JP2015520511A - 耐ソフトエラー回路 - Google Patents
耐ソフトエラー回路 Download PDFInfo
- Publication number
- JP2015520511A JP2015520511A JP2015512745A JP2015512745A JP2015520511A JP 2015520511 A JP2015520511 A JP 2015520511A JP 2015512745 A JP2015512745 A JP 2015512745A JP 2015512745 A JP2015512745 A JP 2015512745A JP 2015520511 A JP2015520511 A JP 2015520511A
- Authority
- JP
- Japan
- Prior art keywords
- thermal neutron
- assembly
- layer
- integrated circuit
- neutron absorber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000006096 absorbing agent Substances 0.000 claims abstract description 100
- 239000012778 molding material Substances 0.000 claims abstract description 35
- 239000011521 glass Substances 0.000 claims abstract description 34
- 239000012528 membrane Substances 0.000 claims description 27
- 238000010521 absorption reaction Methods 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 25
- 238000000576 coating method Methods 0.000 claims description 22
- 239000011248 coating agent Substances 0.000 claims description 19
- ZOXJGFHDIHLPTG-BJUDXGSMSA-N Boron-10 Chemical compound [10B] ZOXJGFHDIHLPTG-BJUDXGSMSA-N 0.000 claims description 17
- 239000000835 fiber Substances 0.000 claims description 16
- QDWJUBJKEHXSMT-UHFFFAOYSA-N boranylidynenickel Chemical compound [Ni]#B QDWJUBJKEHXSMT-UHFFFAOYSA-N 0.000 claims description 12
- 229920000642 polymer Polymers 0.000 claims description 11
- 239000004593 Epoxy Substances 0.000 claims description 9
- 239000004642 Polyimide Substances 0.000 claims description 9
- 239000005388 borosilicate glass Substances 0.000 claims description 9
- 229920001721 polyimide Polymers 0.000 claims description 9
- 229920001296 polysiloxane Polymers 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 8
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 claims description 6
- 239000004952 Polyamide Substances 0.000 claims description 6
- 239000004721 Polyphenylene oxide Substances 0.000 claims description 6
- 239000004734 Polyphenylene sulfide Substances 0.000 claims description 6
- 229920001577 copolymer Polymers 0.000 claims description 6
- 239000005011 phenolic resin Substances 0.000 claims description 6
- 229920002647 polyamide Polymers 0.000 claims description 6
- 229920000728 polyester Polymers 0.000 claims description 6
- 229920000098 polyolefin Polymers 0.000 claims description 6
- 229920006380 polyphenylene oxide Polymers 0.000 claims description 6
- 229920000069 polyphenylene sulfide Polymers 0.000 claims description 6
- 229920002635 polyurethane Polymers 0.000 claims description 6
- 239000004814 polyurethane Substances 0.000 claims description 6
- 230000008878 coupling Effects 0.000 claims description 4
- 238000010168 coupling process Methods 0.000 claims description 4
- 238000005859 coupling reaction Methods 0.000 claims description 4
- 239000000853 adhesive Substances 0.000 description 17
- 230000001070 adhesive effect Effects 0.000 description 17
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 8
- 229910052796 boron Inorganic materials 0.000 description 8
- 239000000945 filler Substances 0.000 description 8
- 230000008901 benefit Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 239000002245 particle Substances 0.000 description 7
