JP2015511766A5 - - Google Patents
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- JP2015511766A5 JP2015511766A5 JP2014559290A JP2014559290A JP2015511766A5 JP 2015511766 A5 JP2015511766 A5 JP 2015511766A5 JP 2014559290 A JP2014559290 A JP 2014559290A JP 2014559290 A JP2014559290 A JP 2014559290A JP 2015511766 A5 JP2015511766 A5 JP 2015511766A5
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- Prior art keywords
- processing
- devices
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Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB1203530.9 | 2012-02-29 | ||
| GB1203530.9A GB2499816A (en) | 2012-02-29 | 2012-02-29 | Controlling deposition and etching in a chamber with fine time control of parameters and gas flow |
| PCT/GB2013/050481 WO2013128181A1 (en) | 2012-02-29 | 2013-02-27 | Methods and apparatus for depositing and/or etching material on a substrate |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015511766A JP2015511766A (ja) | 2015-04-20 |
| JP2015511766A5 true JP2015511766A5 (enExample) | 2016-04-21 |
| JP6217654B2 JP6217654B2 (ja) | 2017-10-25 |
Family
ID=45991923
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014559290A Active JP6217654B2 (ja) | 2012-02-29 | 2013-02-27 | 基板に物質を堆積及び／又は基板から物質をエッチング除去する方法及び装置 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9412566B2 (enExample) |
| EP (2) | EP2820670B1 (enExample) |
| JP (1) | JP6217654B2 (enExample) |
| KR (1) | KR102181719B1 (enExample) |
| GB (1) | GB2499816A (enExample) |
| TW (1) | TWI608533B (enExample) |
| WO (1) | WO2013128181A1 (enExample) |
Families Citing this family (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9054050B2 (en) * | 2013-11-06 | 2015-06-09 | Tokyo Electron Limited | Method for deep silicon etching using gas pulsing |
| GB201322931D0 (en) * | 2013-12-23 | 2014-02-12 | Spts Technologies Ltd | Method of etching |
| JP6158111B2 (ja) * | 2014-02-12 | 2017-07-05 | 東京エレクトロン株式会社 | ガス供給方法及び半導体製造装置 |
| KR20160012302A (ko) * | 2014-07-23 | 2016-02-03 | 삼성전자주식회사 | 기판 제조 방법 및 그에 사용되는 기판 제조 장치 |
| CN105374737B (zh) * | 2014-08-25 | 2019-02-26 | 中微半导体设备(上海)有限公司 | 抑制刻蚀过程中孔底部出现缺口的方法、孔的形成方法 |
| US20160225652A1 (en) | 2015-02-03 | 2016-08-04 | Applied Materials, Inc. | Low temperature chuck for plasma processing systems |
| US10020264B2 (en) * | 2015-04-28 | 2018-07-10 | Infineon Technologies Ag | Integrated circuit substrate and method for manufacturing the same |
| JP6533998B2 (ja) * | 2015-05-13 | 2019-06-26 | 国立研究開発法人産業技術総合研究所 | ドライエッチング方法 |
| TWI676357B (zh) * | 2015-06-05 | 2019-11-01 | 美商蘭姆研究公司 | 配方組之執行同步系統與方法 |
| US20160372306A1 (en) * | 2015-06-18 | 2016-12-22 | Tokyo Electron Limited | Method for Controlling Plasma Uniformity in Plasma Processing Systems |
| US9978606B2 (en) * | 2015-10-02 | 2018-05-22 | Applied Materials, Inc. | Methods for atomic level resolution and plasma processing control |
| US9595451B1 (en) * | 2015-10-19 | 2017-03-14 | Applied Materials, Inc. | Highly selective etching methods for etching dielectric materials |
| JP2017079273A (ja) * | 2015-10-21 | 2017-04-27 | パナソニックＩｐマネジメント株式会社 | プラズマ処理方法 |
| US9824896B2 (en) * | 2015-11-04 | 2017-11-21 | Lam Research Corporation | Methods and systems for advanced ion control for etching processes |
| WO2017150628A1 (ja) * | 2016-03-02 | 2017-09-08 | 国立研究開発法人産業技術総合研究所 | 微細立体構造形成方法、及び微細立体構造 |
| US9865484B1 (en) * | 2016-06-29 | 2018-01-09 | Applied Materials, Inc. | Selective etch using material modification and RF pulsing |
