Corp 半導体装置の製造方法
US20110117678A1 (en) * 2006-10-30 2011-05-19 Varadarajan Bhadri N Carbon containing low-k dielectric constant recovery using uv treatment

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6475930B1 (en) * 2000-01-31 2002-11-05 Motorola, Inc. UV cure process and tool for low k film formation
EP1172847A3 (en) * 2000-07-10 2004-07-28 Interuniversitair Micro-Elektronica Centrum Vzw A method to produce a porous oxygen-silicon layer
US7541200B1 (en) * 2002-01-24 2009-06-02 Novellus Systems, Inc. Treatment of low k films with a silylating agent for damage repair
US7709371B2 (en) * 2003-01-25 2010-05-04 Honeywell International Inc. Repairing damage to low-k dielectric materials using silylating agents
US7049247B2 (en) * 2004-05-03 2006-05-23 International Business Machines Corporation Method for fabricating an ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device made
US7678682B2 (en) * 2004-11-12 2010-03-16 Axcelis Technologies, Inc. Ultraviolet assisted pore sealing of porous low k dielectric films
CN1787186A (zh) * 2004-12-09 2006-06-14 富士通株式会社 半导体器件制造方法
US20060251827A1 (en) 2005-05-09 2006-11-09 Applied Materials, Inc. Tandem uv chamber for curing dielectric materials
US7482281B2 (en) 2005-09-29 2009-01-27 Tokyo Electron Limited Substrate processing method
US7500397B2 (en) 2007-02-15 2009-03-10 Air Products And Chemicals, Inc. Activated chemical process for enhancing material properties of dielectric films
US20090061633A1 (en) * 2007-08-31 2009-03-05 Fujitsu Limited Method of manufacturing semiconductor device
JP5304033B2 (ja) * 2007-08-31 2013-10-02 富士通株式会社 半導体装置の製造方法
US20100065758A1 (en) 2008-09-16 2010-03-18 Tokyo Electron Limited Dielectric material treatment system and method of operating
US20100087062A1 (en) 2008-10-06 2010-04-08 Applied Materials, Inc. High temperature bd development for memory applications
US8242460B2 (en) * 2010-03-29 2012-08-14 Tokyo Electron Limited Ultraviolet treatment apparatus
KR101928348B1 (ko) 2011-04-08 2018-12-12 어플라이드 머티어리얼스, 인코포레이티드 자외선 처리, 화학적 처리, 및 증착을 위한 장치 및 방법
US8492170B2 (en) * 2011-04-25 2013-07-23 Applied Materials, Inc. UV assisted silylation for recovery and pore sealing of damaged low K films
US8216861B1 (en) 2011-06-28 2012-07-10 Applied Materials, Inc. Dielectric recovery of plasma damaged low-k films by UV-assisted photochemical deposition

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000340651A (ja) * 1999-05-28 2000-12-08 Hitachi Chem Co Ltd 低誘電率膜の製造法
JP2002324838A (ja) * 2001-03-15 2002-11-08 Chartered Semiconductor Mfg Ltd デュアルダマシン相互接続における有機物誘電体の密着性を改良する方法
JP2006049798A (ja) * 2004-07-02 2006-02-16 Tokyo Electron Ltd 溝配線または接続孔を有する半導体装置の製造方法
JP2006077245A (ja) * 2004-09-07 2006-03-23 Rohm & Haas Electronic Materials Llc 多孔質物質およびその製造方法
US20110117678A1 (en) * 2006-10-30 2011-05-19 Varadarajan Bhadri N Carbon containing low-k dielectric constant recovery using uv treatment
JP2010287655A (ja) * 2009-06-10 2010-12-24 Toshiba Corp 半導体装置の製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115190919A (zh) * 2020-04-20 2022-10-14 应用材料公司 具有共用的气体输送和排气系统的多个热cvd腔室
JP2023517446A (ja) * 2020-04-20 2023-04-26 アプライド マテリアルズ インコーポレイテッド 共有供給及び排気システムを備えたマルチ熱ｃｖｄチャンバ
JP7462763B2 (ja) 2020-04-20 2024-04-05 アプライド マテリアルズ インコーポレイテッド 共有供給及び排気システムを備えたマルチ熱ｃｖｄチャンバ
US12037701B2 (en) 2020-04-20 2024-07-16 Applied Materials, Inc. Multi-thermal CVD chambers with shared gas delivery and exhaust system

Also Published As

Publication number Publication date
TWI581331B (zh) 2017-05-01
KR102109482B1 (ko) 2020-05-12
US8993444B2 (en) 2015-03-31
CN104471687A (zh) 2015-03-25
US20140017895A1 (en) 2014-01-16
KR20150035509A (ko) 2015-04-06
WO2014011364A1 (en) 2014-01-16
TW201405658A (zh) 2014-02-01

Similar Documents

Publication Publication Date Title
JP6422536B2 (ja) 気相化学曝露による低誘電率誘電体の損傷修復
US7851232B2 (en) UV treatment for carbon-containing low-k dielectric repair in semiconductor processing
KR102109482B1 (ko) 다공성 저-ｋ 막의 유전 상수를 감소시키기 위한 방법
JP5905476B2 (ja) Ｎａｎｏｃｕｒｅｕｖチャンバ用の石英シャワーヘッド
US8481422B2 (en) Prevention and reduction of solvent and solution penetration into porous dielectrics using a thin barrier layer
US8702870B2 (en) Superimposition of rapid periodic and extensive post multiple substrate UV-ozone clean sequences for high throughput and stable substrate to substrate performance
US8657961B2 (en) Method for UV based silylation chamber clean
KR20140010449A (ko) 손상된 저 k 필름들의 복구 및 기공 밀봉을 위한 자외선 보조형 시릴화
US10373823B2 (en) Deployment of light energy within specific spectral bands in specific sequences for deposition, treatment and removal of materials
TWI387050B (zh) 低介電係數絕緣膜之損壞復原方法及半導體裝置之製造方法
WO2015084538A1 (en) Uv-assisted photochemical vapor deposition for damaged low k films pore sealing
JP2004363558A (ja) 半導体装置の製造方法およびプラズマエッチング装置のクリーニング方法
US20200381248A1 (en) Methods of post treating dielectric films with microwave radiation
CN102077316A (zh) 用于高产量及稳定逐基材表现的快速周期和广泛的后期紫外臭氧清洗程序的添加
JP2012204693A (ja) 基板処理装置及び半導体装置の製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160616

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20160616

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20170221

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170517

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20170926

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20171225

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20180226

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20180605