- 229910052688 Gadolinium Inorganic materials 0.000 description 5
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 5
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 4
- BDOSMKKIYDKNTQ-OUBTZVSYSA-N Cadmium-113 Chemical compound [113Cd] BDOSMKKIYDKNTQ-OUBTZVSYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229920001568 phenolic resin Polymers 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 230000000712 assembly Effects 0.000 description 3
- 238000000429 assembly Methods 0.000 description 3
- XBJJRSFLZVLCSE-UHFFFAOYSA-N barium(2+);diborate Chemical compound [Ba+2].[Ba+2].[Ba+2].[O-]B([O-])[O-].[O-]B([O-])[O-] XBJJRSFLZVLCSE-UHFFFAOYSA-N 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- ZSLUVFAKFWKJRC-IGMARMGPSA-N 232Th Chemical compound [232Th] ZSLUVFAKFWKJRC-IGMARMGPSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052776 Thorium Inorganic materials 0.000 description 2
- 229910052770 Uranium Inorganic materials 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 description 1
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- WUASPBGQSRNQER-UHFFFAOYSA-K [F-].C([O-])([O-])=O.[Gd+3] Chemical compound [F-].C([O-])([O-])=O.[Gd+3] WUASPBGQSRNQER-UHFFFAOYSA-K 0.000 description 1
- RREGISFBPQOLTM-UHFFFAOYSA-N alumane;trihydrate Chemical compound O.O.O.[AlH3] RREGISFBPQOLTM-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 1
- 239000005385 borate glass Substances 0.000 description 1
- 229910021538 borax Inorganic materials 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- QCUOBSQYDGUHHT-UHFFFAOYSA-L cadmium sulfate Chemical compound [Cd+2].[O-]S([O-])(=O)=O QCUOBSQYDGUHHT-UHFFFAOYSA-L 0.000 description 1
- 229910000331 cadmium sulfate Inorganic materials 0.000 description 1
- 229910052918 calcium silicate Inorganic materials 0.000 description 1
- 239000000378 calcium silicate Substances 0.000 description 1
- OYACROKNLOSFPA-UHFFFAOYSA-N calcium;dioxido(oxo)silane Chemical compound [Ca+2].[O-][Si]([O-])=O OYACROKNLOSFPA-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- DZDOUVFKFOGELS-UHFFFAOYSA-N gadolinium phosphoric acid Chemical compound [Gd].P(O)(O)(O)=O DZDOUVFKFOGELS-UHFFFAOYSA-N 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 235000010339 sodium tetraborate Nutrition 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- VLCLHFYFMCKBRP-UHFFFAOYSA-N tricalcium;diborate Chemical compound [Ca+2].[Ca+2].[Ca+2].[O-]B([O-])[O-].[O-]B([O-])[O-] VLCLHFYFMCKBRP-UHFFFAOYSA-N 0.000 description 1
- TYIZUJNEZNBXRS-UHFFFAOYSA-K trifluorogadolinium Chemical compound F[Gd](F)F TYIZUJNEZNBXRS-UHFFFAOYSA-K 0.000 description 1
- BSVBQGMMJUBVOD-UHFFFAOYSA-N trisodium borate Chemical compound [Na+].[Na+].[Na+].[O-]B([O-])[O-] BSVBQGMMJUBVOD-UHFFFAOYSA-N 0.000 description 1
- BIKXLKXABVUSMH-UHFFFAOYSA-N trizinc;diborate Chemical compound [Zn+2].[Zn+2].[Zn+2].[O-]B([O-])[O-].[O-]B([O-])[O-] BIKXLKXABVUSMH-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21F—PROTECTION AGAINST X-RADIATION, GAMMA RADIATION, CORPUSCULAR RADIATION OR PARTICLE BOMBARDMENT; TREATING RADIOACTIVELY CONTAMINATED MATERIAL; DECONTAMINATION ARRANGEMENTS THEREFOR
- G21F1/00—Shielding characterised by the composition of the materials
- G21F1/02—Selection of uniform shielding materials