| US20180061696A1 (en) * | 2016-08-23 | 2018-03-01 | Applied Materials, Inc. | Edge ring or process kit for semiconductor process module |
| US9997364B2 (en) * | 2016-10-19 | 2018-06-12 | Lam Research Corporation | High aspect ratio etch |
| JP6807558B2 (ja) * | 2016-11-08 | 2021-01-06 | パナソニックＩｐマネジメント株式会社 | プラズマ処理方法およびプラズマ処理装置 |
| GB201708927D0 (en) | 2017-06-05 | 2017-07-19 | Spts Technologies Ltd | Methods of plasma etching and plasma dicing |
| US11664206B2 (en) * | 2017-11-08 | 2023-05-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Arcing protection method and processing tool |
| US10529578B2 (en) * | 2017-11-12 | 2020-01-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of fabricating semiconductor structure |
| DE102018010532B4 (de) | 2017-11-12 | 2024-04-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Verfahren zur Herstellung einer Halbleiterstruktur |
| GB201811873D0 (en) | 2018-07-20 | 2018-09-05 | Oxford Instruments Nanotechnology Tools Ltd | Semiconductor etching methods |
| CN109218945A (zh) * | 2018-08-07 | 2019-01-15 | 瑞声科技(新加坡)有限公司 | Mems结构的制造方法、mems结构及硅麦克风 |
| KR102829107B1 (ko) | 2019-05-02 | 2025-07-07 | 삼성전자주식회사 | Euv 노광 장치 및 그를 이용한 반도체 소자의 제조 방법 |
| US20210210355A1 (en) * | 2020-01-08 | 2021-07-08 | Tokyo Electron Limited | Methods of Plasma Processing Using a Pulsed Electron Beam |
| DE102020216518B4 (de) * | 2020-12-22 | 2023-08-17 | Carl Zeiss Smt Gmbh | Endpunktbestimmung mittels Kontrastgas |
| CN113097062B (zh) * | 2021-03-22 | 2024-06-21 | 北京北方华创微电子装备有限公司 | 刻蚀工艺方法及装置 |
| WO2022210043A1 (ja) * | 2021-03-30 | 2022-10-06 | 東京エレクトロン株式会社 | エッチング方法及びエッチング装置 |
| US12314032B2 (en) * | 2022-05-03 | 2025-05-27 | Nanya Technology Corporation | Method for controlling deposition tool |
| GB2626184A (en) | 2023-01-13 | 2024-07-17 | Oxford Instruments Nanotechnology Tools Ltd | Methods of manufacturing superconducting via through semiconductor wafer |
| US20250378138A1 (en) * | 2024-06-11 | 2025-12-11 | Applied Materials, Inc. | System and method for chamber matching using phase-based scoring |
| WO2026078383A1 (en) | 2024-10-09 | 2026-04-16 | Oxford Instruments Nanotechnology Tools Limited | Methods of manufacture and surface treatment of semiconductor structures |
| CN122581017A (zh) * | 2024-12-13 | 2026-08-14 | 株式会社日立高新技术 | 等离子体处理方法 |
Family Cites Families (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4241045C1 (de) | 1992-12-05 | 1994-05-26 | Bosch Gmbh Robert | Verfahren zum anisotropen Ätzen von Silicium |
| JP3778299B2 (ja) * | 1995-02-07 | 2006-05-24 | 東京エレクトロン株式会社 | プラズマエッチング方法 |
| JPH08250479A (ja) * | 1995-03-15 | 1996-09-27 | Hitachi Ltd | 表面処理方法及び表面処理装置 |
| US5735960A (en) * | 1996-04-02 | 1998-04-07 | Micron Technology, Inc. | Apparatus and method to increase gas residence time in a reactor |
| DE69725245T2 (de) | 1996-08-01 | 2004-08-12 | Surface Technoloy Systems Plc | Verfahren zur Ätzung von Substraten |
| GB9616225D0 (en) * | 1996-08-01 | 1996-09-11 | Surface Tech Sys Ltd | Method of surface treatment of semiconductor substrates |
| US6187685B1 (en) * | 1997-08-01 | 2001-02-13 | Surface Technology Systems Limited | Method and apparatus for etching a substrate |
| US7354873B2 (en) * | 1998-02-05 | 2008-04-08 | Asm Japan K.K. | Method for forming insulation film |
| DE69942034D1 (de) | 1998-11-04 | 2010-04-01 | Surface Technology Systems Plc | Verfahren zur ätzung eines substrats |
