KR102109482B1 - 다공성 저-ｋ 막의 유전 상수를 감소시키기 위한 방법 - Google Patents

다공성 저-ｋ 막의 유전 상수를 감소시키기 위한 방법 Download PDF

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KR102109482B1
KR102109482B1 KR1020147029230A KR20147029230A KR102109482B1 KR 102109482 B1 KR102109482 B1 KR 102109482B1 KR 1020147029230 A KR1020147029230 A KR 1020147029230A KR 20147029230 A KR20147029230 A KR 20147029230A KR 102109482 B1 KR102109482 B1 KR 102109482B1
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low
dielectric film
silicon
containing dielectric
exposing
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KR20150035509A (ko
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켈빈 찬
진 수
강섭 임
알렉산드로스 티. 데모스
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어플라이드 머티어리얼스, 인코포레이티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0462—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/072—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/093—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts
    • H10W20/095—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts by irradiating with electromagnetic or particle radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/093—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts
    • H10W20/096—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts by contacting with gases, liquids or plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/46—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts comprising air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/665—Porous materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
KR1020147029230A 2012-07-13 2013-06-18 다공성 저-ｋ 막의 유전 상수를 감소시키기 위한 방법 Active KR102109482B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261671191P 2012-07-13 2012-07-13
US61/671,191 2012-07-13
PCT/US2013/046285 WO2014011364A1 (en) 2012-07-13 2013-06-18 Method to reduce dielectric constant of a porous low-k film

Publications (2)

Publication Number Publication Date
KR20150035509A KR20150035509A (ko) 2015-04-06
KR102109482B1 true KR102109482B1 (ko) 2020-05-12

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Country Link
US (1) US8993444B2 (https=)
JP (1) JP2015529011A (https=)
KR (1) KR102109482B1 (https=)
CN (1) CN104471687A (https=)
TW (1) TWI581331B (https=)
WO (1) WO2014011364A1 (https=)

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Publication number Priority date Publication date Assignee Title
CN103109357B (zh) * 2010-10-19 2016-08-24 应用材料公司 用于紫外线纳米固化腔室的石英喷洒器
US9318364B2 (en) * 2014-01-13 2016-04-19 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device metallization systems and methods
US9362107B2 (en) * 2014-09-30 2016-06-07 Applied Materials, Inc. Flowable low-k dielectric gapfill treatment
KR102392447B1 (ko) * 2017-04-27 2022-04-28 도쿄엘렉트론가부시키가이샤 패터닝 필름으로서 유기실리케이트를 사용하는 방법 및 시스템
US11469100B2 (en) 2019-05-30 2022-10-11 Applied Materials, Inc. Methods of post treating dielectric films with microwave radiation
JP7462763B2 (ja) * 2020-04-20 2024-04-05 アプライド マテリアルズ インコーポレイテッド 共有供給及び排気システムを備えたマルチ熱ｃｖｄチャンバ
US12410523B1 (en) * 2024-03-29 2025-09-09 Applied Materials, Inc. Integrated low k recovery and ALD metal deposition process for advanced technology node

Citations (5)

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JP2000340651A (ja) 1999-05-28 2000-12-08 Hitachi Chem Co Ltd 低誘電率膜の製造法
US20020022378A1 (en) * 2000-07-10 2002-02-21 Mikhail Baklanov Method to produce a porous oxygen-silicon layer
JP2002324838A (ja) 2001-03-15 2002-11-08 Chartered Semiconductor Mfg Ltd デュアルダマシン相互接続における有機物誘電体の密着性を改良する方法
JP2006077245A (ja) 2004-09-07 2006-03-23 Rohm & Haas Electronic Materials Llc 多孔質物質およびその製造方法
US20110117678A1 (en) 2006-10-30 2011-05-19 Varadarajan Bhadri N Carbon containing low-k dielectric constant recovery using uv treatment

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US6475930B1 (en) * 2000-01-31 2002-11-05 Motorola, Inc. UV cure process and tool for low k film formation
US7541200B1 (en) * 2002-01-24 2009-06-02 Novellus Systems, Inc. Treatment of low k films with a silylating agent for damage repair
US7709371B2 (en) * 2003-01-25 2010-05-04 Honeywell International Inc. Repairing damage to low-k dielectric materials using silylating agents
US7049247B2 (en) * 2004-05-03 2006-05-23 International Business Machines Corporation Method for fabricating an ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device made
JP5057647B2 (ja) * 2004-07-02 2012-10-24 東京エレクトロン株式会社 半導体装置の製造方法および半導体装置の製造装置
US7678682B2 (en) * 2004-11-12 2010-03-16 Axcelis Technologies, Inc. Ultraviolet assisted pore sealing of porous low k dielectric films
CN1787186A (zh) * 2004-12-09 2006-06-14 富士通株式会社 半导体器件制造方法
US20060251827A1 (en) 2005-05-09 2006-11-09 Applied Materials, Inc. Tandem uv chamber for curing dielectric materials
US7482281B2 (en) 2005-09-29 2009-01-27 Tokyo Electron Limited Substrate processing method
US7500397B2 (en) 2007-02-15 2009-03-10 Air Products And Chemicals, Inc. Activated chemical process for enhancing material properties of dielectric films
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JP5304033B2 (ja) * 2007-08-31 2013-10-02 富士通株式会社 半導体装置の製造方法
US20100065758A1 (en) 2008-09-16 2010-03-18 Tokyo Electron Limited Dielectric material treatment system and method of operating
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Publication number Priority date Publication date Assignee Title
JP2000340651A (ja) 1999-05-28 2000-12-08 Hitachi Chem Co Ltd 低誘電率膜の製造法
US20020022378A1 (en) * 2000-07-10 2002-02-21 Mikhail Baklanov Method to produce a porous oxygen-silicon layer
JP2002324838A (ja) 2001-03-15 2002-11-08 Chartered Semiconductor Mfg Ltd デュアルダマシン相互接続における有機物誘電体の密着性を改良する方法
JP2006077245A (ja) 2004-09-07 2006-03-23 Rohm & Haas Electronic Materials Llc 多孔質物質およびその製造方法
US20110117678A1 (en) 2006-10-30 2011-05-19 Varadarajan Bhadri N Carbon containing low-k dielectric constant recovery using uv treatment

Also Published As

Publication number Publication date
TWI581331B (zh) 2017-05-01
US8993444B2 (en) 2015-03-31
CN104471687A (zh) 2015-03-25
US20140017895A1 (en) 2014-01-16
KR20150035509A (ko) 2015-04-06
JP2015529011A (ja) 2015-10-01
WO2014011364A1 (en) 2014-01-16
TW201405658A (zh) 2014-02-01

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