- G21F1/10—Organic substances; Dispersions in organic carriers
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21F—PROTECTION AGAINST X-RADIATION, GAMMA RADIATION, CORPUSCULAR RADIATION OR PARTICLE BOMBARDMENT; TREATING RADIOACTIVELY CONTAMINATED MATERIAL; DECONTAMINATION ARRANGEMENTS THEREFOR
- G21F1/00—Shielding characterised by the composition of the materials
- G21F1/02—Selection of uniform shielding materials
- G21F1/08—Metals; Alloys; Cermets, i.e. sintered mixtures of ceramics and metals
- G21F1/085—Heavy metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3731—Ceramic materials or glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3732—Diamonds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
- H01L23/556—Protection against radiation, e.g. light or electromagnetic waves against alpha rays
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/28—Applying non-metallic protective coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3192—Multilayer coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0137—Materials
- H05K2201/017—Glass ceramic coating, e.g. formed on inorganic substrate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Metallurgy (AREA)
- High Energy & Nuclear Physics (AREA)
- General Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Electromagnetism (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Dispersion Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Laminated Bodies (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (23)
- 集積回路と、
前記集積回路の上に配置され、かつ少なくとも50マイクロメートルの厚さを有する膜層と、
少なくとも0.5%の熱中性子吸収体を含む熱中性子吸収層と、を備える、
アセンブリ。 - 前記熱中性子吸収層は、少なくとも0.8%の熱中性子吸収体を含む、請求項1に記載のアセンブリ。
- 前記熱中性子吸収体は、ホウ素10を含む、請求項1に記載のアセンブリ。
- 前記膜層の厚さは、少なくとも60マイクロメートルである、請求項1に記載のアセンブリ。
- 前記膜層は、ポリエステル、ポリアミド、ポリフェニレンサルファイド、ポリフェニレンオキシド、シリコーン、フェノール樹脂、エポキシ、アクリレート、アクリロニトリルブタジエン共重合体、ポリイミド、ポリウレタン、およびポリオレフィンからなる群から選択されたポリマー、またはそれらの組合せを含む、請求項1に記載のアセンブリ。
- 前記熱中性子吸収層は、少なくとも70マイクロメートルの厚さを有する、請求項1に記載のアセンブリ。
- 前記熱中性子吸収層は、ホウケイ酸ガラスを含む、請求項1に記載のアセンブリ。
- 前記熱中性子吸収層は、成形材料を含む、請求項1に記載のアセンブリ。
- 前記膜層と反対側で前記集積回路に結合されたプリント回路基板をさらに備える、請求項1に記載のアセンブリ。
- 前記プリント回路基板は、熱中性子吸収体の少なくとも0.5%を含むファイバを含む、請求項9に記載のアセンブリ。
- 前記プリント回路基板は、無電解ホウ素ニッケルコーティングを備える、請求項9に記載のアセンブリ。
- 電子アセンブリを形成する方法であって、
集積回路を供給することと、
前記集積回路の上に膜層を堆積させることであって、該膜層は少なくとも50マイクロメートルの厚さを有することと、
前記膜層の上に熱中性子吸収層を設けることであって、該熱中性子吸収層は、少なくとも0.5%の熱中性子吸収体を有することと、を含む、
方法。 - 前記熱中性子吸収層は、熱中性子吸収ガラス層を含む、請求項12に記載の方法。
- 前記熱中性子吸収層は、成形材料を含む、請求項12に記載の方法。
- 前記集積回路をプリント回路基板に結合することをさらに含む、請求項12に記載の方法。
- 集積回路と、
前記集積回路の上に配置され、かつ少なくとも50マイクロメートルの厚さを有する膜層と、
少なくとも0.5%の熱中性子吸収体を含む熱中性子吸収ガラス層と、を備える、
アセンブリ。 - 前記熱中性子吸収体は、ホウ素10を含む、請求項16に記載のアセンブリ。
- 前記膜層の厚さは、少なくとも60マイクロメートルである、請求項16に記載のアセンブリ。
- 前記熱中性子吸収ガラス層は、少なくとも70マイクロメートルの厚さを有する、請求項16に記載のアセンブリ。
- 前記熱中性子吸収ガラス層は、ホウケイ酸ガラスを含む、請求項16に記載のアセンブリ。
- 前記熱中性子吸収ガラス層の上に配置された成形材料をさらに備え、該成形材料は、熱中性子吸収体の少なくとも0.5%を含む、請求項16に記載のアセンブリ。
- 前記膜層と反対側で前記集積回路に結合されたプリント回路基板をさらに備え、該プリント回路基板は、熱中性子吸収体の少なくとも0.5%を含むファイバを含む、請求項16に記載のアセンブリ。
- 前記プリント回路基板は、無電解ホウ素ニッケルコーティングを備える、請求項22に記載のアセンブリ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/471,854 US8946663B2 (en) | 2012-05-15 | 2012-05-15 | Soft error resistant circuitry |
US13/471,854 | 2012-05-15 | ||
PCT/US2013/040904 WO2013173302A1 (en) | 2012-05-15 | 2013-05-14 | Soft error resistant circuitry |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015520511A true JP2015520511A (ja) | 2015-07-16 |