| JP3848018B2 (ja) * | 1999-07-09 | 2006-11-22 | キヤノン株式会社 | 機能性堆積膜の製造方法及び該機能性堆積膜の製造装置 |
| US6749763B1 (en) * | 1999-08-02 | 2004-06-15 | Matsushita Electric Industrial Co., Ltd. | Plasma processing method |
| JP2002343766A (ja) * | 1999-08-02 | 2002-11-29 | Matsushita Electric Ind Co Ltd | プラズマ処理方法 |
| DE19957169A1 (de) | 1999-11-27 | 2001-06-13 | Bosch Gmbh Robert | Plasmaätzverfahren mit gepulster Substratelektrodenleistung |
| DE10309711A1 (de) | 2001-09-14 | 2004-09-16 | Robert Bosch Gmbh | Verfahren zum Einätzen von Strukturen in einem Ätzkörper mit einem Plasma |
| US6818564B1 (en) | 2001-12-20 | 2004-11-16 | Analog Devices, Inc. | Method for etching a tapered bore in a silicon substrate, and a semiconductor wafer comprising the substrate |
| TWI225668B (en) * | 2002-05-13 | 2004-12-21 | Tokyo Electron Ltd | Substrate processing method |
| US6826451B2 (en) | 2002-07-29 | 2004-11-30 | Asml Holding N.V. | Lithography tool having a vacuum reticle library coupled to a vacuum chamber |
| US20050112891A1 (en) * | 2003-10-21 | 2005-05-26 | David Johnson | Notch-free etching of high aspect SOI structures using a time division multiplex process and RF bias modulation |
| KR100537554B1 (ko) * | 2004-02-23 | 2005-12-16 | 주식회사 하이닉스반도체 | 반도체 소자의 산화막 형성 방법 |
| EP1761947B1 (en) * | 2004-06-29 | 2015-02-25 | Unaxis USA Inc. | Method for reducing aspect ratio dependent etching in time division multiplexed etch processes |
| US7217658B1 (en) * | 2004-09-07 | 2007-05-15 | Novellus Systems, Inc. | Process modulation to prevent structure erosion during gap fill |
| JP2006278827A (ja) * | 2005-03-30 | 2006-10-12 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
| US8231799B2 (en) * | 2006-04-28 | 2012-07-31 | Applied Materials, Inc. | Plasma reactor apparatus with multiple gas injection zones having time-changing separate configurable gas compositions for each zone |
| US7351664B2 (en) * | 2006-05-30 | 2008-04-01 | Lam Research Corporation | Methods for minimizing mask undercuts and notches for plasma processing system |
| US7759237B2 (en) * | 2007-06-28 | 2010-07-20 | Micron Technology, Inc. | Method of forming lutetium and lanthanum dielectric structures |
| GB0823565D0 (en) | 2008-12-24 | 2009-01-28 | Oxford Instr Plasma Technology | Signal generating system |
| GB0903836D0 (en) | 2009-03-05 | 2009-04-22 | Oxford Instr Plasma Technology | Interface module and controller network |
| TW201120942A (en) * | 2009-12-08 | 2011-06-16 | Ind Tech Res Inst | Method for depositing microcrystalline silicon and monitor device of a plasma enhanced deposition |
| US20110207323A1 (en) * | 2010-02-25 | 2011-08-25 | Robert Ditizio | Method of forming and patterning conformal insulation layer in vias and etched structures |
| KR20120000612A (ko) * | 2010-06-28 | 2012-01-04 | 삼성전자주식회사 | 반도체 장치의 제조 방법 |
-
2012
- 2012-02-29 GB GB1203530.9A patent/GB2499816A/en not_active Withdrawn
-
2013
- 2013-02-27 US US14/381,508 patent/US9412566B2/en active Active
- 2013-02-27 EP EP13709983.4A patent/EP2820670B1/en active Active
- 2013-02-27 WO PCT/GB2013/050481 patent/WO2013128181A1/en not_active Ceased
- 2013-02-27 EP EP17172932.0A patent/EP3229265B1/en active Active
- 2013-02-27 KR KR1020147027495A patent/KR102181719B1/ko active Active
- 2013-02-27 TW TW102106858A patent/TWI608533B/zh active
- 2013-02-27 JP JP2014559290A patent/JP6217654B2/ja active Active
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