JP6125618B2 JP6125618B2 (ja) | 2017-05-10 |
Family
ID=49580557
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015512745A Active JP6125618B2 (ja) | 2012-05-15 | 2013-05-14 | 耐ソフトエラー回路 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8946663B2 (ja) |
EP (2) | EP3780090A1 (ja) |
JP (1) | JP6125618B2 (ja) |
KR (2) | KR102234414B1 (ja) |
CN (1) | CN104685620B (ja) |
WO (1) | WO2013173302A1 (ja) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11354690A (ja) * | 1998-06-05 | 1999-12-24 | Mitsubishi Electric Corp | 半導体装置 |
JP2008311316A (ja) * | 2007-06-12 | 2008-12-25 | Tokuyama Corp | メタライズド基板およびその製造方法 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59208862A (ja) * | 1983-05-13 | 1984-11-27 | Hitachi Micro Comput Eng Ltd | 半導体装置 |
US5235239A (en) * | 1990-04-17 | 1993-08-10 | Science Research Laboratory, Inc. | Window construction for a particle accelerator |
US5235139A (en) | 1990-09-12 | 1993-08-10 | Macdermid, Incorprated | Method for fabricating printed circuits |
JP3175979B2 (ja) | 1992-09-14 | 2001-06-11 | 株式会社東芝 | 樹脂封止型半導体装置 |
US6239479B1 (en) * | 1995-04-03 | 2001-05-29 | Texas Instruments Incorporated | Thermal neutron shielded integrated circuits |
US5780163A (en) | 1996-06-05 | 1998-07-14 | Dow Corning Corporation | Multilayer coating for microelectronic devices |
US6403882B1 (en) | 1997-06-30 | 2002-06-11 | International Business Machines Corporation | Protective cover plate for flip chip assembly backside |
US6768198B1 (en) | 1998-11-17 | 2004-07-27 | Advanced Micro Devices, Inc. | Method and system for removing conductive lines during deprocessing |
JP2001255379A (ja) | 2000-03-08 | 2001-09-21 | Fuji Electric Co Ltd | 中性子検出器 |
ATE315888T1 (de) | 2000-11-20 | 2006-02-15 | Parker Hannifin Corp | Interferenzverringerung mittels leitender thermoplastischer verbundmaterialien |
JP3645197B2 (ja) | 2001-06-12 | 2005-05-11 | 日東電工株式会社 | 半導体装置およびそれに用いる半導体封止用エポキシ樹脂組成物 |
US6998532B2 (en) | 2002-12-24 | 2006-02-14 | Matsushita Electric Industrial Co., Ltd. | Electronic component-built-in module |
US8119191B2 (en) | 2003-01-16 | 2012-02-21 | Parker-Hannifin Corporation | Dispensable cured resin |
JP2005268730A (ja) | 2004-03-22 | 2005-09-29 | Toshiba Corp | 半導体装置 |
US7279407B2 (en) * | 2004-09-02 | 2007-10-09 | Micron Technology, Inc. | Selective nickel plating of aluminum, copper, and tungsten structures |
CN1755929B (zh) | 2004-09-28 | 2010-08-18 | 飞思卡尔半导体(中国)有限公司 | 形成半导体封装及其结构的方法 |
US20100193972A1 (en) | 2006-06-06 | 2010-08-05 | Nitto Denko Corporation | Spherical sintered ferrite particles, resin composition for semiconductor encapsulation comprising them and semiconductor devices produced by using the same |
JP2008172054A (ja) | 2007-01-12 | 2008-07-24 | Sumitomo Bakelite Co Ltd | 半導体封止用樹脂組成物及び半導体装置 |
EP2176687A2 (en) * | 2007-08-10 | 2010-04-21 | Schlumberger Technology B.V. | Ruggedized neutron shields |
US9293420B2 (en) | 2009-06-29 | 2016-03-22 | Cypress Semiconductor Corporation | Electronic device having a molding compound including a composite material |
-
2012
- 2012-05-15 US US13/471,854 patent/US8946663B2/en active Active
-
2013
- 2013-05-14 EP EP20174193.1A patent/EP3780090A1/en active Pending
- 2013-05-14 KR KR1020207031343A patent/KR102234414B1/ko active IP Right Grant
- 2013-05-14 EP EP13790045.2A patent/EP2850656A4/en not_active Ceased
- 2013-05-14 KR KR20147034452A patent/KR20150008466A/ko not_active IP Right Cessation
- 2013-05-14 WO PCT/US2013/040904 patent/WO2013173302A1/en active Application Filing
- 2013-05-14 CN CN201380037766.0A patent/CN104685620B/zh active Active
- 2013-05-14 JP JP2015512745A patent/JP6125618B2/ja active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11354690A (ja) * | 1998-06-05 | 1999-12-24 | Mitsubishi Electric Corp | 半導体装置 |
JP2008311316A (ja) * | 2007-06-12 | 2008-12-25 | Tokuyama Corp | メタライズド基板およびその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JP6125618B2 (ja) | 2017-05-10 |
EP2850656A1 (en) | 2015-03-25 |
EP3780090A1 (en) | 2021-02-17 |
KR20150008466A (ko) | 2015-01-22 |
EP2850656A4 (en) | 2015-11-11 |
US20130306885A1 (en) | 2013-11-21 |
WO2013173302A8 (en) | 2014-01-23 |
WO2013173302A1 (en) | 2013-11-21 |
US8946663B2 (en) | 2015-02-03 |
CN104685620A (zh) | 2015-06-03 |
CN104685620B (zh) | 2018-12-21 |
KR20200129162A (ko) | 2020-11-17 |
KR102234414B1 (ko) | 2021-03-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6372898B2 (ja) | 磁気遮蔽集積回路パッケージ | |
JP2009141020A (ja) | 電子部品封止用シート | |
CN102623482A (zh) | Mram器件及其装配方法 | |
JP2011228637A (ja) | チップ保護用フィルム | |
US20100317155A1 (en) | Multifunctional die attachment film and semiconductor packaging using the same | |
JP5397243B2 (ja) | 半導体装置の製造方法及び回路部材接続用接着シート | |
JP5515811B2 (ja) | 半導体装置の製造方法及び回路部材接続用接着シート | |
JP6125618B2 (ja) | 耐ソフトエラー回路 | |
US20120090883A1 (en) | Method and Apparatus for Improving Substrate Warpage | |
JPH11354690A (ja) | 半導体装置 | |
JP2002134531A5 (ja) | 半導体素子搭載用接着フィルム | |
JP6320517B2 (ja) | 耐放射線強化した超小型電子チップのパッケージング技術 | |
CN104212369A (zh) | 热固型芯片接合薄膜、带切割片的芯片接合薄膜和半导体装置的制造方法 | |
US6436737B1 (en) | Method for reducing soft error rates in semiconductor devices | |
US9293420B2 (en) | Electronic device having a molding compound including a composite material | |
JP4897979B2 (ja) | チップ保護用フィルム | |
JP2003096426A (ja) | 接着部材 | |
JP2005202382A (ja) | 光プリント回路基板、面実装型半導体パッケージ、及びマザーボード | |
KR20190035581A (ko) | 커버 시트 및 이를 포함하는 유기전자장치 | |
EP2997595B1 (en) | Method of forming a radiation hardened microelectronic chip package | |
CN117836938A (zh) | 用于半导体装置的辐射保护及相关联系统及方法 | |
KR20240102478A (ko) | 충격 흡수 방열 테이프 | |
KR101452856B1 (ko) | 에폭시기 함유 아크릴 공중합체 수지를 이용한 감광성 접착필름 | |
KR20220018962A (ko) | 접착제 조성물 및 그 선정 방법, 접착 필름 및 그 제조 방법, 및 접착체 및 그 제조 방법 | |
JP2014007426A (ja) | 回路部材接続用接着シート及び半導体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A712 Effective date: 20160118 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20160411 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20160810 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20160818 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20161104 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170227 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20170307 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20170324 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20170405 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6125618 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |